STW88N65M5 N-channel 650 V, 0.024 typ., 84 A, MDmeshTM V Power MOSFET in TO-247 package Datasheet -- production data Features Order code VDSS @Tjmax. RDS(on) max. ID STW88N65M5 710 V < 0.029 84 A Worldwide best RDS(on) in TO-247 Higher VDSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested 2 3 1 TO-247 Applications Figure 1. High efficiency switching applications: - Servers - PV inverters - Telecom infrastructure - Multi kW battery chargers Internal schematic diagram $ Description ' This device is a N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. 3 !-V Device summary Order code Marking Package Packaging STW88N65M5 88N65M5 TO-247 Tube June 2012 This is information on a product in full production. Doc ID 022522 Rev 3 1/13 www.st.com 13 Contents STW88N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 5 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 9 Doc ID 022522 Rev 3 STW88N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage 25 V ID Drain current (continuous) at TC = 25 C 84 A ID Drain current (continuous) at TC = 100 C 50.5 A IDM (1) Drain current (pulsed) 336 A PTOT Total dissipation at TC = 25 C 450 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 15 A EAS Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) 2000 mJ 15 V/ns - 55 to 150 C 150 C Value Unit 0.28 C/W 50 C/W 300 C VGS Parameter dv/dt (2) Peak diode recovery voltage slope Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD 84 A, di/dt = 400 A/s, peak VDS < V(BR)DSS, VDD = 400 V Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Doc ID 022522 Rev 3 3/13 Electrical characteristics 2 STW88N65M5 Electrical characteristics (TC = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source on resistance Symbol Typ. Max. Unit 650 V 1 100 A A 100 nA 4 5 V 0.024 0.029 Min. Typ. Max. Unit VGS = 25 V VGS(th) Table 5. Min. 3 VGS = 10 V, ID = 42 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 8825 223 11 - pF pF pF Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 778 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 202 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.79 - Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 42 A, VGS = 10 V (see Figure 16) - 204 51 84 - nC nC nC Ciss Coss Crss 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/13 Doc ID 022522 Rev 3 STW88N65M5 Electrical characteristics Table 6. Symbol td(V) tr(V) tf(i) tc(off) Table 7. Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 56 A, RG = 4.7 , VGS = 10 V (see Figure 17) (see Figure 20) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 141 16 29 56 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 84 336 A A ISD = 84 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 84 A, di/dt = 100 A/s VDD = 100 V (see Figure 17) - 544 14 50 ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 84 A, di/dt = 100 A/s VDD = 100 V, Tj = 150 C (see Figure 17) - 660 20 60 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Doc ID 022522 Rev 3 5/13 Electrical characteristics STW88N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM10392v1 ID (A) O Li per m at ite io d ni by n m this ax a R rea is Tj=150C Tc=25C Single pulse D S( on ) 100 10 10s 100s 1ms 10ms 1 0.1 0.1 Figure 4. 10 1 VDS(V) 100 Output characteristics AM10393v1 ID (A) VDS=30V 225 VGS=10V 250 AM10394v1 ID (A) 200 8V 175 200 150 125 150 7V 100 100 75 50 50 6V 0 0 Figure 6. 5 10 20 15 25 25 0 VDS(V) 3 Gate charge vs gate-source voltage Figure 7. AM10395v1 VGS (V) VDS (V) VDD=520V ID=42A 14 VDS 4 5 6 7 8 9 VGS(V) Static drain-source on resistance AM10396v1 RDS(on) () VGS=10V 500 0.026 12 400 10 8 300 6 0.024 200 0.022 4 100 2 0 0 6/13 50 100 150 200 0 Qg(nC) 0.020 0 Doc ID 022522 Rev 3 10 20 30 40 50 60 70 80 ID(A) STW88N65M5 Figure 8. Electrical characteristics Capacitance variations Figure 9. AM10397v1 C (pF) Output capacitance stored energy AM10398v1 Eoss (J) 40 100000 35 10000 Ciss 30 25 1000 20 Coss 100 15 10 Crss 10 5 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM04972v1 VGS(th) (norm) 0 0 VDS(V) 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on resistance vs temperature AM05501v2 RDS(on) (norm) ID=250A 2.1 1.10 ID= 42 A 1.9 VGS= 10 V 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(C) Figure 12. Source-drain diode forward characteristics 0 25 50 75 100 125 TJ(C) Figure 13. Normalized VDS vs temperature AM04974v1 VSD (V) 0.5 -50 -25 AM10399v1 VDS (norm) TJ=-50C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25C 0.6 TJ=150C 1.00 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 Doc ID 022522 Rev 3 0 25 50 75 100 TJ(C) 7/13 Electrical characteristics STW88N65M5 Figure 14. Switching losses vs gate resistance (1) AM11171v1 E (J) Eon VDD=400V VGS=10V TJ=25C 3000 ID=56A Eoff 2000 1000 0 0 10 20 30 40 RG() 1. Eon including reverse recovery of a SiC diode 8/13 Doc ID 022522 Rev 3 STW88N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 20. Switching time waveform #ONCEPT WAVEFORM FOR )NDUCTIVE ,OAD 4URN OFF )D VD )D 6DS 4DELAY OFF IDM 6GS 6GS ON ID 6GS)T VDD VDD 6DS )D 6DS 4R ISE AM01472v1 Doc ID 022522 Rev 3 4FALL 4CROSS OVER !-V 9/13 Package mechanical data 4 STW88N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. TO-247 mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/13 Typ. 5.45 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 Doc ID 022522 Rev 3 5.50 5.70 STW88N65M5 Package mechanical data Figure 21. TO-247 drawing 0075325_G Doc ID 022522 Rev 3 11/13 Revision history 5 STW88N65M5 Revision history Table 9. 12/13 Document revision history Date Revision Changes 23-Nov-2011 1 First release. 09-Dec-2011 2 Document status promoted from preliminary data to datasheet. 12-Jun-2012 3 Updated title on the coverpage. Doc ID 022522 Rev 3 STW88N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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