SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances * Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current3) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR3),4) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 2.93 Unit A mJ 11 A V DS=0...640 V 50 V/ns static 20 V AC (f >1 Hz) 30 T C=25 C 34 -55 ... 150 M2.5 screws Page 1 50 W C Ncm 2018-02-12 SPA11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Value Parameter Symbol Conditions Unit Continuous diode forward current IS Diode pulse current3) I S,pulse 33 Reverse diode dv /dt 5) dv /dt 4 V/ns Parameter Symbol Conditions Values Unit 11 A T C=25 C min. typ. max. - - 3.7 leaded - - 80 1.6 mm (0.063 in.) from case for 10s - - 260 C 800 - - V - 870 - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA Soldering temperature, T sold wave soldering only allowed at leads K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 A Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=11 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.68 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=800 V, V GS=0 V, T j=25 C - - 20 V DS=800 V, V GS=0 V, T j=150 C - 100 - A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=7.1 A, T j=25 C - 0.39 0.45 V GS=10 V, I D=7.1 A, T j=150 C - 1.05 - f =1 MHz, open drain - 1.2 - Gate resistance Rev. 2.93 RG Page 2 2018-02-12 SPA11N80C3 Parameter Values Symbol Conditions Unit min. typ. max. - 1600 - - 65 - - 50 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related6) V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related7) C o(tr) - 140 - Turn-on delay time t d(on) - 25 - Rise time tr - 15 - Turn-off delay time t d(off) - 72 - Fall time tf - 10 - Gate to source charge Q gs - 8 - Gate to drain charge Q gd - 30 - Gate charge total Qg - 64 85 Gate plateau voltage V plateau - 5.5 - V - 1 1.2 V - 550 - ns - 10 - C - 33 - A V DD=400 V, V GS=0/10 V, I D=11 A, R G=7.5 ? , Tj = 25C ns Gate Charge Characteristics V DD=640 V, I D=11 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=I S=11 A, T j=25 C V R=400 V, I F=I S=11 A, di F/dt =100 A/s 1) J-STD20 and JESD22 2) Limited only by maximum temperature 3) Pulse width t p limited by T j,max 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 5) ISD=ID, di/dt=400A/s, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch 6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.93 Page 3 2018-02-12 SPA11N80C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 C; D =0 parameter: t p 102 40 limited by on-state resistance 30 10 s 1 s 101 I D [A] P tot [W] 100 s 20 1 ms 10 ms 100 DC 10 10-1 0 0 25 50 75 100 125 1 150 10 100 1000 V DS [V] T C [C] 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T j=25 C; t p=10 s parameter: D=t p/T parameter: V GS 101 40 20 V 0.5 10 V I D [A] 0.2 Z thJC [K/W] 100 30 0.1 0.05 10-1 20 6.5 V 0.02 6V 0.01 10 5.5 V single pulse 5V 10-2 10-5 0 10-4 10-3 10-2 10-1 100 101 t p [s] Rev. 2.93 0 5 10 15 20 25 V DS [V] Page 4 2018-02-12 SPA11N80C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 C; t p=10 s R DS(on)=f(I D); T j=150 C parameter: V GS parameter: V GS 1.8 21 10 V 20 V 18 6V 1.6 10 V 15 6.5 V R DS(on) [] 5.5 V I D [A] 12 9 5V 1.4 20 V 6V 1.2 4V 4.5 V 5V 6 4.5 V 1 3 0.8 0 0 5 10 15 20 0 25 5 10 15 20 25 30 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=7.1 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 s parameter: T j 40 1.2 25 C 1 30 I D [A] R DS(on) [] 0.8 0.6 98 % 150 C 20 typ 0.4 10 0.2 0 0 -60 -20 20 60 100 140 180 Rev. 2.93 0 2 4 6 8 10 V GS [V] T j [C] Page 5 2018-02-12 SPA11N80C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=11 A pulsed I F=f(V SD); t p=10 s parameter: V DD parameter: T j 102 10 8 160 V 150C (98%) 25 C 640 V 101 6 150 C I F [A] V GS [V] 25C (98C) 4 100 2 10-1 0 0 10 20 30 40 50 60 0 70 0.5 1 1.5 2 V SD [V] Q gate [nC] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=2.2 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 960 500 920 400 880 E AS [mJ] V BR(DSS) [V] 300 200 840 800 760 100 720 680 0 25 50 75 100 125 150 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.93 -60 Page 6 2018-02-12 SPA11N80C3 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 104 12 Ciss 10 103 E oss [J] C [pF] 8 102 Coss 6 4 101 Crss 2 100 0 0 100 200 300 400 500 600 700 800 V DS [V] Rev. 2.93 0 100 200 300 400 500 600 700 800 V DS [V] Page 7 2018-02-12 SPA11N80C3 Definition of diode switching characteristics Rev. 2.93 Page 8 2018-02-12 SPA11N80C3 Outline PGTO220 FullPAK 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 oP Q Rev. 2.93 Page 9 MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.86 2.42 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 28.70 29.75 12.78 13.75 2.83 3.45 3.00 3.30 3.50 3.15 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 2018-02-12 800VCoolMOSC3PowerTransistor SPA11N80C3 RevisionHistory SPA11N80C3 Revision:2018-02-27,Rev.2.93 Previous Revision Revision Date Subjects (major changes since last revision) 2.92 2014-02-21 Ptot change according to diagramme 1 "power dissipation" 2.93 2018-02-27 Outline PG-TO-220 FullPAK update TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. 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Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.93,2018-02-27