HM 65688A MATRA MHS 16 K x 4 Ultimate CMOS SRAM Introduction The HM 65688A is a very low power CMOS static RAM organised as 16384 x 4 bits. It is manufactured using the MHS high performance CMOS technology named super CMOS. current (typical value = 0.1 A) with a fast access time at 35 ns over the full temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. With this process, MHS is the first to bring the solution for applications where fast computing and low consumption are mandatory, such as aerospace electronics, portable instruments or PC's. Extra protection against heavy ions is given by the use of an epitaxial layer on a P substrate. Using an array of six transistors (6T) memory cells, the HM 65688A combines an extremely low standby supply For military/space applications that demand superior levels of performance and reliability the HM 65688A is processed according to the methods of the latest revision of the MIL STD 883 (class B or S) and/or ESA SCC 9000. Features Access time commercial : 35/45 ns (max) military/industrial : 45/55 ns (max) Very low power consumption active : 175.0 mW (typ) standby : 0.5 W (typ) data retention : 0.4 W (typ) Wide temperature range : -55 to + 125C Rev. C (12/12/94) 300 mils width package TTL compatible inputs and outputs Asynchronous Single 5 volt supply Equal cycle and access time Gated inputs : no pull-up/down resistors are required 1 HM 65688A MATRA MHS Interface Block Diagram Pin Configuration Plastic 300 mils, 22 pins, DIL Ceramic 300 mils, 22 pins, DIL Pinout DIL 22 pins (top view) 2 SOIC & SOJ 300 mils, 24 pins Pinout SO 24 pins (top view) LCC, 22 pins. Pinout LCC 22 pins (top view) Rev. C (12/12/94) HM 65688A MATRA MHS Logic Symbol Pin Names A0-A13: Address inputs GND : Ground I/O0-I/O3 : Input/Outputs CS : Chip-Select Vcc : Power W : Write enable CS W DATA- IN DATA- OUT MODE H X Z Z Deselect L H Z Valid Read L L Valid Z Write L = low, H = high, X = H or L, Z = High impedance Electrical Characteristics Absolute Maximum Ratings Supply voltage to GND potential : . . . . . . . . . . . . . . . -0.5 V to +7.0 V Input or Output voltage applied : . . . . (Gnd - 0.3 V) to (Vcc + 0.3 V) Storage temperature : . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C Electrostatic discharge voltage > 2000 V (MIL STD 883C METHOD 3015.2) Operating Range OPERATING VOLTAGE OPERATING TEMPERATURE Military (- 2) VCC 10 % - 55_C to + 125_C Industrial (- 9) VCC 10 % - 40_C to + 85_C Commercial (- 5) VCC 10 % 0_C to + 70_C Recommended DC Operating Conditions PARAMETER DESCRIPTION MINIMUM TYPICAL MAXIMUM UNIT Vcc Supply Voltage 4.5 5.0 5.5 V Gnd Ground 0.0 0.0 0.0 V Input low voltage - 0.3 0.0 0.8 V Input high voltage 2.2 - Vcc + 0.3 V V MINIMUM TYPICAL MAXIMUM UNIT VIL (1) VIH Note : 1. VIL min = -0.3 V or -1.0 V pulse width 50 ns. Capacitance PARAMETER DESCRIPTION Cin (2) Input capacitance - - 5 pF Cout (2) Output capacitance - - 7 pF Note : 2. TA = 25C, f = 1 MHz, Vcc = 5.0 V, these parameters are not 100 % tested. Rev. C (12/12/94) 3 HM 65688A MATRA MHS DC Parameters PARAMETER IIX IOZ (3) (3) DESCRIPTION MINIMUM TYPICAL MAXIMUM UNIT Input leakage current - 1.0 - 1.0 A Output leakage current - 1.0 - 1.0 A VOL (4) Output low voltage - - 0.4 V VOH (4) Output high voltage 2.4 - - V Note : 3. Gnd < Vin < Vcc, Gnd < Vout < Vcc output disabled, CS 2.2 V. 4. Vcc min, IOL = 4.0 mA, IOH = -1.0 mA. Consumption for Commercial Specification (-5) : SYMBOL PARAMETER 6568A B-5 65688A S-5 65688A -5 65688A C-5 UNIT VALUE ICCSB (5) Standby supply current 10 15 10 15 mA max ICCSB1 (6) Standby supply current 1.0 75 1.0 75 A max ICCOP (7) Operating supply current 65 75 65 75 mA max Consumption for Industrial Specification (-9) : SYMBOL PARAMETER 65688A B-9 65688A S-9 65688A -9 65688A C-9 UNIT VALUE ICCSB (5) Standby supply current 15 20 15 20 mA max ICCSB1 (6) Standby supply current 5.0 100.0 5.0 100.0 A max ICCOP (7) Operating supply current 75 100 75 100 mA max 65688A S-2 65688A -2 65688A C-2 UNIT VALUE Consumption for Military Specification (-2) : SYMBOL PARAMETER 65688A B-2 ICCSB (5) Standby supply current 15 20 15 20 mA max ICCSB1 (6) Standby supply current 50.0 500.0 50.0 500.0 A max ICCOP (7) Operating supply current 75 100 75 100 mA max Notes : 5. CS VIH. 6. CS Vcc - 0.3 V, Iout = 0 mA. 7. Vcc max, Iout = 0 mA, f = max, Vin = Gnd/Vcc. Output Load 4 Rev. C (12/12/94) HM 65688A MATRA MHS Data Retention Mode 2. CS must be kept between Vcc - 0.3 V and 70 % of Vcc during the power up and power down transitions. MHS CMOS RAM's are designed with battery backup applications in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules insure data retention : 3. The RAM can begin operation > 35 ns after Vcc reaches the minimum operating voltage (4.5 V). 1. Chip select (CS) must be held high during data retention ; within Vcc to Vcc - 0.2 V. Timing Data Retention Characteristics PARAMETER DESCRIPTION MINIMUM TYPICAL (8) MAXIMUM UNIT VCCDR Vcc for data retention 2.0 - - V TCDR Chip deselected to data retention time 0.0 - - ns TR Operation recovery time TAVAV (9) - - ns ICCDR1(10) Data retention current @2.0 V : HM-65688A B-5 HM-65688A B-9 HM-65688A B-2 HM-65688AS/C-5 HM-65688AS/C-9 HM-65688AS/C-2 - - - - - - 0.1 0.1 0.1 0.1 0.1 0.1 0.5 2.0 20.0 30.0 30.0 200.0 A A A A A A Data retention current @3.0 V : HM-65688A B-5 HM-65688A B-9 HM-65688A B-2 HM-65688AS/C-5 HM-65688AS/C-9 HM-65688AS/C-2 - - - - - - 0.3 0.3 0.3 0.3 0.3 0.3 1.0 3.0 30.0 50.0 50.0 300.0 A A A A A A ICCDR2(10) Notes : 8. TA = 25C. 9. TAVAV = Read cycle time. 10. CS = Vcc, Vin = Gnd/Vcc, this parameter is only tested to Vcc = 2 V. Rev. C (12/12/94) 5 HM 65688A MATRA MHS AC Parameters AC Conditions : Input pulse levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gnd to 3.0 V Input rise : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns Input timing reference levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V Output load : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 TTL gate + 30 pF Write Cycle : Commercial Specification SYMBOL PARAMETER 65688A B-5 65688A S-5 65688A -5 65688A C-5 UNIT VALUE TAVAV Write cycle time 35 35 45 45 ns min TAVWL Address set-up time 0 0 0 0 ns min TAVWH Address valid to end to write 35 35 45 45 ns min TDVWH Data set-up time 22 22 25 25 ns min TELWH CS low to write end 35 35 45 45 ns min TWLQZ Write low to high Z 15 15 15 15 ns max TWLWH Write pulse width 30 30 40 40 ns min TWHAX Address hold to end of write 5 5 5 5 ns min TWHDX Data hold time 3 3 3 3 ns min TWHQX Write high to low Z 0 0 0 0 ns min Write Cycle : Industrial and Military Specification SYMBOL 6 PARAMETER 65688A B-9/2 65688A S-9/2 65688A -9/2 65688A C-9/2 UNIT VALUE TAVAV Write cycle time 45 45 55 55 ns min TAVWL Address set-up time 0 0 0 0 ns min TAVWH Address valid to end to write 45 45 55 55 ns min TDVWH Data set-up time 25 25 25 25 ns min TELWH CS low to write end 45 45 55 55 ns min TWLQZ Write low to high Z 15 15 20 20 ns max TWLWH Write pulse width 40 40 50 50 ns min TWHAX Address hold to end of write 5 5 5 5 ns min TWHDX Data hold time 3 3 3 3 ns min TWHQX Write high to low Z 0 0 0 0 ns min Rev. C (12/12/94) MATRA MHS HM 65688A Write Cycle (note 11) Note : 11. The internal write time of the memory is defined by the overlap of CS LOW and W LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by goins HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write. Rev. C (12/12/94) 7 HM 65688A MATRA MHS Read Cycle : Commercial Specification SYMBOL PARAMETER 65688A B-5 65688A S-5 65688A -5 65688A C-5 UNIT VALUE TAVAV Read cycle time 35 35 45 45 ns min TAVQV Address access time 35 35 45 45 ns max TAVQX Address Valid to low Z 3 3 3 3 ns min TELQV Chip-select access time 35 35 45 45 ns max TELQX CS low to low Z 5 5 5 5 ns min TEHQZ CS high to high Z 35 35 45 45 ns max Read Cycle : Industrial and Military Specification SYMBOL PARAMETER 65688A B-9/2 65688A S-9/2 65688A -9/2 65688A C-9/2 UNIT VALUE TAVAV Read cycle time 45 45 55 55 ns min TAVQV Address access time 45 45 55 55 ns max TAVQX Address Valid to low Z 3 3 3 3 ns min TELQV Chip-select access time 45 45 55 55 ns max TELQX CS low to low Z 5 5 5 5 ns min TEHQZ CS high to high Z 45 45 55 55 ns max Read Cycle nb 1 (notes 12, 13) Read Cycle nb 2 (notes 12, 14) Notes : 12. W is high for read cycle. 13. Device is continuously selected, CS = VIL. 14. Address valid prior to or coincident with CS transition low. 8 Rev. C (12/12/94) HM 65688A MATRA MHS Burn-in Schematics 16 K x 4 VCC = 5 V (-0, + 0.5) R = 1 K per pin FO = 91.6 KHz 20% Fn = 1/2 Fn - 1 S0 & S1 : programmable signals for write/read cycles Ordering Information 0 - Chip form 300 mils 16 K x 4 Ultimate CMOS 1 - Ceramic 22 pins static RAM 3 - Plastic 22 pins - 300 mils 4 - LCC 22 pins rectangular T- SOIC 24 pins 300 mils U - SOJ 24 pins B : high speed/low current 300 mils S : high speed/standard current Blank : standard speed/low current C : standard -2 : -5 : -6 : -9 : /883 Military Commercial 100% 25C Probe Industrial : MIL STD 883 class B or S DB : Dice Military program :R : Tape & Reel option :RD : Tape & Reel/Dry pack option :D : Dry pack option The information contained herein is subject to change without notice. No responsibility is assumed by MATRA MHS SA for using this publication and/or circuits described herein : nor for any possible infringements of patents or other rights of third parties which may result from its use. Rev. C (12/12/94) 9