TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features * * * * * * * Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.10 mm Primary Applications * * Defense & Aerospace Broadband Wireless Product Description Bias conditions: Vd = 28 V, Idq = 500 mA, Vg = -3.6 V Typical The TriQuint TGF2023-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-05 is designed using TriQuint's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-05 typically provides 43.9 dBm of saturated output power with power gain of 17.8 dB at 3 GHz. The maximum power added efficiency is 56% which makes the TGF2023-05 appropriate for high efficiency applications. Lead-free and RoHS compliant . Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D 1 TGF2023-05 Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes 40 V 2/ Vd Drain Voltage Vg Gate Voltage Range -50 to 0 V Vdg Drain-Gate Voltage 80 V Id Drain Current 5A Ig Gate Current 28 mA Pin Input Continuous Wave Power 37 dBm Tch Channel Temperature 200 C 2/ 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Parameter Value Vd Drain Voltage 28 - 32 V Idq Drain Current 500 mA Drain Current under RF Drive 1500 mA Id_Drive Vg Gate Voltage -3.6 V 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D TGF2023-05 Table III RF Characterization Table 1/ Bias: Vd = 28 V, Idq = 500 mA, Vg = -3.6V Typical SYMBOL PARAMETER 3 GHz 6 GHz 10 GHz 14 GHz UNITS 43.9 43.2 43.0 41.6 dBm 56 56 49 39 % Power Tuned: Psat Saturated Output Power PAE Power Added Efficiency Gain Power Gain 17.8 11.9 9.4 6.1 dB Psat Saturated Output Power 42.6 41.5 42.7 41.6 dBm PAE Power Added Efficiency 62 62 51 40 % Gain Power Gain 17.1 12.5 9.7 6.0 dB 3 GHz 6 GHz 10 GHz 14 GHz UNITS Efficiency Tuned: SYMBOL PARAMETER Power Tuned: Rp 2/ Parallel Resistance 79.3 81.9 61.5 49.9 *mm Cp 2/ Parallel Capacitance 0.524 0.348 0.426 0.432 pF/mm 153 171 72.1 53.1 *mm 0.426 0.372 0.414 0.472 pF/mm Efficiency Tuned: Rp 2/ Parallel Resistance Cp 2/ Parallel Capacitance 1/ Values in this table are engineering estimates scaled from measurements on the 1.25 mm GaN/SiC unit cell (see TGF2023-01 datasheet) 2/ Large signal equivalent output network (normalized) (see figure, pg 7) 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D TGF2023-05 Table IV Power Dissipation and Thermal Properties 1/ Parameter Test Conditions Value Notes 2/ Maximum Power Dissipation Tbaseplate = 70 C Pd = 32.2 W Tchannel = 200 C Tm = 1.5E+6 Hrs Thermal Resistance, jc Vd = 28 V Id = 500 mA Pd = 14 W Tbaseplate = 70 C jc = 4.0 (C/W) Tchannel = 126 C Tm = 6.4E+8 Hrs Thermal Resistance, jc Under RF Drive Vd = 28 V Id = 1540 mA Pout = 43.9 dBm Pd = 19.0 W Tbaseplate = 70 C jc = 4.0 (C/W) Tchannel = 146 C Tm = 1.0E+8 Hrs Mounting Temperature 30 Seconds 320 C Storage Temperature -65 to 150 C 1/ Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate 2/ Channel operating temperature will directly affect the device median lifetime. For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D TGF2023-05 Median Lifetime vs Channel Temperature 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D TGF2023-05 Linear Model for 1.25 mm Unit GaN Cell (UGC) Rdg Lg Rg Cdg Rd Ld Gate Drain + Cgs vi Rgs Ri Rds Cds gm vi Ls Rs Unit GaN cell (UGC) Reference Plane Source MODEL PARAMETER Vd=28V Idq=125mA UNITS Rg 0.78 Rs 0.13 Rd 1.28 gm 0.270 S Cgs 1.79 pF Ri 0.26 Cds 0.308 pF Rds 123.6 Cgd 0.064 pF Tau 2.78 pS Ls 0.0058 nH Lg -0.013 nH Ld 0.018 nH Rgs 8900 Rgd 1730000 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D TGF2023-05 Complete 5mm GaN HEMT Linear Model Includes 4 UGC, 5 vias, and 8 bonding pads _load Gate Pads Drain Pads 1 2 3 4 5 .s8p file 7 6 8 Rp, Cp 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D TGF2023-05 Mechanical Drawing Units: millimeters Thickness: 0.100 Die x,y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad #1, #2, #3, #4 Vg 0.154 x 0.115 Bond Pad #5 Vd 0.154 x 1.010 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D TGF2023-05 Assembly Notes Component placement and adhesive attachment assembly notes: * Vacuum pencils and/or vacuum collets are the preferred method of pick up. * Air bridges must be avoided during placement. * The force impact is critical during auto placement. * Organic attachment (i.e. epoxy) can be used in low-power applications. * Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: * Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum. * An alloy station or conveyor furnace with reducing atmosphere should be used. * Do not use any kind of flux. * Coefficient of thermal expansion matching is critical for long-term reliability. * Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: * Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram. * Force, time, and ultrasonics are critical bonding parameters. * Aluminum wire should not be used. * Devices with small pad sizes should be bonded with 0.0007-inch wire. Ordering Information Part ECCN Package Style TGF2023-05 3A001.b.3.b GaN on SiC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Apr 2011 (c) Rev D