This is information on a product in full production.
June 2012 Doc ID 022522 Rev 3 1/13
13
STW88N65M5
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ V
Power MOSFET in TO-247 package
Datasheet — production data
Features
■Worldwide best RDS(on) in TO-247
■Higher VDSS rating
■Higher dv/dt capability
■Excellent switching performance
■Easy to drive
■100% avalanche tested
Applications
■High efficiency switching applications:
–Servers
–PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Description
This device is a N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram
Order code VDSS
@Tjmax.
RDS(on) max. ID
STW88N65M5 710 V < 0.029 Ω84 A
TO-247
123
!-V
$
'
3
Table 1. Device summary
Order code Marking Package Packaging
STW88N65M5 88N65M5 TO-247 Tube
www.st.com
Contents STW88N65M5
2/13 Doc ID 022522 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW88N65M5 Electrical ratings
Doc ID 022522 Rev 3 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage ±25 V
IDDrain current (continuous) at TC = 25 °C 84 A
IDDrain current (continuous) at TC = 100 °C 50.5 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 336 A
PTOT Total dissipation at TC = 25 °C 450 W
IAR
Max current during repetitive or single pulse avalanche
(pulse width limited by TJMAX)15 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 2000 mJ
dv/dt (2)
2. ISD ≤ 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V
Peak diode recovery voltage slope 15 V/ns
Tstg Storage temperature - 55 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.28 °C/W
Rthj-amb Thermal resistance junction-ambient max 50 °C/W
TlMaximum lead temperature for soldering purpose 300 °C
Electrical characteristics STW88N65M5
4/13 Doc ID 022522 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 650 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 25 V ± 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 42 A 0.024 0.029 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 -
8825
223
11
-
pF
pF
pF
Co(tr)(1)
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS.
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 520 V - 778 - pF
Co(er)(2)
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 520 V - 202 - pF
RG
Intrinsic gate
resistance f = 1 MHz open drain - 1.79 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 42 A,
VGS = 10 V
(see Figure 16)
-
204
51
84
-
nC
nC
nC
STW88N65M5 Electrical characteristics
Doc ID 022522 Rev 3 5/13
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 56 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
(see Figure 20)
-
141
16
29
56
-
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -84
336
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 84 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V (see Figure 17)
-
544
14
50
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 17)
-
660
20
60
ns
µC
A
Electrical characteristics STW88N65M5
6/13 Doc ID 022522 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance
I
D
100
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM10392v1
I
D
50
0010 V
DS
(V)
20
(A)
515 25
100
8V
6V
7V
V
GS
=10V
150
200
250
AM10393v1
I
D
75
50
25
035V
GS
(V)
7
(A)
46
100
125
150
175
V
DS
=30V
89
200
225
AM10394v1
V
GS
6
4
2
0050 Q
g
(nC)
(V)
200
8
100 150
10
V
DD
=520V
I
D
=42A
12
300
200
100
0
400
500
V
DS
V
DS
(V)
14
AM10395v1
R
DS(on)
0.026
0.024
0.022
0.020
020 I
D
(A)
(Ω)
10 30
V
GS
=10V
50
40 60 70 80
AM10396v1
STW88N65M5 Electrical characteristics
Doc ID 022522 Rev 3 7/13
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized VDS vs temperature
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1
10000
100
Ciss
Coss
Crss
100000
AM10397v1
E
oss
15
10
5
0
0100 V
DS
(V)
(µJ)
400
20
200 300
25
30
500 600
35
40
AM10398v1
V
GS(th)
1.00
0.90
0.80
0.70
-50 0T
J
(°C)
(norm)
-25
1.10
75
25 50 100
I
D
=250µA
AM04972v1
R
DS(on)
1.7
1.5
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.7
1.1
1.3
1.9
2.1
125
I
D
= 42 A
V
GS
= 10 V
AM05501v2
V
SD
020 I
SD
(A)
(V)
10 50
3040
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
=-50°C
T
J
=150°C
T
J
=25°C
AM04974v1
V
DS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
I
D
= 1mA
1.08
AM10399v1
Electrical characteristics STW88N65M5
8/13 Doc ID 022522 Rev 3
Figure 14. Switching losses vs gate resistance
(1)
1. Eon including reverse recovery of a SiC diode
E
0020 RG(Ω)
(μJ)
10 30
1000
2000
40
ID=56A
VDD=400V Eon
Eoff
3000
VGS=10V
TJ=25°C
AM11171v1
STW88N65M5 Test circuits
Doc ID 022522 Rev 3 9/13
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
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6GS
6DS
6DS
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4DELAYOFF
4FALL
4R I S E
4CROSSOVER
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6GS)T
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4FALL
4R I S E
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#ONCEPTWAVEFORMFOR)NDUCTIVE,OAD4URNOFF
Package mechanical data STW88N65M5
10/13 Doc ID 022522 Rev 3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 8. TO-247 mechanical data
Dim.
mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
STW88N65M5 Package mechanical data
Doc ID 022522 Rev 3 11/13
Figure 21. TO-247 drawing
0075325_G
Revision history STW88N65M5
12/13 Doc ID 022522 Rev 3
5 Revision history
Table 9. Document revision history
Date Revision Changes
23-Nov-2011 1 First release.
09-Dec-2011 2 Document status promoted from preliminary data to datasheet.
12-Jun-2012 3 Updated title on the coverpage.
STW88N65M5
Doc ID 022522 Rev 3 13/13
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