SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101 Silicon Transistors The General Electric 2N3662 and 2N3663 are NPN silicon planar epitaxial transistors designed specifically for high frequency applications. The units are suitable for use as oscillators in UHF television tuners. The units feature a typical circuit power gain of 19 db at 200 MHz. absolute maximum rati ngs: (25C) (unless otherwise specified) Voltages Collector to Base Emitter to Base Collector to Emitter Current Collector (Steady State) * Dissipation Total Power (Free air @ 55C) * Total Power (Free air @ 25C) * Temperature Storage Temp. Soldering Temp. 10 sec. Ye + Yo from case Operating Junction *Derate 2.67 mW/C for ambient above 25C. Veso Veo Voro Ic Pr Pr Tete Ti 55 to +125C 260 260 100 100 2N3662 2N3663 18 30 ~svoilts 3 3 volts 12 12 ~voits 25 25 mA 120 120 mW 200 200 mW C C DIMENSIONS WITHIN JEDEC OUTLINE TO-98 NOTE : Lead diameter is controlled in the zone between 070 and .250 from the seat- ing plane. Between .250 and end of lead a max. of 021 is held. ALL DIMEN. IN INCHES ANO ARE REFERENCE UNLESS TOLERANCED 3 LEADS +002 O17 001 (NOTE 1) .500 SEATING MIN PLANE t electrical characteristics: (25C) (unless otherwise specified) Static Characteristics Collector Cutoff Current (In = 0, Ves = 15V) (Is = 0, Ves = 18V, Ta = 85C) Emitter Cutoff Current (Ic = 0, Ves = 2V) Forward Current Transfer Ratio (Ic = 8 mA, Vcz = 10V) Collector Saturation Voltage (Ic = 10 mA, Ins = 1.0 mA) Breakdown Voltage, Emitter to Base, Collector Open (Iz = 100 wA) Breakdown Voltage, Collector to Emitter Base Open (Icto = 3 mA pulsed, pulse width = 1 wsec., 1% duty cycle) Breakdown Voltage, Collector to Base, emitter open (Ic = 100 4A) 2N3662 2N3663 Dynamic Characteristics Output Capacitance (In = 0, Vez = 10, f = 1 MHz) (In = 0, Ves = 0, f=1 MHz) Input Capacitance (Ic = 0, Vez = 0.5V, f = 1 MHz) Forward Current Transfer Ratio (Ic = 5 mA, Von = 10V, f = 100 MHz) Power Gain (See Fig. 2) (Ic = 6 mA, Ven = 12V, f = 200 MHz) Power Output (See Fig. 1) (Ic = 10 mA, Vou = 12V, f = 500 MHz) Power Output (See Fig. 3) (Ic ~ 10 mA, Vee = 12V, f ~ 940 MHz) Noise Figure (Ic = 1 mA, Ven = 6V, f = 60 MHz) (Rg = 400 2) 2N3662 2N3663 Iczo CBO To hee Verwan BVzpo BVcro BVcso BVcszo Con Cov Cip hre Po Vo N.F. 365 20 12 18 30 0.8 7.0 12 15 Typ. Max. 0.5 5.0 0.5 15 0.6 1.5 3.0 2 10 21 16 19 30 5.5 4 6.5 uA pA volts volts volts volts volts pF pF pF db db mW mV db [_ 2n3662, 3_| TYPICAL COMMON EMITTER y PARAMETERS f=45 MHz {=100 MHz f=200 MHz ~_ eo Yie is f. feo ws a 4 18 Input e ee Fie 5 er Eu Admittance es 2, an 5 5 Sio ee 2 a vs. xe 6 ' 4 Collector Current : 2 0 2 5 0 Ss 20 Tg" COLLECTOR CURRENT - mA 2 3 10 8 20 Ig- COLLECTOR CURRENT - mA 2 5 10 5% 20 Ig- COLLECTOR CURRENT - mA 3 6 Yre Reverse wit Transfer (OV @ I5V Admittance 1O 10 tl vs. 2 5 10 153 20 Ig" COLLECTOR CURRENT -mA 2 5 10 #5 20 Ig- COLLECTOR CURRENT -mA Collector Current 2 5 io =18 20 Ig - COLLECTOR CURRENT -mA Ypg - REVERSE TRANSFER ADMITTANCE -mmho Yrg - REVERSE TRANSFER ADMITTANCE ~mmho Yrg REVERSE TRANSFER ADMITTANCE -mmho 7 z Yfe E130 20 i ws 120 Forward 310 3 70 4 80 FI00 5 4 Transfer 5 eo = a . z 7O 3 30 3% Admittance F 00 : 3 40 * 20 i : 2 vs. es B so E., #20 = 5 Collector Current t Piilit 2 sew 26 Fos 2 ee 1g- COLLECTOR CURRENT - ma Tg~ COLLECTOR CURRENT - mA Ig- COLLECTOR CURRENT - mA Yoe : ze i Output i te utp i. ee Admittance a, i 5 FE vs. 3 4 Bf ww 2 3% #15 1i5v Collector Current 2 8 Lo) ts 20 Ig-COLLECTOR CURRENT - mA 2 5 0 is 20 Ig-COLLECTOR CURRENT - mA 2 3S 0 i 20 Ig- COLLECTOR CURRENT - mA 366 Collector Characteristics T, == 25C I, - COLLECTOR CURRENT - mA ao * wow om nv @ o - i Yie Input Admittance Yie - INPUT ADMITTANCE -mmho ry - 16 Yfe Forward Transfer Admittance + FORWARO TRANSFER ADMITTANCE - mmho Ye 1 ma Vou ~ COLLECTOR VOLTAGE - VOLTS. f - FREQUENCY - MHz 10 TYPICAL COMMON EMITTER y PARAMETERS VERSUS FREQUENCY 2N3662, 2N3663 10 > - 6 Yre - REVERSE TRANSFER ADMITTANCE - mmho 9 a 50 loo 500 =1000 2 40 1oo ft - FREQUENCY- MMz 13 2 W 10 -mmho - OUTPUT ADMITTANCE Se Yoo o-N ees uara 10 $0 100 (- FREQUENCY - MHz 3 100 $00 1000 f - FREQUENCY - MHz TYPICAL ELECTRICAL CHARACTERISTICS Output Capacity vs. Reverse Voltage Bias L6 215 \ t f = MHz t 8 T,#0 1 b z' \ d 3 $13 N . 5 > o Bi =< Pp Z 1 P| 9 3 1 eee oe aw o ny a a 8 to l2 4 16 Vee - VOLTS e@ 20 367 [_ 2n3662, 3 | Yoe Output Admittance Yre Reverse Transfer Admittance Collector Characteristics T, == 100C i Vee - COLLECTOR VOLTAGE - VOLTS [_ ans662, 3 | hee vs. Collector Current byg-FORWARD CURRENT TRANSFER RATIO ol A 40 co too Je - COLLECTOR CURRENT- mA hg, vs. Collector Current, f == 40 MHz Vog- COLLECTOR VOLTAGE - VOLTS CURRENT TRANSFER RATIO Ree - SMALL SIGNAL FORWARD ' 2 3 4 a 6 7 s s 0 wt 2 3 14 13 Ig - COLLECTOR CURRENT~ mA 30 pF NOTE 3 NOTE | Q @ = Wo00pF =-1000pF LINES OR EQUIV.: tena are 2 TYPE 694 TEE 3.9 TURNS #22 AWS. WIRE, 37160.0,, 1/2" LONG. 500 MHz OSCILLATOR TEST CIRCUIT (Po) ure 1 OUTPUT IMPEDANCE 500 NOTES: | COAX PLUMBING CONSISTS F THE FOLLOWING GR AIR | TYPE 874-020 ADU. sus 1 TYPE @74-LA ADJ. LIN 1 TYPE 874-WN3 anoRT: To oc vTVM INSzA 2 sron ee TUT S100 vew 33K view toxa vew O01nF PL = .001pr = + -- tav oc + D4OMM2 OSCILLATOR TEST CIRCUIT Figure 3 son ve Contours of Gain Bandwidth Product, fr vs. Collector Current EXPRESSED IN MHz 1.0 lo Tc - COLLECTOR CURRENT - mA TEST CIRCUITS 368 Vce(sat) vs. Collector Current Ig/tg #10 Veq (SAT) ~ COLLECTOR SATURATION VOLTAGE - VOLTS Ie-COLLECTOR CURRENT- mA hg, vs. Collector Current, f= 100 MHz 2 f = 10OMHz <2 = 25C He = 4 ze z a as g aa $5 @ 23 z 1 3 $ 7 tt 3 15 Ig + COLLECTOR CURRENT - mA L1= 3.5 TURNS #18 TINNED Meg COPPER WIRE 5/18" DIA., 7/18" LONG, TURNS RATIO #4 TO? 12-0 TURNS #16 TINNED COPPER WIRE V0" DIA., 7/8 LONG, TURN RATIO # 370! L354 70.65,nH Jt Le: T IMPEDANCE 43, waopF Abis-159F input TU.T. JIMPEDANCE:80 1. Le. S-i2er F oo ON won TM 1000.1. to ee MEUTRALIZED 200 MHz POWER GAIN AMPLIFIER TEST CIRCUIT (Gee) Figure 2 = c tnase vaw Jaan 240 16 ae $.6 Ta 1483 uh oF pF = TYPICAL GAIN 2608 Vee IOV, Tee Sma Yee Vee Th, EACH WINDING IO TURRS #150-50 LITZ WIRE ON Gz TOROID (2p #115) BIFILAR WOUND T2, PRIMARY IO TURNS #26 ENAMELED, SECONDARY CLOSE COUPLED 2 TURNS #28 ENAMELEO WOUND ON Oy TOROID (SIZE CF) 102, GENERAL CERAMICS 45 MMz LF POWER GAIN Figure 4