Absolute Maximum Ratings
Parameter Units
ID @ VGS =0V, TC = 25°C Continuous Drain Current 8.0
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 5.0
IDM Pulsed Drain Current ➀32
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁700 mJ
IAR Avalanche Current ➀8.0 A
EAR Repetitive Avalanche Energy ➀-mJ
dv/dt Peak Diode Recovery dv/dt ➂3.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
PD - 90372A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability .
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
oC
A
REPETITIVE AVALANCHE AND dv/dt RA TED IRF440
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
4/20/01
www.irf.com 1
500V, N-CHANNEL
TO-3
Product Summary
Part Number BVDSS RDS(on) ID
IRF440 500V 0.85Ω 8.0A
Features:
nRepetitive Avalanche Ratings
nDynamic dv/dt Rating
nHermetically Sealed
nSimple Drive Requirements
nEase of Paralleling
For footnotes refer to the last page
IRF440
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction to Case — — 1.0
RthJA Junction to Ambient — — 30 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — 8.0
ISM Pulse Source Current (Body Diode) ➀—— 32
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 8.0A, VGS = 0V ➃
trr Reverse Recovery Time — — 700 nS Tj = 25°C, IF = 8.0A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 8.9 µ C VDD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown V oltage 500 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.85 VGS = 10V, ID = 5.0A➃
Resistance — — 0.98 VGS = 10V, ID =8.0A ➃
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
gfs Forward Transconductance 4.7 — — S ( )V
DS > 15V, IDS = 5.0A ➃
IDSS Zero Gate Voltage Drain Current — — 25 V DS=400V, VGS=0V
— — 250 VDS = 400V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge 27.3 — 68.5 VGS =10V, ID=8.0A
Qgs Gate-to-Source Charge 2.0 — 12.5 nC VDS = 250V
Qgd Gate-to-Drain (‘Miller’) Charge 11 — 42
td(on) Turn-On Delay Time — — 21 VDD =250V, ID =8.0A,
trRise Time — — 73 RG =9.1Ω
td(off) Turn-Off Delay Time — — 72
tfFall Time — — 51
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 1300 VGS = 0V, VDS = 25V
Coss Output Capacitance — 310 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 120 —
nA
Ω
nH
ns
µA
Ω
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
www.irf.com 3
IRF440
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF440
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13 a& b
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IRF440
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
VGS
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF440
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
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IRF440
Foot Notes: ➂ ISD ≤ 8.0, di/dt ≤ 100A/µs,
VDD≤ 500V, TJ ≤ 150°C
Suggested RG =9.1 Ω
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C,
Peak IL = 8.0A, ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-204AA (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/01
