STM32F479xx ARM(R)Cortex(R)-M4 32b MCU+FPU, 225DMIPS, up to 2MB Flash/384+4KB RAM, USB OTG HS/FS, Ethernet, FMC, dual Quad-SPI, Crypto, Graphical accelerator, Camera IF, LCD-TFT & MIPI DSI Datasheet - production data Features &"'! * Core: ARM(R) 32-bit Cortex(R)-M4 CPU with FPU, Adaptive real-time accelerator (ART AcceleratorTM) allowing 0-wait state execution from Flash memory, frequency up to 180 MHz, MPU, 225 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions * Memories - - - - Up to 2 MB of Flash memory organized into two banks allowing read-while-write Up to 384+4 KB of SRAM including 64 KB of CCM (core coupled memory) data RAM Flexible external memory controller with up to 32-bit data bus: SRAM, PSRAM, SDRAM/LPSDR, SDRAM, Flash NOR/NAND memories Dual-flash mode Quad-SPI interface LQFP100 (14 x 14 mm) UFBGA169 (7 x 7 mm) LQFP144 (20 x 20 mm) WLCSP168 LQFP176 (24 x 24 mm) UFBGA176 (10 x 10 mm) TFBGA216 (13 x 13 mm) LQFP208 (28 x 28 mm) * Debug mode - - * Up to 161 I/O ports with interrupt capability - - - - - Chrom-ART AcceleratorTM (DMA2D), graphical hardware accelerator enabling enhanced graphical user interface with minimum CPU load LCD parallel interface, 8080/6800 modes LCD TFT controller supporting up to XGA resolution MIPI(R) DSI host controller supporting up to 720p 30Hz resolution - - - - - - - - * 1.7 V to 3.6 V application supply and I/Os POR, PDR, PVD and BOR 4-to-26 MHz crystal oscillator Internal 16 MHz factory-trimmed RC (1% accuracy) 32 kHz oscillator for RTC with calibration Internal 32 kHz RC with calibration Low power - - Sleep, Stop and Standby modes VBAT supply for RTC, 20x32 bit backup registers + optional 4 KB backup SRAM * 3x12-bit, 2.4 MSPS ADC: up to 24 channels and 7.2 MSPS in triple interleaved mode * 2x12-bit D/A converters * General-purpose DMA: 16-stream DMA controller with FIFOs and burst support * Up to 17 timers: up to twelve 16-bit and two 32bit timers up to 180 MHz, each with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input. 2x watchdogs and SysTick timer March 2017 This is information on a product in full production. Up to 3 x I2C interfaces (SMBus/PMBus) Up to 4 USARTs and 4 UARTs (11.25 Mbit/s, ISO7816 interface, LIN, IrDA, modem control) Up to 6 SPIs (45 Mbits/s), 2 with muxed fullduplex I2S for audio class accuracy via internal audio PLL or external clock 1 x SAI (serial audio interface) 2 x CAN (2.0B Active) SDIO interface * Advanced connectivity - * Clock, reset and supply management - - - - Up to 157 fast I/Os up to 90 MHz Up to 159 5 V-tolerant I/Os * Up to 21 communication interfaces * Graphics: - SWD & JTAG interfaces Cortex(R)-M4 Trace MacrocellTM - - - USB 2.0 full-speed device/host/OTG controller with on-chip PHY USB 2.0 high-speed/full-speed device/host/OTG controller with dedicated DMA, on-chip fullspeed PHY and ULPI Dedicated USB power rail enabling on-chip PHYs operation throughout the entire MCU power supply range 10/100 Ethernet MAC with dedicated DMA: supports IEEE 1588v2 hardware, MII/RMII * 8- to 14-bit parallel camera interface up to 54 Mbytes/s * Cryptographic accelerator - * * * * HW accelerator for AES 128, 192, 256, Triple DES, HASH (MD5, SHA-1, SHA-2) and HMAC True random number generator CRC calculation unit RTC: subsecond accuracy, hardware calendar 96-bit unique ID Table 1. Device summary Reference STM32F479xx DocID028010 Rev 4 Part numbers STM32F479AI, STM32F479AG, STM32F479BI, STM32F479BG, STM32F479II, STM32F479IG, STM32F479NI, STM32F479NG, STM32479VG, STM32479VI, STM32479ZG, STM32479ZI 1/217 www.st.com Contents STM32F479xx Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1.1 2 1.1.1 LQFP176 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 1.1.2 LQFP208 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 1.1.3 UFBGA176 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.1.4 TFBGA216 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2.1 ARM(R) Cortex(R)-M4 with FPU and embedded Flash and SRAM . . . . . . . 21 2.2 Adaptive real-time memory accelerator (ART AcceleratorTM) . . . . . . . . . 21 2.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.5 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 22 2.6 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.7 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.8 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2.9 Flexible Memory Controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 2.10 Quad-SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 25 2.11 LCD-TFT controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 2.12 DSI Host (DSIHOST) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 2.13 Chrom-ART AcceleratorTM (DMA2D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 2.14 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 27 2.15 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 27 2.16 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2.17 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2.18 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 2.19 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 2.20 2/217 Compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.19.1 Internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 2.19.2 Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 2.20.1 Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 2.20.2 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 DocID028010 Rev 4 STM32F479xx Contents 2.20.3 3 Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 34 2.21 Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . . . 35 2.22 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 2.23 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 2.24 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 2.24.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 37 2.24.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 2.24.3 Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 2.24.4 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 2.24.5 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 2.24.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 2.25 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 2.26 Universal synchronous/asynchronous receiver transmitters (USART) . . 39 2.27 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 2.28 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 2.29 Serial Audio interface (SAI1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 2.30 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 2.31 Audio and LCD PLL(PLLSAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 2.32 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . . . 42 2.33 Ethernet MAC interface with dedicated DMA and IEEE 1588 support . . . 42 2.34 Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 2.35 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 43 2.36 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 43 2.37 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 2.38 Cryptographic accelerator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 2.39 Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 2.40 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 45 2.41 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 2.42 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 2.43 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 2.44 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 46 2.45 Embedded Trace MacrocellTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 DocID028010 Rev 4 3/217 5 Contents STM32F479xx 4 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 5.1 4/217 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 5.3.2 VCAP1/VCAP2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 5.3.3 Operating conditions at power-up / power-down (regulator ON) . . . . . . 95 5.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 95 5.3.5 Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . 95 5.3.6 Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 5.3.7 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 5.3.8 Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . 113 5.3.9 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 114 5.3.10 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 118 5.3.11 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 5.3.12 PLL spread spectrum clock generation (SSCG) characteristics . . . . . 122 5.3.13 MIPI D-PHY characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 5.3.14 MIPI D-PHY PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 5.3.15 MIPI D-PHY regulator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 127 5.3.16 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 5.3.17 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5.3.18 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 131 5.3.19 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5.3.20 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 5.3.21 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 5.3.22 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 5.3.23 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 5.3.24 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 DocID028010 Rev 4 STM32F479xx 6 7 Contents 5.3.25 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 5.3.26 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 5.3.27 Reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 5.3.28 DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 5.3.29 FMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 5.3.30 Quad-SPI interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 184 5.3.31 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 185 5.3.32 LCD-TFT controller (LTDC) characteristics . . . . . . . . . . . . . . . . . . . . . 186 5.3.33 SD/SDIO MMC card host interface (SDIO) characteristics . . . . . . . . . 188 5.3.34 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191 6.1 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191 6.2 LQFP144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194 6.3 WLCSP168 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197 6.4 UFBGA169 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199 6.5 LQFP176 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201 6.6 UFBGA176+25 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 205 6.7 LQFP208 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207 6.8 TFBGA216 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .211 6.9 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 Appendix A Recommendations when using internal reset OFF . . . . . . . . . . . 215 A.1 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216 DocID028010 Rev 4 5/217 5 List of tables STM32F479xx List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Table 32. Table 33. Table 34. Table 35. Table 36. Table 37. Table 38. Table 39. Table 40. Table 41. Table 42. Table 43. 6/217 Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 STM32F479xx features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Voltage regulator configuration mode versus device operating mode . . . . . . . . . . . . . . . . 32 Regulator ON/OFF and internal reset ON/OFF availability. . . . . . . . . . . . . . . . . . . . . . . . . 34 Voltage regulator modes in stop mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 STM32F479xx pin and ball definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 FMC pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 Alternate function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 STM32F479xx register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . 94 VCAP1/VCAP2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . 95 Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 95 Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch) or RAM, regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator disabled), regulator ON . . . . . . . . . . . . . . 100 Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch), regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 Typical and maximum current consumption in Sleep mode, regulator ON. . . . . . . . . . . . 102 Typical and maximum current consumption in Sleep mode, regulator OFF . . . . . . . . . . . 103 Typical and maximum current consumption in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . 104 Typical and maximum current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . 105 Typical and maximum current consumption in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . . 106 Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 HSE 4-26 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 PLLSAI (audio and LCD-TFT PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 DocID028010 Rev 4 STM32F479xx Table 44. Table 45. Table 46. Table 47. Table 48. Table 49. Table 50. Table 51. Table 52. Table 53. Table 54. Table 55. Table 56. Table 57. Table 58. Table 59. Table 60. Table 61. Table 62. Table 63. Table 64. Table 65. Table 66. Table 67. Table 68. Table 69. Table 70. Table 71. Table 72. Table 73. Table 74. Table 75. Table 76. Table 77. Table 78. Table 79. Table 80. Table 81. Table 82. Table 83. Table 84. Table 85. Table 86. Table 87. Table 88. Table 89. Table 90. Table 91. Table 92. Table 93. Table 94. Table 95. List of tables SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 MIPI D-PHY characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 MIPI D-PHY AC characteristics LP mode and HS/LP transitions . . . . . . . . . . . . . . . . . . . 125 DSI-PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 DSI regulator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141 I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147 USB OTG full speed startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149 USB OTG full speed DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149 USB OTG full speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 USB HS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151 Dynamic characteristics: USB ULPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 Dynamics characteristics: Ethernet MAC signals for SMI. . . . . . . . . . . . . . . . . . . . . . . . . 153 Dynamics characteristics: Ethernet MAC signals for RMII . . . . . . . . . . . . . . . . . . . . . . . . 154 Dynamics characteristics: Ethernet MAC signals for MII . . . . . . . . . . . . . . . . . . . . . . . . . 154 ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 ADC static accuracy at fADC = 18 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157 ADC static accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157 ADC static accuracy at fADC = 36 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157 ADC dynamic accuracy at fADC = 18 MHz - limited test conditions . . . . . . . . . . . . . . . . . 158 ADC dynamic accuracy at fADC = 36 MHz - limited test conditions . . . . . . . . . . . . . . . . . 158 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 Asynchronous non-multiplexed SRAM/PSRAM/NOR - read timings . . . . . . . . . . . . . . . . 166 Asynchronous non-multiplexed SRAM/PSRAM/NOR read - NWAIT timings . . . . . . . . . . 166 Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 167 Asynchronous non-multiplexed SRAM/PSRAM/NOR write - NWAIT timings. . . . . . . . . . 168 Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 169 Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 169 Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 170 Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 171 DocID028010 Rev 4 7/217 8 List of tables Table 96. Table 97. Table 98. Table 99. Table 100. Table 101. Table 102. Table 103. Table 104. Table 105. Table 106. Table 107. Table 108. Table 109. Table 110. Table 111. Table 112. Table 113. Table 114. Table 115. Table 116. Table 117. Table 118. Table 119. Table 120. Table 121. Table 122. Table 123. Table 124. Table 125. 8/217 STM32F479xx Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 173 Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 176 Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177 Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 180 SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181 LPSDR SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182 SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183 LPSDR SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183 Quad-SPI characteristics in SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184 Quad-SPI characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 LTDC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 Dynamic characteristics: SD / MMC characteristics, VDD = 2.7 to 3.6 V . . . . . . . . . . . . . 189 Dynamic characteristics: SD / MMC characteristics, VDD = 1.71 to 1.9 V . . . . . . . . . . . . 190 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190 LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192 LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195 WLCSP168 - 168-pin, 4.891 x 5.692 mm, 0.4 mm pitch wafer level chip scale package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198 UFBGA169 - 169-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199 LQFP176, 24 x 24 mm, 176-pin low-profile quad flat package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201 UFBGA176+25, - 201-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 205 UFBGA176+25 recommended PCB design rules (0.65 mm pitch BGA) . . . . . . . . . . . . . 206 LQFP208, 28 x 28 mm, 208-pin low-profile quad flat package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207 TFBGA216 - thin fine pitch ball grid array 13 x 13 x 0.8mm package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211 Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . 215 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216 DocID028010 Rev 4 STM32F479xx List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42. Figure 43. Figure 44. Incompatible board design for LQFP176 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Incompatible board design for LQFP208 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 UFBGA176 port-to-terminal assignment differences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 TFBGA216 port-to-terminal assignment differences. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 STM32F479xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 STM32F479xx Multi-AHB matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 VDDUSB connected to an external independent power supply . . . . . . . . . . . . . . . . . . . . . 29 Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 30 PDR_ON control with internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Startup in regulator OFF: slow VDD slope - power-down reset risen after VCAP_1 , VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . 34 Startup in regulator OFF mode: fast VDD slope - power-down reset risen before VCAP_1 , VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . 34 STM32F47x LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 STM32F47x LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 STM32F47x WLCSP168 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 STM32F47x UFBGA169 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 STM32F47x UFBGA176 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 STM32F47x LQFP176 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 STM32F47x LQFP208 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 STM32F47x TFBGA216 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 Typical VBAT current consumption (RTC ON / backup SRAM ON and LSE in Low drive mode) . . . . . . . . . . . . . . . . . . . . . . 106 Typical VBAT current consumption (RTC ON / backup SRAM ON and LSE in High drive mode) . . . . . . . . . . . . . . . . . . . . . . 107 High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 ACCHSI vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 MIPI D-PHY HS/LP clock lane transition timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . 126 MIPI D-PHY HS/LP data lane transition timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 126 FT I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138 Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144 DocID028010 Rev 4 9/217 11 List of figures Figure 45. Figure 46. Figure 47. Figure 48. Figure 49. Figure 50. Figure 51. Figure 52. Figure 53. Figure 54. Figure 55. Figure 56. Figure 57. Figure 58. Figure 59. Figure 60. Figure 61. Figure 62. Figure 63. Figure 64. Figure 65. Figure 66. Figure 67. Figure 68. Figure 69. Figure 70. Figure 71. Figure 72. Figure 73. Figure 74. Figure 75. Figure 76. Figure 77. Figure 78. Figure 79. Figure 80. Figure 81. Figure 82. Figure 83. Figure 84. Figure 85. Figure 86. Figure 87. Figure 88. Figure 89. Figure 90. Figure 91. Figure 92. 10/217 STM32F479xx I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146 I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146 SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 USB OTG full speed timings: definition of data signal rise and fall time . . . . . . . . . . . . . . 150 ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151 Ethernet SMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 Ethernet RMII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153 Ethernet MII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154 ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 160 Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 160 12-bit buffered/non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 165 Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 167 Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 168 Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 170 Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 176 Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177 NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179 NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 179 NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 180 SDRAM read access waveforms (CL = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181 SDRAM write access waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182 Quad-SPI SDR timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184 Quad-SPI DDR timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 DCMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186 LCD-TFT horizontal timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187 LCD-TFT vertical timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188 SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188 SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189 LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat package outline . . . . . . . . . . . . . . 191 LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193 LQFP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193 LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package outline . . . . . . . . . . . . . . 194 LQFP144 - 144-pin,20 x 20 mm low-profile quad flat package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196 LQFP144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196 WLCSP168 - 168-pin, 4.891 x 5.692 mm, 0.4 mm pitch wafer level chip scale package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197 UFBGA169 - 169-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199 UFBGA169 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 LQFP176, 24 x 24 mm, 176-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 201 LQFP176 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203 LQFP176 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204 UFBGA176+25 - 201-ball, 10 x 10 mm, 0.65 mm pitch, DocID028010 Rev 4 STM32F479xx Figure 93. Figure 94. Figure 95. Figure 96. Figure 97. Figure 98. List of figures ultra fine pitch ball grid array package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205 UFBGA176+25 - 201-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206 LQFP208, 28 x 28 mm, 208-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 207 LQFP208 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209 LQFP208 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210 TFBGA216 - thin fine pitch ball grid array 13 x 13 x 0.8mm, package outline . . . . . . . . . 211 TFBGA216 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212 DocID028010 Rev 4 11/217 11 Description 1 STM32F479xx Description The STM32F479xx devices are based on the high-performance ARM(R) Cortex(R)-M4 32-bit RISC core operating at a frequency of up to 180 MHz. The Cortex(R)-M4 core features a Floating point unit (FPU) single precision which supports all ARM(R) single-precision dataprocessing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU) which enhances application security. The STM32F479xx devices incorporate high-speed embedded memories (Flash memory up to 2 Mbytes, up to 384 Kbytes of SRAM), up to 4 Kbytes of backup SRAM, and an extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB buses and a 32-bit multi-AHB bus matrix. All devices offer three 12-bit ADCs, two DACs, a low-power RTC, twelve general-purpose 16-bit timers including two PWM timers for motor control, two general-purpose 32-bit timers, a true random number generator (RNG), and a cryptographic acceleration cell. They also feature standard and advanced communication interfaces: * Up to three I2Cs * Six SPIs, two I2Ss full duplex. To achieve audio class accuracy, the I2S peripherals can be clocked via a dedicated internal audio PLL or via an external clock to allow synchronization. * Four USARTs plus four UARTs * An USB OTG full-speed and a USB OTG high-speed with full-speed capability (with the ULPI), * Two CANs * One SAI serial audio interface * An SDMMC host interface * Ethernet and camera interface * LCD-TFT display controller * Chrom-ART AcceleratorTM * DSI Host. Advanced peripherals include an SDMMC interface, a flexible memory control (FMC) interface, a Quad-SPI Flash memory, camera interface for CMOS sensors and a cryptographic acceleration cell. Refer to Table 2 for the list of peripherals available on each part number. The STM32F479xx devices operate in the -40 to +105 C temperature range from a 1.7 to 3.6 V power supply. A dedicated supply input for USB (OTG_FS and OTG_HS) only in full speed mode, is available on all packages. The supply voltage can drop to 1.7 V (refer to Section 2.19.2). A comprehensive set of power-saving mode allows the design of low-power applications. The STM32F479xx devices are offered in eight packages, ranging from 100 to 216 pins. The set of included peripherals changes with the device chosen, according to Table 2. 12/217 DocID028010 Rev 4 STM32F479xx Description These features make the STM32F479xx microcontrollers suitable for a wide range of applications: * Motor drive and application control * Medical equipment * Industrial applications: PLC, inverters, circuit breakers * Printers, and scanners * Alarm systems, video intercom, and HVAC * Home audio appliances Figure 5 shows the general block diagram of the device family. Flash memory in Kbytes SRAM in Kbytes System 384(160+32+128+64) Backup 4 Yes Quad-SPI Yes Ethernet No Yes Generalpurpose 10 Advancedcontrol 2 Basic 2 Random number generator 2 SPI / I S Yes (1) 6/2(full duplex)(1) 4/2(full duplex) I2C USART/UART STM32F479Nx 1024 2048 1024 2048 1024 2048 1024 2048 1024 2048 1024 2048 FMC memory controller Timers STM32F479Bx STM32F479Ix STM32F479Ax Peripherals STM32F479Zx STM32F479Vx Table 2. STM32F479xx features and peripheral counts 3 4/3 Communication USB OTG FS interfaces USB OTG HS 4/4 Yes Yes CAN 2 SAI 1 SDIO Yes Camera interface Yes MIPI-DSI Host Yes LCD-TFT Yes DocID028010 Rev 4 13/217 46 Description STM32F479xx Cryptography Yes GPIOs 12-bit ADC Number of channels 71 131 114 14 161 161 20 24 Yes 2 Maximum CPU frequency 180 MHz 1.7 to 3.6V(2) Operating voltage Package 131 3 12-bit DAC Number of channels Operating temperatures STM32F479Nx Yes STM32F479Bx Chrom-ART AcceleratorTM (DMA2D) STM32F479Ix STM32F479Ax STM32F479Zx Peripherals STM32F479Vx Table 2. STM32F479xx features and peripheral counts (continued) Ambient operating temperature: -40 to 85 C / -40 to 105 C Junction temperature: -40 to 105 C / -40 to 125 C LQFP100 LQFP144 UFBGA169 LQFP176 WLCSP168 UFBGA176 LQFP208 TFBGA216 1. The SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode. 2. VDD/VDDA minimum value of 1.7 V is obtained when the internal reset is OFF (refer to Section 2.19.2). 14/217 DocID028010 Rev 4 STM32F479xx 1.1 Description Compatibility throughout the family STM32F479xx devices are not compatible with other STM32F4xx devices. Figure 1 and Figure 2 show incompatible board designs, respectively, for LQFP176 and LQFP208 packages (highlighted pins). The UFBGA176 and TFBGA216 ballouts are compatible with other STM32F4xx devices, only few IO port pins are substituted, as shown in Figure 3 and Figure 4. The LQFP100, LQFP144 and UFBGA169 packages are incompatible with other STM32F4xx devices. DocID028010 Rev 4 15/217 46 Description 1.1.1 STM32F479xx LQFP176 package 3+ 3+ 3+ DocID028010 Rev 4 3+ 3+ 3% 3% 3% 670)[[ /4)3 3% 3, 9'' 966 9&$3 3$ 3$ 3$ 3$ 3$ 3$ 3& 3& 3& 3& 9''86% 966 3* 3* 3* 3* 3* 3* 3* 966'6, '6,+267B'1 '6,+267B'3 9'''6, '6,+267B&.1 '6,+267B&.3 966'6, '6,+267B'1 '6,+267B'3 9&$3'6, 9''6, 3' 3' 9'' 966 3' 3' 3' 3' 3' 3' 3+ 1. Pins from 85 to 133 are not compatible. 16/217 3, 670)[[[[ /4)3 3, 966 3, 3, 966 Figure 1. Incompatible board design for LQFP176 package 3, 3, 3+ 3+ 3+ 9'' 966 9&$3 3$ 3$ 3$ 3$ 3$ 3$ 3& 3& 3& 3& 9'' 966 3* 3* 3* 3* 3* 3* 3* 3' 3' 9'' 966 3' 3' 3' 3' 3' 3' 3% 3% 3% 3% 9'' 966 3+ 069 STM32F479xx 1.1.2 Description LQFP208 package Figure 2. Incompatible board design for LQFP208 package 670)[[[[ /4)3 3& 9''86% 966 3* 3* 3* 3* 3* 3* 3* 966'6, '6,+267B'1 '6,+267B'3 9'''6, '6,+267B&.1 '6,+267B&.3 966'6, '6,+267B'1 '6,+267B'3 9&$3'6, 9'''6, 3' 3' 670)[670)[ /4)3 3& 9'' 966 3* 3* 3* 3* 3* 3* 3* 3. 3. 3. 966 9'' 3- 3- 3- 3- 3- 3- 3' 3' 069 1. Pins from 118 to 128 and pin 137 are not compatible DocID028010 Rev 4 17/217 46 Description 1.1.3 STM32F479xx UFBGA176 package Figure 3. UFBGA176 port-to-terminal assignment differences $ 3( 3( 3( 3( 3% 3% 3* 3* 3% 3% 3' 3& 3$ 3$ 3$ % 3( 3( 3( 3% 3% 3% 3* 3* 3* 3* 3' 3' 3& 3& 3$ & 9%$ 7 3, 3, 3, 9'' 3'5 B21 9'' 9'' 9'' 3* 3' 3' 3, 1& 3$ ' 3& 3, 3, 3, 966 %22 7 966 966 966 3' 3' 3' 9'' '6, 3, 3$ ( 3& 3) 3, 3, '6, +267B '3 '6, +267B '1 3, 3$ ) 3& 966 9'' 3+ 966 966 966 966 966 966 9&$3 3& 3$ * 3+ 966 9'' 3+ 966 966 966 966 966 966 9'' 3& 3& + 3+ 3) 3) 3+ 966 966 966 966 966 966 '6, 9''B 86% 3* 3& - 15 67 3) 3) 3+ 966 966 966 966 966 9'' '6, 9'' 3* 3* . 3) 3) 3) 9'' 966 966 966 966 966 9&$3 '6, 3* 3* 3* '6, +267B &.3 '6, +267B &.1 3' 3* / 3) 3) 3) %<3$66 B5(* 0 966$ 3& 3& 3& 3& 3% 3* 966 966 9&$3 B 3+ '6, +267B '3 '6, +267B '1 3' 3' 1 95() 3$ 3$ 3$ 3& 3) 3* 9'' 9'' 9'' 3( 3+ 3' 3' 3' 3 95() 3$ 3$ 3$ 3& 3) 3) 3( 3( 3( 3( 3% 3% 3' 3' 9''$ 3$ 3$ 3% 3% 3) 3( 3) 3( 3( 3% 3% 3% 3% 5 3) ^dD& ^dD& ^dD& ^dD& 3' 3, 3, 3' 3, 1& 3' 3+ 3, 3' 9'' '6, 3, 3+ 3+ 3, '6, +267B '3 '6, +267B '1 3, 966 9&$3 3& 966 9&$3 3& 966 9'' 3& 966 9'' 3& 966 9'' 3* 966 '6, 9''B 86% 3* 9'' 9'' 3* 9'' '6, 9'' 3* 3+ 3* 3* 9&$3 '6, 3* 3* '6, +267B 3' &.1 '6, +267B 3' '1 3+ 3+ 3' '6, +267B &.3 3+ 3+ 3' '6, +267B '3 069 1. The highlighted pins are substituted with dedicated DSI IO pins on STM32F469xx/479xx devices. 18/217 DocID028010 Rev 4 STM32F479xx 1.1.4 Description TFBGA216 package Figure 4. TFBGA216 port-to-terminal assignment differences $ 3( 3( 3( 3* 3( 3( 3% 3% 3% 3% 3' 3& 3$ 3$ 3$ % 3( 3( 3* 3% 3% 3% 3* 3* 3- 3- 3' 3' 3& 3& 3$ & 9%$7 3, 3, 3. 3. 3. 3* 3* 3- 3' 3' 3' 3, 3, 3$ ' 3& 3) 3, 3, 3, 3, 3. 3. 3* 3- 3' 3' 3+ 3, 3$ ( 3& 3) 3, 3, 3'5 21 %227 9'' 9'' 9'' 9'' 9&$3 3+ 3+ 3, 3$ ) 3& 966 3, 9'' 9'' 966 966 966 966 966 9'' 3& 3$ * 3+ 3) 3, 3, 9'' 966 966 3& 3& + 3+ 3) 3, 3+ 9'' 966 966 3* 3& - 1567 3) 3+ 3+ 9'' 966 966 9'' 3* 3* . 3) 3) 3) 3+ 9'' 966 966 966 966 966 9'' 3' 3% 3' / 3) 3) 3) 3& %<3$66 5(* 966 9'' 9'' 9'' 9'' 9&$3 3' 3% 3' 3' 0 966$ 3& 3& 3& 3% 3) 3* 3) 3- 3' 3' 3* 3* 3- 3+ 1 95() 3$ 3$ 3$ 3& 3) 3* 3- 3( 3' 3* 3* 3+ 3+ 3+ 3 95() 3$ 3$ 3$ 3& 3) 3- 3) 3( 3( 3( 3% 3+ 3+ 3+ 5 9''$ 3$ 3$ 3% 3% 3- 3- 3( 3( 3( 3( 3( 3% 3% 3% ^dD& ^dD& ^dD& ^dD& 9'' 3. 3/ 9'' '6, +267B '3 '6, +267B '1 9'' 3- 3. 9''' 86% 966 '6, 9'' '6, 9'' 3- 3- 9'' '6, '6, +267B &.3 '6, +267B &.1 9'' 3- 3- 9'' '6, +267B '3 '6, +267B '1 9'' 3- 3' 9'' 9&$3 '6, 3' 06Y9 1. The highlighted pins are substituted with dedicated DSI IO pins on STM32F469xx/479xx devices. DocID028010 Rev 4 19/217 46 Description STM32F479xx Figure 5. STM32F479xx block diagram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he timers connected to APB2 are clocked from TIMxCLK up to 180 MHz, while the timers connected to APB1 are clocked from TIMxCLK either up to 90 MHz or 180 MHz depending on TIMPRE bit configuration in the RCC_DCKCFGR register. 20/217 DocID028010 Rev 4 STM32F479xx Functional overview 2 Functional overview 2.1 ARM(R) Cortex(R)-M4 with FPU and embedded Flash and SRAM The ARM(R) Cortex(R)-M4 with FPU processor is the latest generation of ARM processors for embedded systems. It was developed to provide a low-cost platform that meets the needs of MCU implementation, with a reduced pin count and low-power consumption, while delivering outstanding computational performance and an advanced response to interrupts. The ARM(R) Cortex(R)-M4 with FPU core is a 32-bit RISC processor that features exceptional code-efficiency, delivering the high-performance expected from an ARM core in the memory size usually associated with 8- and 16-bit devices. The processor supports a set of DSP instructions which allow efficient signal processing and complex algorithm execution. Its single precision FPU (floating point unit) speeds up software development by using metalanguage development tools, while avoiding saturation. The STM32F47x line is compatible with all ARM tools and software. Figure 5 shows the general block diagram of the STM32F47x line. Note: Cortex(R)-M4 with FPU core is binary compatible with the Cortex(R)-M3 core. 2.2 Adaptive real-time memory accelerator (ART AcceleratorTM) The ART AcceleratorTM is a memory accelerator optimized for STM32 industry-standard ARM(R) Cortex(R)-M4 with FPU processors. It balances the inherent performance advantage of the ARM(R) Cortex(R)-M4 with FPU over Flash memory technologies, which normally require the processor to wait for the Flash memory at higher frequencies. To release the processor full 225 DMIPS performance at this frequency, the accelerator implements an instruction prefetch queue and branch cache, which increases program execution speed from the 128-bit Flash memory. Based on CoreMark(R) benchmark, the performance achieved thanks to the ART Accelerator is equivalent to 0 wait state program execution from Flash memory at a CPU frequency up to 180 MHz. 2.3 Memory protection unit The memory protection unit (MPU) is used to manage the CPU accesses to memory to prevent one task to accidentally corrupt the memory or resources used by any other active task. This memory area is organized into up to 8 protected areas that can in turn be divided up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4 gigabytes of addressable memory. The MPU is especially helpful for applications where some critical or certified code has to be protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime operating system). If a program accesses a memory location that is prohibited by the MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can dynamically update the MPU area setting, based on the process to be executed. The MPU is optional and can be bypassed for applications that do not need it. DocID028010 Rev 4 21/217 46 Functional overview 2.4 STM32F479xx Embedded Flash memory The devices embed a Flash memory of up to 2 Mbytes available for storing programs and data. 2.5 CRC (cyclic redundancy check) calculation unit The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit data word and a fixed generator polynomial. Among other applications, CRC-based techniques are used to verify data transmission or storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of verifying the Flash memory integrity. The CRC calculation unit helps compute a software signature during runtime, to be compared with a reference signature generated at link-time and stored at a given memory location. 2.6 Embedded SRAM All devices embed: * Up to 384Kbytes of system SRAM including 64 Kbytes of CCM (core coupled memory) data RAM RAM memory is accessed (read/write) at CPU clock speed with 0 wait states. * 4 Kbytes of backup SRAM This area is accessible only from the CPU. Its content is protected against possible unwanted write accesses, and is retained in Standby or VBAT mode. 2.7 Multi-AHB bus matrix The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs, Ethernet, USB HS, LCD-TFT, and DMA2D) and the slaves (Flash memory, RAM, FMC, QUADSPI, AHB and APB peripherals) and ensures a seamless and efficient operation even when several high-speed peripherals work simultaneously. 22/217 DocID028010 Rev 4 STM32F479xx Functional overview Figure 6. STM32F479xx Multi-AHB matrix ZZd ZD D >d&d >d&dD h^Kd' ,^ h^,^D d,ZEdD D DW 'W D DDD DDD DW/ 'W D ^ ZD ZD / < DZD K > /K & Z ^ZD < ^ZD < ^ZD < , , &D D W W Y^W/ ^ 2.8 D^s DMA controller (DMA) The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8 streams each. They are able to manage memory-to-memory, peripheral-to-memory and memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals, support burst transfer and are designed to provide the maximum peripheral bandwidth (AHB/APB). The two DMA controllers support circular buffer management, so that no specific code is needed when the controller reaches the end of the buffer. The two DMA controllers also have a double buffering feature, which automates the use and switching of two memory buffers without requiring any special code. Each stream is connected to dedicated hardware DMA requests, with support for software trigger on each stream. Configuration is made by software and transfer sizes between source and destination are independent. DocID028010 Rev 4 23/217 46 Functional overview STM32F479xx The DMA can be used with the main peripherals: 2.9 * SPI and I2S * I2C * USART * General-purpose, basic and advanced-control timers TIMx * DAC * SDIO * Camera interface (DCMI) * ADC * SAI1 * QUADSPI. Flexible Memory Controller (FMC) The Flexible memory controller (FMC) includes three memory controllers: * The NOR/PSRAM memory controller * The NAND/memory controller * The Synchronous DRAM (SDRAM/Mobile LPSDR SDRAM) controller The main features of the FMC controller are the following: * Interface with static-memory mapped devices including: - Static random access memory (SRAM) - NOR Flash memory/OneNAND Flash memory - PSRAM - NAND Flash memory with ECC hardware to check up to 8 Kbytes of data * Interface with synchronous DRAM (SDRAM/Mobile LPSDR SDRAM) memories * 8-,16-,32-bit data bus width * Independent Chip Select control for each memory bank * Independent configuration for each memory bank * Write FIFO * Read FIFO for SDRAM controller * The Maximum FMC_CLK/FMC_SDCLK frequency for synchronous accesses is HCLK/2. LCD parallel interface The FMC can be configured to interface seamlessly with most graphic LCD controllers. It supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost effective graphic applications using LCD modules with embedded controllers or high performance solutions using external controllers with dedicated acceleration. 24/217 DocID028010 Rev 4 STM32F479xx 2.10 Functional overview Quad-SPI memory interface (QUADSPI) All STM32F479xx devices embeds a Quad-SPI memory interface, which is a specialized communication interface targeting Single, Dual, Quad or Dual-flash SPI memories. It can work in direct mode through registers, external flash status register polling mode and memory mapped mode. Up to 256 Mbytes external Flash memory are mapped, supporting 8, 16 and 32-bit access. Code execution is supported. The opcode and the frame format are fully programmable. Communication can be either in Single Data Rate or Dual Data Rate. 2.11 LCD-TFT controller The LCD-TFT display controller provides a 24-bit parallel digital RGB (Red, Green, Blue) and delivers all signals to interface directly to a broad range of LCD and TFT panels up to XGA (1024x768) resolution with the following features: 2.12 * 2 displays layers with dedicated FIFO (64x32-bit) * Color Look-Up table (CLUT) up to 256 colors (256x24-bit) per layer * Up to 8 Input color formats selectable per layer * Flexible blending between two layers using alpha value (per pixel or constant) * Flexible programmable parameters for each layer * Color keying (transparency color) * Up to 4 programmable interrupt events. DSI Host (DSIHOST) The DSI Host is a dedicated peripheral for interfacing with MIPI(R) DSI compliant displays. It includes a dedicated video interface internally connected to the LTDC and a generic APB interface that can be used to transmit information to the display. These interfaces are as follows: * * * LTDC interface: - Used to transmit information in Video Mode, in which the transfers from the host processor to the peripheral take the form of a real-time pixel stream (DPI). - Through a customized for mode, this interface can be used to transmit information in full bandwidth in the Adapted Command Mode (DBI). APB slave interface: - Allows the transmission of generic information in Command mode, and follows a proprietary register interface. - Can operate concurrently with either LTDC interface in either Video Mode or Adapted Command Mode. Video mode pattern generator: - Allows the transmission of horizontal/vertical color bar and D-PHY BER testing pattern without any kind of stimuli. DocID028010 Rev 4 25/217 46 Functional overview STM32F479xx The DSI Host main features: * Compliant with MIPI(R) Alliance standards * * Interface with MIPI(R) D-PHY Supports all commands defined in the MIPI(R) Alliance specification for DCS: - Transmission of all Command mode packets through the APB interface - Transmission of commands in low-power and high-speed during Video Mode * Supports up to two D-PHY data lanes * Bidirectional communication and escape mode support through data lane 0 * Supports non-continuous clock in D-PHY clock lane for additional power saving * Supports Ultra Low-Power mode with PLL disabled * ECC and Checksum capabilities * Support for End of Transmission Packet (EoTp) * Fault recovery schemes * 3D transmission support * Configurable selection of system interfaces: * - AMBA APB for control and optional support for Generic and DCS commands - Video Mode interface through LTDC - Adapted Command Mode interface through LTDC Independently programmable Virtual Channel ID in - Video Mode - Adapted Command Mode - APB Slave Video Mode interfaces features: * LTDC interface color coding mappings into 24-bit interface: - 16-bit RGB, configurations 1, 2, and 3 - 18-bit RGB, configurations 1 and 2 - 24-bit RGB * Programmable polarity of all LTDC interface signals * Extended resolutions beyond the DPI standard maximum resolution of 800x480 pixels: maximum resolution is limited by available DSI physical link bandwidth: - Number of lanes: 2 - Maximum speed per lane: 500Mbps Adapted interface features: 26/217 * Support for sending large amounts of data through the memory_write_start (WMS) and memory_write_continue (WMC) DCS commands * LTDC interface color coding mappings into 24-bit interface: - 16-bit RGB, configurations 1, 2, and 3 - 18-bit RGB, configurations 1 and 2 - 24-bit RGB DocID028010 Rev 4 STM32F479xx Functional overview Video mode pattern generator: 2.13 * Vertical and horizontal color bar generation without LTDC stimuli * BER pattern without LTDC stimuli Chrom-ART AcceleratorTM (DMA2D) The Chrom-Art AcceleratorTM (DMA2D) is a graphic accelerator which offers advanced bit blitting, row data copy and pixel format conversion. It supports the following functions: * Rectangle filling with a fixed color * Rectangle copy * Rectangle copy with pixel format conversion * Rectangle composition with blending and pixel format conversion. Various image format coding are supported, from indirect 4bpp color mode up to 32bpp direct color. It embeds dedicated memory to store color lookup tables. An interrupt can be generated when an operation is complete or at a programmed watermark. All the operations are fully automatized and are running independently from the CPU or the DMAs. 2.14 Nested vectored interrupt controller (NVIC) The devices embed a nested vectored interrupt controller able to manage 16 priority levels, and handle up to 93 maskable interrupt channels plus the 16 interrupt lines of the Cortex(R)M4 with FPU core. * Closely coupled NVIC gives low-latency interrupt processing * Interrupt entry vector table address passed directly to the core * Allows early processing of interrupts * Processing of late arriving, higher-priority interrupts * Support tail chaining * Processor state automatically saved * Interrupt entry restored on interrupt exit with no instruction overhead This hardware block provides flexible interrupt management features with minimum interrupt latency. 2.15 External interrupt/event controller (EXTI) The external interrupt/event controller consists of 23 edge-detector lines used to generate interrupt/event requests. Each line can be independently configured to select the trigger event (rising edge, falling edge, both) and can be masked independently. A pending register maintains the status of the interrupt requests. The EXTI can detect an external line with a pulse width shorter than the Internal APB2 clock period. Up to 159 GPIOs can be connected to the 16 external interrupt lines. DocID028010 Rev 4 27/217 46 Functional overview 2.16 STM32F479xx Clocks and startup On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The 16 MHz internal RC oscillator is factory-trimmed to offer 1% accuracy over the full temperature range. The application can then select as system clock either the RC oscillator or an external 4-26 MHz clock source. This clock can be monitored for failure. If a failure is detected, the system automatically switches back to the internal RC oscillator and a software interrupt is generated (if enabled). This clock source is input to a PLL thus allowing to increase the frequency up to 180 MHz. Similarly, full interrupt management of the PLL clock entry is available when necessary (for example if an indirectly used external oscillator fails). Several prescalers allow the configuration of the two AHB buses, the high-speed APB (APB2) and the low-speed APB (APB1) domains. The maximum frequency of the two AHB buses is 180 MHz while the maximum frequency of the high-speed APB domains is 90 MHz. The maximum allowed frequency of the low-speed APB domain is 45 MHz. The devices embed a dedicated PLL (PLLI2S) and PLLSAI which allows to achieve audio class performance. In this case, the I2S master clock can generate all standard sampling frequencies from 8 kHz to 192 kHz. 2.17 Boot modes At startup, boot pins are used to select one out of three boot options: * Boot from user Flash * Boot from system memory * Boot from embedded SRAM The boot loader is located in system memory. It is used to reprogram the Flash memory through a serial interface. Refer to application note AN2606 for details. 2.18 Note: 28/217 Power supply schemes * VDD = 1.7 to 3.6 V: external power supply for I/Os and the internal regulator (when enabled), provided externally through VDD pins. * VSSA, VDDA = 1.7 to 3.6 V: external analog power supplies for ADC, DAC, Reset blocks, RCs and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively. VDD/VDDA minimum value of 1.7 V is obtained when the internal reset is OFF (refer to Section 2.19.2). Refer to Table 3 to identify the packages supporting this option. * VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and backup registers (through power switch) when VDD is not present. * VDDUSB can be connected either to VDD or an external independent power supply (3.0 to 3.6V) for USB transceivers. For example, when device is powered at 1.8V, an independent power supply 3.3V can be connected to VDDUSB. When the VDDUSB is connected to a separated power supply, it is independent from VDD or VDDA but it must be the last supply to be provided and the first to disappear. DocID028010 Rev 4 STM32F479xx Functional overview The following conditions must be respected: - During power-on phase (VDD < VDD_MIN), VDDUSB should be always lower than VDD - During power-down phase (VDD < VDD_MIN), VDDUSB should be always lower than VDD - VDDUSB rising and falling time rate specifications must be respected. - In operating mode phase, VDDUSB could be lower or higher than VDD: - If USB (USB OTG_HS/OTG_FS) is used, the associated GPIOs powered by VDDUSB are operating between VDDUSB_MIN and VDDUSB_MAX.The VDDUSB supplies both USB transceivers (USB OTG_HS and USB OTG_FS). - If only one USB transceiver is used in the application, the GPIOs associated to the other USB transceiver are still supplied by VDDUSB. - If USB (USB OTG_HS/OTG_FS) is not used, the associated GPIOs powered by VDDUSB are operating between VDD_MIN and VDD_MAX. Figure 7. VDDUSB connected to an external independent power supply 9''86%B0$; 86% IXQFWLRQDODUHD 9''86% 9''86%B0,1 86%QRQ IXQFWLRQDO DUHD 9'' 9''$ 86% QRQ IXQFWLRQDO DUHD 9''B0,1 2SHUDWLQJPRGH 3RZHURQ WLPH 3RZHUGRZQ 069 The DSI (Display Serial Interface) sub-system uses several power supply pins which are independent from the other supply pins: * VDDDSI is an independent DSI power supply dedicated for DSI Regulator and MIPI DPHY. This supply must be connected to global VDD. * VCAPDSI pin is the output of DSI Regulator (1.2V) which must be connected externally to VDD12DSI. * VDD12DSI pin is used to supply the MIPI D-PHY, and to supply clock and data lanes pins. An external capacitor of 2.2 uF must be connected on VDD12DSI pin. * VSSDSI pin is an isolated supply ground used for DSI sub-system. * If DSI functionality is not used at all, then: - VDDDSI pin must be connected to global VDD. - VCAPDSI pin must be connected externally to VDD12DSI but the external capacitor is no more needed. - VSSDSI pin must be grounded. DocID028010 Rev 4 29/217 46 Functional overview STM32F479xx 2.19 Power supply supervisor 2.19.1 Internal reset ON On packages embedding the PDR_ON pin, the power supply supervisor is enabled by holding PDR_ON high. On the other package, the power supply supervisor is always enabled. The device has an integrated power-on reset (POR)/ power-down reset (PDR) circuitry coupled with a Brownout reset (BOR) circuitry. At power-on, POR/PDR is always active and ensures proper operation starting from 1.8 V. After the 1.8 V POR threshold level is reached, the option byte loading process starts, either to confirm or modify default BOR thresholds, or to disable BOR permanently. Three BOR thresholds are available through option bytes. The device remains in reset mode when VDD is below a specified threshold, VPOR/PDR or VBOR, without the need for an external reset circuit. The device also features an embedded programmable voltage detector (PVD) that monitors the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is higher than the VPVD threshold. The interrupt service routine can then generate a warning message and/or put the MCU into a safe state. The PVD is enabled by software. 2.19.2 Internal reset OFF This feature is available only on packages featuring the PDR_ON pin. The internal power-on reset (POR) / power-down reset (PDR) circuitry is disabled through the PDR_ON pin. An external power supply supervisor should monitor VDD and NRST and should maintain the device in reset mode as long as VDD is below a specified threshold. PDR_ON must be connected to VSS, as shown in Figure 8. Figure 8. Power supply supervisor interconnection with internal reset OFF 9'' 670)[[ $SSOLFDWLRQUHVHW VLJQDO RSWLRQDO 9%$7 3'5B21 966 3'5QRWDFWLYH99''9 06Y9 The VDD specified threshold, below which the device must be maintained under reset, is 1.7 V (see Figure 9). A comprehensive set of power-saving mode allows to design low-power applications. 30/217 DocID028010 Rev 4 STM32F479xx Functional overview When the internal reset is OFF, the following integrated features are no more supported: * The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled * The brownout reset (BOR) circuitry must be disabled * The embedded programmable voltage detector (PVD) is disabled * VBAT functionality is no more available and VBAT pin should be connected to VDD. All packages allow to disable the internal reset through the PDR_ON signal when connected to VSS. Figure 9. PDR_ON control with internal reset OFF 9 '' 3'5 9 WLPH 5HVHWE\RWKHUVRXUFHWKDQ SRZHUVXSSO\VXSHUYLVRU 1567 3'5B21 3'5B21 WLPH 069 1. PDR_ON signal to be kept always low. 2.20 Voltage regulator The regulator has four operating modes: * * 2.20.1 Regulator ON - Main regulator mode (MR) - Low power regulator (LPR) - Power-down Regulator OFF Regulator ON On packages embedding the BYPASS_REG pin, the regulator is enabled by holding BYPASS_REG low. On all other packages, the regulator is always enabled. DocID028010 Rev 4 31/217 46 Functional overview STM32F479xx There are three power modes configured by software when the regulator is ON: * MR mode used in Run/sleep modes or in Stop modes - In Run/Sleep mode The MR mode is used either in the normal mode (default mode) or the over-drive mode (enabled by software). Different voltages scaling are provided to reach the best compromise between maximum frequency and dynamic power consumption. The over-drive mode allows operating at a higher frequency than the normal mode for a given voltage scaling. - In Stop modes The MR can be configured in two ways during stop mode: MR operates in normal mode (default mode of MR in stop mode) MR operates in under-drive mode (reduced leakage mode). * LPR is used in the Stop modes: The LP regulator mode is configured by software when entering Stop mode. Like the MR mode, the LPR can be configured in two ways during stop mode: * - LPR operates in normal mode (default mode when LPR is ON) - LPR operates in under-drive mode (reduced leakage mode). Power-down is used in Standby mode. The Power-down mode is activated only when entering in Standby mode. The regulator output is in high impedance and the kernel circuitry is powered down, inducing zero consumption. The contents of the registers and SRAM are lost. Refer to Table 3 for a summary of voltage regulator modes versus device operating modes. Two external ceramic capacitors should be connected on VCAP_1 and VCAP_2 pin. Refer to Section 2.18 and Table 124. All packages have the regulator ON feature. Table 3. Voltage regulator configuration mode versus device operating mode(1) Voltage regulator configuration Run mode Sleep mode Stop mode Standby mode Normal mode MR MR MR or LPR - Over-drive mode(2) MR MR - - Under-drive mode - - MR or LPR - Power-down mode - - - Yes 1. `-' means that the corresponding configuration is not available. 2. The over-drive mode is not available when VDD = 1.7 to 2.1 V. 2.20.2 Regulator OFF This feature is available only on packages featuring the BYPASS_REG pin. The regulator is disabled by holding BYPASS_REG high. The regulator OFF mode allows to supply externally a V12 voltage source through VCAP_1 and VCAP_2 pins. 32/217 DocID028010 Rev 4 STM32F479xx Functional overview Since the internal voltage scaling is not managed internally, the external voltage value must be aligned with the targeted maximum frequency. Refer to Operating conditions.The two 2.2 F ceramic capacitors should be replaced by two 100 nF decoupling capacitors. Refer to Section 2.18. When the regulator is OFF, there is no more internal monitoring on V12. An external power supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin should be used for this purpose, and act as power-on reset on V12 power domain. In regulator OFF mode, the following features are no more supported: * PA0 cannot be used as a GPIO pin since it allows to reset a part of the V12 logic power domain which is not reset by the NRST pin. * As long as PA0 is kept low, the debug mode cannot be used under power-on reset. As a consequence, PA0 and NRST pins must be managed separately if the debug connection under reset or pre-reset is required. * The over-drive and under-drive modes are not available. * The Standby mode is not available. Figure 10. Regulator OFF 9 ([WHUQDO9&$3BSRZHU $SSOLFDWLRQUHVHW VXSSO\VXSHUYLVRU ([WUHVHWFRQWUROOHUDFWLYH VLJQDO RSWLRQDO ZKHQ9&$3B0LQ9 9'' 3$ 9'' 1567 %<3$66B5(* 9 9&$3B 9&$3B DL9 The following conditions must be respected: Note: * VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection between power domains. * If the time for VCAP_1 and VCAP_2 to reach V12 minimum value is faster than the time for VDD to reach 1.7 V, then PA0 should be kept low to cover both conditions: until VCAP_1 and VCAP_2 reach V12 minimum value and until VDD reaches 1.7 V (see Figure 11). * Otherwise, if the time for VCAP_1 and VCAP_2 to reach V12 minimum value is slower than the time for VDD to reach 1.7 V, then PA0 could be asserted low externally (see Figure 12). * If VCAP_1 and VCAP_2 go below V12 minimum value and VDD is higher than 1.7 V, then a reset must be asserted on PA0 pin. The minimum value of V12 depends on the maximum frequency targeted in the application (see Operating conditions). DocID028010 Rev 4 33/217 46 Functional overview STM32F479xx Figure 11. Startup in regulator OFF: slow VDD slope - power-down reset risen after VCAP_1 , VCAP_2 stabilization 9'' 3'5 RU9 9 0LQ9 9&$3B9&$3B WLPH 1567 3$ WLPH DLJ 1. This figure is valid whatever the internal reset mode (ON or OFF). Figure 12. Startup in regulator OFF mode: fast VDD slope - power-down reset risen before VCAP_1 , VCAP_2 stabilization 9'' 3'5 RU9 9&$3B9&$3B 9 0LQ9 1567 WLPH 3$ WLPH DLI 1. This figure is valid whatever the internal reset mode (ON or OFF). 2.20.3 Regulator ON/OFF and internal reset ON/OFF availability Table 4. Regulator ON/OFF and internal reset ON/OFF availability 34/217 Package Regulator ON Regulator OFF WLCSP168 UFBGA169 LQFP208 Yes No LQFP176 UFBGA176 TFBGA216 Yes BYPASS_REG set to VSS Yes BYPASS_REG set to VDD DocID028010 Rev 4 Internal reset ON Internal reset OFF Yes Yes PDR_ON set to VDD PDR_ON set to VSS STM32F479xx 2.21 Functional overview Real-time clock (RTC), backup SRAM and backup registers The backup domain includes: * The real-time clock (RTC) * 4 Kbytes of backup SRAM * 20 backup registers The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain the second, minute, hour (in 12/24 hour), week day, date, month, year, in BCD (binarycoded decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are performed automatically. The RTC provides a programmable alarm and programmable periodic interrupts with wakeup from Stop and Standby modes. The sub-seconds value is also available in binary format. It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal low-power RC oscillator or the high-speed external clock divided by 128. The internal low-speed RC has a typical frequency of 32 kHz. The RTC can be calibrated using an external 512 Hz output to compensate for any natural quartz deviation. Two alarm registers are used to generate an alarm at a specific time and calendar fields can be independently masked for alarm comparison. To generate a periodic interrupt, a 16-bit programmable binary auto-reload downcounter with programmable resolution is available and allows automatic wakeup and periodic alarms from every 120 s to every 36 hours. A 20-bit prescaler is used for the time base clock. It is by default configured to generate a time base of 1 second from a clock at 32.768 kHz. The 4-Kbyte backup SRAM is an EEPROM-like memory area. It can be used to store data which need to be retained in VBAT and standby mode. This memory area is disabled by default to minimize power consumption (see Section 2.22). It can be enabled by software. The backup registers are 32-bit registers used to store 80 bytes of user application data when VDD power is not present. Backup registers are not reset by a system, a power reset, or when the device wakes up from the Standby mode (see Section 2.22). Additional 32-bit registers contain the programmable alarm subseconds, seconds, minutes, hours, day, and date. Like backup SRAM, the RTC and backup registers are supplied through a switch that is powered either from the VDD supply when present or from the VBAT pin. DocID028010 Rev 4 35/217 46 Functional overview 2.22 STM32F479xx Low-power modes The devices support three low-power modes to achieve the best compromise between low power consumption, short startup time and available wakeup sources: * Sleep mode In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can wake up the CPU when an interrupt/event occurs. * Stop mode The Stop mode achieves the lowest power consumption while retaining the contents of SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC and the HSE crystal oscillators are disabled. The voltage regulator can be put either in main regulator mode (MR) or in low-power mode (LPR). Both modes can be configured as follows (see Table 5): - Normal mode (default mode when MR or LPR is enabled) - Under-drive mode. The device can be woken up from the Stop mode by any of the EXTI line (the EXTI line source can be one of the 16 external lines, the PVD output, the RTC alarm / wakeup / tamper / time stamp events, the USB OTG FS/HS wakeup or the Ethernet wakeup). Table 5. Voltage regulator modes in stop mode * Voltage regulator configuration Main regulator (MR) Low-power regulator (LPR) Normal mode MR ON LPR ON Under-drive mode MR in under-drive mode LPR in under-drive mode Standby mode The Standby mode is used to achieve the lowest power consumption. The internal voltage regulator is switched off so that the entire 1.2 V domain is powered off. The PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering Standby mode, the SRAM and register contents are lost except for registers in the backup domain and the backup SRAM when selected. The device exits the Standby mode when an external reset (NRST pin), an IWDG reset, a rising edge on the WKUP pin, or an RTC alarm / wakeup / tamper /time stamp event occurs. The standby mode is not supported when the embedded voltage regulator is bypassed and the 1.2 V domain is controlled by an external power. 2.23 VBAT operation The VBAT pin allows to power the device VBAT domain from an external battery, an external supercapacitor, or from VDD when no external battery and an external supercapacitor are present. VBAT operation is activated when VDD is not present. The VBAT pin supplies the RTC, the backup registers and the backup SRAM. 36/217 DocID028010 Rev 4 STM32F479xx Note: Functional overview When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events do not exit it from VBAT operation. When PDR_ON pin is connected to VSS (Internal Reset OFF), the VBAT functionality is no more available and VBAT pin should be connected to VDD. 2.24 Timers and watchdogs The devices include two advanced-control timers, eight general-purpose timers, two basic timers and two watchdog timers. All timer counters can be frozen in debug mode. Table 6 compares the features of the advanced-control, general-purpose and basic timers. Table 6. Timer feature comparison Timer type Advanced control General purpose Basic Counter Counter Prescaler Timer resolution type factor Max Max DMA Capture/ Complementary interface timer request compare output clock clock generation channels (MHz) (MHz)(1) TIM1, TIM8 16-bit Any integer Up, between 1 Down, Up/down and 65536 Yes 4 Yes 90 180 TIM2, TIM5 32-bit Any integer Up, between 1 Down, Up/down and 65536 Yes 4 No 45 90/180 TIM3, TIM4 16-bit Any integer Up, between 1 Down, Up/down and 65536 Yes 4 No 45 90/180 TIM9 16-bit Up Any integer between 1 and 65536 No 2 No 90 180 TIM10 , TIM11 16-bit Up Any integer between 1 and 65536 No 1 No 90 180 TIM12 16-bit Up Any integer between 1 and 65536 No 2 No 45 90/180 TIM13 , TIM14 16-bit Up Any integer between 1 and 65536 No 1 No 45 90/180 TIM6, TIM7 16-bit Up Any integer between 1 and 65536 Yes 0 No 45 90/180 1. The maximum timer clock is either 90 or 180 MHz depending on TIMPRE bit configuration in the RCC_DCKCFGR register. 2.24.1 Advanced-control timers (TIM1, TIM8) The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators multiplexed on 6 channels. They have complementary PWM outputs with programmable DocID028010 Rev 4 37/217 46 Functional overview STM32F479xx inserted dead times. They can also be considered as complete general-purpose timers. Their 4 independent channels can be used for: * Input capture * Output compare * PWM generation (edge- or center-aligned modes) * One-pulse mode output If configured as standard 16-bit timers, they have the same features as the general-purpose TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0100%). The advanced-control timer can work together with the TIMx timers via the Timer Link feature for synchronization or event chaining. TIM1 and TIM8 support independent DMA request generation. 2.24.2 General-purpose timers (TIMx) There are ten synchronizable general-purpose timers embedded in the STM32F47x devices (see Table 6 for differences). * TIM2, TIM3, TIM4, TIM5 The STM32F47x include 4 full-featured general-purpose timers: TIM2, TIM5, TIM3, and TIM4.The TIM2 and TIM5 timers are based on a 32-bit auto-reload up/down counter and a 16-bit prescaler. The TIM3 and TIM4 timers are based on a 16-bit autoreload up/down counter and a 16-bit prescaler. They all feature 4 independent channels for input capture/output compare, PWM or one-pulse mode output. This gives up to 16 input capture/output compare/PWMs on the largest packages. The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the other general-purpose timers and the advanced-control timers TIM1 and TIM8 via the Timer Link feature for synchronization or event chaining. Any of these general-purpose timers can be used to generate PWM outputs. TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They are capable of handling quadrature (incremental) encoder signals and the digital outputs from 1 to 4 hall-effect sensors. * TIM9, TIM10, TIM11, TIM12, TIM13, and TIM14 These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler. TIM10, TIM11, TIM13, and TIM14 feature one independent channel, whereas TIM9 and TIM12 have two independent channels for input capture/output compare, PWM or one-pulse mode output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5 full-featured general-purpose timers. They can also be used as simple time bases. 2.24.3 Basic timers TIM6 and TIM7 These timers are mainly used for DAC trigger and waveform generation. They can also be used as a generic 16-bit time base. TIM6 and TIM7 support independent DMA request generation. 2.24.4 Independent watchdog The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is clocked from an independent 32 kHz internal RC and as it operates independently from the 38/217 DocID028010 Rev 4 STM32F479xx Functional overview main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog to reset the device when a problem occurs, or as a free-running timer for application timeout management. It is hardware- or software-configurable through the option bytes. 2.24.5 Window watchdog The window watchdog is based on a 7-bit downcounter that can be set as free-running. It can be used as a watchdog to reset the device when a problem occurs. It is clocked from the main clock. It has an early warning interrupt capability and the counter can be frozen in debug mode. 2.24.6 SysTick timer This timer is dedicated to real-time operating systems, but could also be used as a standard downcounter. It features: 2.25 * A 24-bit downcounter * Autoreload capability * Maskable system interrupt generation when the counter reaches 0 * Programmable clock source. Inter-integrated circuit interface (I2C) Up to three IC bus interfaces can operate in multimaster and slave modes. They can support the standard (up to 100 KHz), and fast (up to 400 KHz) modes. They support the 7/10-bit addressing mode and the 7-bit dual addressing mode (as slave). A hardware CRC generation/verification is embedded. They can be served by DMA and they support SMBus 2.0/PMBus. The devices also include programmable analog and digital noise filters (see Table 7). Table 7. Comparison of I2C analog and digital filters Filter Analog Digital Pulse width of suppressed spikes 50 ns Programmable length from 1 to 15 I2C peripheral clocks 2.26 Universal synchronous/asynchronous receiver transmitters (USART) The devices embed four universal synchronous/asynchronous receiver transmitters (USART1, USART2, USART3 and USART6) and four universal asynchronous receiver transmitters (UART4, UART5, UART7, and UART8). These six interfaces provide asynchronous communication, IrDA SIR ENDEC support, multiprocessor communication mode, single-wire half-duplex communication mode and have LIN Master/Slave capability. The USART1 and USART6 interfaces are able to communicate at speeds of up to 11.25 Mbit/s. The other available interfaces communicate at up to 5.62 bit/s. DocID028010 Rev 4 39/217 46 Functional overview STM32F479xx USART1, USART2, USART3 and USART6 also provide hardware management of the CTS and RTS signals, Smart Card mode (ISO 7816 compliant) and SPI-like communication capability. All interfaces can be served by the DMA controller. Table 8. USART feature comparison(1) Max. baud rate in Mbit/s Name Standard Modem SPI Smartcard LIN irDA features (RTS/CTS) master (ISO 7816) APB Oversampling Oversampling mapping by 16 by 8 USART1 X X X X X X 5.62 11.25 APB2 (max. 90 MHz) USART2 X X X X X X 2.81 5.62 APB1 (max. 45 MHz) USART3 X X X X X X 2.81 5.62 APB1 (max. 45 MHz) UART4 X - X - X - 2.81 5.62 APB1 (max. 45 MHz) UART5 X - X - X - 2.81 5.62 APB1 (max. 45 MHz) USART6 X X X X X X 5.62 11.25 APB2 (max. 90 MHz) UART7 X - X - X - 2.81 5.62 APB1 (max. 45 MHz) UART8 X - X - X - 2.81 5.62 APB1 (max. 45 MHz) 1. X = feature supported. 2.27 Serial peripheral interface (SPI) The devices feature up to six SPIs in slave and master modes in full-duplex and simplex communication modes. SPI1, SPI4, SPI5, and SPI6 can communicate at up to 45 Mbits/s, SPI2 and SPI3 can communicate at up to 22.5 Mbit/s. The 3-bit prescaler gives 8 master mode frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC generation/verification supports basic SD Card/MMC modes. All SPIs can be served by the DMA controller. The SPI interface can be configured to operate in TI mode for communications in master mode and slave mode. 40/217 DocID028010 Rev 4 STM32F479xx 2.28 Functional overview Inter-integrated sound (I2S) Two standard I2S interfaces (multiplexed with SPI2 and SPI3) are available. They can be operated in master or slave mode, in full duplex and simplex communication modes, and can be configured to operate with a 16-/32-bit resolution as an input or output channel. Audio sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of the I2S interfaces is/are configured in master mode, the master clock can be output to the external DAC/CODEC at 256 times the sampling frequency. All I2Sx can be served by the DMA controller. Note: For I2S2 full-duplex mode, I2S2_CK and I2S2_WS signals can be used only on GPIO Port B and GPIO Port D. 2.29 Serial Audio interface (SAI1) The serial audio interface (SAI1) is based on two independent audio sub-blocks which can operate as transmitter or receiver with their FIFO. Many audio protocols are supported by each block: I2S standards, LSB or MSB-justified, PCM/DSP, TDM, AC'97 and SPDIF output, supporting audio sampling frequencies from 8 kHz up to 192 kHz. Both sub-blocks can be configured in master or in slave mode. In master mode, the master clock can be output to the external DAC/CODEC at 256 times of the sampling frequency. The two sub-blocks can be configured in synchronous mode when full-duplex mode is required. SAI1 can be served by the DMA controller. 2.30 Audio PLL (PLLI2S) The devices feature an additional dedicated PLL for audio I2S and SAI applications. It allows to achieve error-free I2S sampling clock accuracy without compromising on the CPU performance, while using USB peripherals. The PLLI2S configuration can be modified to manage an I2S/SAI sample rate change without disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces. The audio PLL can be programmed with very low error to obtain sampling rates ranging from 8 KHz to 192 KHz. In addition to the audio PLL, a master clock input pin can be used to synchronize the I2S/SAI flow with an external PLL (or Codec output). 2.31 Audio and LCD PLL(PLLSAI) An additional PLL dedicated to audio and LCD-TFT is used for SAI1 peripheral in case the PLLI2S is programmed to achieve another audio sampling frequency (49.152 MHz or 11.2896 MHz) and the audio application requires both sampling frequencies simultaneously. The PLLSAI is also used to generate the LCD-TFT clock. DocID028010 Rev 4 41/217 46 Functional overview 2.32 STM32F479xx Secure digital input/output interface (SDIO) An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit. The interface allows data transfer at up to 48 MHz, and is compliant with the SD Memory Card Specification Version 2.0. The SDIO Card Specification Version 2.0 is also supported with two different databus modes: 1-bit (default) and 4-bit. The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack of MMC4.1 or previous. In addition to SD/SDIO/MMC, this interface is fully compliant with the CE-ATA digital protocol Rev1.1. 2.33 Ethernet MAC interface with dedicated DMA and IEEE 1588 support The devices provide an IEEE-802.3-2002-compliant media access controller (MAC) for ethernet LAN communications through an industry-standard medium-independent interface (MII) or a reduced medium-independent interface (RMII). The microcontroller requires an external physical interface device (PHY) to connect to the physical LAN bus (twisted-pair, fiber, etc.). The PHY is connected to the device MII port using 17 signals for MII or 9 signals for RMII, and can be clocked using the 25 MHz (MII) from the microcontroller. The devices include the following features: 2.34 * Supports 10 and 100 Mbit/s rates * Dedicated DMA controller allowing high-speed transfers between the dedicated SRAM and the descriptors (see the STM32F4xx reference manual for details) * Tagged MAC frame support (VLAN support) * Half-duplex (CSMA/CD) and full-duplex operation * MAC control sublayer (control frames) support * 32-bit CRC generation and removal * Several address filtering modes for physical and multicast address (multicast and group addresses) * 32-bit status code for each transmitted or received frame * Internal FIFOs to buffer transmit and receive frames. The transmit FIFO and the receive FIFO are both 2 Kbytes. * Supports hardware PTP (precision time protocol) in accordance with IEEE 1588 2008 (PTP V2) with the time stamp comparator connected to the TIM2 input * Triggers interrupt when system time becomes greater than target time Controller area network (bxCAN) The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1 Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive 42/217 DocID028010 Rev 4 STM32F479xx Functional overview FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one CAN is used). 256 bytes of SRAM are allocated for each CAN. 2.35 Universal serial bus on-the-go full-speed (OTG_FS) The device embeds an USB OTG full-speed device/host/OTG peripheral with integrated transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and with the OTG 2.0 specification. It has software-configurable endpoint setting and supports suspend/resume. The USB OTG controller requires a dedicated 48 MHz clock that is generated by a PLL connected to the HSE oscillator. The major features are: * Combined Rx and Tx FIFO size of 1.28 KB with dynamic FIFO sizing * Supports the session request protocol (SRP) and host negotiation protocol (HNP) * 1 bidirectional control endpoint + 5 IN endpoints + 5 OUT endpoints * 12 host channels with periodic OUT support * Software configurable to OTG1.3 and OTG2.0 modes of operation * USB 2.0 LPM (Link Power Management) support * Internal FS OTG PHY support * HNP/SNP/IP inside (no need for any external resistor) For OTG/Host modes, a power switch is needed in case bus-powered devices are connected 2.36 Universal serial bus on-the-go high-speed (OTG_HS) The device embeds a USB OTG high-speed (up to 480 Mb/s) device/host/OTG peripheral. The USB OTG HS supports both full-speed and high-speed operations. It integrates the transceivers for full-speed operation (12 MB/s) and features a UTMI low-pin interface (ULPI) for high-speed operation (480 MB/s). When using the USB OTG HS in HS mode, an external PHY device connected to the ULPI is required. The USB OTG HS peripheral is compliant with the USB 2.0 specification and with the OTG 2.0 specification. It has software-configurable endpoint setting and supports suspend/resume. The USB OTG controller requires a dedicated 48 MHz clock that is generated by a PLL connected to the HSE oscillator. DocID028010 Rev 4 43/217 46 Functional overview STM32F479xx The major features are: 2.37 * Combined Rx and Tx FIFO size of 4 KB with dynamic FIFO sizing * Supports the session request protocol (SRP) and host negotiation protocol (HNP) * 8 bidirectional endpoints * 16 host channels with periodic OUT support * Software configurable to OTG1.3 and OTG2.0 modes of operation * USB 2.0 LPM (Link Power Management) support * Internal FS OTG PHY support * External HS or HS OTG operation supporting ULPI in SDR mode. The OTG PHY is connected to the microcontroller ULPI port through 12 signals. It can be clocked using the 60 MHz output. * Internal USB DMA * HNP/SNP/IP inside (no need for any external resistor) * for OTG/Host modes, a power switch is needed in case bus-powered devices are connected Digital camera interface (DCMI) The devices embed a camera interface that can connect with camera modules and CMOS sensors through an 8-bit to 14-bit parallel interface, to receive video data. The camera interface can sustain a data transfer rate up to 54 Mbyte/s at 54 MHz. It features: 2.38 * Programmable polarity for the input pixel clock and synchronization signals * Parallel data communication can be 8-, 10-, 12- or 14-bit * Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2 progressive video, RGB 565 progressive video or compressed data (like JPEG) * Supports continuous mode or snapshot (a single frame) mode * Capability to automatically crop the image black & white. Cryptographic accelerator The devices embed a cryptographic accelerator. This cryptographic accelerator provides a set of hardware acceleration for the advanced cryptographic algorithms usually needed to provide confidentiality, authentication, data integrity and non repudiation when exchanging messages with a peer. * These algorithms consists of: Encryption/Decryption 44/217 - DES/TDES (data encryption standard/triple data encryption standard): ECB (electronic codebook) and CBC (cipher block chaining) chaining algorithms, 64,128- or 192-bit key - AES (advanced encryption standard): ECB, CBC, GCM, CCM, and CTR (counter mode) chaining algorithms, 128, 192 or 256-bit key DocID028010 Rev 4 STM32F479xx Functional overview Universal hash - SHA-1 and SHA-2 (secure hash algorithms) - MD5 - HMAC The cryptographic accelerator supports DMA request generation. 2.39 Random number generator (RNG) All devices embed an RNG that delivers 32-bit random numbers generated by an integrated analog circuit. 2.40 General-purpose input/outputs (GPIOs) Each of the GPIO pins can be configured by software as output (push-pull or open-drain, with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down) or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog alternate functions. All GPIOs are high-current-capable and have speed selection to better manage internal noise, power consumption and electromagnetic emission. The I/O configuration can be locked if needed by following a specific sequence in order to avoid spurious writing to the I/Os registers. Fast I/O handling allowing maximum I/O toggling up to 90 MHz. 2.41 Analog-to-digital converters (ADCs) Three 12-bit analog-to-digital converters are embedded and each ADC shares up to 16 external channels, performing conversions in the single-shot or scan mode. In scan mode, automatic conversion is performed on a selected group of analog inputs. Additional logic functions embedded in the ADC interface allow: * Simultaneous sample and hold * Interleaved sample and hold The ADC can be served by the DMA controller. An analog watchdog feature allows very precise monitoring of the converted voltage of one, some or all selected channels. An interrupt is generated when the converted voltage is outside the programmed thresholds. To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1, TIM2, TIM3, TIM4, TIM5, or TIM8 timer. 2.42 Temperature sensor The temperature sensor has to generate a voltage that varies linearly with temperature. The conversion range is between 1.7 V and 3.6 V. The temperature sensor is internally connected to the same input channel as VBAT, ADC1_IN18, which is used to convert the sensor output voltage into a digital value. When the temperature sensor and VBAT conversion are enabled at the same time, only VBAT conversion is performed. DocID028010 Rev 4 45/217 46 Functional overview STM32F479xx As the offset of the temperature sensor varies from chip to chip due to process variation, the internal temperature sensor is mainly suitable for applications that detect temperature changes instead of absolute temperatures. If an accurate temperature reading is needed, then an external temperature sensor part should be used. 2.43 Digital-to-analog converter (DAC) The two 12-bit buffered DAC channels can be used to convert two digital signals into two analog voltage signal outputs. This dual digital Interface supports the following features: * two DAC converters: one for each output channel * 8-bit or 10-bit monotonic output * left or right data alignment in 12-bit mode * synchronized update capability * noise-wave generation * triangular-wave generation * dual DAC channel independent or simultaneous conversions * DMA capability for each channel * external triggers for conversion * input voltage reference VREF+ Eight DAC trigger inputs are used in the device. The DAC channels are triggered through the timer update outputs that are also connected to different DMA streams. 2.44 Serial wire JTAG debug port (SWJ-DP) The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug port that enables either a serial wire debug or a JTAG probe to be connected to the target. Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to switch between JTAG-DP and SW-DP. 2.45 Embedded Trace MacrocellTM The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and data flow inside the CPU core by streaming compressed data at a very high rate from the STM32F47x through a small number of ETM pins to an external hardware trace port analyzer (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or any other high-speed channel. Real-time instruction and data flow activity can be recorded and then formatted for display on the host computer that runs the debugger software. TPA hardware is commercially available from common development tool vendors. The Embedded Trace Macrocell operates with third party debugger software tools. 46/217 DocID028010 Rev 4 STM32F479xx Pinouts and pin description 9'' 3% 3% %227 3% 3% 3% 3% 3% 3' 3' 3' 3' 3' 3' 3' 3' 3& 3& 3& 3$ 3$ 966 9'' 9&$3 Figure 13. STM32F47x LQFP100 pinout 3( 3$ 966 3$ 9%$7 3$ 3& 3$ 3& 3$ 3& 3$ 966 3& 9'' 3& 3+ 3& 3+ 3& 1567 9''86% 3& '6,+267B'1 3& '6,+267B'3 3& 9'''6, 3& '6,+267B&.1 966$ '6,+267B&.3 95() 966'6, 9''$ '6,+267B'1 3$ '6,+267B'3 3$ 9&$3'6, 3$ 9'''6, 3$ 3' 966 3' 9'' 3' 3$ 3' 3$ 3$ 3% 3% 3% 3( 3( 3( 3( 3( 3( 3( 3( 3( 3% 3% 9&$3 966 9'' 3% 3% 3% 3% 3' /4)3 3$ 3 Pinouts and pin description 069 1. The above figure shows the package top view. DocID028010 Rev 4 47/217 82 Pinouts and pin description STM32F479xx 3( 9'' 3'5B21 3( 3( 3% 3% %227 3% 3% 3% 3% 3% 3* 9'' 966 3* 3* 3* 3* 3' 9'' 966 3' 3' 3' 3' 3' 3' 3& 3& 3& 3$ 3$ 9'' 966 Figure 14. STM32F47x LQFP144 pinout 3( 3( 3( 3( 9&$3 3$ 3$ 3$ 9%$7 3$ 3& 3$ 3& 3& 3$ 3& 3) 3& 3) 3& 3) 3) 3& 9''86% 3) 3* 3) 3* 966 3* 9'' 3* 3) 3* 3+ 3* 3+ 3* /4)3 966 9'' 3' 3$ 3' 3$ 3' 9'' 966 3' 3' 3' 3$ 3% 3% 3' 3$ 3% 3% 9'''6, 3$ 3% 9&$3'6, 3$ 9&$3 9'' 3( 3% '6,+267B'3 9''$ 3) 3) 3* 3* 3( 3( 3( 966 9'' 3( 3( 3( 3( 3( '6,+267B'1 95() 3) 9'' 966'6, 966$ 3) '6,+267B&.3 9'' 3) 3% '6,+267B&.1 3& 3% 9'''6, 3& 3% 3& '6,+267B'3 3& 3& '6,+267B'1 3& 3$ 3$ 1567 069 1. The above figure shows the package top view. 48/217 DocID028010 Rev 4 STM32F479xx Pinouts and pin description Figure 15. STM32F47x WLCSP168 pinout $ 3, 9'' 3( 3% 3% 9'' 3* 3' 966 3' 3$ 3, % 3( 3, 966 3% 3% 966 3* 9'' 3' 3& 3, 3+ & 9%$7 3( 3, 3( 3% 3* 3' 3' 3& 3, 9'' 966 ' 3& 3( 3, 3'5B 21 3* 3* 3' 3& 3$ 3+ 9&$3 3$ ( 3& 3& 3( 3% 3* 3' 3' 3, 3+ 3$ 3$ 3$ ) 966 3, 3, 3( %227 3$ 3$ 3& 3& 3& 966 9'' 86% * 3) 9'' 3) 3, 3% 3& 3* 3* 3* 3* 3* 3* + 3) 3) 3) 1567 3) 966 3* 3% 3' '6, +267 B'3 '6, +267 B'1 966 '6, - 9'' 966 3) 3& 3$ 3) 3* 3( 3' '6, +267 B'1 '6, +267 B&.1 '6, +267 B&.3 . 3+ 3+ 3) 3$ 3+ 3) 3( 3% 3% '6, +267 B'3 9'' '6, 9&$3 '6, / 3& 966$ 3$ 3$ 3$ 3) 3( 3+ 3' 3' 3' 9'' '6, 0 9''$ 3+ 3+ 3$ 3) 3( 3( 3+ 3+ 3' 3' 966 1 3+ 966 3$ 3% 966 3( 3( 3% 9&$3 3+ 3% 3' 3 9'' 3$ 3% 3% 9'' 3* 3( 3( 966 9'' 3+ 3% 06Y9 1. The above figure shows the package bottom view. DocID028010 Rev 4 49/217 82 Pinouts and pin description STM32F479xx Figure 16. STM32F47x UFBGA169 ballout %227 3* 3* 3' 3& 3$ 3$ 3$ 3$ $ 3, 3, 3( 3( % 3, 3( 3, 3% 3% 3* 3' 3' 3& 3$, 3$ 3, 3, & 3( 3( 3'5B 21 3% 3% 3' 3' 3' 3' 3& 3, 3+ 3+ ' 3( 3( 9'' 3% 3% 3% 3' 3$ 3+ 9'' 966 9&$3 3* ( 3& 3, 966 3, 9%$7 3* 3* 3$ 3$ 3& 3* 3* 3* ) 3& 3, 3) 9'' 966 3* 9'' 966 3& 3& 3* 3* 3* * 3+ 3+ 3) 3& 3) 3( 966 9'' 966 3& 9'' 86% '6, +267B '3 '6, +267B '1 + 3) 1567 3) 3) 3) 3( 3( 3+ 3+ 3+ 966'6, '6, +267B &.3 '6,B +267 &.1 - 966 966$ 9''$ 9'' 3$ 966 966 3( 3+ 966 9'' '6, '6, +267B '3 '6, +267B '1 . 3$ 3$ 3$ 3$ 3% 9'' 3( 3( 3+ 9'' 966'6, 9&$3 '6, 9'' '6, / 3+ 3+ 3+ 3) 3% 9'' 3( 3( 9'' 3' 3' 3' 3' 0 3& 3+ 3$ 3) 3) 3) 3* 3% 966 3' 3' 3' 3' 1 3& 3$ 3$ 3% 3) 3* 3( 3% 9&$3 3% 3% 3% 3% 06Y9 1. The above figure shows the package top view. 50/217 DocID028010 Rev 4 STM32F479xx Pinouts and pin description Figure 17. STM32F47x UFBGA176 ballout $ 3( 3( 3( 3( 3% 3% 3* 3* 3% 3% 3' 3& 3$ 3$ 3 $ % 3( 3( 3( 3% 3% 3% 3* 3* 3* 3* 3' 3' 3& 3& 3$ & 9%$7 3 , 3 , 3 , 9'' 3'5 B21 9'' 9'' 9'' 3* 3' 3' 3 , 1& 3$ ' 3 & 3, 3 , 3 , 966 %227 966 966 966 3' 3' 3' 9'' '6, 3, 3$ ( 3 & 3) 3, 3 , '6, +267B '3 '6, +267B '1 3 , 3$ ) 3 & 966 9'' 3+ 966 966 966 966 966 9 66 9&$3 3& 3$ * 3+ 96 6 9 '' 3+ 966 966 966 966 966 9 66 9'' 3& 3& + 3+ 3) 3) 3+ 966 966 966 966 966 966 '6, 9''B 86% 3* 3& - 1567 3) 3 ) 3+ 966 966 966 966 966 9'' '6, 9'' 3* 3* . 3) 3) 3) 9 '' 966 966 966 966 966 9&$3 '6, 3* 3* 3* 3) 3) 3) %<3$66 B5(* '6, +267B &.3 '6, +267B &.1 3' 0 966$ 3& 3& 3& 3& 3% 3* 966 966 9&$3 B 3+ '6, +267B '3 '6, +267B '1 3' 3' 1 95() 3$ 3$ 3$ 3& 3) 3* 9 '' 9 '' 9 '' 3( 3+ 3' 3' 3 ' 95() 3$ 3$ 3$ 3& 3) 3) 3( 3( 3 ( 3( 3% 3% 3' 3' 9''$ 3$ 3$ 3% 3% 3) 3) 3( 3( 3( 3( 3% 3% 3 % 3 % / 3 5 3* 069 1. The above figure shows the package top view. DocID028010 Rev 4 51/217 82 Pinouts and pin description STM32F479xx 3, 3, 3, 3, 9'' 3'5B21 3( 3( 3% 3% %227 3% 3% 3% 3% 3% 3* 9'' 966 3* 3* 3* 3* 3* 3* 3' 3' 9'' 966 3' 3' 3' 3' 3' 3' 3& 3& 3& 3$ 3$ 9'' 966 3, 3, Figure 18. STM32F47x LQFP176 pinout /4)3 3, 9'' 966 9&$3 3$ 3$ 3$ 3$ 3$ 3$ 3& 3& 3& 3& 9''86% 966 3* 3* 3* 3* 3* 3* 3* 966'6, '6,+267B'1 '6,+267B'3 9'''6, '6,+267B&.1 '6,+267B&.3 966'6, '6,+267B'1 '6,+267B'3 9&$3'6, 9'''6, 3' 3' 9'' 966 3' 3' 3' 3' 3' 3' 3+ 3+ 3$ %<3$66B5(* 9'' 3$ 3$ 3$ 3$ 3& 3& 3% 3% 3% 3) 3) 966 9'' 3) 3) 3) 3* 3* 3( 3( 3( 966 9'' 3( 3( 3( 3( 3( 3( 3% 3% 9&$3B 9'' 3+ 3+ 3% 3% 3% 3% 3( 3( 3( 3( 3( 9%$7 3, 3& 3& 3& 3, 3, 3, 966 9'' 3) 3) 3) 3) 3) 3) 966 9'' 3) 3) 3) 3) 3) 3+ 3+ 1567 3& 3& 3& 3& 9'' 966$ 95() 9''$ 3$ 3$ 3$ 3+ 3+ 1. The above figure shows the package top view. 52/217 DocID028010 Rev 4 069 STM32F479xx Pinouts and pin description 3, 3, 3, 3, 9'' 3'5B21 966 3( 3( 3% 3% %227 3% 3% 3% 3% 3% 3* 3. 3. 3. 3. 3. 9'' 966 3* 3* 3* 3* 3* 3* 3- 3- 3- 3- 3' 3' 9'' 966 3' 3' 3' 3' 3' 3' 3& 3& 3& 3$ 3$ 9'' 3, Figure 19. STM32F47x LQFP208 pinout /4)3 3, 3, 3, 3+ 3+ 3+ 9'' 966 9&$3 3$ 3$ 3$ 3$ 3$ 3$ 3& 3& 3& 3& 9''86% 966 3* 3* 3* 3* 3* 3* 3* 966'6, '6,+267B'1 '6,+267B'3 9'''6, '6,+267B&.1 '6,+267B&.3 966'6, '6,+267B'1 '6,+267B'3 9&$3'6, 9'''6, 3' 3' 9'' 966 3' 3' 3' 3' 3' 3' 3% 3% 3% 3$ 3$ 3$ 3$ 3& 3& 9'' 966 3% 3% 3% 3, 3- 3- 3- 3- 3- 3) 3) 966 9'' 3) 3) 3) 3* 3* 3( 3( 3( 966 9'' 3( 3( 3( 3( 3( 3( 3% 3% 9&$3 966 9'' 3- 3+ 3+ 3+ 3+ 3+ 3+ 3+ 9'' 3% 3( 3( 3( 3( 3( 9%$7 3, 3& 3& 3& 3, 3, 3, 966 9'' 3) 3) 3) 3, 3, 3, 3) 3) 3) 966 9'' 3) 3) 3) 3) 3) 3+ 3+ 1567 3& 3& 3& 3& 9'' 966$ 95() 9''$ 3$ 3$ 3$ 3+ 3+ 3+ 3+ 3$ 966 9'' 06Y9 1. The above figure shows the package top view. DocID028010 Rev 4 53/217 82 Pinouts and pin description STM32F479xx Figure 20. STM32F47x TFBGA216 ballout $ 3( 3( 3( 3* 3( 3( 3% 3% 3% 3% 3' 3& 3$ 3$ 3$ % 3( 3( 3* 3% 3% 3% 3* 3* 3- 3- 3' 3' 3& 3& 3$ & 9%$7 3, 3, 3. 3. 3. 3* 3* 3- 3' 3' 3' 3, 3, 3$ ' 3& 3) 3, 3, 3, 3, 3. 3. 3* 3- 3' 3' 3+ 3, 3$ ( 3& 3) 3, 3, 3'5 21 %227 9'' 9'' 9'' 9'' 9&$3 3+ 3+ 3, 3$ ) 3& 966 3, 9'' 9'' 966 966 966 966 966 9'' '6, +267B '3 '6, +267B '1 3& 3$ * 3+ 3) 3, 9'' 966 966 9''' 86% 966 '6, 9'' '6, 3& 3& + 3+ 3) 3, 3+ 9'' 966 966 9'' '6, '6, +267B &.3 '6, +267B &.1 3* 3& - 1567 3) 3+ 3+ 9'' 966 966 9'' '6, +267B '3 '6, +267B '1 3* 3* . 3) 3) 3) 3+ 9'' 966 966 966 966 966 9'' 9&$3 '6, 3' 3% 3' / 3) 3) 3) 3& %<3$66 5(* 966 9'' 9'' 9'' 9'' 9&$3 3' 3% 3' 3' 0 966$ 3& 3& 3& 3% 3) 3* 3) 3- 3' 3' 3* 3* 3- 3+ 1 95() 3$ 3$ 3$ 3& 3) 3* 3- 3( 3' 3* 3* 3+ 3+ 3+ 3 95() 3$ 3$ 3$ 3& 3) 3- 3) 3( 3( 3( 3% 3+ 3+ 3+ 5 9''$ 3$ 3$ 3% 3% 3- 3- 3( 3( 3( 3( 3( 3% 3% 3% 3, 06Y9 1. The above figure shows the package top view. 54/217 DocID028010 Rev 4 STM32F479xx Pinouts and pin description Table 9. Legend/abbreviations used in the pinout table Name Pin name Pin type I/O structure Notes Abbreviation Definition Unless otherwise specified in brackets below the pin name, the pin function during and after reset is the same as the actual pin name S Supply pin I Input only pin I/O Input / output pin FT 5 V tolerant I/O TTa 3.3 V tolerant I/O directly connected to analog parts B Dedicated BOOT0 pin RST Bidirectional reset pin with weak pull-up resistor Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset Alternate functions Functions selected through GPIOx_AFR registers Additional functions Functions directly selected/enabled through peripheral registers DocID028010 Rev 4 55/217 82 Pinouts and pin description STM32F479xx B2 F9 A2 1 1 A3 PE2 I/O FT - 1 C1 E10 A1 2 2 A2 PE3 I/O FT - TRACED0, SAI1_SD_B, FMC_A19, EVENTOUT - - NC (2) NC (2) NC (2) LQFP208 144 TRACECLK, SPI4_SCK, SAI1_MCLK_A, QUADSPI_BK1_IO2, ETH_MII_TXD3, FMC_A23, EVENTOUT LQFP176 Notes Pin types TFBGA216 UFBGA176 WLCSP168 UFBGA169 Alternate functions LQFP144 LQFP100 1 Pin name (function after reset)(1) I/O structures Table 10. STM32F479xx pin and ball definitions Pin number Additional functions - 2 C2 C11 B1 3 3 A1 PE4 I/O FT - TRACED1, SPI4_NSS, SAI1_FS_A, FMC_A20, DCMI_D4, LCD_B0, EVENTOUT 3 D1 B12 B2 4 4 B1 PE5 I/O FT - TRACED2, TIM9_CH1, SPI4_MISO, SAI1_SCK_A, FMC_A21, DCMI_D6, LCD_G0, EVENTOUT - - (2) 4 D2 D11 B3 5 5 B2 PE6 I/O FT - TRACED3, TIM9_CH2, SPI4_MOSI, SAI1_SD_A, FMC_A22, DCMI_D7, LCD_G1, EVENTOUT 2 - - - - - - G6 VSS S - - - - - - - - - - - F5 VDD S - - - - 3 5 E5 C12 C1 6 6 C1 VBAT S - - - - - - - - D2 7 7 C2 PI8 I/O FT EVENTOUT RTC_TAMP1/ RTC_TAMP2/ RTC_TS 4 6 G4 D12 D1 8 8 D1 PC13 I/O FT EVENTOUT RTC_TAMP1/ RTC_TS/ RTC_OUT 5 7 E1 E11 E1 9 9 E1 PC14-OSC32_IN (PC14) I/O FT EVENTOUT OSC32_IN 6 8 F1 E12 F1 10 10 F1 PC15OSC32_OUT (PC15) I/O FT (4) EVENTOUT OSC32_OUT - - - - - - - G5 VDD S - - - - - - E2 G9 D3 11 11 E4 PI9 I/O FT CAN1_RX, FMC_D30, LCD_VSYNC, EVENTOUT - - - E4 F10 E3 12 12 D5 PI10 I/O FT ETH_MII_RX_ER, FMC_D31, LCD_HSYNC, EVENTOUT - - - F2 F11 E4 13 13 F3 PI11 I/O FT LCD_G6, OTG_HS_ULPI_DIR, EVENTOUT - - - F5 F12 F2 14 14 F2 VSS S - - - - - - F4 G11 F3 15 15 F4 VDD S - - - - NC 56/217 DocID028010 Rev 4 (3) (4) (3) (4) (3) (4) (3) STM32F479xx Pinouts and pin description Table 10. STM32F479xx pin and ball definitions (continued) LQFP144 UFBGA169 WLCSP168 UFBGA176 LQFP176 LQFP208 TFBGA216 Pin name (function after reset)(1) Pin types I/O structures - 9 F3 G10 E2 16 16 D2 PF0 I/O FT I2C2_SDA, FMC_A0, EVENTOUT - - 10 G3 H10 H3 17 17 E2 PF1 I/O FT I2C2_SCL, FMC_A1, EVENTOUT - - 11 G5 G12 H2 18 18 G2 PF2 I/O FT I2C2_SMBA, FMC_A2, EVENTOUT - - - - - - - 19 E3 PI12 I/O FT LCD_HSYNC, EVENTOUT - - - - - - - 20 G3 PI13 I/O FT LCD_VSYNC, EVENTOUT - - - - - - - 21 H3 PI14 I/O FT - 12 13 H4 L4 H11 J10 J2 J3 19 20 22 23 H2 J2 PF3 PF4 I/O I/O Notes LQFP100 Pin number Alternate functions Additional functions LCD_CLK, EVENTOUT - FT (5) FMC_A3, EVENTOUT ADC3_IN9 FT (5) FMC_A4, EVENTOUT ADC3_IN14 FMC_A5, EVENTOUT ADC3_IN15 - 14 H3 H12 K3 21 24 K3 PF5 I/O FT (5) 7 15 G7 J11 G2 22 25 H6 VSS S - - - - 8 16 G8 J12 G3 23 26 H5 VDD S - - - - - - - - K2 24 27 K2 PF6 I/O FT (5) TIM10_CH1, SPI5_NSS, SAI1_SD_B, UART7_Rx, QUADSPI_BK1_IO3, EVENTOUT ADC3_IN4 TIM11_CH1, SPI5_SCK, SAI1_MCLK_B, UART7_Tx, QUADSPI_BK1_IO2, EVENTOUT ADC3_IN5 - - - - K1 25 28 K1 PF7 I/O FT (5) - - - - L3 26 29 L3 PF8 I/O FT (5) SPI5_MISO, SAI1_SCK_B, TIM13_CH1, QUADSPI_BK1_IO0, EVENTOUT ADC3_IN6 SPI5_MOSI, SAI1_FS_B, TIM14_CH1, QUADSPI_BK1_IO1, EVENTOUT ADC3_IN7 - - - - L2 27 30 L2 PF9 I/O FT (5) - 17 H1 K10 L1 28 31 L1 PF10 I/O FT (5) QUADSPI_CLK, DCMI_D11, LCD_DE, EVENTOUT ADC3_IN8 9 18 G2 K11 G1 29 32 G1 PH0-OSC_IN (PH0) I/O FT - EVENTOUT OSC_IN 10 19 G1 K12 H1 30 33 H1 PH1-OSC_OUT (PH1) I/O FT - EVENTOUT OSC_OUT 11 20 H2 H9 J1 31 34 J1 NRST I/O RST - 12 21 M1 J9 M2 32 35 M2 PC0 I/O FT (5) OTG_HS_ULPI_STP, FMC_SDNWE, LCD_R5, EVENTOUT ADC123_ IN10 DocID028010 Rev 4 57/217 82 Pinouts and pin description STM32F479xx Table 10. STM32F479xx pin and ball definitions (continued) Notes M3 PC1 I/O FT 14 23 - - M4 34 37 M4 PC2 I/O FT (5) SPI2_MISO, I2S2ext_SD, OTG_HS_ULPI_DIR, ETH_MII_TXD2, FMC_SDNE0, EVENTOUT ADC123_ IN12 ADC123_ IN13 Pin name (function after reset)(1) Pin types 36 TFBGA216 33 LQFP208 M3 LQFP176 L12 UFBGA176 N1 WLCSP168 22 TRACED0, SPI2_MOSI/I2S2_SD, SAI1_SD_A, ETH_MDC, EVENTOUT UFBGA169 13 (5) LQFP144 Alternate functions LQFP100 I/O structures Pin number Additional functions ADC123_ IN11 15 24 - - M5 35 38 L4 PC3 I/O FT (5) SPI2_MOSI/I2S2_SD, OTG_HS_ULPI_NXT, ETH_MII_TX_CLK, FMC_SDCKE0, EVENTOUT - 25 - - - 36 39 J5 VDD S - - - - - - - - - - - J6 VSS S - - - - 16 26 J2 L11 M1 37 40 M1 VSSA S - - - - - - - - N1 - - N1 VREF- S - - - - 17 27 - - P1 38 41 P1 VREF+ S - - - - 18 28 J3 M12 R1 39 42 R1 VDDA S - - - - (6) TIM2_CH1/TIM2_ETR, TIM5_CH1, TIM8_ETR, USART2_CTS, UART4_TX, ETH_MII_CRS, EVENTOUT ADC123_IN0, WKUP ADC123_IN1 19 29 J5 L10 N3 40 43 N3 PA0-WKUP(PA0) I/O FT 20 30 K1 K9 N2 41 44 N2 PA1 I/O FT (5) TIM2_CH2, TIM5_CH2, USART2_RTS, UART4_RX, QUADSPI_BK1_IO3, ETH_MII_RX_CLK/ETH_R MII_REF_CLK, LCD_R2, EVENTOUT 21 31 K2 L9 P2 42 45 P2 PA2 I/O FT (5) TIM2_CH3, TIM5_CH3, TIM9_CH1, USART2_TX, ETH_MDIO, LCD_R1, EVENTOUT ADC123_IN2 - - - L2 M11 F4 43 46 K4 PH2 I/O FT - QUADSPI_BK2_IO0, ETH_MII_CRS, FMC_SDCKE0, LCD_R0, EVENTOUT - - L1 N12 G4 44 47 J4 PH3 I/O FT - QUADSPI_BK2_IO1, ETH_MII_COL, FMC_SDNE0, LCD_R1, EVENTOUT - - - M2 M10 H4 45 48 H4 PH4 I/O FT - I2C2_SCL, LCD_G5, OTG_HS_ULPI_NXT, LCD_G4, EVENTOUT - 58/217 DocID028010 Rev 4 STM32F479xx Pinouts and pin description UFBGA169 WLCSP168 UFBGA176 LQFP176 LQFP208 TFBGA216 - - L3 K8 J4 46 49 J3 PH5 I/O Notes LQFP144 Pin name (function after reset)(1) Pin types LQFP100 Pin number I/O structures Table 10. STM32F479xx pin and ball definitions (continued) Alternate functions Additional functions FT - I2C2_SDA, SPI5_NSS, FMC_SDNWE, EVENTOUT - ADC123_IN3 22 32 K3 N10 R2 47 50 R2 PA3 I/O FT (5) TIM2_CH4, TIM5_CH4, TIM9_CH2, USART2_RX, LCD_B2, OTG_HS_ULPI_D0, ETH_MII_COL, LCD_B5, EVENTOUT 23 33 J1 N11 - - 51 K6 VSS S - - - - - - - - L4 48 - L5 BYPASS_REG I FT - - - 24 34 J4 P12 K4 49 52 K5 VDD S - - - - ADC12_IN4, DAC_OUT1 25 35 N2 M9 N4 50 53 N4 PA4 I/O TTa - SPI1_NSS, SPI3_NSS/I2S3_WS, USART2_CK, OTG_HS_SOF, DCMI_HSYNC, LCD_VSYNC, EVENTOUT 26 36 M3 L8 P4 51 54 P4 PA5 I/O TTa - TIM2_CH1/TIM2_ETR, TIM8_CH1N, SPI1_SCK, OTG_HS_ULPI_CK, LCD_R4, EVENTOUT ADC12_IN5, DAC_OUT2 (5) TIM1_BKIN, TIM3_CH1, TIM8_BKIN, SPI1_MISO, TIM13_CH1, DCMI_PIXCLK, LCD_G2, EVENTOUT ADC12_IN6 ADC12_IN7 27 37 N3 P11 P3 52 55 P3 PA6 I/O FT 38 K4 J8 R3 53 56 R3 PA7 I/O FT (5) TIM1_CH1N, TIM3_CH2, TIM8_CH1N, SPI1_MOSI, TIM14_CH1, QUADSPI_CLK, ETH_MII_RX_DV/ETH_RMI I_CRS_DV, FMC_SDNWE, EVENTOUT 39 - - N5 54 57 N5 PC4 I/O FT (5) ETH_MII_RXD0/ETH_RMII _RXD0, FMC_SDNE0, EVENTOUT ADC12_IN14 (2) 40 - - P5 55 58 P5 PC5 I/O FT (5) ETH_MII_RXD1/ETH_RMII _RXD1, FMC_SDCKE0, EVENTOUT ADC12_IN15 - - - - - - 59 L7 VDD S - - - - - - - - - - 60 L6 VSS S - - - - (5) TIM1_CH2N, TIM3_CH3, TIM8_CH2N, LCD_R3, OTG_HS_ULPI_D1, ETH_MII_RXD2, LCD_G1, EVENTOUT ADC12_IN8 28 NC (2) NC 29 41 N4 P10 R5 56 61 R5 PB0 I/O FT DocID028010 Rev 4 59/217 82 Pinouts and pin description STM32F479xx K5 N9 R4 57 62 R4 PB1 I/O FT (5) 31 43 L5 P9 M6 58 63 M5 PB2BOOT1(PB2) I/O FT - EVENTOUT - - - - - - - 64 G4 PI15 I/O FT - LCD_G2, LCD_R0, EVENTOUT - - - - - - - 65 R6 PJ0 I/O FT - LCD_R7, LCD_R1, EVENTOUT - - - - - - - 66 R7 PJ1 I/O FT - LCD_R2, EVENTOUT - - - - - - - 67 P7 PJ2 I/O FT - DSIHOST_TE, LCD_R3, EVENTOUT - - - - - - - 68 N8 PJ3 I/O FT - LCD_R4, EVENTOUT - - - - - - - 69 M9 PJ4 I/O FT - LCD_R5, EVENTOUT - - 44 M5 K7 R6 59 70 P8 PF11 I/O FT - SPI5_MOSI, FMC_SDNRAS, DCMI_D12, EVENTOUT - - 45 N5 M8 P6 60 71 M6 PF12 I/O FT - FMC_A6, EVENTOUT - - - J6 N8 M8 61 72 K7 VSS S - - - - - 46 K6 P8 N8 62 73 L8 VDD S - - - - - 47 M4 J7 N6 63 74 N6 PF13 I/O FT - FMC_A7, EVENTOUT - - 48 H5 L7 R7 64 75 P6 PF14 I/O FT - FMC_A8, EVENTOUT - - 49 M6 H8 P7 65 76 M8 PF15 I/O FT - FMC_A9, EVENTOUT - - 50 N6 J6 N7 66 77 N7 PG0 I/O FT - FMC_A10, EVENTOUT - - 51 M7 P7 M7 67 78 M7 PG1 I/O FT - FMC_A11, EVENTOUT - 32 52 N7 N7 R8 68 79 R8 PE7 I/O FT - TIM1_ETR, UART7_Rx, QUADSPI_BK2_IO0, FMC_D4, EVENTOUT - 33 53 G6 M7 P8 69 80 N9 PE8 I/O FT - TIM1_CH1N, UART7_Tx, QUADSPI_BK2_IO1, FMC_D5, EVENTOUT - 34 54 H6 K6 P9 70 81 P9 PE9 I/O FT - TIM1_CH1, QUADSPI_BK2_IO2, FMC_D6, EVENTOUT - - 55 J7 - M9 71 82 K8 VSS S - - - - - 56 L6 - N9 72 83 L9 VDD S - - - - 35 57 H7 P6 R9 73 84 R9 PE10 I/O FT - TIM1_CH2N, QUADSPI_BK2_IO3, FMC_D7, EVENTOUT - 60/217 LQFP208 42 LQFP176 30 TIM1_CH3N, TIM3_CH4, TIM8_CH3N, LCD_R6, OTG_HS_ULPI_D2, ETH_MII_RXD3, LCD_G0, EVENTOUT LQFP144 Alternate functions LQFP100 Notes Pin name (function after reset)(1) Pin types TFBGA216 UFBGA176 WLCSP168 UFBGA169 Pin number I/O structures Table 10. STM32F479xx pin and ball definitions (continued) DocID028010 Rev 4 Additional functions ADC12_IN9 STM32F479xx Pinouts and pin description Table 10. STM32F479xx pin and ball definitions (continued) LQFP100 LQFP144 UFBGA169 WLCSP168 UFBGA176 LQFP176 LQFP208 TFBGA216 Pin name (function after reset)(1) Pin types I/O structures Notes Pin number Alternate functions 36 58 K7 N6 P10 74 85 P10 PE11 I/O FT - TIM1_CH2, SPI4_NSS, FMC_D8, LCD_G3, EVENTOUT - 37 59 L7 M6 R10 75 86 R10 PE12 I/O FT - TIM1_CH3N, SPI4_SCK, FMC_D9, LCD_B4, EVENTOUT - 38 60 J8 L6 N11 76 87 R12 PE13 I/O FT - TIM1_CH3, SPI4_MISO, FMC_D10, LCD_DE, EVENTOUT - 39 61 K8 J5 P11 77 88 P11 PE14 I/O FT - TIM1_CH4, SPI4_MOSI, FMC_D11, LCD_CLK, EVENTOUT - 40 62 L8 P5 R11 78 89 R11 PE15 I/O FT - TIM1_BKIN, FMC_D12, LCD_R7, EVENTOUT - - TIM2_CH3, I2C2_SCL, SPI2_SCK/I2S2_CK, USART3_TX, QUADSPI_BK1_NCS, OTG_HS_ULPI_D3, ETH_MII_RX_ER, LCD_G4, EVENTOUT - - 41 63 M8 N5 R12 79 90 P12 PB10 I/O FT Additional functions 42 64 N8 K5 R13 80 91 R13 PB11 I/O FT - TIM2_CH4, I2C2_SDA, USART3_RX, OTG_HS_ULPI_D4, ETH_MII_TX_EN/ETH_RMI I_TX_EN, DSIHOST_TE, LCD_G5, EVENTOUT 43 65 N9 N4 M10 81 92 L11 VCAP1 S - - - - 44 - M9 P4 - - 93 K9 VSS S - - - - 45 66 L9 P3 N10 82 94 L10 VDD S - - - - - - - - - - 95 M14 PJ5 I/O FT - LCD_R6, EVENTOUT - - I2C2_SMBA, SPI5_SCK, TIM12_CH1, ETH_MII_RXD2, FMC_SDNE1, DCMI_D8, EVENTOUT - - - - - - M11 83 96 P13 PH6 I/O FT - - - - N12 84 97 N13 PH7 I/O FT - I2C3_SCL, SPI5_MISO, ETH_MII_RXD3, FMC_SDCKE1, DCMI_D9, EVENTOUT - - H8 M5 - - 98 P14 PH8 I/O FT - I2C3_SDA, FMC_D16, DCMI_HSYNC, LCD_R2, EVENTOUT - - - H9 L5 - - 99 N14 PH9 I/O FT - I2C3_SMBA, TIM12_CH2, FMC_D17, DCMI_D0, LCD_R3, EVENTOUT - DocID028010 Rev 4 61/217 82 Pinouts and pin description STM32F479xx Table 10. STM32F479xx pin and ball definitions (continued) UFBGA169 WLCSP168 UFBGA176 LQFP176 Pin types I/O structures Notes - - J9 M4 - - 100 P15 PH10 I/O FT - TIM5_CH1, FMC_D18, DCMI_D1, LCD_R4, EVENTOUT - - - K9 N3 - - 101 N15 PH11 I/O FT - TIM5_CH2, FMC_D19, DCMI_D2, LCD_R5, EVENTOUT - - - H10 P2 - - 102 M15 PH12 I/O FT - TIM5_CH3, FMC_D20, DCMI_D3, LCD_R6, EVENTOUT - - - - H7 - - - K10 VSS S - - - - - 66 - - - - 103 K11 VDD S - - - - - TIM1_BKIN, I2C2_SMBA, SPI2_NSS/I2S2_WS, USART3_CK, CAN2_RX, OTG_HS_ULPI_D5, ETH_MII_TXD0/ETH_RMII _TXD0, OTG_HS_ID, EVENTOUT - - TIM1_CH1N, SPI2_SCK/I2S2_CK, USART3_CTS, CAN2_TX, OTG_HS_ULPI_D6, ETH_MII_TXD1/ETH_RMII _TXD1, EVENTOUT OTG_HS_ VBUS - TIM1_CH2N, TIM8_CH2N, SPI2_MISO, I2S2ext_SD, USART3_RTS, TIM12_CH1, OTG_HS_DM, EVENTOUT - - 46 47 48 67 68 69 N10 N11 N12 H5 K4 P1 P12 P13 R14 85 86 87 104 TFBGA216 LQFP144 Alternate functions LQFP208 LQFP100 Pin number L13 105 K14 106 R14 Pin name (function after reset)(1) PB12 PB13 PB14 I/O I/O I/O FT FT FT Additional functions 49 70 N13 N2 R15 88 107 R15 PB15 I/O FT - RTC_REFIN, TIM1_CH3N, TIM8_CH3N, SPI2_MOSI/I2S2_SD, TIM12_CH2, OTG_HS_DP, EVENTOUT 50 71 L10 L4 P15 89 108 L15 PD8 I/O FT - USART3_TX, FMC_D13, EVENTOUT - 51 72 M10 N1 P14 90 109 L14 PD9 I/O FT - USART3_RX, FMC_D14, EVENTOUT - 52 73 L11 M3 N15 91 110 K15 PD10 I/O FT - USART3_CK, FMC_D15, LCD_B3, EVENTOUT - - USART3_CTS, QUADSPI_BK1_IO0, FMC_A16/FMC_CLE, EVENTOUT - - 74 62/217 M11 J4 N14 92 111 N10 PD11 I/O FT DocID028010 Rev 4 STM32F479xx Pinouts and pin description M13 M2 N13 93 112 M10 PD12 I/O FT - - - M12 H4 M15 94 113 M11 PD13 I/O FT - TIM4_CH2, QUADSPI_BK1_IO3, FMC_A18, EVENTOUT - - 76 J10 M1 - 95 114 J10 VSS S - - - - - 77 K10 - J13 96 115 J11 VDD S - - - - 53 78 L12 L3 M14 97 116 L12 PD14 I/O FT - TIM4_CH3, FMC_D0, EVENTOUT - 54 79 L13 L2 L14 98 117 K13 PD15 I/O FT - TIM4_CH4, FMC_D1, EVENTOUT - 55 80 K13 L1 J12 99 118 H11 VDDDSI S - - - - - - - - - - - H10 VSS S - - - - 56 81 K12 K1 K12 100 119 K12 VCAPDSI S - - - - - - - K2 D13 - G13 VDD12DSI S - - - - 57 82 J12 K3 M12 101 120 J12 DSIHOST_D0P I/O - - - - 58 83 J13 J3 M13 102 121 J13 DSIHOST_D0N I/O - - - - 59 84 K11 H1 H12 103 122 G12 VSSDSI S - - - - 60 85 H12 J1 L12 104 123 H12 DSIHOST_CKP I/O - - - - 61 86 H13 J2 L13 105 124 H13 DSIHOST_CKN I/O - - - - 62 87 J11 - D13 106 125 - VDD12DSI S - - - - 63 88 G12 H3 E12 107 126 F12 DSIHOST_D1P I/O - - - - 64 89 G13 H2 E13 108 127 F13 DSIHOST_D1N I/O - - - - - - H11 - H12 109 128 - VSSDSI S - - - - - 90 F13 G5 L15 110 129 M13 PG2 I/O FT - FMC_A12, EVENTOUT - - 91 F12 G4 K15 111 130 M12 PG3 I/O FT - FMC_A13, EVENTOUT - - 92 E13 G2 K14 112 131 N12 PG4 I/O FT - FMC_A14/FMC_BA0, EVENTOUT - - 93 E12 G1 K13 113 132 N11 PG5 I/O FT - FMC_A15/FMC_BA1, EVENTOUT - - 94 F11 G3 J15 114 133 PG6 I/O FT - DCMI_D12, LCD_R7, EVENTOUT - - SAI1_MCLK_A, USART6_CK, FMC_INT, DCMI_D13, LCD_CLK, EVENTOUT - - 95 E11 H6 J14 - 115 LQFP208 75 LQFP176 - TIM4_CH1, USART3_RTS, QUADSPI_BK1_IO1, FMC_A17/FMC_ALE, EVENTOUT LQFP144 Alternate functions LQFP100 Notes Pin name (function after reset)(1) Pin types TFBGA216 UFBGA176 WLCSP168 UFBGA169 Pin number I/O structures Table 10. STM32F479xx pin and ball definitions (continued) 134 J15 J14 PG7 I/O FT DocID028010 Rev 4 Additional functions - 63/217 82 Pinouts and pin description STM32F479xx D13 G6 H14 116 135 H14 PG8 I/O FT - - - G9 F2 G12 117 136 G10 VSS S - - - - 65 97 G11 F1 H13 118 137 G11 VDDUSB S - - - - 66 98 F9 F3 H15 119 138 H15 PC6 I/O FT - TIM3_CH1, TIM8_CH1, I2S2_MCK, USART6_TX, SDIO_D6, DCMI_D0, LCD_HSYNC, EVENTOUT - - LQFP208 96 LQFP176 - SPI6_NSS, USART6_RTS, ETH_PPS_OUT, FMC_SDCLK, LCD_G7, EVENTOUT LQFP144 Alternate functions LQFP100 Notes Pin name (function after reset)(1) Pin types TFBGA216 UFBGA176 WLCSP168 UFBGA169 Pin number I/O structures Table 10. STM32F479xx pin and ball definitions (continued) Additional functions - 67 99 F10 G7 G15 120 139 G15 PC7 I/O FT - TIM3_CH2, TIM8_CH2, I2S3_MCK, USART6_RX, SDIO_D7, DCMI_D1, LCD_G6, EVENTOUT 68 100 E10 F4 G14 121 140 G14 PC8 I/O FT - TRACED1, TIM3_CH3, TIM8_CH3, USART6_CK, SDIO_D0, DCMI_D2, EVENTOUT - - 69 101 G10 F5 F14 122 141 F14 PC9 I/O FT - MCO2, TIM3_CH4, TIM8_CH4, I2C3_SDA, I2S_CKIN, QUADSPI_BK1_IO0, SDIO_D1, DCMI_D3, EVENTOUT 70 102 E1 F15 123 142 F15 PA8 I/O FT - MCO1, TIM1_CH1, I2C3_SCL, USART1_CK, OTG_FS_SOF, LCD_R6, EVENTOUT - OTG_FS_ VBUS D8 71 103 E8 E2 E15 124 143 E15 PA9 I/O FT - TIM1_CH2, I2C3_SMBA, SPI2_SCK/I2S2_CK, USART1_TX, DCMI_D0, EVENTOUT 72 104 E9 E3 D15 125 144 D15 PA10 I/O FT - TIM1_CH3, USART1_RX, OTG_FS_ID, DCMI_D1, EVENTOUT - 73 105 A13 F7 C15 126 145 C15 PA11 I/O FT - TIM1_CH4, USART1_CTS, CAN1_RX, OTG_FS_DM, LCD_R4, EVENTOUT - 74 106 A12 F6 B15 127 146 B15 PA12 I/O FT - TIM1_ETR, USART1_RTS, CAN1_TX, OTG_FS_DP, LCD_R5, EVENTOUT - 75 107 A11 D1 A15 128 147 A15 PA13(JTMSSWDIO) I/O FT - JTMS-SWDIO, EVENTOUT - 76 108 D12 D2 F13 129 148 E11 VCAP2 S - - - - - 109 D11 C1 F12 130 149 F10 VSS S - - - - 64/217 DocID028010 Rev 4 STM32F479xx Pinouts and pin description F11 VDD S Notes Pin name (function after reset)(1) Pin types LQFP208 G13 131 150 TFBGA216 C2 LQFP176 110 D10 UFBGA176 LQFP144 77 WLCSP168 LQFP100 UFBGA169 Pin number I/O structures Table 10. STM32F479xx pin and ball definitions (continued) Alternate functions Additional functions - - - - - - D9 B1 - - 151 E12 PH13 I/O FT - TIM8_CH1N, CAN1_TX, FMC_D21, LCD_G2, EVENTOUT - - - C13 D3 - - 152 E13 PH14 I/O FT - TIM8_CH2N, FMC_D22, DCMI_D4, LCD_G3, EVENTOUT - - - C12 E4 - - 153 D13 PH15 I/O FT - TIM8_CH3N, FMC_D23, DCMI_D11, LCD_G4, EVENTOUT - - - - B13 E5 E14 132 154 E14 PI0 I/O FT - TIM5_CH4, SPI2_NSS/I2S2_WS(7), FMC_D24, DCMI_D13, LCD_G5, EVENTOUT - - C11 C3 D14 133 155 D14 PI1 I/O FT - SPI2_SCK/I2S2_CK(7), FMC_D25, DCMI_D8, LCD_G6, EVENTOUT - - - B12 A1 PI2 I/O FT - TIM8_CH4, SPI2_MISO, I2S2ext_SD, FMC_D26, DCMI_D9, LCD_G7, EVENTOUT - - PI3 I/O FT - - D9 135 F9 VSS S - - - - - B5 C9 136 158 E10 VDD S - - - - A10 D4 A14 137 159 A14 PA14(JTCKSWCLK) I/O FT - JTCK-SWCLK, EVENTOUT - - JTDI, TIM2_CH1/TIM2_ETR, SPI1_NSS, SPI3_NSS/I2S3_WS, EVENTOUT - - SPI3_SCK/I2S3_CK, USART3_TX, UART4_TX, QUADSPI_BK1_IO1, SDIO_D2, DCMI_D8, LCD_R2, EVENTOUT - - I2S3ext_SD, SPI3_MISO, USART3_RX, UART4_RX, QUADSPI_BK2_NCS, SDIO_D3, DCMI_D4, EVENTOUT - B10 B2 78 - - - - 79 111 81 82 B11 113 C10 114 (2) 156 C14 C13 134 157 C13 - 112 NC TIM8_ETR, SPI2_MOSI/I2S2_SD, FMC_D27, DCMI_D10, EVENTOUT - 80 - B9 A2 D5 B3 - A13 138 160 A13 B14 139 161 B14 B13 140 162 B13 PA15(JTDI) PC10 PC11 I/O I/O I/O FT FT FT DocID028010 Rev 4 65/217 82 Pinouts and pin description STM32F479xx A9 C4 A12 141 163 A12 PC12 I/O FT - 84 116 C9 E6 B12 142 164 B12 PD0 I/O FT - CAN1_RX, FMC_D2, EVENTOUT - 85 117 C7 A3 C12 143 165 C12 PD1 I/O FT - CAN1_TX, FMC_D3, EVENTOUT - 86 118 B8 C5 D12 144 166 D12 PD2 I/O FT - TRACED2, TIM3_ETR, UART5_RX, SDIO_CMD, DCMI_D11, EVENTOUT - - LQFP208 115 LQFP176 83 TRACED3, SPI3_MOSI/I2S3_SD, USART3_CK, UART5_TX, SDIO_CK, DCMI_D9, EVENTOUT LQFP144 Alternate functions LQFP100 Notes Pin name (function after reset)(1) Pin types TFBGA216 UFBGA176 WLCSP168 UFBGA169 Pin number I/O structures Table 10. STM32F479xx pin and ball definitions (continued) Additional functions - 87 119 C8 D6 D11 145 167 C11 PD3 I/O FT - SPI2_SCK/I2S2_CK, USART2_CTS, FMC_CLK, DCMI_D5, LCD_G7, EVENTOUT 88 120 C6 B4 D10 146 168 D11 PD4 I/O FT - USART2_RTS, FMC_NOE, EVENTOUT - 89 121 B7 C6 C11 147 169 C10 PD5 I/O FT - USART2_TX, FMC_NWE, EVENTOUT - - 122 F8 A4 D8 148 170 F8 VSS S - - - - - 123 F7 - C8 149 171 E9 VDD S - - - - 90 124 D7 E7 B11 150 172 B11 PD6 I/O FT - SPI3_MOSI/I2S3_SD, SAI1_SD_A, USART2_RX, FMC_NWAIT, DCMI_D10, LCD_B2, EVENTOUT - 91 - A8 A5 A11 151 173 A11 PD7 I/O FT - USART2_CK, FMC_NE1, EVENTOUT - - - - - - - 174 B10 PJ12 I/O FT - LCD_G3, LCD_B0, EVENTOUT - - - - - - - 175 B9 PJ13 I/O FT - LCD_G4, LCD_B1, EVENTOUT - - - - - - - 176 C9 PJ14 I/O FT - LCD_B2, EVENTOUT - - - - - - - 177 D10 PJ15 I/O FT - LCD_B3, EVENTOUT - - 125 E6 D7 C10 152 178 D9 PG9 I/O FT - USART6_RX, QUADSPI_BK2_IO2, FMC_NE2/FMC_NCE, DCMI_VSYNC, EVENTOUT - - 126 E7 C7 B10 153 179 C8 PG10 I/O FT - LCD_G3, FMC_NE3, DCMI_D2, LCD_B2, EVENTOUT - - 127 B6 B6 B9 B8 PG11 I/O FT - ETH_MII_TX_EN/ETH_RMI I_TX_EN, DCMI_D3, LCD_B3, EVENTOUT - 66/217 154 180 DocID028010 Rev 4 STM32F479xx Pinouts and pin description - 128 - A6 A6 E8 B8 A8 155 181 156 182 C7 B3 PG12 PG13 Pin types TFBGA216 LQFP208 LQFP176 UFBGA176 WLCSP168 UFBGA169 A7 Pin name (function after reset)(1) I/O I/O FT FT Notes - LQFP144 LQFP100 Pin number I/O structures Table 10. STM32F479xx pin and ball definitions (continued) Alternate functions Additional functions - SPI6_MISO, USART6_RTS, LCD_B4, FMC_NE4, LCD_B1, EVENTOUT - - TRACED0, SPI6_SCK, USART6_CTS, ETH_MII_TXD0/ETH_RMII _TXD0, FMC_A24, LCD_R0, EVENTOUT - - - - - - A7 157 183 A4 PG14 I/O FT - TRACED1, SPI6_MOSI, USART6_TX, QUADSPI_BK2_IO3, ETH_MII_TXD1/ETH_RMII _TXD1, FMC_A25, LCD_B0, EVENTOUT - 129 - B7 D7 158 184 F7 VSS S - - - - - 130 - A7 C7 159 185 E8 VDD S - - - - - - - - - - 186 D8 PK3 I/O FT - LCD_B4, EVENTOUT - - - - - - - 187 D7 PK4 I/O FT - LCD_B5, EVENTOUT - - - - - - - 188 C6 PK5 I/O FT - LCD_B6, EVENTOUT - - - - - - - 189 C5 PK6 I/O FT - LCD_B7, EVENTOUT - - - - - - - 190 C4 PK7 I/O FT - LCD_DE, EVENTOUT - - 131 F6 D8 B7 160 191 B7 PG15 I/O FT - USART6_CTS, FMC_SDNCAS, DCMI_D13, EVENTOUT - - 92 132 B5 A8 A10 161 192 A10 93 133 D6 C8 A9 94 95 134 135 D5 C5 B8 G8 A6 B6 162 193 163 194 164 195 A9 A8 B6 PB3(JTDO/TRA CESWO) I/O FT - JTDO/TRACESWO, TIM2_CH2, SPI1_SCK, SPI3_SCK/I2S3_CK, EVENTOUT PB4(NJTRST) I/O FT - NJTRST, TIM3_CH1, SPI1_MISO, SPI3_MISO, I2S3ext_SD, EVENTOUT - - TIM3_CH2, I2C1_SMBA, SPI1_MOSI, SPI3_MOSI/I2S3_SD, CAN2_RX, OTG_HS_ULPI_D7, ETH_PPS_OUT, FMC_SDCKE1, DCMI_D10, LCD_G7, EVENTOUT - - TIM4_CH1, I2C1_SCL, USART1_TX, CAN2_TX, QUADSPI_BK1_NCS, FMC_SDNE1, DCMI_D5, EVENTOUT - PB5 PB6 I/O I/O FT FT DocID028010 Rev 4 67/217 82 Pinouts and pin description STM32F479xx Table 10. STM32F479xx pin and ball definitions (continued) LQFP144 UFBGA169 WLCSP168 UFBGA176 LQFP176 TFBGA216 Pin name (function after reset)(1) Pin types I/O structures Notes Alternate functions 96 136 B4 A9 B5 165 196 B5 PB7 I/O FT - TIM4_CH2, I2C1_SDA, USART1_RX, FMC_NL, DCMI_VSYNC, EVENTOUT - 97 137 A5 F8 D6 166 197 E6 BOOT0 I B - - VPP - TIM4_CH3, TIM10_CH1, I2C1_SCL, CAN1_RX, ETH_MII_TXD3, SDIO_D4, DCMI_D6, LCD_B6, EVENTOUT - - 98 138 D4 B9 A5 LQFP208 LQFP100 Pin number 167 198 A7 PB8 I/O FT Additional functions 139 C4 E9 B4 168 199 B4 PB9 I/O FT - TIM4_CH4, TIM11_CH1, I2C1_SDA, SPI2_NSS/I2S2_WS, CAN1_TX, SDIO_D5, DCMI_D7, LCD_B7, EVENTOUT 140 A4 A10 A4 169 200 A6 PE0 I/O FT - TIM4_ETR, UART8_Rx, FMC_NBL0, DCMI_D2, EVENTOUT - (2) 141 A3 C9 A3 170 201 A5 PE1 I/O FT - UART8_Tx, FMC_NBL1, DCMI_D3, EVENTOUT - - - E3 B10 D5 202 F6 VSS S - - - - - 142 C3 D9 C6 171 203 E5 PDR_ON S - - - - 100 143 D3 A11 C5 172 204 E7 VDD S - - - - 99 NC (2) NC - - - B3 D10 D4 173 205 C3 PI4 I/O FT - TIM8_BKIN, FMC_NBL2, DCMI_D5, LCD_B4, EVENTOUT - - - A2 C10 C4 174 206 D3 PI5 I/O FT - TIM8_CH1, FMC_NBL3, DCMI_VSYNC, LCD_B5, EVENTOUT - - - A1 B11 C3 175 207 D6 PI6 I/O FT - TIM8_CH2, FMC_D28, DCMI_D6, LCD_B6, EVENTOUT - - - B1 A12 C2 176 208 D4 PI7 I/O FT - TIM8_CH3, FMC_D29, DCMI_D7, LCD_B7, EVENTOUT - 1. Function availability depends on the chosen device. 2. NC (not-connected) pins are not bonded. They must be configured by software to output push-pull and forced to "0" in the output data register to avoid extra current consumption in low power modes. 3. PC13, PC14, PC15 and PI8 are supplied through the power switch. Since the switch only sinks a limited amount of current (3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited: - The speed should not exceed 2 MHz with a maximum load of 30 pF. - These I/Os must not be used as a current source (e.g. to drive an LED). 4. Main function after the first backup domain power-up. Later on, it depends on the contents of the RTC registers even after reset (because these registers are not reset by the main reset). For details on how to manage these I/Os, refer to the RTC register description sections in the STM32F4xx reference manual, available from the STMicroelectronics website: www.st.com. 5. FT = 5 V tolerant except when in analog mode or oscillator mode (for PC14, PC15, PH0 and PH1). 68/217 DocID028010 Rev 4 STM32F479xx Pinouts and pin description 6. If the device is delivered in an WLCSP168, UFBGA169, UFBGA176, LQFP176 or TFBGA216 package, and the BYPASS_REG pin is set to VDD (Regulator OFF/internal reset ON mode), then PA0 is used as an internal Reset (active low). 7. PI0 and PI1 cannot be used for I2S2 full-duplex mode. DocID028010 Rev 4 69/217 82 Pinouts and pin description STM32F479xx Table 11. FMC pin definition 70/217 Pin name NOR/PSRAM/SRAM NOR/PSRAM Mux NAND16 SDRAM PF0 A0 - - A0 PF1 A1 - - A1 PF2 A2 - - A2 PF3 A3 - - A3 PF4 A4 - - A4 PF5 A5 - - A5 PF12 A6 - - A6 PF13 A7 - - A7 PF14 A8 - - A8 PF15 A9 - - A9 PG0 A10 - - A10 PG1 A11 - - A11 PG2 A12 - - A12 PG3 A13 - - PG4 A14 - - BA0 PG5 A15 - - BA1 PD11 A16 A16 CLE - PD12 A17 A17 ALE - PD13 A18 A18 - - PE3 A19 A19 - - PE4 A20 A20 - - PE5 A21 A21 - - PE6 A22 A22 - - PE2 A23 A23 - - PG13 A24 A24 - - PG14 A25 A25 - - PD14 D0 DA0 D0 D0 PD15 D1 DA1 D1 D1 PD0 D2 DA2 D2 D2 PD1 D3 DA3 D3 D3 PE7 D4 DA4 D4 D4 PE8 D5 DA5 D5 D5 PE9 D6 DA6 D6 D6 PE10 D7 DA7 D7 D7 PE11 D8 DA8 D8 D8 DocID028010 Rev 4 STM32F479xx Pinouts and pin description Table 11. FMC pin definition (continued) Pin name NOR/PSRAM/SRAM NOR/PSRAM Mux NAND16 SDRAM PE12 D9 DA9 D9 D9 PE13 D10 DA10 D10 D10 PE14 D11 DA11 D11 D11 PE15 D12 DA12 D12 D12 PD8 D13 DA13 D13 D13 PD9 D14 DA14 D14 D14 PD10 D15 DA15 D15 D15 PH8 D16 - - D16 PH9 D17 - - D17 PH10 D18 - - D18 PH11 D19 - - D19 PH12 D20 - - D20 PH13 D21 - - D21 PH14 D22 - - D22 PH15 D23 - - D23 PI0 D24 - - D24 PI1 D25 - - D25 PI2 D26 - - D26 PI3 D27 - - D27 PI6 D28 - - D28 PI7 D29 - - D29 PI9 D30 - - D30 PI10 D31 - - D31 PD7 NE1 NE1 - - PG9 NE2 NE2 NCE - PG10 NE3 NE3 - - PG11 - - - - PG12 NE4 NE4 - - PD3 CLK CLK - - PD4 NOE NOE NOE - PD5 NWE NWE NWE - PD6 NWAIT NWAIT NWAIT - PB7 NADV NADV - - PF6 - - - - PF7 - - - - DocID028010 Rev 4 71/217 82 Pinouts and pin description STM32F479xx Table 11. FMC pin definition (continued) 72/217 Pin name NOR/PSRAM/SRAM NOR/PSRAM Mux NAND16 SDRAM PF8 - - - - PF9 - - - - PF10 - - - - PG6 - - - - PG7 - - INT - PE0 NBL0 NBL0 - NBL0 PE1 NBL1 NBL1 - NBL1 PI4 NBL2 - - NBL2 PI5 NBL3 - - NBL3 PG8 - - - SDCLK PC0 - - - SDNWE PF11 - - - SDNRAS PG15 - - - SDNCAS PH2 - - - SDCKE0 PH3 - - - SDNE0 PH6 - - - SDNE1 PH7 - - - SDCKE1 PH5 - - - SDNWE PC2 - - - SDNE0 PC3 - - - SDCKE0 PB5 - - - SDCKE1 PB6 - - - SDNE1 DocID028010 Rev 4 AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 SYS TIM1/2 TIM3/4/ 5 PA0 - TIM2_CH1/ TIM2_ETR PA1 - PA2 DocID028010 Rev 4 Port A AF9 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 TIM5_CH1 TIM8_ETR - - - USART2_ CTS UART4_ TX TIM2_CH2 TIM5_CH2 - - - - USART2_ RTS - TIM2_CH3 TIM5_CH3 TIM9_CH1 - - - PA3 - TIM2_CH4 TIM5_CH4 TIM9_CH2 - - PA4 - - - - - PA5 - TIM2_CH1/ TIM2_ETR - TIM8_CH1 N PA6 - TIM1_BKIN TIM3_CH1 PA7 - TIM1_ CH1N PA8 MCO1 PA9 AF10 AF12 AF13 AF14 AF15 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS - - ETH_MII_CRS - - - EVENT OUT UART4_ RX QUADSPI_ BK1_IO3 - ETH_MII_RX_ CLK/ETH_RMI I_REF_CLK - - LCD_R2 EVENT OUT USART2_T X - - - ETH_MDIO - - LCD_R1 EVENT OUT - USART2_ RX - LCD_B2 OTG_HS _ULPI_D0 ETH_MII_COL - - LCD_B5 EVENT OUT SPI1_NSS SPI3_NSS/ I2S3_WS USART2_ CK - - - - OTG_HS_S OF DCMI_HS YNC LCD_VSY NC EVENT OUT - SPI1_SCK - - - - OTG_HS _ULPI_C K - - - LCD_R4 EVENT OUT TIM8_BKI N - SPI1_ MISO - - - TIM13_CH1 - - - DCMI_PIX CLK LCD_G2 EVENT OUT TIM3_CH2 TIM8_CH1 N - SPI1_ MOSI - - - TIM14_CH1 QUADSPI _CLK ETH_MII_RX_ DV/ETH_RMII _CRS_DV FMC_SDN WE - - EVENT OUT TIM1_CH1 - - I2C3_SCL - - USART1_ CK - - OTG_FS_ SOF - - - LCD_R6 EVENT OUT - TIM1_CH2 - - I2C3_SMBA SPI2_SCK/I 2S2_CK - USART1_T X - - - - - DCMI_D0 - EVENT OUT PA10 - TIM1_CH3 - - - - - USART1_ RX - - OTG_FS_ ID - - DCMI_D1 - EVENT OUT PA11 - TIM1_CH4 - - - - - USART1_ CTS - CAN1_RX OTG_FS_ DM - - - LCD_R4 EVENT OUT PA12 - TIM1_ETR - - - - - USART1_ RTS - CAN1_TX OTG_FS_ DP - - - LCD_R5 EVENT OUT PA13 JTMSSWDIO - - - - - - - - - - - - - - EVENT OUT PA14 JTCKSWCLK - - - - - - - - - - - - - - EVENT OUT PA15 JTDI TIM2_CH1/ TIM2_ETR - - - SPI1_NSS SPI3_NSS/ I2S3_WS - - - - - - - - EVENT `OUT 73/217 Pinouts and pin description AF11 Port AF8 STM32F479xx Table 12. Alternate function AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 PB0 - TIM1_CH2N TIM3_CH3 TIM8_CH2 N - - - - - PB1 - TIM1_CH3N TIM3_CH4 TIM8_CH3 N - - - - PB2 - - - - - - - PB3 JTDO / TRACES WO TIM2_CH2 - - SPI1_SCK PB4 NJTRST - TIM3_CH1 - - PB5 - - TIM3_CH2 - PB6 - - TIM4_CH1 DocID028010 Rev 4 Port B PB7 - - PB8 - PB9 AF9 AF12 AF13 AF14 AF15 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS LCD_R3 OTG_HS _ULPI_D1 ETH_MII_ RXD2 - - LCD_G1 EVENT OUT - LCD_R6 OTG_HS _ULPI_D2 ETH_MII_ RXD3 - - LCD_G0 EVENT OUT - - - - - - - - EVENT OUT SPI3_SCK/ I2S3_CK - - - - - - - - EVENT OUT SPI1_MISO SPI3_MIS O I2S3ext _SD - - - - - - - EVENT OUT I2C1_SMBA SPI1_MOSI SPI3_MOS I/I2S3_SD - CAN2_RX OTG_HS _ULPI_D7 ETH_PPS OUT FMC_ SDCKE1 DCMI_D10 LCD_G7 EVENT OUT - I2C1_SCL - - USART1 _TX - CAN2_TX QUADSPI _BK1_NC S - FMC_ SDNE1 DCMI_D5 EVENT OUT TIM4_CH2 - I2C1_SDA - - USART1_ RX - - - - FMC_NL DCMI_VS YNC EVENT OUT - TIM4_CH3 TIM10_CH 1 I2C1_SCL - - - - CAN1_RX - ETH_MII_ TXD3 SDIO_D4 DCMI_D6 LCD_B6 EVENT OUT - - TIM4_CH4 TIM11_CH 1 I2C1_SDA SPI2_NSS/I 2S2_WS - - - CAN1_TX - - SDIO_D5 DCMI_D7 LCD_B7 EVENT OUT PB10 - TIM2_CH3 - - I2C2_SCL SPI2_SCK/I 2S2_CK - USART3 _TX - QUADSPI_ BK1_NCS OTG_HS _ULPI_D3 ETH_MII_RX_ ER - - LCD_G4 EVENT OUT PB11 - TIM2_CH4 - - I2C2_SDA - USART3 _RX - OTG_HS _ULPI_D4 ETH_MII_TX_ EN/ETH_RMII _TX_EN - DSIHOST_ TE LCD_G5 EVENT OUT PB12 - TIM1_BKIN - - I2C2_SMBA SPI2_NSS/I 2S2_WS - USART3 _CK - CAN2_RX OTG_HS _ULPI_D5 ETH_MII_TXD 0/ETH_RMII_T XD0 OTG_HS_ ID - - EVENT OUT PB13 - TIM1_CH1N - - - SPI2_SCK/I 2S2_CK - USART3 _CTS - CAN2_TX OTG_HS _ULPI_D6 ETH_MII_TXD 1/ETH_RMII_T XD1 - - - EVENT OUT PB14 - TIM1_CH2N - TIM8_CH2 N - SPI2_MISO I2S2ext_S D USART3 _RTS - TIM12_CH1 - - OTG_HS_ `DM - - EVENT OUT PB15 RTC _REFIN TIM1_CH3N - TIM8_CH3 N - SPI2_MOSI /I2S2_SD - - - TIM12_CH2 - - OTG_HS_ DP - - EVENT `OUT USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 STM32F479xx AF11 Port AF8 Pinouts and pin description 74/217 Table 12. Alternate function (continued) AF0 AF1 AF2 AF3 AF5 AF6 AF7 AF11 AF12 AF13 AF14 AF15 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS PC0 - - - - - - - - - - OTG_HS _ULPI_ST P - FMC_SDN WE - LCD_R5 EVENT OUT PC1 TRACE D0 - - - - SPI2_MOSI /I2S2_SD SAI1_SD_ A - - - ETH_MDC - - - EVENT OUT PC2 - - - - - SPI2_MISO I2S2ext_S D - - - OTG_HS _ULPI_DI R ETH_MII_TXD 2 FMC_SDN E0 - - EVENT OUT PC3 - - - - - SPI2_MOSI /I2S2_SD - - - - OTG_HS _ULPI_N XT ETH_MII_TX_ CLK FMC_SDC KE0 - - EVENT OUT PC4 - - - - - - - - - - - ETH_MII_RXD 0/ETH_RMII_R XD0 FMC_SDN E0 - - EVENT OUT PC5 - - - - - - - - - - - ETH_MII_RXD 1/ETH_RMII_R XD1 FMC_SDC KE0 - - EVENT OUT PC6 - - TIM3_CH1 TIM8_CH1 - I2S2_MCK - - USART6 _TX - - - SDIO_D6 DCMI_D0 LCD_HSY NC EVENT OUT PC7 - - TIM3_CH2 TIM8_CH2 - - I2S3_MCK - USART6 _RX - - - SDIO_D7 DCMI_D1 LCD_G6 EVENT OUT PC8 TRACE D1 - TIM3_CH3 TIM8_CH3 - - - - USART6 _CK - - - SDIO_D0 DCMI_D2 - EVENT OUT PC9 MCO2 - TIM3_CH4 TIM8_CH4 I2C3_SDA I2S_CKIN - - - QUADSPI_ BK1_IO0 - - SDIO_D1 DCMI_D3 - EVENT OUT PC10 - - - - - - SPI3_SCK/ I2S3_CK USART3_ TX UART4_ TX QUADSPI_ BK1_IO1 - - SDIO_D2 DCMI_D8 LCD_R2 EVENT OUT PC11 - - - - - I2S3ext_SD SPI3_MIS O USART3_ RX UART4_ RX QUADSPI_ BK2_NCS - - SDIO_D3 DCMI_D4 - EVENT OUT PC12 TRACE D3 - - - - - SPI3_MOS I/I2S3_SD USART3_ CK UART5_ TX - - - SDIO_CK DCMI_D9 - EVENT OUT PC13 - - - - - - - - - - - - - - - EVENT OUT PC14 - - - - - - - - - - - - - - - EVENT OUT PC15 - - - - - - - - - - - - - - - EVENT `OUT Port DocID028010 Rev 4 Port C AF8 AF9 USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 75/217 Pinouts and pin description AF4 STM32F479xx Table 12. Alternate function (continued) AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 PD0 - - - - - - - - - PD1 - - - - - - - - PD2 TRACE D2 - TIM3_ETR - - - - PD3 - - - - - SPI2_SCK/I 2S2_CK PD4 - - - - - PD5 - - - - PD6 - - - AF12 AF13 AF14 AF15 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS CAN1_RX - - FMC_D2 - - EVENT OUT - CAN1_TX - - FMC_D3 - - EVENT OUT - UART5_ RX - - - SDIO_CMD DCMI_D11 - EVENT OUT - USART2_ CTS - - - - FMC_CLK DCMI_D5 LCD_G7 EVENT OUT - - USART2_ RTS - - - - FMC_NOE - - EVENT OUT - - - USART2_T X - - - - FMC_NWE - - EVENT OUT - - SPI3_MOSI /I2S3_SD SAI1_SD_ A USART2_ RX - - - - FMC_NWAI T DCMI_D10 LCD_B2 EVENT OUT PD7 - - - - - - - USART2_ CK - - - - FMC_NE1 - - EVENT OUT PD8 - - - - - - - USART3_T X - - - - FMC_D13 - - EVENT OUT PD9 - - - - - - - USART3_ RX - - - - FMC_D14 - - EVENT OUT PD10 - - - - - - - USART3_ CK - - - - FMC_D15 - LCD_B3 EVENT OUT PD11 - - - - - - - USART3_ CTS - QUADSPI_ BK1_IO0 - - FMC_A16/F MC_CLE - - EVENT OUT PD12 - - TIM4_CH1 - - - - USART3_ RTS - QUADSPI_ BK1_IO1 - - FMC_A17/F MC_ALE - - EVENT OUT PD13 - - TIM4_CH2 - - - - - - QUADSPI_ BK1_IO3 - - FMC_A18 - - EVENT OUT PD14 - - TIM4_CH3 - - - - - - - - - FMC_D0 - - EVENT OUT PD15 - - TIM4_CH4 - - - - - - - - - FMC_D1 - - EVENT `OUT DocID028010 Rev 4 Port D AF9 USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 STM32F479xx AF11 Port AF8 Pinouts and pin description 76/217 Table 12. Alternate function (continued) AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 PE0 - - TIM4_ETR - - - - - UART8_ Rx PE1 - - - - - - - - PE2 TRACE CLK - - - - SPI4_SCK SAI1_ MCLK_A PE3 TRACE D0 - - - - - PE4 TRACE D1 - - - - PE5 TRACE D2 - - TIM9_CH1 PE6 TRACE D3 - - AF12 AF13 AF14 AF15 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS - - - FMC_NBL0 DCMI_D2 - EVENT OUT UART8_ Tx - - - FMC_NBL1 DCMI_D3 - EVENT OUT - - QUADSPI_ BK1_IO2 - ETH_MII_TXD 3 FMC_A23 - - EVENT OUT SAI1 _SD_B - - - - - FMC_A19 - - EVENT OUT SPI4_NSS SAI1 _FS_A - - - - - FMC_A20 DCMI_D4 LCD_B0 EVENT OUT - SPI4_MISO SAI1 _SCK_A - - - - - FMC_A21 DCMI_D6 LCD_G0 EVENT OUT TIM9_CH2 - SPI4_MOSI SAI1 _SD_A - - - - - FMC_A22 DCMI_D7 LCD_G1 EVENT OUT PE7 - TIM1_ETR - - - - - - UART7_ Rx - QUADSPI _BK2_IO0 - FMC_D4 - - EVENT OUT PE8 - TIM1_CH1N - - - - - - UART7_ Tx - QUADSPI _BK2_IO1 - FMC_D5 - - EVENT OUT PE9 - TIM1_CH1 - - - - - - - - QUADSPI _BK2_IO2 - FMC_D6 - - EVENT OUT PE10 - TIM1_CH2N - - - - - - - - QUADSPI _BK2_IO3 - FMC_D7 - - EVENT OUT PE11 - TIM1_CH2 - - - SPI4_NSS - - - - - - FMC_D8 - LCD_G3 EVENT OUT PE12 - TIM1_CH3N - - - SPI4_SCK - - - - - - FMC_D9 - LCD_B4 EVENT OUT PE13 - TIM1_CH3 - - - SPI4_MISO - - - - - - FMC_D10 - LCD_DE EVENT OUT PE14 - TIM1_CH4 - - - SPI4_MOSI - - - - - - FMC_D11 - LCD_CLK EVENT OUT PE15 - TIM1_BKIN - - - - - - - - - - FMC_D12 - LCD_R7 EVENT `OUT DocID028010 Rev 4 Port E AF9 USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 77/217 Pinouts and pin description AF11 Port AF8 STM32F479xx Table 12. Alternate function (continued) AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 PF0 - - - - I2C2_SDA - - - - PF1 - - - - I2C2_SCL - - - PF2 - - - - I2C2_SMBA - - PF3 - - - - - - PF4 - - - - - PF5 - - - - PF6 - - - AF12 AF13 AF14 AF15 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS - - - FMC_A0 - - EVENT OUT - - - - FMC_A1 - - EVENT OUT - - - - - FMC_A2 - - EVENT OUT - - - - - - FMC_A3 - - EVENT OUT - - - - - - - FMC_A4 - - EVENT OUT - - - - - - - - FMC_A5 - - EVENT OUT TIM10_CH 1 - SPI5_NSS SAI1_ SD_B - UART7_ Rx QUADSPI_ BK1_IO3 - - - - - EVENT OUT PF7 - - - TIM11_CH 1 - SPI5_SCK SAI1_ MCLK_B - UART7_ Tx QUADSPI_ BK1_IO2 - - - - - EVENT OUT PF8 - - - - - SPI5_MISO SAI1_ SCK_B - - TIM13_CH1 QUADSPI _BK1_IO0 - - - - EVENT OUT PF9 - - - - - SPI5_MOSI SAI1_ FS_B - - TIM14_CH1 QUADSPI _BK1_IO1 - - - - EVENT OUT PF10 - - - - - - - - - QUADSPI_ CLK - - DCMI_D11 LCD_DE EVENT OUT PF11 - - - - - SPI5_MOSI - - - - - - FMC_SDN RAS DCMI_D12 - EVENT OUT PF12 - - - - - - - - - - - - FMC_A6 - - EVENT OUT PF13 - - - - - - - - - - - - FMC_A7 - - EVENT OUT PF14 - - - - - - - - - - - - FMC_A8 - - EVENT OUT PF15 - - - - - - - - - - - - FMC_A9 - - EVENT `OUT DocID028010 Rev 4 Port F AF9 USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 STM32F479xx AF11 Port AF8 Pinouts and pin description 78/217 Table 12. Alternate function (continued) AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF11 AF12 AF13 AF14 AF15 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS PG0 - - - - - - - - - - - - FMC_A10 - - EVENT OUT PG1 - - - - - - - - - - - - FMC_A11 - - EVENT OUT PG2 - - - - - - - - - - - - FMC_A12 - - EVENT OUT PG3 - - - - - - - - - - - - FMC_A13 - - EVENT OUT PG4 - - - - - - - - - - - - FMC_A14/F MC_BA0 - - EVENT OUT PG5 - - - - - - - - - - - - FMC_A15/F MC_BA1 - - EVENT OUT PG6 - - - - - - - - - - - - DCMI_D12 LCD_R7 EVENT OUT PG7 - - - - - USART6 _CK - - - FMC_INT DCMI_D13 LCD_CLK EVENT OUT PG8 - - - - - SPI6_NSS - - USART6 _RTS - - ETH_PPS_OU T FMC_SDCL K LCD_G7 EVENT OUT PG9 - - - - - - - - USART6 _RX QUADSPI_ BK2_IO2 - - FMC_NE2/ FMC_NCE DCMI_VS YNC PG10 - - - - - - - - LCD_G3 - - FMC_NE3 DCMI_D2 LCD_B2 EVENT OUT PG11 - - - - - - - - - - - ETH_MII _TX_EN / ETH_RMII _TX_EN - DCMI_D3 LCD_B3 EVENT OUT PG12 - - - - - SPI6_MISO - - USART6 _RTS LCD_B4 - - FMC_NE4 - LCD_B1 EVENT OUT PG13 TRACE D0 - - - - SPI6_SCK - - USART6 _CTS - - ETH_MII _TXD0 / ETH_RMII _TXD0 FMC_A24 - LCD_R0 EVENT OUT PG14 TRACE D1 - - - - SPI6_MOSI - - USART6 _TX QUADSPI_ BK2_IO3 - ETH_MII _TXD1 / ETH_RMII _TXD1 FMC_A25 - LCD_B0 EVENT OUT PG15 - - - - - - - - USART6 _CTS - - - FMC_ SDNCAS DCMI_D13 - EVENT `OUT Port DocID028010 Rev 4 SAI1 _MCLK_A Port G AF8 AF9 USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 STM32F479xx Table 12. Alternate function (continued) EVENT OUT Pinouts and pin description 79/217 AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 PH0 - - - - - - - - - PH1 - - - - - - - - PH2 - - - - - - - PH3 - - - - - - PH4 - - - - I2C2_SCL PH5 - - - - PH6 - - - DocID028010 Rev 4 Port H PH7 - - PH8 - PH9 AF9 AF12 AF13 AF14 AF15 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS - - - - - - EVENT OUT - - - - - - - - QUADSPI_ BK2_IO0 - ETH_MII_CRS FMC_SDC KE0 - LCD_R0 EVENT OUT - - - QUADSPI_ BK2_IO1 - ETH_MII_COL FMC_SDN E0 - LCD_R1 EVENT OUT - - - - LCD_G5 OTG_HS _ULPI_N XT - - - LCD_G4 EVENT OUT I2C2_SDA SPI5_NSS - - - - - - FMC_SDN WE - - EVENT OUT - I2C2_SMBA SPI5_SCK - - - TIM12_CH1 - ETH_MII_RXD 2 FMC_SDN E1 - - EVENT OUT - - I2C3_SCL SPI5_MISO - - - - - ETH_MII_RXD 3 FMC_SDC KE1 DCMI_D9 - EVENT OUT - - - I2C3_SDA - - - - - - - FMC_D16 DCMI_HS YNC LCD_R2 EVENT OUT - - - - I2C3_SMBA - - - - TIM12_CH2 - - FMC_D17 DCMI_D0 LCD_R3 EVENT OUT PH10 - - TIM5_CH1 - - - - - - - - - FMC_D18 DCMI_D1 LCD_R4 EVENT OUT PH11 - - TIM5_CH2 - - - - - - - - - FMC_D19 DCMI_D2 LCD_R5 EVENT OUT PH12 - - TIM5_CH3 - - - - - - - - - FMC_D20 DCMI_D3 LCD_R6 EVENT OUT PH13 - - - TIM8_CH1 N - - - - - CAN1_TX - - FMC_D21 - LCD_G2 EVENT OUT PH14 - - - TIM8_CH2 N - - - - - - - - FMC_D22 DCMI_D4 LCD_G3 EVENT OUT PH15 - - - TIM8_CH3 N - - - - - - - - FMC_D23 DCMI_D11 LCD_G4 EVENT `OUT USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 EVENT OUT STM32F479xx AF11 Port AF8 Pinouts and pin description 80/217 Table 12. Alternate function (continued) AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF11 AF12 AF13 AF14 AF15 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS PI0 - - TIM5_CH4 - - SPI2_NSS/I 2S2_WS - - - - - - FMC_D24 DCMI_D13 LCD_G5 EVENT OUT PI1 - - - - - SPI2_SCK/I 2S2_CK - - - - - - FMC_D25 DCMI_D8 LCD_G6 EVENT OUT PI2 - - - TIM8_CH4 - SPI2_MISO I2S2ext_S D - - - - - FMC_D26 DCMI_D9 LCD_G7 EVENT OUT PI3 - - - TIM8_ETR - SPI2_MOSI /I2S2_SD - - - - - - FMC_D27 DCMI_D10 PI4 - - - TIM8_BKI N - - - - - - - - FMC_NBL2 DCMI_D5 LCD_B4 EVENT OUT PI5 - - - TIM8_CH1 - - - - - - - - FMC_NBL3 DCMI_VS YNC LCD_B5 EVENT OUT PI6 - - - TIM8_CH2 - - - - - - - - FMC_D28 DCMI_D6 LCD_B6 EVENT OUT PI7 - - - TIM8_CH3 - - - - - - - - FMC_D29 DCMI_D7 LCD_B7 EVENT OUT PI8 - - - - - - - - - - - - - - PI9 - - - - - - - - - CAN1_RX - - FMC_D30 - LCD_VSY NC EVENT OUT PI10 - - - - - - - - - - - ETH_MII_RX_ ER FMC_D31 - LCD_HSY NC EVENT OUT PI11 - - - - - - - - - LCD_G6 OTG_HS _ULPI _DIR - - - - EVENT OUT PI12 - - - - - - - - - - - - - - LCD_HSY NC EVENT OUT PI13 - - - - - - - - - - - - - - LCD_VSY NC EVENT OUT PI14 - - - - - - - - - - - - - - LCD_CLK EVENT OUT PI15 - - - - - - - - - LCD_G2 - - - - LCD_R0 EVENT `OUT Port AF8 AF9 USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 STM32F479xx Table 12. Alternate function (continued) EVENT OUT DocID028010 Rev 4 Port I EVENT OUT Pinouts and pin description 81/217 AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 SYS TIM1/2 TIM3/4/ 5 TIM8/9/ 10/11 I2C1/2/3 SPI1/2/3 /4/5/6 SPI2/3/ SAI1 SPI2/3/ USART 1/2/3 PJ0 - - - - - - - - - PJ1 - - - - - - - - PJ2 - - - - - - - PJ3 - - - - - - PJ4 - - - - - PJ5 - - - - PJ12 - - - PJ13 - - PJ14 - PJ15 AF9 AF12 AF13 AF14 AF15 QUAD SPI/OT G2_HS /OTG1 _FS ETH FMC/ SDIO/ OTG2_ FS DCMI/ DSI HOST LCD SYS LCD_R7 - - - - LCD_R1 EVENT OUT - - - - - - LCD_R2 EVENT OUT - - - - - - DSIHOST _TE LCD_R3 EVENT OUT - - - - - - - - LCD_R4 EVENT OUT - - - - - - - - - LCD_R5 EVENT OUT - - - - - - - - - - LCD_R6 EVENT OUT - - - - - - LCD_G3 - - - - LCD_B0 EVENT OUT - - - - - - - LCD_G4 - - - - LCD_B1 EVENT OUT - - - - - - - - - - - - - LCD_B2 EVENT OUT - - - - - - - - - - - - - - LCD_B3 EVENT OUT PK3 - - - - - - - - - - - - - - LCD_B4 EVENT OUT PK4 - - - - - - - - - - - - - - LCD_B5 EVENT OUT PK5 - - - - - - - - - - - - - - LCD_B6 EVENT OUT PK6 - - - - - - - - - - - - - - LCD_B7 EVENT OUT PK7 - - - - - - - - - - - - - - LCD_DE EVENT OUT USAR CAN1/2/ TIM12/ T6/ 13/14/ UART QUAD 4/5/7/ SPI/LCD 8 AF10 DocID028010 Rev 4 Port J Port K STM32F479xx AF11 Port AF8 Pinouts and pin description 82/217 Table 12. Alternate function (continued) STM32F479xx 4 Memory mapping Memory mapping The memory map is shown in Figure 21. Figure 21. Memory map [)))))))) [( ['))))))) 5HVHUYHG [([)))))))) &RUWH[0 LQWHUQDOSHULSKHUDO [([())))) $+% [['))))))) 5HVHUYHG [&[))))))) [%)) $+% 0E\WH %ORFN &RUWH[ ,QWHUQDO SHULSKHUDOV [ 5HVHUYHG [[))))))) [)))) 0E\WH %ORFN )0& [' [&))))))) $+% 0E\WH %ORFN )0&DQG 48$'63, [$ [))))))) 0E\WH %ORFN )0&EDQNDQG 48$'63,EDQN [ [))))))) [ 5HVHUYHG [[)))) [)) 0E\WH %ORFN )0&EDQNWR 48$'63,EDQN [ [))))))) 0E\WH %ORFN 3HULSKHUDOV $3% [ [))))))) 0E\WH %ORFN 65$0 [ [))))))) 0E\WH %ORFN 65$0 [ 5HVHUYHG [[))))))) 65$0 .%DOLDVHGE\ELWEDQGLQJ 65$0 .%DOLDVHGE\ELWEDQGLQJ [[)))) [[)))) 65$0 .%DOLDVHGE\ELWEDQGLQJ [[))) 5HVHUYHG [)))&[))))))) 2SWLRQ%\WHV 5HVHUYHG 6\VWHPPHPRU\ 5HVHUYHG 2SWLRQE\WHV [)))&[)))& ) [)))$[)))))) [)))[)))$) [))(&[))()))) [))(&[))(& ) 5HVHUYHG &&0GDWD5$0 .%GDWD65$0 5HVHUYHG 5HVHUYHG [ [[)))) [))) $3% [[))(%))) [[)))) [[))))))) )ODVKPHPRU\ 5HVHUYHG $OLDVHGWR)ODVKV\VWHP PHPRU\RU65$0GHSHQGLQJ RQWKH%227SLQV [[))))) [[)))))) [ [[))))) 06Y9 DocID028010 Rev 4 83/217 87 Memory mapping STM32F479xx Table 13. STM32F479xx register boundary addresses(1) Bus Boundary address - 0xE00F FFFF - 0xFFFF FFFF Reserved 0xE000 0000 - 0xE00F FFFF Cortex(R)-M4 internal peripherals 0xD000 0000 - 0xDFFF FFFF FMC bank 6 0xC000 0000 - 0xCFFF FFFF FMC bank 5 (R) Cortex -M4 AHB3 - AHB2 84/217 Peripheral 0xA000 1000 - 0xA0001FFF Quad-SPI control register 0xA000 2000 - 0xBFFF FFFF Reserved 0xA000 0000- 0xA000 0FFF FMC control register 0x9000 0000 - 0x9FFF FFFF Quad-SPI bank 0x8000 0000 - 0x8FFF FFFF FMC bank 3 0x7000 0000 - 0x7FFF FFFF FMC bank 2 (reserved) 0x6000 0000 - 0x6FFF FFFF FMC bank 1 0x5006 0C00- 0x5FFF FFFF Reserved 0x5006 0800 - 0x5006 0BFF RNG 0x5006 0400 - 0x5006 07FF HASH 0x5006 0000 - 0x5006 03FF CRYP 0x5005 0400 - 0x5005 FFFF Reserved 0x5005 0000 - 0x5005 03FF DCMI 0x5004 0000- 0x5004 FFFF Reserved 0x5000 0000 - 0x5003 FFFF USB OTG FS DocID028010 Rev 4 STM32F479xx Memory mapping Table 13. STM32F479xx register boundary addresses(1) (continued) Bus Boundary address Peripheral - 0x4008 0000- 0x4FFF FFFF Reserved 0x4004 0000 - 0x4007 FFFF USB OTG HS 0x4002 BC00- 0x4003 FFFF Reserved 0x4002 B000 - 0x4002 BBFF Chrom (DMA2D) 0x4002 9400 - 0x4002 AFFF Reserved 0x4002 9000 - 0x4002 93FF 0x4002 8C00 - 0x4002 8FFF 0x4002 8800 - 0x4002 8BFF ETHERNET MAC 0x4002 8400 - 0x4002 87FF 0x4002 8000 - 0x4002 83FF AHB1 0x4002 6800 - 0x4002 7FFF Reserved 0x4002 6400 - 0x4002 67FF DMA2 0x4002 6000 - 0x4002 63FF DMA1 0x4002 5000 - 0x4002 5FFF Reserved 0x4002 4000 - 0x4002 4FFF BKPSRAM 0x4002 3C00 - 0x4002 3FFF Flash interface register 0x4002 3800 - 0x4002 3BFF RCC 0x4002 3400 - 0x4002 37FF Reserved 0x4002 3000 - 0x4002 33FF CRC 0x4002 2C00 - 0x4002 2FFF Reserved 0x4002 2800 - 0x4002 2BFF GPIOK 0x4002 2400 - 0x4002 27FF GPIOJ 0x4002 2000 - 0x4002 23FF GPIOI 0x4002 1C00 - 0x4002 1FFF GPIOH 0x4002 1800 - 0x4002 1BFF GPIOG 0x4002 1400 - 0x4002 17FF GPIOF 0x4002 1000 - 0x4002 13FF GPIOE 0x4002 0C00 - 0x4002 0FFF GPIOD 0x4002 0800 - 0x4002 0BFF GPIOC 0x4002 0400 - 0x4002 07FF GPIOB 0x4002 0000 - 0x4002 03FF GPIOA DocID028010 Rev 4 85/217 87 Memory mapping STM32F479xx Table 13. STM32F479xx register boundary addresses(1) (continued) Bus APB2 86/217 Boundary address Peripheral 0x4001 7400 - 0x4001 FFFF Reserved 0x4001 6C00 - 0x4001 73FF DSI Host 0x4001 6800 - 0x4001 6BFF LCD-TFT 0x4001 5C00 - 0x4001 67FF Reserved 0x4001 5800 - 0x4001 5BFF SAI1 0x4001 5400 - 0x4001 57FF SPI6 0x4001 5000 - 0x4001 53FF SPI5 0x4001 4C00 - 0x4001 4FFF Reserved 0x4001 4800 - 0x4001 4BFF TIM11 0x4001 4400 - 0x4001 47FF TIM10 0x4001 4000 - 0x4001 43FF TIM9 0x4001 3C00 - 0x4001 3FFF EXTI 0x4001 3800 - 0x4001 3BFF SYSCFG 0x4001 3400 - 0x4001 37FF SPI4 0x4001 3000 - 0x4001 33FF SPI1 0x4001 2C00 - 0x4001 2FFF SDIO 0x4001 2400 - 0x4001 2BFF Reserved 0x4001 2000 - 0x4001 23FF ADC1 - ADC2 - ADC3 0x4001 1800 - 0x4001 1FFF Reserved 0x4001 1400 - 0x4001 17FF USART6 0x4001 1000 - 0x4001 13FF USART1 0x4001 0800 - 0x4001 0FFF Reserved 0x4001 0400 - 0x4001 07FF TIM8 0x4001 0000 - 0x4001 03FF TIM1 DocID028010 Rev 4 STM32F479xx Memory mapping Table 13. STM32F479xx register boundary addresses(1) (continued) Bus Boundary address - 0x4000 8000- 0x4000 FFFF Reserved 0x4000 7C00 - 0x4000 7FFF UART8 0x4000 7800 - 0x4000 7BFF UART7 0x4000 7400 - 0x4000 77FF DAC 0x4000 7000 - 0x4000 73FF PWR 0x4000 6C00 - 0x4000 6FFF Reserved 0x4000 6800 - 0x4000 6BFF CAN2 0x4000 6400 - 0x4000 67FF CAN1 0x4000 6000 - 0x4000 63FF Reserved 0x4000 5C00 - 0x4000 5FFF I2C3 0x4000 5800 - 0x4000 5BFF I2C2 0x4000 5400 - 0x4000 57FF I2C1 0x4000 5000 - 0x4000 53FF UART5 0x4000 4C00 - 0x4000 4FFF UART4 0x4000 4800 - 0x4000 4BFF USART3 0x4000 4400 - 0x4000 47FF USART2 0x4000 4000 - 0x4000 43FF I2S3ext 0x4000 3C00 - 0x4000 3FFF SPI3 / I2S3 0x4000 3800 - 0x4000 3BFF SPI2 / I2S2 0x4000 3400 - 0x4000 37FF I2S2ext 0x4000 3000 - 0x4000 33FF IWDG 0x4000 2C00 - 0x4000 2FFF WWDG 0x4000 2800 - 0x4000 2BFF RTC & BKP Registers 0x4000 2400 - 0x4000 27FF Reserved 0x4000 2000 - 0x4000 23FF TIM14 0x4000 1C00 - 0x4000 1FFF TIM13 0x4000 1800 - 0x4000 1BFF TIM12 0x4000 1400 - 0x4000 17FF TIM7 0x4000 1000 - 0x4000 13FF TIM6 0x4000 0C00 - 0x4000 0FFF TIM5 0x4000 0800 - 0x4000 0BFF TIM4 0x4000 0400 - 0x4000 07FF TIM3 0x4000 0000 - 0x4000 03FF TIM2 APB1 Peripheral 1. The reserved boundary address are shown in grayed cells DocID028010 Rev 4 87/217 87 Electrical characteristics 5 5.1 STM32F479xx Electrical characteristics Parameter conditions Unless otherwise specified, all voltages are referenced to VSS. 5.1.1 Minimum and maximum values Unless otherwise specified the minimum and maximum values are guaranteed in the worst conditions of ambient temperature, supply voltage and frequencies by tests in production on 100% of the devices with an ambient temperature at TA = 25 C and TA = TAmax (given by the selected temperature range). Data based on characterization results, design simulation and/or technology characteristics are indicated in the table footnotes and are not tested in production. Based on characterization, the minimum and maximum values refer to sample tests and represent the mean value plus or minus three times the standard deviation (mean3). 5.1.2 Typical values Unless otherwise specified, typical data are based on TA = 25 C, VDD = 3.3 V (for the 1.7 V VDD 3.6 V voltage range). They are given only as design guidelines and are not tested. Typical ADC accuracy values are determined by characterization of a batch of samples from a standard diffusion lot over the full temperature range, where 95% of the devices have an error less than or equal to the value indicated (mean2). 5.1.3 Typical curves Unless otherwise specified, all typical curves are given only as design guidelines and are not tested. 5.1.4 Loading capacitor The loading conditions used for pin parameter measurement are shown in Figure 22. 5.1.5 Pin input voltage The input voltage measurement on a pin of the device is described in Figure 23. Figure 22. Pin loading conditions Figure 23. Pin input voltage -#5 PIN -#5 PIN # P& 6). -36 88/217 DocID028010 Rev 4 -36 STM32F479xx 5.1.6 Electrical characteristics Power supply scheme Figure 24. Power supply scheme 9%$7 287 *3,2V i) 9&$3B 9&$3B 9'' 966 iQ) i) %<3$66B5(* 9''86% 9''86% ,1 Q) 9'''6, 9&$3'6, .HUQHOORJLF &38GLJLWDO 5$0 )ODVKPHPRU\ 27*)6 3+< '6, 9ROWDJH UHJXODWRU '6, 3+< 966'6, 3'5B21 9'' 5HVHW FRQWUROOHU 9''$ 95() Q) ) ,2 /RJLF 9ROWDJH UHJXODWRU 9'''6, ) /HYHOVKLIWHU 9%$7 WR9 9'' %DFNXSFLUFXLWU\ 26&.57& :DNHXSORJLF %DFNXSUHJLVWHUV EDFNXS5$0 3RZHU VZLWFK Q) ) 95() 95() $'& $QDORJ 5&V3// 966$ 069 1. To connect BYPASS_REG and PDR_ON pins, refer to Section 2.19 and Section 2.20. 2. The two 2.2 F ceramic capacitors on VCAP_1 and VCAP_2 should be replaced by two 100 nF decoupling capacitors when the voltage regulator is OFF. 3. The 4.7 F ceramic capacitor must be connected to one of the VDD pin. 4. VDDA and VSSA must be connected to VDD and VSS, respectively. Caution: Each power supply pair (VDD/VSS, VDDA/VSSA ...) must be decoupled with filtering ceramic capacitors as shown above. These capacitors must be placed as close as possible to, or below, the appropriate pins on the underside of the PCB to ensure good operation of the device. It is not recommended to remove filtering capacitors to reduce PCB size or cost. This might cause incorrect operation of the device. DocID028010 Rev 4 89/217 190 Electrical characteristics 5.1.7 STM32F479xx Current consumption measurement Figure 25. Current consumption measurement scheme ,''B9%$7 9%$7 ,'' 9'' 9''$ DL 5.2 Absolute maximum ratings Stresses above the absolute maximum ratings listed in Table 14, Table 15, and Table 16 may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 14. Voltage characteristics Symbol VDD-VSS VIN Ratings Min Max - 0.3 4.0 Input voltage on FT pins(2) VSS - 0.3 VDD+4.0 Input voltage on TTa pins VSS - 0.3 4.0 Input voltage on any other pin VSS - 0.3 4.0 VSS 9.0 - 50 - 50 External main supply voltage (including VDDA, VDD, VDDUSB, VDDDSI and VBAT)(1) Input voltage on BOOT pin |VDDx| Variations between different VDD power pins pins(3) |VSSX -VSS| Variations between all the different ground VESD(HBM) Electrostatic discharge voltage (human body model) Unit see Section 5.3.18 1. All main power (VDD, VDDA, VDDUSB, VDDDSI) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the permitted range. 2. VIN maximum value must always be respected. Refer to Table 15 for the values of the maximum allowed injected current. 3. Including VREF- pin 90/217 DocID028010 Rev 4 V mV STM32F479xx Electrical characteristics Table 15. Current characteristics Symbol Ratings Max. IVDD Total current into sum of all VDD_x power lines (source)(1) IVSS (1) 290 - 290 Total current out of sum of all VSS_x ground lines (sink) IVDDUSB Total current into VDDUSB power line (source) 25 IVDD Maximum current into each VDD_x power line (source)(1) IVSS (1) Maximum current out of each VSS_x ground line (sink) 100 - 100 Output current sunk by any I/O and control pin IIO IIO 25 Output current sourced by any I/Os and control pin - 25 Total output current sunk by sum of all I/O and control pins (2) 120 Total output current sunk by sum of all USB I/Os 25 Total output current sourced by sum of all I/Os and control Injected current on FT pins IINJ(PIN) (3) pins(2) IINJ(PIN) mA - 120 (4) - 5/+0 Injected current on NRST and BOOT0 pins (4) Injected current on TTa pins(5) (5) Unit Total injected current (sum of all I/O and control 5 pins)(6) 25 1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the permitted range. 2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages. 3. Negative injection disturbs the analog performance of the device. See note in Section 5.3.24. 4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum value. 5. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be exceeded. Refer to Table 14 for the values of the maximum allowed input voltage. 6. When several inputs are submitted to a current injection, the maximum IINJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). Table 16. Thermal characteristics Symbol TSTG TJ Ratings Storage temperature range Maximum junction temperature DocID028010 Rev 4 Value Unit - 65 to +150 C 125 C 91/217 190 Electrical characteristics STM32F479xx 5.3 Operating conditions 5.3.1 General operating conditions Table 17. General operating conditions Symbol fHCLK Conditions(1) Min Typ Max Power Scale 3 (VOS[1:0] bits in PWR_CR register = 0x01), Regulator ON, over-drive OFF 0 - 120 - 144 - 168 - 168 - 180 Parameter Internal AHB clock frequency Power Scale 2 (VOS[1:0] bits in PWR_CR register = 0x10), Regulator ON Power Scale 1 (VOS[1:0] bits in PWR_CR register= 0x11), Regulator ON fPCLK1 Internal APB1 clock frequency fPCLK2 Internal APB2 clock frequency VDD (3)(4) VDDA VDDUSB VDDDSI VBAT 92/217 Analog operating voltage (ADC limited to 2.4 M samples) Over-drive ON Over-drive OFF Over-drive ON 0 0 - 42 Over-drive ON 0 - 45 Over-drive OFF 0 - 84 Over-drive ON 0 - 90 1.7(2) - 3.6 1.7(2) - 2.4 2.4 - 3.6 1.7 3.3 3.6 3.0 - 3.6 - 3.6 - 3.6 - Must be the same potential as MHz 0 Over-drive OFF Standard operating voltage Analog operating voltage (ADC limited to 1.2 M samples) Over-drive OFF Unit VDD(5) V USB supply voltage USB not used (supply voltage for PA11, PA12, USB used PB14 and PB15 pins) DSI system operating voltage - 1.7(2) Backup operating voltage - 1.65 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 17. General operating conditions (continued) Symbol Conditions(1) Parameter Power Scale 3 ((VOS[1:0] bits in PWR_CR register = 0x01), 120 MHz HCLK max frequency Power Scale 2 ((VOS[1:0] bits in PWR_CR register = 0x10), 144 MHz Regulator ON: 1.2 V internal HCLK max frequency with over-drive OFF voltage on VCAP_1/VCAP_2 pins or 168 MHz with over-drive ON V12 VIN PD Typ Max 1.08 1.14 1.20 1.20 1.26 1.32 1.26 1.32 1.40 Regulator OFF: 1.2 V external voltage must be supplied from external regulator on VCAP_1/VCAP_2 pins(6) Max frequency 120 MHz 1.10 1.14 1.20 Max frequency 144 MHz 1.20 1.26 1.32 Max frequency 168 MHz 1.26 1.32 1.38 Input voltage on RST and FT pins(7) 2 V VDD 3.6 V - 0.3 - 5.5 VDD 2 V - 0.3 - 5.2 Input voltage on TTa pins - - 0.3 - VDDA +0.3 Input voltage on BOOT0 pin - 0 - 9 LQFP100 - - 465 LQFP144 - - 500 WLCSP168 - - 645 UFBGA169 - - 385 LQFP176 - - 526 UFBGA176 - - 513 LQFP208 - - 1053 TFBGA216 - - 690 - 40 - 85 Low power dissipation - 40 - 105 Maximum power dissipation - 40 - 105 - 40 - 125 6 suffix version - 40 - 105 7 suffix version - 40 - 125 Power dissipation at TA = 85 C for suffix 6 or TA = 105 C for suffix 7(8) TA Ambient temperature for 7 suffix version Junction temperature range Maximum power dissipation (9) Low power dissipation(9) Unit V Power Scale 1 ((VOS[1:0] bits in PWR_CR register = 0x11), 168 MHz HCLK max frequency with over-drive OFF or 180 MHz with over-drive ON Ambient temperature for 6 suffix version TJ Min V mW C 1. The over-drive mode is not supported at the voltage ranges from 1.7 to 2.1 V. 2. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.19.2). 3. When the ADC is used, refer to Table 76. 4. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V. 5. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and power-down operation. 6. The over-drive mode is not supported when the internal regulator is OFF. DocID028010 Rev 4 93/217 190 Electrical characteristics STM32F479xx 7. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled 8. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. 9. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax. Table 18. Limitations depending on the operating power supply range Operating power supply range VDD = 1.7 to 2.1 V(3) VDD = 2.1 to 2.4 V VDD = 2.4 to 2.7 V VDD = 2.7 to 3.6 V(5) ADC operation Maximum Flash memory access frequency with no wait states (fFlashmax) Maximum HCLK frequency vs. Flash memory wait states (1)(2) 20 MHz(4) 168 MHz with 8 wait states and over-drive OFF Conversion time up to 1.2 Msps 22 MHz 180 MHz with 8 wait states and over-drive ON 24 MHz 180 MHz with 7 wait states and over-drive ON 30 MHz 180 MHz with 5 wait states and over-drive ON Conversion time up to 2.4 Msps I/O operation No I/O compensation I/O compensation works Possible Flash memory operations 8-bit erase and program operations only 16-bit erase and program operations 16-bit erase and program operations 32-bit erase and program operations 1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is required. 2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state program execution. 3. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.19.2). 4. Prefetch is not available. 5. When VDDUSB is connected to VDD, the voltage range for USB full speed PHYs can drop down to 2.7 V. However the electrical characteristics of D- and D+ pins will be degraded between 2.7 and 3 V. 5.3.2 VCAP1/VCAP2 external capacitor Stabilization for the main regulator is achieved by connecting an external capacitor CEXT to the VCAP1/VCAP2 pins. CEXT is specified in Table 19. Figure 26. External capacitor CEXT & (65 5/HDN 069 1. Legend: ESR is the equivalent series resistance. 94/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 19. VCAP1/VCAP2 operating conditions(1) Symbol Parameter Conditions CEXT Capacitance of external capacitor 2.2 F ESR ESR of external capacitor <2 1. When bypassing the voltage regulator, the two 2.2 F VCAP capacitors are not required and should be replaced by two 100 nF decoupling capacitors. 5.3.3 Operating conditions at power-up / power-down (regulator ON) Subject to general operating conditions for TA. Table 20. Operating conditions at power-up / power-down (regulator ON) Symbol tVDD 5.3.4 Parameter Min Max VDD rise time rate 20 VDD fall time rate 20 Unit s/V Operating conditions at power-up / power-down (regulator OFF) Subject to general operating conditions for TA. Table 21. Operating conditions at power-up / power-down (regulator OFF)(1) Symbol tVDD tVCAP Parameter Conditions Min Max VDD rise time rate Power-up 20 VDD fall time rate Power-down 20 VCAP_1 and VCAP_2 rise time rate Power-up 20 VCAP_1 and VCAP_2 fall time rate Power-down 20 Unit s/V 1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD reach below 1.08 V. 5.3.5 Reset and power control block characteristics The parameters given in Table 22 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. DocID028010 Rev 4 95/217 190 Electrical characteristics STM32F479xx Table 22. Reset and power control block characteristics Symbol Conditions Programmable voltage detector level selection VPVD VPVDhyst Parameter (1) Power-on/power-down reset threshold VPDRhyst(1) PDR hysteresis VBOR1 Brownout level 1 threshold VBOR2 Brownout level 2 threshold VBOR3 Brownout level 3 threshold VBORhyst Typ Max PLS[2:0]=000 (rising edge) 2.09 2.14 2.19 PLS[2:0]=000 (falling edge) 1.98 2.04 2.08 PLS[2:0]=001 (rising edge) 2.23 2.30 2.37 PLS[2:0]=001 (falling edge) 2.13 2.19 2.25 PLS[2:0]=010 (rising edge) 2.39 2.45 2.51 PLS[2:0]=010 (falling edge) 2.29 2.35 2.39 PLS[2:0]=011 (rising edge) 2.54 2.60 2.65 PLS[2:0]=011 (falling edge) 2.44 2.51 2.56 PLS[2:0]=100 (rising edge) 2.70 2.76 2.82 PLS[2:0]=100 (falling edge) 2.59 2.66 2.71 PLS[2:0]=101 (rising edge) 2.86 2.93 2.99 PLS[2:0]=101 (falling edge) 2.65 2.84 2.92 PLS[2:0]=110 (rising edge) 2.96 3.03 3.10 PLS[2:0]=110 (falling edge) 2.85 2.93 2.99 PLS[2:0]=111 (rising edge) 3.07 3.14 3.21 PLS[2:0]=111 (falling edge) 2.95 3.03 3.09 - 100 - Falling edge 1.60 1.68 1.76 Rising edge 1.64 1.72 1.80 - 40 - Falling edge 2.13 2.19 2.24 Rising edge 2.23 2.29 2.33 Falling edge 2.44 2.50 2.56 Rising edge 2.53 2.59 2.63 Falling edge 2.75 2.83 2.88 Rising edge 2.85 2.92 2.97 PVD hysteresis VPOR/PDR (1) Min - - Unit V mV V mV V BOR hysteresis - - 100 - mV POR reset temporization - 0.5 1.5 3.0 ms IRUSH(1) InRush current on voltage regulator power-on (POR or wakeup from Standby) - - 160 200 mA ERUSH(1) InRush energy on voltage regulator power-on (POR or wakeup from Standby) - - 5.4 C TRSTTEMPO(1)(2) VDD = 1.7 V, TA = 105 C, IRUSH = 171 mA for 31 s 1. Guaranteed by design. 2. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first instruction is read by the user application code. 96/217 DocID028010 Rev 4 STM32F479xx 5.3.6 Electrical characteristics Over-drive switching characteristics When the over-drive mode switches from enabled to disabled or disabled to enabled, the system clock is stalled during the internal voltage set-up. The over-drive switching characteristics are given in Table 23. They are subject to general operating conditions for TA. Table 23. Over-drive switching characteristics(1) Symbol Tod_swen Tod_swdis Parameter Over_drive switch enable time Conditions Min Typ Max HSI - 45 - HSE max for 4 MHz and min for 26 MHz 45 - 100 External HSE 50 MHz - 40 - HSI - 20 - 20 - 80 - 15 - HSE max for 4 MHz Over_drive switch and min for 26 MHz. disable time External HSE 50 MHz Unit s 1. Guaranteed by design. 5.3.7 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 25. All the run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to CoreMark(R) code. DocID028010 Rev 4 97/217 190 Electrical characteristics STM32F479xx Typical and maximum current consumption The MCU is placed under the following conditions: 98/217 * All I/O pins are in input mode with a static value at VDD or VSS (no load). * All peripherals are disabled except if it is explicitly mentioned. * The Flash memory access time is adjusted both to fHCLK frequency and VDD range (see Table 18: Limitations depending on the operating power supply range). * When the regulator is OFF, the V12 is provided externally, as described in Table 17: General operating conditions. * The voltage scaling and over-drive mode are adjusted to fHCLK frequency as follows: - Scale 3 for fHCLK 120 MHz - Scale 2 for 120 MHz < fHCLK 144 MHz - Scale 1 for 144 MHz < fHCLK 180 MHz. The over-drive is only ON at 180 MHz. * The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2. * External clock frequency is 25 MHz and PLL is ON when fHCLK is higher than 25 MHz. * The typical current consumption values are obtained for 1.7 V VDD 3.6 V voltage range and for ambient temperature TA= 25 C unless otherwise specified. * The maximum values are obtained for 1.7 V VDD 3.6 V voltage range and a maximum ambient temperature (TA), unless otherwise specified. * For the voltage range 1.7 V VDD 2.1 V the maximum frequency is 168 MHz. DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 24. Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch) or RAM, regulator ON Max(1) Symbol Parameter Conditions fHCLK (MHz) Typ 180 All Peripherals enabled(2)(3) IDD Supply current in RUN mode All Peripherals disabled(2) TA = 25 C TA = 85 C TA = 105 C 103 109(4) 142 175(4) 168 94 99 124 149 150 84 89 114 140 144 77 81 104 127 120 57 60 79 98 90 43 46 64 84 60 30 33 51 70 30 16 19 37 57 25 14 16 34 54 16 7 10 28 48 8 4 7 26 46 4 3 6 24 44 2 3 5 23 43 180 50 56(4) 89 124(4) 168 45 51 75 102 150 41 46 70 97 144 37 42 63 88 120 28 31 49 69 90 21 24 42 63 60 15 17 36 56 30 9 11 29 49 25 7 10 28 48 16 4 7 25 45 8 3 6 22 44 4 3 5 23 43 2 2 5 23 43 Unit mA 1. Guaranteed based on test during characterization. 2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption should be considered. 3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for the analog part. 4. Guaranteed by test in production. DocID028010 Rev 4 99/217 190 Electrical characteristics STM32F479xx Table 25. Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator disabled), regulator ON Max(1) Symbol Parameter Conditions All Peripherals enabled(2)(3) IDD Supply current in RUN mode All Peripherals disabled fHCLK (MHz) Typ 168 TA = 25 C TA = 85 C TA = 105 C 97 102 128 154 150 87 92 118 143 144 80 84 108 131 120 65 68 88 108 90 51 54 73 93 60 37 41 59 79 30 21 23 42 62 25 18 20 39 59 168 49 55 79 105 150 44 49 44 100 144 40 45 68 92 120 36 39 58 78 90 29 32 51 71 60 22 25 44 64 30 13 15 34 54 25 11 13 32 52 Unit mA 1. Guaranteed based on test during characterization. 2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption should be considered. 3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for the analog part. 100/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 26. Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch), regulator OFF Max(1) Typ Symbol Parameter Conditions All Peripherals enabled(2) (3) Supply current in RUN mode IDD12 / IDD from V12 and VDD supply All Peripherals disabled fHCLK (MHz) IDD12 IDD 168 93 150 TA = 25 C TA = 85 C TA = 105 C Unit IDD12 IDD IDD12 IDD IDD12 IDD 1 98 1 123 1 148 1 83 1 88 1 113 1 138 1 144 76 1 80 1 103 1 126 1 120 56 1 59 1 78 1 97 1 90 43 1 45 1 64 1 83 1 60 29 1 32 1 50 1 70 1 30 15 1 18 1 36 1 56 1 25 13 1 15 1 34 1 53 1 168 44 1 50 1 72 1 94 1 150 40 1 45 1 68 1 90 1 144 36 1 40 1 62 1 82 1 120 27 1 30 1 48 1 66 1 90 20 1 23 1 41 1 60 1 60 14 1 16 1 35 1 53 1 30 8 1 10 1 28 1 47 1 25 7 1 9 1 27 1 46 1 mA 1. Guaranteed based on test during characterization. 2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, DSI regulator, an additional power consumption should be considered. 3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for the analog part. DocID028010 Rev 4 101/217 190 Electrical characteristics STM32F479xx Table 27. Typical and maximum current consumption in Sleep mode, regulator ON Max(1)(2)(3) Symbol Parameter Conditions fHCLK (MHz) All Peripherals enabled IDD Supply current in Sleep mode All Peripherals disabled Typ Unit TA = 25 C TA = 85 C TA = 105 C 180 78 88(4) 118 151(4) 168 71 76 101 127 150 64 71 94 119 144 58 62 85 109 120 43 46 65 85 90 33 37 54 74 60 23 25 44 63 30 13 15 34 53 25 11 13 32 52 16 5 8 27 47 8 4 7 25 45 4 3 5 24 44 2 2 5 23 43 63 96(4) (4) 180 23 29 168 21 25 50 76 150 19 23 48 74 144 17 31 43 67 120 13 16 34 54 90 10 13 31 51 60 7 10 28 48 30 5 7 25 45 25 4 7 25 45 16 2 5 23 43 8 2 5 23 43 4 2 5 23 43 2 2 4 23 42 mA 1. Guaranteed based on test during characterization. 2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption should be considered. 3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for the analog part. 4. Guaranteed by test in production. 102/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 28. Typical and maximum current consumption in Sleep mode, regulator OFF Max(1) Typ Symbol Parameter Conditions All Peripherals enabled IDD12 / IDD Supply current in RUN mode from V12 and VDD supply All Peripherals disabled fHCLK (MHz) IDD12 IDD 168 70 150 TA = 25 C TA = 85 C TA = 105 C IDD12 IDD IDD12 IDD IDD12 IDD 1 75 1 100 1 126 1 63 1 70 1 93 1 118 1 144 57 1 61 1 84 1 108 1 120 42 1 45 1 64 1 84 1 90 32 1 36 1 53 1 73 1 60 22 1 24 1 43 1 63 1 30 12 1 14 1 33 1 53 1 25 10 1 12 1 31 1 51 1 168 20 1 24 1 49 1 75 1 150 18 1 22 1 47 1 73 1 144 16 1 19 1 42 1 66 1 120 12 1 14 1 33 1 53 1 90 10 1 12 1 30 1 50 1 60 7 1 9 1 27 1 47 1 30 4 1 6 1 24 1 44 1 25 4 1 6 1 24 1 44 1 Unit mA 1. Guaranteed based on test during characterization. DocID028010 Rev 4 103/217 190 Electrical characteristics STM32F479xx Table 29. Typical and maximum current consumption in Stop mode Max(1) Symbol Parameter Supply current in Stop mode with voltage regulator in main regulator mode IDD_STOP_NM (normal mode) Supply current in Stop mode with voltage regulator in Low Power regulator mode Supply current in Stop mode with voltage regulator in main regulator and underIDD_STOP_UDM drive mode (under-drive Supply current in Stop mode) mode with voltage regulator in Low Power regulator and underdrive mode Conditions TA = 25 C TA = TA = 85 C 105 C Flash memory in Stop mode, all oscillators OFF, no independent watchdog 0.63 3 17 33 Flash memory in Deep power down mode, all oscillators OFF, no independent watchdog 0.58 3 17 33 Flash memory in Stop mode, all oscillators OFF, no independent watchdog 0.50 2 15 28 Flash memory in Deep power down mode, all oscillators OFF, no independent watchdog 0.44 2 15 28 Flash memory in Deep power down mode, main regulator in under-drive mode, all oscillators OFF, no independent watchdog 0.21 1 6 12 Flash memory in Deep power down mode, Low Power regulator in under-drive mode, all oscillators OFF, no independent watchdog 0.14 1 6 13 1. Data based on characterization, tested in production. 104/217 Typ DocID028010 Rev 4 Unit mA STM32F479xx Electrical characteristics Table 30. Typical and maximum current consumption in Standby mode Typ(1) Symbol Parameter Max(2) TA = 25 C TA = 25 C Conditions TA = 85 C TA = 105 C VDD = 1.7 V VDD= 2.4 V VDD = 3.3 V Backup SRAM ON, RTC and LSE oscillator OFF 1.7 2.5 2.9 6(3) 18 35(3) Backup SRAM OFF, RTC and LSE oscillator OFF 1.0 1.8 2.20 5(3) 15 30(3) Backup SRAM OFF, RTC ON and LSE oscillator in Power Drive mode 1.7 2.7 3.2 7 20 39 Supply current Backup SRAM ON, RTC ON IDD_STBY in Standby and LSE oscillator in Power mode Drive mode 2.4 3.4 4.0 8 25 48 Backup SRAM ON, RTC ON and LSE oscillator in High Drive mode 3.2 4.2 4.8 10 29 57 Backup SRAM OFF, RTC ON and LSE oscillator in High Drive mode 2.5 3.5 4.1 8 25 48 Unit VDD = 3.3 V A 1. PDR is off for VDD=1.7 V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by additional 1.2 A 2. Based on characterization, not tested in production unless otherwise specified. 3. Based on characterization, tested in production. DocID028010 Rev 4 105/217 190 Electrical characteristics STM32F479xx Table 31. Typical and maximum current consumption in VBAT mode Max(2) Typ Symbol TA = 25 C TA = 25 C Conditions(1) Parameter VBAT = VBAT= VBAT = 1.7 V 2.4 V 3.3 V TA = 85 C TA = 105 C Unit VBAT = 3.3 V Backup SRAM ON, RTC ON and LSE oscillator in Low Power mode 1.431 1.577 1.825 1.9 12.0 24.0 Backup SRAM OFF, RTC ON and LSE oscillator in Low Power mode 0.720 0.849 1.060 1.1 7.0 13.9 2.212 2.368 2.630 2.80 17.3 34.6 1.499 1.637 1.862 2.0 12.3 24.5 Backup SRAM ON, RTC and LSE OFF 0.710 0.720 0.760 0.8(3) 5.0 10.0(3) Backup SRAM OFF, RTC and LSE OFF 0.018 0.020 0.024 0.2(3) 2.0 4.0(3) Backup SRAM ON, RTC ON Backup and LSE oscillator in High IDD_VBAT domain supply Drive mode current Backup SRAM OFF, RTC ON and LSE oscillator in High Drive mode A 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Based on characterization, tested in production. 3. Based on test during characterization. Figure 27. Typical VBAT current consumption (RTC ON / backup SRAM ON and LSE in Low drive mode) 6 1.65V IDD_VBAT (A) 5 1.70V 1.80V 4 2.00V 3 2.40V 2 2.70V 3.00V 1 0 3.30V 3.60V 0 20 40 60 Temperature (C) 106/217 DocID028010 Rev 4 80 100 STM32F479xx Electrical characteristics Figure 28. Typical VBAT current consumption (RTC ON / backup SRAM ON and LSE in High drive mode) IDD_VBAT (A) 7 1.65V 6 1.70V 5 1.80V 2.00V 4 2.40V 3 2.70V 2 3.00V 1 3.30V 0 3.60V 0 20 40 60 Temperature (C) 80 100 I/O system current consumption The current consumption of the I/O system has two components: static and dynamic. I/O static current consumption All the I/Os used as inputs with pull-up generate current consumption when the pin is externally held low. The value of this current consumption can be simply computed by using the pull-up/pull-down resistors values given in Table 58: I/O static characteristics. For the output pins, any external pull-down or external load must also be considered to estimate the current consumption. Additional I/O current consumption is due to I/Os configured as inputs if an intermediate voltage level is externally applied. This current consumption is caused by the input Schmitt trigger circuits used to discriminate the input value. Unless this specific configuration is required by the application, this supply current consumption can be avoided by configuring these I/Os in analog mode. This is notably the case of ADC input pins which should be configured as analog inputs. Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently, as a result of external electromagnetic noise. To avoid current consumption related to floating pins, they must either be configured in analog mode, or forced internally to a definite digital value. This can be done either by using pull-up/down resistors or by configuring the pins in output mode. I/O dynamic current consumption In addition to the internal peripheral current consumption (see Table 33), the I/Os used by an application also contribute to the current consumption. When an I/O pin switches, it uses DocID028010 Rev 4 107/217 190 Electrical characteristics STM32F479xx the current from the MCU supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load (internal or external) connected to the pin: I SW = V DD x f SW x C where ISW is the current sunk by a switching I/O to charge/discharge the capacitive load VDD is the MCU supply voltage fSW is the I/O switching frequency C is the total capacitance seen by the I/O pin: C = CINT+ CEXT The test pin is configured in push-pull output mode and is toggled by software at a fixed frequency. Table 32. Switching output I/O current consumption(1) I/O toggling Symbol Parameter Conditions VDD = 3.3 V C= CINT(2) IDDIO I/O switching Current VDD = 3.3 V CEXT = 0 pF C = CINT + CEXT + CS 108/217 DocID028010 Rev 4 frequency (fsw) Typ 2 MHz 0.0 8 MHz 0.2 25 MHz 0.6 50 MHz 1.1 60 MHz 1.3 84 MHz 1.8 90 MHz 1.9 2 MHz 0.1 8 MHz 0.4 25 MHz 1.23 50 MHz 2.43 60 MHz 2.93 84 MHz 3.86 90 MHz 4.07 Unit mA STM32F479xx Electrical characteristics Table 32. Switching output I/O current consumption(1) (continued) I/O toggling Symbol Parameter Conditions VDD = 3.3 V CEXT = 10 pF C = CINT + CEXT + CS IDDIO I/O switching Current VDD = 3.3 V CEXT = 22 pF C = CINT + CEXT + CS VDD = 3.3 V CEXT = 33 pF C = CINT + Cext + CS frequency (fsw) Typ 2 MHz 0.18 8 MHz 0.67 25 MHz 2.09 50 MHz 3.6 60 MHz 4.5 84 MHz 7.8 90 MHz 9.8 2 MHz 0.26 8 MHz 1.01 25 MHz 3.14 50 MHz 6.39 60 MHz 10.68 2 MHz 0.33 8 MHz 1.29 25 MHz 4.23 50 MHz 11.02 Unit mA 1. CS is the PCB board capacitance including the pad pin. CS = 7 pF (estimated value). 2. This test is performed by cutting the LQFP176 package pin (pad removal). On-chip peripheral current consumption The MCU is placed under the following conditions: * At startup, all I/O pins are in analog input configuration. * All peripherals are disabled unless otherwise mentioned. * I/O compensation cell enabled. * The ART accelerator is ON. * Scale 1 mode selected, internal digital voltage V12 = 1.32 V. * HCLK is the system clock. fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2. The given value is calculated by measuring the difference of current consumption * - with all peripherals clocked off - with only one peripheral clocked on - fHCLK = 180 MHz (Scale1 + over-drive ON), fHCLK = 144 MHz (Scale 2), fHCLK = 120 MHz (Scale 3) Ambient operating temperature is 25 C and VDD=3.3 V. DocID028010 Rev 4 109/217 190 Electrical characteristics STM32F479xx Table 33. Peripheral current consumption IDD(Typ)(1) Peripheral AHB1 (up to 180 MHz) AHB2 (up to 180 MHz) AHB3 (up to 180 MHz) Scale 2 Scale 3 GPIOA 3.16 3.00 2.58 GPIOB 2.67 2.62 2.25 GPIOC 2.42 2.31 2.10 GPIOD 2.22 2.10 1.79 GPIOE 2.60 2.48 2.23 GPIOF 2.39 2.27 2.08 GPIOG 2.27 2.13 1.98 GPIOH 2.34 2.20 2.02 GPIOI 2.52 2.37 2.17 GPIOJ 2.16 2.03 1.86 GPIOK 2.20 2.06 1.89 OTG_HS+ULPI 36.49 33.89 29.90 CRC 0.62 0.55 0.50 BKPSRAM 0.83 0.74 0.63 DMA1(2) 3.3 x N + 6.8 3 x N + 6.3 2.7 x N + 5.5 DMA2(2) 3.4 x N + 5.7 3.1 x N + 5.3 2.8 x N + 4.6 DMA2D 33.33 30.66 26.98 ETH_MAC ETH_MAC_TX ETH_MAC_RX ETH_MAC_PTP 22.30 20.69 18.19 USB_OTG_FS 34.33 31.96 28.35 DVCMI 3.61 3.35 2.98 RNG 1.94 1.82 1.61 CRYP 2.42 2.24 2.00 HASH 4.14 3.80 3.35 QUADSPI 16.83 15.57 13.83 FMC 17.22 15.92 14.00 12.17 11.19 9.97 Bus matrix(3) 110/217 Unit Scale 1 DocID028010 Rev 4 A/MHz A/MHz A/MHz A/MHz STM32F479xx Electrical characteristics Table 33. Peripheral current consumption (continued) IDD(Typ)(1) Peripheral APB1 (up to 45 MHz) Unit Scale 1 Scale 2 Scale 3 TIM2 19.11 17.56 15.33 TIM3 15.62 14.22 12.17 TIM4 16.22 14.64 12.83 TIM5 18.44 16.72 14.00 TIM6 3.18 2.69 2.17 TIM7 3.11 2.56 2.00 TIM12 8.67 7.56 6.50 TIM13 6.11 5.33 4.43 TIM14 6.44 5.61 4.67 PWR 17.44 15.61 13.53 USART2 5.44 4.64 3.93 USART3 5.51 4.72 4.00 UART4 5.22 4.64 3.83 UART5 5.33 4.64 3.83 UART7 5.56 4.78 4.10 UART8 5.24 4.64 3.93 I2C1 4.78 4.08 3.43 I2C2 5.11 4.50 3.73 I2C3 4.78 4.08 3.43 SPI2/I2S2(4) 4.11 3.53 3.00 SPI3/I2S3(4) 4.33 3.67 3.17 CAN1 8.89 7.83 6.87 CAN2 7.22 6.44 5.50 DAC(5) 2.89 2.69 2.40 WWDG 1.73 1.44 1.00 DocID028010 Rev 4 A/MHz 111/217 190 Electrical characteristics STM32F479xx Table 33. Peripheral current consumption (continued) IDD(Typ)(1) Peripheral APB2 (up to 90 MHz) Unit Scale 1 Scale 2 Scale 3 SDIO 7.94 7.18 6.37 TIM1 19.44 17.81 15.80 TIM8 19.44 17.81 15.80 TIM9 8.44 7.60 6.77 TIM10 5.67 5.03 4.50 TIM11 5.72 5.10 4.55 ADC1(6) 5.06 4.54 4.05 ADC2(6) 5.00 4.47 3.97 ADC3(6) 5.26 4.75 4.17 USART1 4.83 4.33 3.83 USART6 4.83 4.33 3.83 SPI1 2.11 1.76 1.60 SPI4 2.11 1.69 1.60 SPI5 2.11 1.76 1.60 SPI6 2.11 1.76 1.60 SYSCFG 1.72 1.35 1.22 LTDC 37.61 34.53 30.60 SAI1 3.44 3.01 2.72 DSI 32.98 30.32 26.87 A/MHz 1. When the I/O compensation cell is ON, IDD typical value increases by 0.22 mA. 2. DMA1/DMA2 current consumption is calculated by the equation. N: is the number of streams enabled, N= [1..8] 3. The BusMatrix is automatically active when at least one master is ON. 4. To enable an I2S peripheral, first set the I2SMOD bit and then the I2SE bit in the SPI_I2SCFGR register. 5. When the DAC is ON and EN1/2 bits are set in DAC_CR register, add an additional power consumption of 0.8 mA per DAC channel for the analog part. 6. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for the analog part. 112/217 DocID028010 Rev 4 STM32F479xx 5.3.8 Electrical characteristics Wakeup time from low-power modes The wakeup times given in Table 34 are measured starting from the wakeup event trigger up to the first instruction executed by the CPU: * For Stop or Sleep modes: the wakeup event is WFE. * WKUP (PA0) pin is used to wakeup from Standby, Stop and Sleep modes. All timings are derived from tests performed under ambient temperature and VDD=3.3 V. Table 34. Low-power mode wakeup timings Symbol tWUSLEEP(2) tWUSTOP(2) tWUSTOP(2) Parameter Wakeup from Sleep Wakeup from Stop mode with MR/LP regulator in normal mode Wakeup from Stop mode with MR/LP regulator in Under-drive mode tWUSTDBY (2)(3) Wakeup from Standby mode Conditions - Typ(1) Max(1) 5 6 Main regulator is ON 12.9 15.0 Main regulator is ON and Flash memory in Deep power down mode 105 120 Low power regulator is ON 22 28 Low power regulator is ON and Flash memory in Deep power down mode 114 130 Main regulator in under-drive mode (Flash memory in Deep power-down mode) 107 114 Low power regulator in under-drive mode (Flash memory in Deep power-down mode) 115 121 318 371 - Unit CPU clock cycles s 1. Based on test during characterization. 2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first 3. tWUSTDBY maximum value is given at -40 C. DocID028010 Rev 4 113/217 190 Electrical characteristics 5.3.9 STM32F479xx External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The external clock signal has to respect the Table 58. However, the recommended clock input waveform is shown in Figure 29. The characteristics given in Table 35 result from tests performed using an high-speed external clock source, and under ambient temperature and supply voltage conditions summarized in Table 17. Table 35. High-speed external user clock characteristics Symbol Parameter Conditions fHSE_ext External user clock source frequency(1) VHSEH OSC_IN input pin high level voltage VHSEL OSC_IN input pin low level voltage tw(HSE) tw(HSE) OSC_IN high or low time(1) Typ Max Unit 1 - 50 MHz 0.7VDD - VDD VSS - 0.3VDD 5 - - - V ns tr(HSE) tf(HSE) OSC_IN rise or fall Cin(HSE) time(1) - - 10 - - 5 - pF - 45 - 55 % VSS VIN VDD - - 1 A OSC_IN input capacitance(1) DuCy(HSE) Duty cycle IL Min OSC_IN Input leakage current 1. Guaranteed by design. Low-speed external user clock generated from an external source In bypass mode the LSE oscillator is switched off and the input pin is a standard I/O. The external clock signal has to respect the Table 58: I/O static characteristics. However, the recommended clock input waveform is shown in Figure 30. The characteristics given in Table 36 result from tests performed using an low-speed external clock source, and under ambient temperature and supply voltage conditions summarized in Table 17. Table 36. Low-speed external user clock characteristics Symbol Parameter Conditions Min Typ Max Unit - 32.768 1000 kHz fLSE_ext User External clock source frequency(1) VLSEH OSC32_IN input pin high level voltage 0.7VDD - VDD VLSEL OSC32_IN input pin low level voltage VSS - 0.3VDD tw(LSE) tf(LSE) OSC32_IN high or low time(1) 450 - - tr(LSE) tf(LSE) 114/217 - V ns OSC32_IN rise or fall time(1) - DocID028010 Rev 4 - 50 STM32F479xx Electrical characteristics Table 36. Low-speed external user clock characteristics (continued) Symbol Cin(LSE) Parameter OSC32_IN input capacitance Conditions Min Typ Max Unit - - 5 - pF - 30 - 70 % VSS VIN VDD - - 1 A (1) DuCy(LSE) Duty cycle IL OSC32_IN Input leakage current 1. Guaranteed by design. Figure 29. High-speed external clock source AC timing diagram 6(3%( 6(3%, TR(3% TF(3% T7(3% /3#?). ), T7(3% T 4(3% %XTERNAL CLOCK SOURCE F(3%?EXT 34-& AI Figure 30. Low-speed external clock source AC timing diagram 9/6(+ 9/6(/ WU /6( WI /6( W: /6( W: /6( W 7/6( ([WHUQDO FORFNVRXUFH I/6(BH[W 26&B,1 ,/ 670) DL High-speed external clock generated from a crystal/ceramic resonator The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on characterization results obtained with typical external components specified in Table 37. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization DocID028010 Rev 4 115/217 190 Electrical characteristics STM32F479xx time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). Table 37. HSE 4-26 MHz oscillator characteristics (1) Symbol Parameter fOSC_IN RF IDD Conditions Min Typ Max Unit Oscillator frequency - 4 - 26 MHz Feedback resistor - - 200 - k VDD=3.3 V, ESR= 30 , CL=5 pF@25 MHz - 450 - VDD=3.3 V, ESR= 30 , CL=10 pF@25 MHz - 530 - - - 500 - 500 ppm Startup - - 1 mA/V VDD is stabilized - 2 - ms HSE current consumption ACCHSE(2) HSE accuracy Gm_crit_max Maximum critical crystal gm tSU(HSE) (3) Startup time A 1. Guaranteed by design. 2. This parameter depends on the crystal used in the application. The minimum and maximum values must be respected to comply with USB standard specifications. 3. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is reached. This value is based on characterization and not tested in production. It is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the 5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match the requirements of the crystal or resonator (see Figure 31). CL1 and CL2 are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF can be used as a rough estimate of the combined pin and board capacitance) when sizing CL1 and CL2. Note: For information on selecting the crystal, refer to the application note AN2867 "Oscillator design guide for ST microcontrollers" available from www.st.com. Figure 31. Typical application with an 8 MHz crystal 5HVRQDWRUZLWK LQWHJUDWHGFDSDFLWRUV &/ 0+] UHVRQDWRU &/ I+6( 26&B,1 5(;7 5) 26&B28 7 670) DL 1. REXT value depends on the crystal characteristics. 116/217 %LDV FRQWUROOHG JDLQ DocID028010 Rev 4 STM32F479xx Electrical characteristics Low-speed external clock generated from a crystal/ceramic resonator The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All the informations given in this paragraph are based on characterization results obtained with typical external components specified in Table 38. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). Table 38. LSE oscillator characteristics (fLSE = 32.768 kHz)(1) Symbol RF IDD ACCLSE(3) Parameter Min Typ Max Unit - M Feedback resistor LSE current consumption Low power - 18.4 - mode(2) - - 1 (2) - - 3 High drive mode LSE accuracy - 500 - 500 mode(2) - - 0.56 (2) - - 1.5 - 2 - - Gm_crit_max Maximum critical crystal gm tSU(LSE)(4) Conditions Startup time Low power High drive mode VDD is stabilized A ppm A/V s 1. Guaranteed by design. 2. LSE mode cannot be changed "on the fly" otherwise, a glitch can be generated on OSCIN pin. 3. This parameter depends on the crystal used in the application. Refer to application note AN2867. 4. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is based on characterization and not tested in production. It is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. Note: For information on selecting the crystal, refer to the application note AN2867 "Oscillator design guide for ST microcontrollers" available from www.st.com. Figure 32. Typical application with a 32.768 kHz crystal 5HVRQDWRUZLWK LQWHJUDWHGFDSDFLWRUV &/ %LDV 5) FRQWUROOHG JDLQ N+ ] UHVRQDWRU &/ I/6( 26&B,1 26&B28 7 670) DL DocID028010 Rev 4 117/217 190 Electrical characteristics 5.3.10 STM32F479xx Internal clock source characteristics The parameters given in Table 39 and Table 40 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Table 39. HSI oscillator characteristics (1) Symbol fHSI Parameter Conditions Min Frequency - HSI user trimming step(2) (3) ACCHSI TA = -40 to 105 C TA = -10 to 85 HSI oscillator accuracy TA = 25 C(3) C(4) Typ Max Unit - 16 - MHz - - 1 % -8 - 4.5 % -4 - 4 % -1 - 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 s IDD(HSI)(2) HSI oscillator power consumption - - 60 80 A 1. VDD = 3.3 V, TA = -40 to 105 C unless otherwise specified. 2. Guaranteed by design 3. Based on test during characterization. 4. Factory calibrated, parts not soldered. Figure 33. ACCHSI vs. temperature ,^/ d D D d 06Y9 1. Based on test during characterization. 118/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Low-speed internal (LSI) RC oscillator Table 40. LSI oscillator characteristics (1) Symbol Parameter fLSI(2) tsu(LSI) Min Typ Max Unit 17 32 47 kHz Startup time - 15 40 s Power consumption - 0.4 0.6 A Frequency (3) IDD(LSI)(3) 1. VDD = 3 V, TA = -40 to 105 C unless otherwise specified. 2. Based on test during characterization. 3. Guaranteed by design. Figure 34. ACCLSI versus temperature MAX AVG MIN .ORMALIZED DEVIATI ON 4EMPERAT URE # -36 5.3.11 PLL characteristics The parameters given in Table 41 and Table 42 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 17. Table 41. Main PLL characteristics Symbol Parameter Conditions Min Typ Max fPLL_IN PLL input clock(1) - 0.95(2) 1 2.10 fPLL_OUT PLL multiplier output clock - 24 - 180 fPLL48_OUT 48 MHz PLL multiplier output clock - - 48 75 fVCO_OUT PLL VCO output - 192 - 432 DocID028010 Rev 4 Unit MHz 119/217 190 Electrical characteristics STM32F479xx Table 41. Main PLL characteristics (continued) Symbol tLOCK Parameter Conditions PLL lock time Min Typ Max VCO freq = 192 MHz 75 - 200 VCO freq = 432 MHz 100 - 300 RMS - 25 - peak to peak - 150 - RMS - 15 - peak to peak - 200 - Cycle-to-cycle jitter System clock 120 MHz Period Jitter (3) Jitter Unit s ps Main clock output (MCO) for RMII Ethernet Cycle to cycle at 50 MHz on 1000 samples - 32 - Main clock output (MCO) for MII Ethernet Cycle to cycle at 25 MHz on 1000 samples - 40 - Bit Time CAN jitter Cycle to cycle at 1 MHz on 1000 samples - 330 - IDD(PLL)(4) PLL power consumption on VDD VCO freq = 192 MHz VCO freq = 432 MHz 0.15 0.45 - 0.40 0.75 IDDA(PLL)(4) VCO freq = 192 MHz PLL power consumption on VDDA VCO freq = 432 MHz 0.30 0.55 - 0.40 0.85 mA 1. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared between PLL and PLLI2S. 2. Guaranteed by design. 3. The use of 2 PLLs in parallel can degrade the Jitter up to +30%. 4. Based on test during characterization. Table 42. PLLI2S (audio PLL) characteristics Symbol Parameter Conditions Min Typ Max Unit fPLLI2S_IN PLLI2S input clock(1) - 0.95(2) 1 2.10 fPLLI2S_OUT PLLI2S multiplier output clock - - - 216 fVCO_OUT PLLI2S VCO output - 192 - 432 tLOCK PLLI2S lock time VCO freq = 192 MHz 75 - 200 VCO freq = 432 MHz 100 - 300 RMS - 90 - - peak to peak - 280 - ps Average frequency of 12.288 MHz, N=432, R=5 on 1000 samples - 90 - ps Cycle to cycle at 48 KHz on 1000 samples - 400 - ps Master I2S clock jitter Jitter(3) WS I2S clock jitter 120/217 Cycle to cycle at 12.288 MHz on 48KHz period, N=432, R=5 DocID028010 Rev 4 MHz s STM32F479xx Electrical characteristics Table 42. PLLI2S (audio PLL) characteristics (continued) Symbol Parameter Conditions Min Typ Max IDD(PLLI2S)(4) PLLI2S power consumption VCO freq = 192 MHz on VDD VCO freq = 432 MHz 0.15 0.45 - 0.40 0.75 IDDA(PLLI2S)(4) PLLI2S power consumption VCO freq = 192 MHz on VDDA VCO freq = 432 MHz 0.30 0.55 - 0.40 0.85 Unit mA 1. Take care of using the appropriate division factor M to have the specified PLL input clock values. 2. Guaranteed by design. 3. Value given with main PLL running. 4. Based on test during characterization. Table 43. PLLSAI (audio and LCD-TFT PLL) characteristics Symbol Parameter Conditions Min Typ Max Unit fPLLSAI_IN PLLSAI input clock(1) - 0.95(2) 1 2.10 fPLLSAI_OUT PLLSAI multiplier output clock - - - 216 fVCO_OUT PLLSAI VCO output - 192 - 432 tLOCK PLLSAI lock time VCO freq = 192 MHz 75 - 200 VCO freq = 432 MHz 100 - 300 RMS - 90 - peak to peak - 280 - ps Average frequency of 12.288 MHz N = 432, R = 5 on 1000 samples - 90 - ps FS clock jitter Cycle to cycle at 48 KHz on 1000 samples - 400 - ps IDD(PLLSAI)(4) PLLSAI power consumption on VDD VCO freq = 192 MHz VCO freq = 432 MHz 0.15 0.45 - 0.40 0.75 IDDA(PLLSAI)(4) PLLSAI power consumption on VDDA VCO freq = 192 MHz VCO freq = 432 MHz 0.30 0.55 - 0.40 0.85 Cycle to cycle at 12.288 MHz on 48KHz period, N=432, R=5 Main SAI clock jitter (3) Jitter MHz s mA 1. Take care of using the appropriate division factor M to have the specified PLL input clock values. 2. Guaranteed by design. 3. Value given with main PLL running. 4. Based on test during characterization. DocID028010 Rev 4 121/217 190 Electrical characteristics 5.3.12 STM32F479xx PLL spread spectrum clock generation (SSCG) characteristics The spread spectrum clock generation (SSCG) feature allows to reduce electromagnetic interferences (see Table 54). It is available only on the main PLL. Table 44. SSCG parameters constraint Symbol Parameter Min Typ Max(1) Unit fMod Modulation frequency - - 10 KHz md Peak modulation depth 0.25 - 2 % MODEPER * INCSTEP - - - 215 -1 - 1. Guaranteed by design. Equation 1 The frequency modulation period (MODEPER) is given by the equation below: MODEPER = round [ f PLL_IN ( 4 x f Mod ) ] fPLL_IN and fMod must be expressed in Hz. As an example: If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by equation 1: 6 3 MODEPER = round [ 10 ( 4 x 10 ) ] = 250 Equation 2 Equation 2 allows to calculate the increment step (INCSTEP): INCSTEP = round [ ( ( 2 15 - 1 ) x md x PLLN ) ( 100 x 5 x MODEPER ) ] fVCO_OUT must be expressed in MHz. With a modulation depth (md) = 2 % (4 % peak to peak), and PLLN = 240 (in MHz): INCSTEP = round [ ( ( 2 15 - 1 ) x 2 x 240 ) ( 100 x 5 x 250 ) ] = 126md(quantitazed)% An amplitude quantization error may be generated because the linear modulation profile is obtained by taking the quantized values (rounded to the nearest integer) of MODPER and INCSTEP. As a result, the achieved modulation depth is quantized. The percentage quantized modulation depth is given by the following formula: md quantized % = ( MODEPER x INCSTEP x 100 x 5 ) ( ( 2 15 - 1 ) x PLLN ) As a result: md quantized % = ( 250 x 126 x 100 x 5 ) ( ( 2 122/217 DocID028010 Rev 4 15 - 1 ) x 240 ) = 2.002%(peak) STM32F479xx Electrical characteristics Figure 35 and Figure 36 show the main PLL output clock waveforms in center spread and down spread modes, where: F0 is fPLL_OUT nominal. Tmode is the modulation period. md is the modulation depth. Figure 35. PLL output clock waveforms in center spread mode )UHTXHQF\ 3//B287 PG ) PG WPRGH 7LPH [WPRGH 069 Figure 36. PLL output clock waveforms in down spread mode )UHTXHQF\ 3//B287 ) [PG WPRGH 7LPH [WPRGH 069 5.3.13 MIPI D-PHY characteristics The parameters given in Table 45 and Table 46 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 17. Table 45. MIPI D-PHY characteristics(1) Symbol Parameter Conditions Min Typ Max Unit - 12.5 ns Hi-Speed Input/Output Characteristics UINST UI instantaneous - DocID028010 Rev 4 2 123/217 190 Electrical characteristics STM32F479xx Table 45. MIPI D-PHY characteristics(1) (continued) Symbol Conditions Min Typ Max HS transmit common mode voltage - 150 200 250 |VCMTX| VCMTX mismatch when output is Differential-1 or Differential-0 - - - 5 |VOD| HS transmit differential voltage - 140 200 270 |VOD| VOD mismatch when output is Differential-1 or Differential-0 - - - 14 VOHHS HS output high voltage - - - 360 ZOS Single ended output impedance - 40 50 62.5 ZOS Single ended output impedance mismatch - - - 10 % 20%-80% rise and fall time - 100 - 0.35*UI ps VCMTX tHSr & tHSf Parameter Unit mV LP Receiver Input Characteristics VIL Logic 0 input voltage (not in ULP State) - - - 550 VIL-ULPS Logic 0 input voltage in ULP State - - - 300 VIH Input high level voltage - 880 - - Vhys Voltage hysteresis - 25 - - mV LP Emitter Output Characteristics VIL Output low level voltage - 1.1 1.2 1.2 V VIL-ULPS Output high level voltage - -50 - 50 mV VIH Output impedance of LP transmitter - 110 - - Vhys 15%-85% rise and fall time - - - 25 ns LP Contention Detector Characteristics VILCD Logic 0 contention threshold - - - 200 VIHCD Logic 0 contention threshold - 450 - - 1. Guaranteed based on test during characterization. 124/217 DocID028010 Rev 4 mV STM32F479xx Electrical characteristics Table 46. MIPI D-PHY AC characteristics LP mode and HS/LP transitions(1) Symbol Parameter Conditions Min Typ Max TLPX Transmitted length of any LowPower state period - 50 - - Time that the transmitter drives the Clock Lane LP-00 Line TCLK-PREPARE state immediately before the HS-0 Line state starting the HS transmission. - 38 - 95 TCLK-PREPARE Time that the transmitter drives + the HS-0 state prior to starting TCLK-ZERO the clock. - 300 - - TCLK-PRE Time that the HS clock shall be driven by the transmitter prior to any associated Data Lane beginning the transition from LP to HS mode. - 8 - - TCLK-POST Time that the transmitter continues to send HS clock after the last associated Data Lane has transitioned to LP Mode. - 62+52*UI - - TCLK-TRAIL Time that the transmitter drives the HS-0 state after the last payload clock bit of an HS transmission burst. - 60 - - THS-PREPARE Time that the transmitter drives the Data Lane LP-00 Line state immediately before the HS-0 Line state starting the HS transmission. - 40+4*UI - 85+6*UI THS-PREPARE + THS-ZERO THS-PREPARE+ Time that the transmitter drives the HS-0 state prior to transmitting the Sync sequence. - 145+10*UI - - THS-TRAIL Time that the transmitter drives the flipped differential state after last payload data bit of a HS transmission burst. - Max (n*8*UI, 60+n*4*UI) - - THS-EXIT Time that the transmitter drives LP-11 following a HS burst. - 100 - - TREOT 30%-85% rise time and fall time - - - 35 TEOT Transmitted time interval from the start of THS-TRAIL or TCLK-TRAIL, to the start of the LP-11 state following a HS burst. - - - 105+ n*12UI Unit ns UI ns 1. Guaranteed based on test during characterization. DocID028010 Rev 4 125/217 190 Electrical characteristics STM32F479xx Figure 37. MIPI D-PHY HS/LP clock lane transition timing diagram 7&/.3267 7(27 9,/ &ORFN /DQH 7&/.75$,/ 7+6(;,7 7/3; 7&/.35(3$5( 7&/.=(52 7&/.35( 'DWD /DQH 7/3; 7+635(3$5( 9,/ 069 Figure 38. MIPI D-PHY HS/LP data lane transition timing diagram &ORFN /DQH 'DWD /DQH 7/3; 7+635(3$5( /3 /3 7+6=(52 9,/ 75(27 /3 7(27 7+675$,/ 7+6(;,7 069 5.3.14 MIPI D-PHY PLL characteristics The parameters given in Table 47 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 17. Table 47. DSI-PLL characteristics(1) Symbol Conditions Min Typ Max PLL input clock - 4 - 100 fPLL_INFIN PFD input clock - 4 - 25 fPLL_OUT - 31.25 - 500 - 500 - 1000 - - - 200 fPLL_IN Parameter PLL multiplier output clock fVCO_OUT PLL VCO output tLOCK 126/217 PLL lock time DocID028010 Rev 4 Unit MHz s STM32F479xx Electrical characteristics Table 47. DSI-PLL characteristics(1) (continued) Symbol IDD(PLL) Parameter PLL power consumption on VDD12 Conditions Min Typ Max fVCO_OUT = 500 MHz - 0.55 0.70 fVCO_OUT = 600 MHz - 0.65 0.80 fVCO_OUT = 1000 MHz - 0.95 1.20 Unit mA 1. Based on test during characterization. 5.3.15 MIPI D-PHY regulator characteristics The parameters given in Table 48 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 17. Table 48. DSI regulator characteristics(1) Symbol Conditions Min Typ Max Unit 1.2 V internal voltage on VDD12DSI - 1.15 1.20 1.30 V CEXT External capacitor on VCAPDSI - 1.1 2.2 3.3 F ESR External Serial Resistor - 0 25 600 m - 100 120 125 A Ultra Low Power Mode (Reg. ON + PLL OFF) - 290 600 Stop State (Reg. ON + PLL OFF) - 290 600 10 MHz escape clock (Reg. ON + PLL OFF) - 4.3 5.0 20 MHz escape clock (Reg. ON + PLL OFF) - 4.3 5.0 300 Mbps - 1 data lane (Reg. ON + PLL ON) - 8.0 8.8 300 Mbps - 2data lane (Reg. ON + PLL ON) - 11.4 12.5 500 Mbps - 1 data lane (Reg. ON + PLL ON) - 13.5 14.7 500 Mbps - 2data lane (Reg. ON + PLL ON) - 18.0 19.6 500 Mbps - 2data lane (Reg. ON + PLL ON) - 21.4 23.3 CEXT = 2.2 F - 110 - CEXT = 3.3 F - - 160 External capacitor load at start - 60 200 VDD12DSI Parameter IDDDSIREG Regulator power consumption IDDDSI IDDDSILP IDDDSIHS DSI system (regulator, PLL and D-PHY) current consumption on VDDDSI DSI system current consumption on VDDDSI in LP mode communication(2) DSI system (regulator, PLL and D-PHY) current consumption on VDDDSI in HS mode communication(3) DSI system (regulator, PLL and D-PHY) current consumption on VDDDSI in HS mode with CLK like payload tWAKEUP Startup delay IINRUSH Inrush current on VDDDSI A mA mA s mA 1. Based on test during characterization. 2. Values based on an average traffic in LP Command Mode. 3. Values based on an average traffic (3/4 HS traffic & 1/4 LP) in Video Mode. DocID028010 Rev 4 127/217 190 Electrical characteristics 5.3.16 STM32F479xx Memory characteristics Flash memory The characteristics are given at TA = -40 to 105 C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Table 49. Flash memory characteristics Symbol IDD Parameter Supply current Conditions Min Typ Max Write / Erase 8-bit mode, VDD = 1.7 V - 5 - Write / Erase 16-bit mode, VDD = 2.1 V - 8 - Write / Erase 32-bit mode, VDD = 3.3 V - 12 - Unit mA Table 50. Flash memory programming Symbol tprog Parameter Word programming time tERASE16KB Sector (16 KB) erase time tERASE64KB Sector (64 KB) erase time tERASE128KB Sector (128 KB) erase time 128/217 Conditions Min(1) Typ Max(1) Unit Program/erase parallelism (PSIZE) = x 8/16/32 - 16 100(2) Program/erase parallelism (PSIZE) = x 8 - 400 800 Program/erase parallelism (PSIZE) = x 16 - 300 600 Program/erase parallelism (PSIZE) = x 32 - 250 500 Program/erase parallelism (PSIZE) = x 8 - 1200 2400 Program/erase parallelism (PSIZE) = x 16 - 700 1400 Program/erase parallelism (PSIZE) = x 32 - 550 1100 Program/erase parallelism (PSIZE) = x 8 - 2 4 Program/erase parallelism (PSIZE) = x 16 - 1.3 2.6 Program/erase parallelism (PSIZE) = x 32 - 1 2 DocID028010 Rev 4 s ms ms s STM32F479xx Electrical characteristics Table 50. Flash memory programming (continued) Symbol tME tBE Vprog Parameter Mass erase time Bank erase time Programming voltage Conditions Min(1) Typ Max(1) Unit Program/erase parallelism (PSIZE) = x 8 - 16 32 Program/erase parallelism (PSIZE) = x 16 - 11 22 Program/erase parallelism (PSIZE) = x 32 - 8 16 Program/erase parallelism (PSIZE) = x 8 - 16 32 Program/erase parallelism (PSIZE) = x 16 - 11 22 Program/erase parallelism (PSIZE) = x 32 - 8 16 32-bit program operation 2.7 - 3.6 16-bit program operation 2.1 - 3.6 8-bit program operation 1.7 - 3.6 s V 1. Based on test during characterization. 2. The maximum programming time is measured after 100K erase operations. Table 51. Flash memory programming with VPP Symbol Parameter tprog Double word programming tERASE16KB Sector (16 KB) erase time tERASE64KB Sector (64 KB) erase time tERASE128KB Sector (128 KB) erase time Conditions Min(1) Typ Max(1) Unit - 16 100(2) s - 230 - - 490 - - 875 - - 6.9 - s s TA = 0 to +40 C VDD = 3.3 V VPP = 8.5 V ms tME Mass erase time tBE Bank erase time - - 6.9 - Vprog Programming voltage - 2.7 - 3.6 VPP VPP voltage range - 7 - 9 IPP Minimum current sunk on the VPP pin - 10 - - mA Cumulative time during which VPP is applied - - - 1 hour tVPP(3) V 1. Guaranteed by design. 2. The maximum programming time is measured after 100K erase operations. 3. VPP should only be connected during programming/erasing. DocID028010 Rev 4 129/217 190 Electrical characteristics STM32F479xx Table 52. Flash memory endurance and data retention Value Symbol NEND tRET Parameter Endurance Data retention Conditions TA = -40 to +85 C (6 suffix versions) TA = -40 to +105 C (7 suffix versions) 10 1 kcycle(2) at TA = 85 C 30 1 kcycle (2) 10 kcycles Unit Min(1) at TA = 105 C 10 (2) 20 at TA = 55 C kcycles Years 1. Based on test during characterization. 2. Cycling performed over the whole temperature range. 5.3.17 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: * Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. * FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in Table 53. They are based on the EMS levels and classes defined in application note AN1709. Table 53. EMS characteristics Symbol Parameter Conditions Level/Class VFESD VDD = 3.3 V, TFBGA216, Voltage limits to be applied on any I/O pin TA = +25 C, fHCLK = 168 MHz, to induce a functional disturbance conforming to IEC 61000-4-2 2B VEFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance VDD = 3.3 V, TFBGA216, TA = +25 C, fHCLK = 168 MHz, conforming to IEC 61000-4-2 4A Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. 130/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Software recommendations The software flowchart must include the management of runaway conditions such as: * Corrupted program counter * Unexpected reset * Critical Data corruption (control registers...) Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC? code, is running. This emission test is compliant with SAE IEC61967-2 standard which specifies the test board and the pin loading. Table 54. EMI characteristics Symbol Parameter SEMI 5.3.18 Peak level Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 8/168 MHz 8/180 MHz 0.1 to 30 MHz VDD = 3.3 V, TA = 25 C, TFBGA216 30 to 130 MHz package, conforming to SAE J1752/3 EEMBC, ART ON, all peripheral clocks 130 MHz to 1GHz enabled, clock dithering disabled. SAE EMI Level 0.1 to 30 MHz VDD = 3.3 V, TA = 25 C, TFBGA216 30 to 130 MHz package, conforming to SAE J1752/3 EEMBC, ART ON, all peripheral clocks 130 MHz to 1GHz enabled, clock dithering enabled SAE EMI level 2 2 4 1 10 10 3 3 5 -10 3 -15 8 0 2 2 dBV - dBV - Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts x (n+1) supply pins). This test conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESD S5.3.1 standards. DocID028010 Rev 4 131/217 190 Electrical characteristics STM32F479xx Table 55. ESD absolute maximum ratings Symbol Ratings Conditions Class VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 C conforming to ANSI/ESDA/JEDEC JS-001 2 Electrostatic discharge voltage VESD(CDM) (charge device model) TA = +25 C conforming to ANSI/ESD S5.3.1, LQFP176, LQFP208, UFBGA169, UFBGA176, TFBGA216 and WLCSP148 packages Maximum Unit value(1) 2000 V C3 250 1. Guaranteed based on test during characterization. Static latchup Two complementary static tests are required on six parts to assess the latchup performance: * A supply overvoltage is applied to each power supply pin * A current injection is applied to each input, output and configurable I/O pin These tests are compliant with EIA/JESD 78A IC latchup standard. Table 56. Electrical sensitivities(1) Symbol LU Parameter Static latch-up class Conditions TA = +105 C conforming to JESD78A Class II level A 1. MSV on PA4 and PA5 is 5 V, versus 5.4 V on all IOs. 5.3.19 I/O current injection characteristics As a general rule, current injection to the I/O pins, due to external voltage below VSS or above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product operation. However, in order to give an indication of the robustness of the microcontroller in cases when abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during device characterization. Functional susceptibility to I/O current injection While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures. The failure is indicated by an out of range parameter: ADC error above a certain limit (>5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of - 5 A/+0 A range), or other functional failure (for example reset, oscillator frequency deviation). Negative induced leakage current is caused by negative injection and positive induced leakage current by positive injection. The test results are given in Table 57. 132/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 57. I/O current injection susceptibility(1) Functional susceptibility Symbol IINJ Description Negative injection Positive injection Injected current on BOOT0 and NRST pins -0 NA Injected current on DSIHOST_D0P, DSIHOST_D0N, DSIHOST_D1P, DSIHOST_D0N, DSIHOST_CKP, DSIHOST_CKN pins -0 0 Injected current on PA0 and PC0 pins -0 NA Injected current on any other FT pin -5 NA Injected current on any other pin -5 +5 Unit mA 1. NA = not applicable. Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. 5.3.20 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 58 are derived from tests performed under the conditions summarized in Table 17. All I/Os are CMOS and TTL compliant. Table 58. I/O static characteristics Symbol VIL Parameter Conditions Min Typ FT, TTa and NRST I/O input low level voltage 1.7 VVDD3.6 V - - 1.75 VVDD 3.6 V, -40 CTA 105 C - - 1.7 VVDD 3.6 V, 0 CTA 105 C - BOOT0 I/O input low level voltage FT, TTa and NRST I/O input high level voltage(5) VIH BOOT0 I/O input high level voltage 1.7 VVDD3.6 V 1.75 VVDD 3.6 V, -40 CTA 105 C 1.7 VVDD 3.6 V, 0 CTA 105 C Max Unit 0.35VDD - 0.04(1) 0.3VDD(2) 0.1VDD+0.1(1) 0.45VDD+0.3(1) 0.7VDD(2) 0.17VDD+0.7(1) DocID028010 Rev 4 V - - - - 133/217 190 Electrical characteristics STM32F479xx Table 58. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max 1.7 VVDD3.6 V 10%VDD(3) - - 0.1 - - VSS VIN VDD - - 1 VIN = 5 V - - 3 30 40 50 PA10/PB12 (OTG_FS_ID, OTG_HS_ID) 7 10 14 All pins except for PA10/PB12 (OTG_FS_ID, OTG_HS_ID) 30 40 50 7 10 14 - 5 - FT, TTa and NRST I/O input hysteresis VHYS BOOT0 I/O input hysteresis Ilkg RPU RPD CIO(8) I/O input leakage current (4) I/O FT input leakage current (5) Weak pull-up equivalent resistor(6) Weak pulldown equivalent resistor(7) All pins except for PA10/PB12 (OTG_FS_ID, OTG_HS_ID) 1.75 VVDD 3.6 V, - 40 CTA 105 C 1.7 VVDD 3.6 V, 0 CTA 105 C V k VIN = VDD - 1. Guaranteed by design. 2. Tested in production. 3. With a minimum of 200 mV. 4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 57 5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 57 6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance is minimum (~10% order). 7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the series resistance is minimum (~10% order). 8. Hysteresis voltage between Schmitt trigger switching levels. Based on test during characterization. 134/217 A VIN = VSS PA10/PB12 (OTG_FS_ID, OTG_HS_ID) I/O pin capacitance Unit DocID028010 Rev 4 pF STM32F479xx Electrical characteristics All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements for FT I/Os is shown in Figure 39. Figure 39. FT I/O input characteristics 9,/9,+ 9 ' 9' LQ P ,+ W9 HQ P 77/UHTXLUHPHQW 9,+PLQ 9 '' 9 UH L TX UH 26 Q LR W XF G UR S LQ G Q VLJ H ' OD PX VL RQ HG V %D Q WLR Q PL 9,+ V WH V 7H &0 $UHDQRW GHWHUPLQHG , QV9 XODWLR [ /PD ' 9' VLP VLJQ Q'H HGR 77/UHTXLUHPHQW9,/PD[ 9 7HVWHGLQSURGXFWLRQ&026UHTXLUHPHQW9,/PD[ 9'' %DV 9'' 9 069 Output driving current The GPIOs (general purpose input/outputs) can sink or source up to 8 mA, and sink or source up to 20 mA (with a relaxed VOL/VOH) except PC13, PC14, PC15 and PI8 which can sink or source up to 3mA. When using the PC13 to PC15 and PI8 GPIOs in output mode, the speed should not exceed 2 MHz with a maximum load of 30 pF. In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in Section 5.2. In particular: * The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating IVDD (see Table 15). * The sum of the currents sunk by all the I/Os on VSS plus the maximum Run consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating IVSS (see Table 15). DocID028010 Rev 4 135/217 190 Electrical characteristics STM32F479xx Output voltage levels Unless otherwise specified, the parameters given in Table 59 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. All I/Os are CMOS and TTL compliant. Table 59. Output voltage characteristics Symbol Parameter VOL(1) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin VOL (1) Output low level voltage for an I/O pin VOH (3) Output high level voltage for an I/O pin VOL(1) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin VOL(1) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin VOL(1) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin Conditions Min Max - 0.4 VDD - 0.4 - - 0.4 2.4 - - 1.3(4) (2) CMOS port IIO = +8 mA 2.7 V VDD 3.6 V TTL port(2) IIO =+ 8mA 2.7 V VDD 3.6 V IIO = +20 mA 2.7 V VDD 3.6 V IIO = +6 mA 1.8 V VDD 3.6 V IIO = +4 mA 1.7 V VDD 3.6V VDD -1.3(4) Unit V - - 0.4(4) VDD -0.4(4) - - 0.4(5) VDD -0.4(5) - 1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 15. and the sum of IIO (I/O ports and control pins) must not exceed IVSS. 2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52. 3. The IIO current sourced by the device must always respect the absolute maximum rating specified in Table 15 and the sum of IIO (I/O ports and control pins) must not exceed IVDD. 4. Based on characterization data. 5. Guaranteed by design. Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 40 and Table 60, respectively. Unless otherwise specified, the parameters given in Table 60 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 17. 136/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 60. I/O AC characteristics(1)(2) OSPEEDRy [1:0] bit value(1) Symbol fmax(IO)out Parameter Maximum frequency (3) 00 tf(IO)out/ tr(IO)out fmax(IO)out Output high to low level fall time and output low to high level rise time Maximum frequency(3) 01 tf(IO)out/ tr(IO)out fmax(IO)out Output high to low level fall time and output low to high level rise time Maximum frequency(3) 10 tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time Conditions Min Typ Max CL = 50 pF, VDD 2.7 V - - 4 CL = 50 pF, VDD 1.7 V - - 2 CL = 10 pF, VDD 2.7 V - - 8 CL = 10 pF, VDD 1.8 V - - 4 CL = 10 pF, VDD 1.7 V - - 3 CL = 50 pF, VDD = 1.7 V to 3.6 V - - 100 CL = 50 pF, VDD 2.7 V - - 25 CL = 50 pF, VDD 1.8 V - - 12.5 CL = 50 pF, VDD 1.7 V - - 10 CL = 10 pF, VDD 2.7 V - - 50 CL = 10 pF, VDD 1.8 V - - 20 CL = 10 pF, VDD 1.7 V - - 12.5 CL = 50 pF, VDD 2.7 V - - 10 CL = 10 pF, VDD 2.7 V - - 6 CL = 50 pF, VDD 1.7 V - - 20 CL = 10 pF, VDD 1.7 V - - 10 CL = 40 pF, VDD 2.7 V - - 50(4) CL = 10 pF, VDD 2.7 V - - 100(4) CL = 40 pF, VDD 1.7 V - - 25 CL = 10 pF, VDD 1.8 V - - 50 CL = 10 pF, VDD 1.7 V - - 42.5 CL = 40 pF, VDD 2.7 V - - 6 CL = 10 pF, VDD 2.7 V - - 4 CL = 40 pF, VDD 1.7 V - - 10 CL = 10 pF, VDD 1.7 V - - 6 DocID028010 Rev 4 Unit MHz ns MHz ns MHz ns 137/217 190 Electrical characteristics STM32F479xx Table 60. I/O AC characteristics(1)(2) (continued) OSPEEDRy [1:0] bit value(1) Symbol fmax(IO)out Parameter Conditions Maximum frequency(3) 11 tf(IO)out/ tr(IO)out - tEXTIpw Output high to low level fall time and output low to high level rise time Min Typ Max CL = 30 pF, VDD 2.7 V - - 100(4) CL = 30 pF, VDD 1.8 V - - 50 CL = 30 pF, VDD 1.7 V - - 42.5 CL = 10 pF, VDD 2.7 V - - 180(4) CL = 10 pF, VDD 1.8 V - - 100 CL = 10 pF, VDD 1.7 V - - 72.5 CL = 30 pF, VDD 2.7 V - - 4 CL = 30 pF, VDD 1.8 V - - 6 CL = 30 pF, VDD 1.7 V - - 7 CL = 10 pF, VDD 2.7 V - - 2.5 CL = 10 pF, VDD 1.8 V - - 3.5 CL = 10 pF, VDD 1.7 V - - 4 10 - - Pulse width of external signals detected by the EXTI controller - Unit MHz ns ns 1. Guaranteed by design. 2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F4xx reference manual for a description of the GPIOx_SPEEDR GPIO port output speed register. 3. The maximum frequency is defined in Figure 40. 4. For maximum frequencies above 50 MHz and VDD > 2.4 V, the compensation cell should be used. Figure 40. I/O AC characteristics definition (;7(51$/ 287387 21&/ WU ,2 RXW WI ,2 RXW 7 0D[LPXPIUHTXHQF\LVDFKLHYHGLI WUWI 7DQGLIWKHGXW\F\FOHLV ZKHQORDGHGE\&/VSHFLILHGLQWKHWDEOH,2$&FKDUDFWHULVWLFV 138/217 DocID028010 Rev 4 DLG STM32F479xx 5.3.21 Electrical characteristics NRST pin characteristics The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up resistor, RPU (see Table 58). Unless otherwise specified, the parameters given in Table 61 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 17. Table 61. NRST pin characteristics Symbol Parameter Conditions Min Typ Max Unit RPU Weak pull-up equivalent resistor(1) VIN = VSS 30 40 50 k - - - 100 VDD > 2.7 V 300 - - Internal Reset source 20 - - VF(NRST) (2) NRST Input filtered pulse VNF(NRST)(2) NRST Input not filtered pulse TNRST_OUT Generated reset pulse duration ns s 1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance must be minimum (~10% order). 2. Guaranteed by design. Figure 41. Recommended NRST pin protection 9'' ([WHUQDO UHVHWFLUFXLW 1567 538 ,QWHUQDO5HVHW )LOWHU ) 670) DLF 1. The reset network protects the device against parasitic resets. 2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in Table 61. Otherwise the reset is not taken into account by the device. DocID028010 Rev 4 139/217 190 Electrical characteristics 5.3.22 STM32F479xx TIM timer characteristics The parameters given in Table 62 are guaranteed by design. Refer to Section 5.3.20 for details on the input/output alternate function characteristics (output compare, input capture, external clock, PWM output). Table 62. TIMx characteristics(1)(2) Symbol tres(TIM) fEXT ResTIM tMAX_COUNT Parameter Timer resolution time Conditions(3) Min Max Unit AHB/APBx prescaler=1 or 2 or 4, fTIMxCLK = 180 MHz 1 - tTIMxCLK AHB/APBx prescaler>4, fTIMxCLK = 90 MHz 1 - tTIMxCLK 0 fTIMxCLK/2 MHz - 16/32 bit - 65536 x 65536 tTIMxCLK Timer external clock frequency on CH1 to CH4 f TIMxCLK = 180 MHz Timer resolution Maximum possible count with 32-bit counter 1. TIMx is used as a general term to refer to the TIM1 to TIM12 timers. 2. Guaranteed by design. 3. The maximum timer frequency on APB1 or APB2 is up to 180 MHz, by setting the TIMPRE bit in the RCC_DCKCFGR register, if APBx prescaler is 1 or 2 or 4, then TIMxCLK = HCKL, otherwise TIMxCLK = 4x PCLKx. 5.3.23 Communications interfaces I2C interface characteristics The I2C interface meets the timings requirements of the I2C-bus specification and user manual rev. 03 for: * Standard-mode (Sm): with a bit rate up to 100 kbit/s * Fast-mode (Fm): with a bit rate up to 400 kbit/s. The I2C timings requirements are guaranteed by design when the I2C peripheral is properly configured (refer to RM0386 reference manual). The SDA and SCL I/O requirements are met with the following restrictions: the SDA and SCL I/O pins are not "true" open-drain. When configured as open-drain, the PMOS connected between the I/O pin and VDD is disabled, but is still present. Refer to Section 5.3.20 for more details on the I2C I/O characteristics. All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog filter characteristics: Table 63. I2C analog filter characteristics(1) 140/217 Symbol Parameter Min Max Unit tAF Maximum pulse width of spikes that are suppressed by the analog filter 50(2) 150(3) ns DocID028010 Rev 4 STM32F479xx Electrical characteristics 1. Guaranteed based on test during characterization. 2. Spikes with widths below tAF(min) are filtered. 3. Spikes with widths above tAF(max) are not filtered SPI interface characteristics Unless otherwise specified, the parameters given in Table 64 for the SPI interface are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C = 30 pF * Measurement points are done at CMOS levels: 0.5 VDD Refer to Section 5.3.20 for more details on the input/output alternate function characteristics (NSS, SCK, MOSI, MISO for SPI). Table 64. SPI dynamic characteristics(1) Symbol fSCK 1/tc(SCK) Duty(SCK) Parameter SPI clock frequency Conditions Min Typ Max Master mode, 2.7 VVDD3.6 V, SPI1,4,5,6, - - 45 Master mode, 1.71 VVDD3.6 V, SPI1,4,5,6 - - 22.5(2) Master transmitter mode, 1.7 VVDD3.6 V, SPI1,4,5,6 - - 45 Slave full duplex mode, 2.7 VVDD3.6 V, SPI1,4,5,6 - - 22.5 Slave transmitter mode, 1.71 VVDD3.6 V, SPI1,4,5,6 - - 33 Slave transmitter mode, 2.7 VVDD3.6 V, SPI1,4,5,6 - - 45 Slave mode, 1.71 VVDD3.6 V, SPI2,3 - - 22.5 30 50 70 Duty cycle of SPI clock Slave mode frequency DocID028010 Rev 4 Unit MHz % 141/217 190 Electrical characteristics STM32F479xx Table 64. SPI dynamic characteristics(1) (continued) Symbol Parameter tw(SCKH) tw(SCKL) SCK high and low time Master mode, SPI presc = 2 tsu(NSS) NSS setup time Slave mode, SPI presc = 2 4TPCLK th(NSS) NSS hold time Slave mode, SPI presc = 2 2TPCLK tsu(MI) tsu(SI) th(MI) th(SI) Data input setup time Data input hold time Conditions Min Typ Max TPCLK - 1.5 TPCLK TPCLK+1.5 - - Master mode 2 - - Slave mode 3 - - Master mode 4 - - Slave mode 2 - - ta(SO) Data output access time Slave mode, SPI presc = 2 7 - 21 tdis(SO) Data output disable time Slave mode 5 - 12 Slave mode (after enable edge), 2.7V VDD 3.6V - 11 15 Slave mode (after enable edge), 1.71 VVDD3.6 V - 11 11.5 tv(SO) Data output valid time th(SO) Data output hold time Slave mode (after enable edge) 6 - - tv(MO) Data output valid time Master mode (after enable edge) - 4.5 5 th(MO) Data output hold time Master mode (after enable edge) 2 - - Unit ns 1. Guaranteed based on test during characterization. 2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into SCK low or high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master having tsu(MI) = 0 while Duty(SCK) = 50% 142/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Figure 42. SPI timing diagram - slave mode and CPHA = 0 NSS input tc(SCK) th(NSS) SCK Input tSU(NSS) CPHA= 0 CPOL=0 tw(SCKH) tw(SCKL) CPHA= 0 CPOL=1 tv(SO) ta(SO) MISO OUT P UT tr(SCK) tf(SCK) th(SO) MS B O UT BI T6 OUT tdis(SO) LSB OUT tsu(SI) MOSI I NPUT B I T1 IN M SB IN LSB IN th(SI) ai14134c Figure 43. SPI timing diagram - slave mode and CPHA = 1(1) 166LQSXW 6&.LQSXW W68 166 &3+$ &32/ &3+$ &32/ WZ 6&.+ WZ 6&./ WK 62 WY 62 WD 62 0,62 287387 06%287 %,7287 WU 6&. WI 6&. WGLV 62 /6%287 WK 6, WVX 6, 026, ,1387 WK 166 WF 6&. 06%,1 %,7,1 /6%,1 DLE DocID028010 Rev 4 143/217 190 Electrical characteristics STM32F479xx Figure 44. SPI timing diagram - master mode(1) High NSS input SCK Input SCK Input tc(SCK) CPHA= 0 CPOL=0 CPHA= 0 CPOL=1 CPHA=1 CPOL=0 CPHA=1 CPOL=1 tsu(MI) MISO INP UT tw(SCKH) tw(SCKL) MS BIN tr(SCK) tf(SCK) BI T6 IN LSB IN th(MI) MOSI OUTUT M SB OUT tv(MO) B I T1 OUT LSB OUT th(MO) ai14136 144/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics I2S interface characteristics Unless otherwise specified, the parameters given in Table 65 for the I2S interface are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C = 30 pF * Measurement points are done at CMOS levels: 0.5 VDD Refer to Section 5.3.20 for more details on the input/output alternate function characteristics (CK, SD, WS). Table 65. I2S dynamic characteristics(1) Symbol Parameter fMCK I2S Main clock output fCK I2S clock frequency DCK Conditions Min Max 256x8K 256xFs(2) Master data - 64xFs Slave data - 64xFs 30 70 - I2S clock frequency duty cycle Slave receiver tv(WS) WS valid time Master mode 0 5 th(WS) WS hold time Master mode 0 - Slave mode 3.5 - tsu(WS) WS setup time Slave mode PCM short pulse mode(3) 3.5 - Slave mode 0.5 - th(WS) WS hold time Slave mode PCM short pulse mode(3) 1 - Master receiver 5 - Slave receiver 1.5 - Master receiver 5 - Slave receiver 1.5 - Slave transmitter (after enable edge) - 19 Master transmitter (after enable edge) - 2.50 Slave transmitter (after enable edge) 5 - Master transmitter (after enable edge) 0 - tsu(SD_MR) tsu(SD_SR) th(SD_MR) th(SD_SR) tv(SD_ST) tv(SD_MT) th(SD_ST) th(SD_MT) Data input setup time Data input hold time Data output valid time Data output hold time Unit MHz % ns 1. Guaranteed based on test during characterization. 2. 128xFs maximum is 24.756 MHz (APB1 Maximum frequency). 3. Measurement done with respect to I2S_CK rising edge. Note: Refer to the I2S section of RM0386 reference manual for more details on the sampling frequency (FS). fMCK, fCK, and DCK values reflect only the digital peripheral behavior, source clock precision might slightly change the values. The values of these parameters might be slightly impacted by the source clock precision. DCK depends mainly on the value of ODD bit. The digital DocID028010 Rev 4 145/217 190 Electrical characteristics STM32F479xx contribution leads to a minimum value of (I2SDIV/(2*I2SDIV+ODD) and a maximum value of (I2SDIV+ODD)/(2*I2SDIV+ODD). FS maximum value is supported for each mode/condition. Figure 45. I2S slave timing diagram (Philips protocol)(1) CK Input tc(CK) CPOL = 0 CPOL = 1 tw(CKH) th(WS) tw(CKL) WS input tv(SD_ST) tsu(WS) SDtransmit LSB transmit(2) MSB transmit Bitn transmit tsu(SD_SR) LSB receive(2) SDreceive th(SD_ST) LSB transmit th(SD_SR) MSB receive Bitn receive LSB receive ai14881b 1. .LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte. Figure 46. I2S master timing diagram (Philips protocol)(1) tf(CK) tr(CK) CK output tc(CK) CPOL = 0 tw(CKH) CPOL = 1 tv(WS) th(WS) tw(CKL) WS output tv(SD_MT) SDtransmit LSB transmit(2) MSB transmit LSB receive(2) LSB transmit th(SD_MR) tsu(SD_MR) SDreceive Bitn transmit th(SD_MT) MSB receive Bitn receive LSB receive ai14884b 1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte. 146/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics SAI characteristics Unless otherwise specified, the parameters given in Table 66 for SAI are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C=30 pF * Measurement points are performed at CMOS levels: 0.5 VDD Refer to Section 5.3.20 for more details on the input/output alternate function characteristics (SCK,SD,WS). Table 66. SAI characteristics(1) Symbol Parameter Conditions Min Max fMCKL SAI Main clock output - 256 x 8K 256xFs fCK SAI clock frequency(2) Master data: 32 bits - 128xFs(3) Slave data: 32 bits - 128xFs Master mode, 2.7V VDD 3.6V - 17 Master mode, 1.71V VDD 3.6V - 23 tv(FS) FS valid time tsu(FS) FS setup time Slave mode 10 - th(FS) FS hold time Slave mode 0 - Master receiver 1 - Slave receiver 2 - Master receiver 6 - Slave receiver 1 - Slave transmitter (after enable edge), 2.7V VDD 3.6V - 14 Slave transmitter (after enable edge), 1.71V VDD 3.6V - 23 Slave transmitter (after enable edge) 9 - Master transmitter (after enable edge), 2.7V VDD 3.6V - 20 Master transmitter (after enable edge), 1.71V VDD 3.6V - 26 Master transmitter (after enable edge) 10 - tsu(SD_MR) tsu(SD_SR) th(SD_MR) th(SD_SR) th(SD_B_ST) th(SD_B_ST) tv(SD_A_MT) th(SD_A_MT) Data input setup time Data input hold time Data output valid time Data output hold time Data output valid time Data output hold time Unit MHz ns 1. Guaranteed based on test during characterization. 2. APB clock frequency must be at least twice SAI clock frequency. 3. With Fs = 192 kHz. DocID028010 Rev 4 147/217 190 Electrical characteristics STM32F479xx Figure 47. SAI master timing waveforms F3#+ 3!)?3#+?8 TH&3 3!)?&3?8 OUTPUT TV&3 TH3$?-4 TV3$?-4 3!)?3$?8 TRANSMIT 3LOT N 3LOT N TSU3$?-2 TH3$?-2 3!)?3$?8 RECEIVE 3LOT N -36 Figure 48. SAI slave timing waveforms F3#+ 3!)?3#+?8 TW#+(?8 3!)?&3?8 INPUT TW#+,?8 TH&3 TSU&3 TH3$?34 TV3$?34 3!)?3$?8 TRANSMIT 3LOT N TSU3$?32 3!)?3$?8 RECEIVE 3LOT N TH3$?32 3LOT N -36 148/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics USB OTG full speed (FS) characteristics This interface is present in both the USB OTG HS and USB OTG FS controllers. Table 67. USB OTG full speed startup time Symbol Parameter Max Unit tSTARTUP(1) USB OTG full speed transceiver startup time 1 s 1. Guaranteed by design. Table 68. USB OTG full speed DC electrical characteristics Symbol Conditions USB OTG full speed transceiver operating voltage Min.(1) Typ. Max.(1) Unit - 3.0(2) - 3.6 VDI(3) Differential input sensitivity I(USB_FS_DP/DM, USB_HS_DP/DM) 0.2 - - VCM(3) Differential common mode range Includes VDI range 0.8 - 2.5 VSE(3) Single ended receiver threshold - 1.3 - 2.0 VOL Static output level low RL of 1.5 k to 3.6 V(4) - - 0.3 2.8 - 3.6 17 21 24 0.65 1.1 2.0 VDD Input levels Parameter Output levels RPD RPU VOH Static output level high RL of 15 k to PA11, PA12, PB14, PB15 (USB_FS_DP/DM, USB_HS_DP/DM) PA9, PB13 (OTG_FS_VBUS, OTG_HS_VBUS) VSS(4) V VIN = VDD k PA12, PB15 (USB_FS_DP, USB_HS_DP) VIN = VSS 1.5 1.8 2.1 PA9, PB13 (OTG_FS_VBUS, OTG_HS_VBUS) VIN = VSS 0.25 0.37 0.55 1. All the voltages are measured from the local ground potential. 2. The USB OTG full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed electrical characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range. 3. Guaranteed by design. 4. RL is the load connected on the USB OTG full speed drivers. Note: When VBUS sensing feature is enabled, PA9 and PB13 should be left at their default state (floating input), not as alternate function. A typical 200 A current consumption of the sensing block (current to voltage conversion to determine the different sessions) can be observed on PA9 and PB13 when the feature is enabled. DocID028010 Rev 4 149/217 190 Electrical characteristics STM32F479xx Figure 49. USB OTG full speed timings: definition of data signal rise and fall time Crossover points Differen tial Data L ines VCRS VS S tr tf ai14137 Table 69. USB OTG full speed electrical characteristics(1) Driver characteristics Symbol tr tf trfm Parameter Rise time(2) Fall time(2) Conditions Min Max CL = 50 pF 4 20 CL = 50 pF 4 20 tr/tf 90 110 % - 1.3 2.0 V Driving high or low 28 44 Rise/ fall time matching VCRS Output signal crossover voltage ZDRV Output driver impedance(3) Unit ns 1. Guaranteed by design. 2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB Specification - Chapter 7 (version 2.0). 3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching impedance is included in the embedded driver. USB high speed (HS) characteristics Unless otherwise specified, the parameters given in Table 72 for ULPI are derived from tests performed under the ambient temperature, fHCLK frequency summarized in Table 71 and VDD supply voltage conditions summarized in Table 70, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 11, unless otherwise specified * Capacitive load C = 20 pF / 15 pF, unless otherwise specified * Measurement points are done at CMOS levels: 0.5 VDD. Refer to Section 5.3.20 for more details on the input/output characteristics. Table 70. USB HS DC electrical characteristics Symbol Input level Parameter VDD USB OTG HS operating voltage 1. All the voltages are measured from the local ground potential. 150/217 DocID028010 Rev 4 Min.(1) Max.(1) Unit 1.7 3.6 V STM32F479xx Electrical characteristics Table 71. USB HS clock timing parameters(1) Symbol Parameter Min Typ Max - fHCLK value to guarantee proper operation of USB HS interface 30 - - FSTART_8BIT Frequency (first transition) 54 60 66 FSTEADY Frequency (steady state) 500 ppm 59.97 60 60.03 DSTART_8BIT Duty cycle (first transition) 40 50 60 DSTEADY Duty cycle (steady state) 500 ppm 49.975 50 50.025 tSTEADY Time to reach the steady state frequency and duty cycle after the first transition - - 1.4 Peripheral - - 5.6 Host - - - - - - tSTART_DEV tSTART_HOST Clock startup time after the de-assertion of SuspendM 8-bit 10% 8-bit 10% PHY preparation time after the first transition of the input clock tPREP Unit MHz % ms ms s 1. Guaranteed by design. Figure 50. ULPI timing diagram #LOCK #ONTROL )N 5,0)?$)2 5,0)?.84 T3# T(# T3$ T($ DATA )N BIT T$# #ONTROL OUT 5,0)?340 DATA OUT BIT T$# T$$ AIC DocID028010 Rev 4 151/217 190 Electrical characteristics STM32F479xx Table 72. Dynamic characteristics: USB ULPI(1) Symbol Parameter Conditions Min. Typ. Max. tSC Control in (ULPI_DIR, ULPI_NXT) setup time - 2.0 - - tHC Control in (ULPI_DIR, ULPI_NXT) hold time - 1.5 - - tSD Data in setup time - 1.0 - - tHD Data in hold time - 1.0 - - 2.7 V < VDD < 3.6 V, CL = 20 pF - 7.5 9.0 2.7 V < VDD < 3.6 V, CL = 15 pF and -40 < T < 125C - 7.5 12.0 1.7 V < VDD < 3.6 V, CL = 15 pF and -40 < T < 90C - 7.5 11.5 tDC/tDD Data/control output delay Unit ns 1. Guaranteed based on test during characterization. Ethernet characteristics Unless otherwise specified, the parameters given in Table 73, Table 74 and Table 75 for SMI, RMII and MII are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 10 * Capacitive load C = 30 pF * Measurement points are done at CMOS levels: 0.5 VDD. Refer to Section 5.3.20 for more details on the input/output characteristics. Table 73 gives the list of Ethernet MAC signals for the SMI (station management interface) and Figure 51 shows the corresponding timing diagram. Figure 51. Ethernet SMI timing diagram W0'& (7+B0'& WG 0',2 (7+B0',2 2 WVX 0',2 WK 0',2 (7+B0',2 , 069 152/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 73. Dynamics characteristics: Ethernet MAC signals for SMI(1) Symbol tMDC Parameter MDC cycle time(2.38 MHz) Min Typ Max 400 400 403 Td(MDIO) Write data valid time THCLK - 1 THCLK THCLK + 1.5 tsu(MDIO) Read data setup time 12.5 - - th(MDIO) Read data hold time 0 - - Unit ns 1. Guaranteed based on test during characterization. Table 74 gives the list of Ethernet MAC signals for the RMII and Figure 52 shows the corresponding timing diagram. Figure 52. Ethernet RMII timing diagram RMII_REF_CLK td(TXEN) td(TXD) RMII_TX_EN RMII_TXD[1:0] tsu(RXD) tsu(CRS) tih(RXD) tih(CRS) RMII_RXD[1:0] RMII_CRS_DV ai15667 DocID028010 Rev 4 153/217 190 Electrical characteristics STM32F479xx Table 74. Dynamics characteristics: Ethernet MAC signals for RMII(1) Symbol Parameter Min Typ Max tsu(RXD) Receive data setup time 2.5 - - tih(RXD) Receive data hold time 2.0 - - tsu(CRS) Carrier sense setup time 0.5 - - tih(CRS) Carrier sense hold time 1.5 - - td(TXEN) Transmit enable valid delay time 5.5 6.5 11 td(TXD) Transmit data valid delay time 6.0 6.5 11 Unit ns 1. Guaranteed based on test during characterization. Table 75 gives the list of Ethernet MAC signals for MII and Figure 52 shows the corresponding timing diagram. Figure 53. Ethernet MII timing diagram MII_RX_CLK MII_RXD[3:0] MII_RX_DV MII_RX_ER tsu(RXD) tsu(ER) tsu(DV) tih(RXD) tih(ER) tih(DV) MII_TX_CLK td(TXEN) td(TXD) MII_TX_EN MII_TXD[3:0] ai15668 Table 75. Dynamics characteristics: Ethernet MAC signals for MII(1) Symbol Parameter Min Typ Max tsu(RXD) Receive data setup time 1 - - tih(RXD) Receive data hold time 3 - - tsu(DV) Data valid setup time 0 - - tih(DV) Data valid hold time 2.5 - - tsu(ER) Error setup time 0 - - tih(ER) Error hold time 2 - - td(TXEN) Transmit enable valid delay time 0 7 13 td(TXD) Transmit data valid delay time 0 7 13 1. Guaranteed based on test during characterization. 154/217 DocID028010 Rev 4 Unit ns STM32F479xx Electrical characteristics CAN (controller area network) interface Refer to Section 5.3.20 for more details on the input/output alternate function characteristics (CANx_TX and CANx_RX). 5.3.24 12-bit ADC characteristics Unless otherwise specified, the parameters given in Table 76 are derived from tests performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage conditions summarized in Table 17. Table 76. ADC characteristics Symbol Min Typ Max Power supply 1.7(1) - 3.6 VREF+ Positive reference voltage 1.7(1) - VDDA VREF- Negative reference voltage - 0 - 0.6 15 18 VDDA = 2.4 to 3.6 V 0.6 30 36 fADC = 30 MHz, 12-bit resolution - - 1764 kHz - - - 17 1/fADC - 0 (VSSA or VREFtied to ground) - VREF+ V Details in Equation 1 - - 50 k Sampling switch resistance - - - 6 k Internal sample and hold capacitor - - 4 7 pF - - 0.100 s 1/fADC VDDA fADC fTRIG(2) VAIN RAIN(2) RADC (2)(4) CADC(2) Parameter ADC clock frequency External trigger frequency Conversion voltage range(3) External input impedance Conditions VDDA -VREF+ < 1.2 V VDDA = 1.7(1) to 2.4 V Unit V MHz tlat(2) Injection trigger conversion latency fADC = 30 MHz - - - 3(5) tlatr(2) Regular trigger conversion latency fADC = 30 MHz - - 0.067 s - - 2(5) 1/fADC tS(2) Sampling time fADC = 30 MHz 0.100 - 16 s - 3 - 480 1/fADC tSTAB(2) Power-up time - - 2 3 s DocID028010 Rev 4 155/217 190 Electrical characteristics STM32F479xx Table 76. ADC characteristics (continued) Symbol tCONV(2) Parameter Total conversion time (including sampling time) Conditions Min Typ Max fADC = 30 MHz 12-bit resolution 0.50 - 16.40 fADC = 30 MHz 10-bit resolution 0.43 - 16.34 fADC = 30 MHz 8-bit resolution 0.37 - 16.27 fADC = 30 MHz 6-bit resolution 0.30 - 16.20 Unit s 9 to 492 1/fADC (tS for sampling +n-bit resolution for successive approximation) Sampling rate fS(2) (fADC = 30 MHz, and tS = 3 ADC cycles) 12-bit resolution Single ADC - - 2 12-bit resolution Interleave Dual ADC mode - - 3.75 12-bit resolution Interleave Triple ADC mode - - 6 Msps IVREF+(2) ADC VREF DC current consumption in conversion mode - - 300 500 A IVDDA(2) ADC VDDA DC current consumption in conversion mode - - 1.6 1.8 mA 1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.19.2). 2. Based on test during characterization. 3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA. 4. RADC maximum value is given for VDD=1.7 V, and minimum value for VDD=3.3 V. 5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 76. Equation 1: RAIN max formula R AIN ( k - 0.5 ) - - R ADC = --------------------------------------------------------------N+2 f ADC x C ADC x ln ( 2 ) The formula above (Equation 1) is used to determine the maximum external impedance allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of sampling periods defined in the ADC_SMPR1 register. 156/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 77. ADC static accuracy at fADC = 18 MHz(1) Symbol Parameter Test conditions ET Total unadjusted error EO Offset error EG Gain error ED Differential linearity error EL Integral linearity error fADC =18 MHz VDDA = 1.7 to 3.6 V VREF = 1.7 to 3.6 V VDDA -VREF < 1.2 V Typ Max(2) 3 4 2 3 1 3 1 2 2 3 Unit LSB 1. Better performance could be achieved in restricted VDD, frequency and temperature ranges. 2. Based on test during characterization. Table 78. ADC static accuracy at fADC = 30 MHz(1) a Symbol ET Parameter Test conditions Total unadjusted error EO Offset error EG Gain error ED Differential linearity error EL Integral linearity error fADC = 30 MHz, RAIN < 10 k, VDDA = 2.4 to 3.6 V, VREF = 1.7 to 3.6 V, VDDA -VREF < 1.2 V Typ Max(2) 2 5 1.5 2.5 1.5 3 1 2 1.5 3 Unit LSB 1. Better performance could be achieved in restricted VDD, frequency and temperature ranges. 2. Based on test during characterization. Table 79. ADC static accuracy at fADC = 36 MHz(1) Symbol ET Parameter Test conditions Total unadjusted error EO Offset error EG Gain error ED Differential linearity error EL Integral linearity error fADC =36 MHz, VDDA = 2.4 to 3.6 V, VREF = 1.7 to 3.6 V VDDA -VREF < 1.2 V Typ Max(2) 4 7 2 3 3 6 2 3 3 6 Unit LSB 1. Better performance could be achieved in restricted VDD, frequency and temperature ranges. 2. Based on test during characterization. DocID028010 Rev 4 157/217 190 Electrical characteristics STM32F479xx Table 80. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1) Symbol Parameter Test conditions ENOB Effective number of bits SINAD Signal-to-noise and distortion ratio SNR Signal-to-noise ratio THD Total harmonic distortion fADC =18 MHz VDDA = VREF+= 1.7 V Input Frequency = 20 KHz Temperature = 25 C Min Typ Max Unit 10.3 10.4 - bits 64 64.2 - 64 65 - - 67 - 72 - dB 1. Guaranteed based on test during characterization. Table 81. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1) Symbol Parameter Test conditions ENOB Effective number of bits SINAD Signal-to noise and distortion ratio SNR Signal-to noise ratio THD Total harmonic distortion fADC =36 MHz VDDA = VREF+ = 3.3 V Input Frequency = 20 KHz Temperature = 25 C Min Typ Max Unit 10.6 10.8 - bits 66 67 - 64 68 - - 70 - 72 - dB 1. Guaranteed based on test during characterization. Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in Section 5.3.20 does not affect the ADC accuracy. 158/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Figure 54. ADC accuracy characteristics ;,3" )$%!, 6 2%& OR 6 $$! DEPENDING ON PACKAGE = %' %4 %/ %, %$ , 3")$%!, 6 33! 6$$! AIC 1. See also Table 78. 2. Example of an actual transfer curve. 3. Ideal transfer curve. 4. End point correlation line. 5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO = Offset Error: deviation between the first actual transition and the first ideal one. EG = Gain Error: deviation between the last ideal transition and the last actual one. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. Figure 55. Typical connection diagram using the ADC 670) 9'' 5$,1 9$,1 6DPSOHDQGKROG$'& FRQYHUWHU 97 9 5$'& $,1[ &SDUDVLWLF 97 9 ,/$ ELW FRQYHUWHU & $'& DL 1. Refer to Table 76 for the values of RAIN, RADC and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced. DocID028010 Rev 4 159/217 190 Electrical characteristics STM32F479xx General PCB design guidelines Power supply decoupling should be performed as shown in Figure 56 or Figure 57, depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be ceramic (good quality). They should be placed them as close as possible to the chip. Figure 56. Power supply and reference decoupling (VREF+ not connected to VDDA) 670) 95() )Q) 9''$ )Q) 966$95() 069 1. VREF+ and VREF- inputs are both available on UFBGA176 and TFBGA216. VREF+ is also available on LQFP176 and LQFP208. When VREF+ and VREF- are not available, they are internally connected to VDDA and VSSA. Figure 57. Power supply and reference decoupling (VREF+ connected to VDDA) 670) 95()9''$ )Q) 95()9''$ 069 1. VREF+ and VREF- inputs are both available on UFBGA176 and TFBGA216. VREF+ is also available on LQFP176 and LQFP208. When VREF+ and VREF- are not available, they are internally connected to VDDA and VSSA. 160/217 DocID028010 Rev 4 STM32F479xx 5.3.25 Electrical characteristics Temperature sensor characteristics Table 82. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit VSENSE linearity with temperature - 1 2 C Average slope - 2.5 - mV/C Voltage at 25 C - 0.76 - V tSTART(2) Startup time - 6 10 TS_temp(2) ADC sampling time when reading the temperature (1 C accuracy) 10 - - TL(1) Avg_Slope (1) V25(1) s 1. Based on test during characterization. 2. Guaranteed by design. Table 83. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D TS_CAL2 TS ADC raw data acquired at temperature of 110 C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F 5.3.26 VBAT monitoring characteristics Table 84. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit K R Resistor bridge for VBAT - 50 - Q Ratio on VBAT measurement - 4 - Error on Q -1 - +1 % ADC sampling time when reading the VBAT 1 mV accuracy 5 - - s Er(1) TS_vbat(2)(2) 1. Guaranteed by design. 2. Shortest sampling time can be determined in the application by multiple iterations. 5.3.27 Reference voltage The parameters given in Table 85 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. Table 85. internal reference voltage Symbol VREFINT TS_vrefint(1) VRERINT_s(2) Parameter Internal reference voltage Conditions Min Typ Max Unit -40 C < TA < +105 C 1.18 1.21 1.24 V 10 - - s - 3 5 mV ADC sampling time when reading the internal reference voltage Internal reference voltage spread over the temperature range VDD = 3V 10mV DocID028010 Rev 4 161/217 190 Electrical characteristics STM32F479xx Table 85. internal reference voltage (continued) Symbol Parameter TCoeff(2) tSTART (2) Conditions Min Typ Max Unit Temperature coefficient - 30 50 ppm/C Startup time - 6 10 s 1. Shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design Table 86. Internal reference voltage calibration values Symbol Parameter VREFIN_CAL 5.3.28 Memory address Raw data acquired at temperature of 30 C VDDA = 3.3 V 0x1FFF 7A2A - 0x1FFF 7A2B DAC electrical characteristics Table 87. DAC characteristics Symbol Parameter Min Typ Max Unit Comments - VDDA Analog supply voltage 1.7(1) - 3.6 V VREF+ Reference supply voltage 1.7(1) - 3.6 V VSSA Ground 0 - 0 V - RLOAD(2) Resistive load with buffer ON 5 - - k - RO(2) Impedance output with buffer OFF - - 15 When the buffer is OFF, the Minimum k resistive load between DAC_OUT and VSS to have a 1% accuracy is 1.5 M Capacitive load - - 50 pF DAC_OUT Lower DAC_OUT voltage with buffer ON min(2) 0.2 - - V DAC_OUT Higher DAC_OUT voltage max(2) with buffer ON - - VDDA - 0.2 V DAC_OUT Lower DAC_OUT voltage with buffer OFF min(2) - 0.5 - mV DAC_OUT Higher DAC_OUT voltage max(2) with buffer OFF - - VREF+ - 1LSB V - 170 240 CLOAD(2) IVREF+(4) 162/217 DAC DC VREF current consumption in quiescent mode (Standby mode) A - 50 75 DocID028010 Rev 4 VREF+ VDDA Maximum capacitive load at DAC_OUT pin (when the buffer is ON). It gives the maximum output excursion of the DAC. It corresponds to 12-bit input code (0x0E0) to (0xF1C) at VREF+ = 3.6 V and (0x1C7) to (0xE38) at VREF+ = 1.7 V It gives the maximum output excursion of the DAC. With no load, worst code (0x800) at VREF+ = 3.6 V in terms of DC consumption on the inputs With no load, worst code (0xF1C) at VREF+ = 3.6 V in terms of DC consumption on the inputs STM32F479xx Electrical characteristics Table 87. DAC characteristics (continued) Symbol Min Typ Max Unit Comments - 280 380 A With no load, middle code (0x800) on the inputs - 475 625 A With no load, worst code (0xF1C) at VREF+ = 3.6 V in terms of DC consumption on the inputs Differential non linearity Difference between two consecutive code-1LSB) - - 0.5 LSB Given for the DAC in 10-bit configuration. - - 2 LSB Given for the DAC in 12-bit configuration. - - 1 LSB Given for the DAC in 10-bit configuration. INL(4) Integral non linearity (difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 1023) - - 4 LSB Given for the DAC in 12-bit configuration. - - 10 mV Given for the DAC in 12-bit configuration Offset(4) Offset error (difference between measured value at Code (0x800) and the ideal value = VREF+/2) - - 3 LSB Given for the DAC in 10-bit at VREF+ = 3.6 V - - 12 LSB Given for the DAC in 12-bit at VREF+ = 3.6 V Gain error - - 0.5 % Given for the DAC in 12-bit configuration - 3 6 s CLOAD 50 pF, RLOAD 5 k IDDA(4) DNL(4) Gain error(4) Parameter DAC DC VDDA current consumption in quiescent mode(3) Settling time (full scale: for a 10-bit input code transition between the lowest and the (4) tSETTLING highest input codes when DAC_OUT reaches final value 4LSB THD(4) Total Harmonic Distortion Buffer ON - - - dB CLOAD 50 pF, RLOAD 5 k Update rate(2) Max frequency for a correct DAC_OUT change when small variation in the input code (from code i to i+1LSB) - - 1 MS/s CLOAD 50 pF, RLOAD 5 k Wakeup time from off state tWAKEUP(4) (Setting the ENx bit in the DAC Control register) - 6.5 10 s CLOAD 50 pF, RLOAD 5 k input code between lowest and highest possible ones. Power supply rejection ratio PSRR+ (2) (to VDDA) (static DC measurement) - -67 -40 dB No RLOAD, CLOAD = 50 pF 1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 2.19.2). 2. Guaranteed by design. 3. The quiescent mode corresponds to a state where the DAC maintains a stable output level to ensure that no dynamic consumption occurs. 4. Guaranteed based on test during characterization. DocID028010 Rev 4 163/217 190 Electrical characteristics STM32F479xx Figure 58. 12-bit buffered/non-buffered DAC %XIIHUHG1RQEXIIHUHG'$& %XIIHU 5/ '$&B287[ ELW GLJLWDOWR DQDORJ FRQYHUWHU &/ DL9 1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the DAC_CR register. 5.3.29 FMC characteristics Unless otherwise specified, the parameters given in Tables 88 through 101 for the FMC interface are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 11 * Measurement points are done at CMOS levels: 0.5 VDD Refer to Section 5.3.20 for more details on the input/output characteristics. Asynchronous waveforms and timings Figures 59 through 62 represent asynchronous waveforms, and Tables 88 through 95 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: 164/217 * AddressSetupTime = 0x1 * AddressHoldTime = 0x1 * DataSetupTime = 0x1 (except for asynchronous NWAIT mode , DataSetupTime = 0x5) * BusTurnAroundDuration = 0x0 * Capacitive load CL = 30 pF DocID028010 Rev 4 STM32F479xx Electrical characteristics Figure 59. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms TW.% &-#?.% TV./%?.% T W./% T H.%?./% &-#?./% &-#?.7% TV!?.% &-#?!;= T H!?./% !DDRESS TV",?.% T H",?./% &-#?.",;= T H$ATA?.% T SU$ATA?./% TH$ATA?./% T SU$ATA?.% $ATA &-#?$;= T V.!$6?.% TW.!$6 &-#?.!$6 &-#?.7!)4 TH.%?.7!)4 TSU.7!)4?.% -36 1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used. DocID028010 Rev 4 165/217 190 Electrical characteristics STM32F479xx Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR - read timings(1) Symbol Min Max 2THCLK - 0.5 2 THCLK+0.5 0 1 2THCLK 2THCLK+ 0.5 FMC_NOE high to FMC_NE high hold time 0 - FMC_NEx low to FMC_A valid - 2 th(A_NOE) Address hold time after FMC_NOE high 0 - tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 th(BL_NOE) FMC_BL hold time after FMC_NOE high 0 - tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 2.5 - tw(NE) tv(NOE_NE) tw(NOE) th(NE_NOE) tv(A_NE) Parameter FMC_NE low time FMC_NEx low to FMC_NOE low FMC_NOE low time tsu(Data_NOE) Data to FMC_NOEx high setup time THCLK +2 - th(Data_NOE) Data hold time after FMC_NOE high 0 - th(Data_NE) Data hold time after FMC_NEx high 0 - tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0 FMC_NADV low time - THCLK +1 tw(NADV) Unit ns 1. Based on test during characterization. Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR read - NWAIT timings(1) Symbol Min Max FMC_NE low time 7THCLK+0.5 7THCLK+1 FMC_NWE low time 5THCLK - 1.5 5THCLK +2 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+1.5 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK+1 - tw(NE) tw(NOE) Parameter 1. Based on test during characterization. 166/217 DocID028010 Rev 4 Unit ns STM32F479xx Electrical characteristics Figure 60. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms TW.% &-#?.%X &-#?./% TV.7%?.% TW.7% T H.%?.7% &-#?.7% TV!?.% &-#?!;= TH!?.7% !DDRESS TV",?.% &-#?.",;= TH",?.7% .", TV$ATA?.% TH$ATA?.7% $ATA &-#?$;= T V.!$6?.% &-#?.!$6 TW.!$6 &-#?.7!)4 TH.%?.7!)4 TSU.7!)4?.% -36 1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used. Table 90. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1) Symbol tw(NE) tv(NWE_NE) tw(NWE) th(NE_NWE) tv(A_NE) Parameter FMC_NE low time FMC_NEx low to FMC_NWE low FMC_NWE low time FMC_NWE high to FMC_NE high hold time FMC_NEx low to FMC_A valid th(A_NWE) Address hold time after FMC_NWE high tv(BL_NE) FMC_NEx low to FMC_BL valid Min Max 3THCLK 3THCLK+1 THCLK - 0.5 THCLK+ 0.5 THCLK THCLK+ 0.5 THCLK +1.5 - - 0 THCLK+0.5 - - 1.5 THCLK+0.5 - th(BL_NWE) FMC_BL hold time after FMC_NWE high tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK+ 2 th(Data_NWE) Data hold time after FMC_NWE high THCLK+0.5 - tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0.5 FMC_NADV low time - THCLK+ 0.5 tw(NADV) Unit ns 1. Based on test during characterization. DocID028010 Rev 4 167/217 190 Electrical characteristics STM32F479xx Table 91. Asynchronous non-multiplexed SRAM/PSRAM/NOR write - NWAIT timings(1) Symbol tw(NE) tw(NWE) Parameter Min Max FMC_NE low time 8THCLK+1 8THCLK+2 FMC_NWE low time 6THCLK - 1 6THCLK+2 6THCLK+1.5 - 4THCLK+1 - tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid Unit ns 1. Based on test during characterization. Figure 61. Asynchronous multiplexed PSRAM/NOR read waveforms TW.% &-#? .% TV./%?.% T H.%?./% &-#?./% T W./% &-#?.7% TH!?./% TV!?.% &-#? !;= !DDRESS TV",?.% TH",?./% &-#? .",;= .", TH$ATA?.% TSU$ATA?.% T V!?.% &-#? !$;= TSU$ATA?./% TH$ATA?./% $ATA !DDRESS TH!$?.!$6 T V.!$6?.% TW.!$6 &-#?.!$6 &-#?.7!)4 TH.%?.7!)4 TSU.7!)4?.% -36 168/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 92. Asynchronous multiplexed PSRAM/NOR read timings(1) Symbol tw(NE) tv(NOE_NE) ttw(NOE) th(NE_NOE) tv(A_NE) tv(NADV_NE) tw(NADV) Parameter Min Max 3THCLK - 1 3THCLK+0.5 2THCLK - 0.5 2THCLK THCLK - 1 THCLK+1 FMC_NOE high to FMC_NE high hold time 1 - FMC_NEx low to FMC_A valid - 2 FMC_NEx low to FMC_NADV low 0 2 THCLK - 0.5 THCLK+0.5 FMC_NE low time FMC_NEx low to FMC_NOE low FMC_NOE low time FMC_NADV low time th(AD_NADV) FMC_AD(address) valid hold time after FMC_NADV high) 0 - th(A_NOE) Address hold time after FMC_NOE high THCLK - 0.5 - th(BL_NOE) FMC_BL time after FMC_NOE high 0 - FMC_NEx low to FMC_BL valid - 2 tv(BL_NE) tsu(Data_NE) Data to FMC_NEx high setup time THCLK+1.5 - tsu(Data_NOE) Data to FMC_NOE high setup time THCLK+1 - th(Data_NE) Data hold time after FMC_NEx high 0 - th(Data_NOE) Data hold time after FMC_NOE high 0 - Unit ns 1. Based on test during characterization. Table 93. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1) Symbol tw(NE) tw(NOE) Parameter Min Max FMC_NE low time 8THCLK+0.5 8THCLK+2 FMC_NWE low time 5THCLK - 1 5THCLK +1.5 5THCLK +1.5 - 4THCLK+1 - tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid Unit ns 1. Based on test during characterization. DocID028010 Rev 4 169/217 190 Electrical characteristics STM32F479xx Figure 62. Asynchronous multiplexed PSRAM/NOR write waveforms TW.% &-#? .%X &-#?./% TV.7%?.% TW.7% T H.%?.7% &-#?.7% TH!?.7% TV!?.% &-#? !;= !DDRESS TV",?.% TH",?.7% &-#? .",;= .", T V!?.% T V$ATA?.!$6 !DDRESS &-#? !$;= TH$ATA?.7% $ATA TH!$?.!$6 T V.!$6?.% TW.!$6 &-#?.!$6 &-#?.7!)4 TH.%?.7!)4 TSU.7!)4?.% -36 Table 94. Asynchronous multiplexed PSRAM/NOR write timings(1) Symbol tw(NE) tv(NWE_NE) tw(NWE) th(NE_NWE) tv(A_NE) Parameter Min Max 4THCLK 4THCLK+0.5 THCLK - 1 THCLK+0.5 FMC_NWE low time 2THCLK 2THCLK+0.5 FMC_NWE high to FMC_NE high hold time THCLK - - 0 0.5 1 FMC_NE low time FMC_NEx low to FMC_NWE low FMC_NEx low to FMC_A valid tv(NADV_NE) FMC_NEx low to FMC_NADV low tw(NADV) FMC_NADV low time FMC_AD (address) valid hold time th(AD_NADV) after FMC_NADV high THCLK - 2 - th(A_NWE) Address hold time after FMC_NWE high THCLK - th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK - 2 - - 2 - THCLK +1.5 THCLK +0.5 - tv(BL_NE) FMC_NEx low to FMC_BL valid tv(Data_NADV) FMC_NADV high to Data valid th(Data_NWE) Data hold time after FMC_NWE high 1. Based on test during characterization. 170/217 THCLK - 0.5 THCLK+ 0.5 DocID028010 Rev 4 Unit ns STM32F479xx Electrical characteristics Table 95. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1) Symbol tw(NE) tw(NWE) Parameter Min Max FMC_NE low time 9THCLK 9THCLK+0.5 FMC_NWE low time 7THCLK 7THCLK+2 6THCLK+1.5 - 4THCLK-1 - tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid Unit ns 1. Based on test during characterization. Synchronous waveforms and timings Figures 63 through 66 represent synchronous waveforms and Table 96 through Table 99 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: * BurstAccessMode = FMC_BurstAccessMode_Enable; * MemoryType = FMC_MemoryType_CRAM; * WriteBurst = FMC_WriteBurst_Enable; * CLKDivision = 1; * DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM * CL = 30 pF on data and address lines. CL = 10 pF on FMC_CLK unless otherwise specified. In all timing tables, the THCLK is the HCLK clock period: * For 2.7 V VDD 3.6 V, maximum FMC_CLK = 90 MHz at CL = 30 pF (on FMC_CLK). * For 1.71 V VDD<1.9 V, maximum FMC_CLK = 60 MHz at CL = 10 pF (on FMC_CLK). DocID028010 Rev 4 171/217 190 Electrical characteristics STM32F479xx Figure 63. Synchronous multiplexed NOR/PSRAM read timings "53452. TW#,+ TW#,+ &-#?#,+ $ATA LATENCY TD#,+, .%X, &-#?.%X T D#,+, .!$6, TD#,+( .%X( TD#,+, .!$6( &-#?.!$6 TD#,+, !6 TD#,+( !)6 &-#?!;= TD#,+, ./%, TD#,+( ./%( &-#?./% T D#,+, !$6 &-#?!$;= TD#,+, !$)6 TSU!$6 #,+( !$;= TH#,+( !$6 TSU!$6 #,+( $ TSU.7!)46 #,+( &-#?.7!)4 7!)4#&' B 7!)40/, B &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( TSU.7!)46 #,+( TH#,+( !$6 $ TH#,+( .7!)46 TH#,+( .7!)46 TH#,+( .7!)46 -36 172/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 96. Synchronous multiplexed NOR/PSRAM read timings(1) Symbol Min Max 2THCLK - 1 - - 0 THCLK - td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - tw(CLK) Parameter FMC_CLK period td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0...2) Unit td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16...25) - 0 td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16...25) 0 - td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - THCLK+0.5 td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK - 0.5 - td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 0.5 td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 - tsu(ADV-CLKH) FMC_A/D[15:0] valid data before FMC_CLK high 5 - th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 0 - tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - ns 1. Based on test during characterization. DocID028010 Rev 4 173/217 190 Electrical characteristics STM32F479xx Figure 64. Synchronous multiplexed PSRAM write timings "53452. TW#,+ TW#,+ &-#?#,+ $ATA LATENCY TD#,+, .%X, TD#,+( .%X( &-#?.%X TD#,+, .!$6, TD#,+, .!$6( &-#?.!$6 TD#,+( !)6 TD#,+, !6 &-#?!;= TD#,+( .7%( TD#,+, .7%, &-#?.7% TD#,+, !$)6 TD#,+, !$6 &-#?!$;= TD#,+, $ATA TD#,+, $ATA !$;= $ $ &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( TH#,+( .7!)46 TD#,+( .",( &-#?.", -36 174/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 97. Synchronous multiplexed PSRAM write timings(1) Symbol Parameter Min Max tw(CLK) FMC_CLK period, VDD range= 2.7 to 3.6 V 2THCLK - 1 - td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0...2) - 1.5 td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0...2) THCLK - td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - - 0 THCLK - - 0 THCLK -0.5 - td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16...25) td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16...25) td(CLKL-NWEL) FMC_CLK low to FMC_NWE low t(CLKH-NWEH) FMC_CLK high to FMC_NWE high td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3 td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 - td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 3 td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 0 - td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK -0.5 - tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - Unit ns 1. Based on test during characterization. DocID028010 Rev 4 175/217 190 Electrical characteristics STM32F479xx Figure 65. Synchronous non-multiplexed NOR/PSRAM read timings TW#,+ TW#,+ &-#?#,+ TD#,+, .%X, TD#,+( .%X( $ATA LATENCY &-#?.%X TD#,+, .!$6, TD#,+, .!$6( &-#?.!$6 TD#,+( !)6 TD#,+, !6 &-#?!;= TD#,+, ./%, TD#,+( ./%( &-#?./% TSU$6 #,+( TH#,+( $6 TSU$6 #,+( &-#?$;= TH#,+( $6 $ TSU.7!)46 #,+( &-#?.7!)4 7!)4#&' B 7!)40/, B $ TH#,+( .7!)46 TSU.7!)46 #,+( &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( T H#,+( .7!)46 TH#,+( .7!)46 -36 Table 98. Synchronous non-multiplexed NOR/PSRAM read timings(1) Symbol Min Max 2THCLK - 1 - - 0.5 THCLK - td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - - 0 THCLK - 0.5 - - THCLK+2 THCLK - 0.5 - tw(CLK) t(CLKL-NExL) td(CLKH-NExH) Parameter FMC_CLK period FMC_CLK low to FMC_NEx low (x=0...2) FMC_CLK high to FMC_NEx high (x= 0...2) td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16...25) td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16...25) td(CLKL-NOEL) FMC_CLK low to FMC_NOE low td(CLKH-NOEH) FMC_CLK high to FMC_NOE high tsu(DV-CLKH) FMC_D[15:0] valid data before FMC_CLK high 5 - th(CLKH-DV) FMC_D[15:0] valid data after FMC_CLK high 0 - FMC_NWAIT valid before FMC_CLK high 4 - 0 - t(NWAIT-CLKH) th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 1. Based on test during characterization. 176/217 DocID028010 Rev 4 Unit ns STM32F479xx Electrical characteristics Figure 66. Synchronous non-multiplexed PSRAM write timings TW#,+ TW#,+ &-#?#,+ TD#,+, .%X, TD#,+( .%X( $ATA LATENCY &-#?.%X TD#,+, .!$6, TD#,+, .!$6( &-#?.!$6 TD#,+( !)6 TD#,+, !6 &-#?!;= TD#,+, .7%, TD#,+( .7%( &-#?.7% TD#,+, $ATA &-#?$;= TD#,+, $ATA $ $ &-#?.7!)4 7!)4#&' B 7!)40/, B TSU.7!)46 #,+( TD#,+( .",( TH#,+( .7!)46 &-#?.", -36 Table 99. Synchronous non-multiplexed PSRAM write timings(1) Symbol Min Max 2THCLK - 1 - - 0.5 THCLK - td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0 td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 - t(CLK) Parameter FMC_CLK period td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0...2) t(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0...2) td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16...25) - 0 td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16...25) 0 - FMC_CLK low to FMC_NWE low - 0 THCLK -0.5 - td(CLKL-NWEL) td(CLKH-NWEH) FMC_CLK high to FMC_NWE high td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 2.5 td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 0 - td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK -0.5 - tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 - th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 - Unit ns 1. Based on test during characterization. DocID028010 Rev 4 177/217 190 Electrical characteristics STM32F479xx NAND controller waveforms and timings Figures 67 through 70 represent synchronous waveforms, and Table 100 and Table 101 provide the corresponding timings. The results shown in this table are obtained with the following FMC configuration: * COM.FMC_SetupTime = 0x01; * COM.FMC_WaitSetupTime = 0x03; * COM.FMC_HoldSetupTime = 0x02; * COM.FMC_HiZSetupTime = 0x01; * ATT.FMC_SetupTime = 0x01; * ATT.FMC_WaitSetupTime = 0x03; * ATT.FMC_HoldSetupTime = 0x02; * ATT.FMC_HiZSetupTime = 0x01; * Bank = FMC_Bank_NAND; * MemoryDataWidth = FMC_MemoryDataWidth_16b; * ECC = FMC_ECC_Enable; * ECCPageSize = FMC_ECCPageSize_512Bytes; * TCLRSetupTime = 0; * TARSetupTime = 0; * Capacitive load CL = 30 pF. In all timing tables, the THCLK is the HCLK clock period. Figure 67. NAND controller waveforms for read access &-#?.#%X !,% &-#?! #,% &-#?! &-#?.7% TD!,% ./% TH./% !,% &-#?./% .2% TSU$ ./% TH./% $ &-#?$;= -36 178/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Figure 68. NAND controller waveforms for write access &-#?.#%X !,% &-#?! #,% &-#?! TH.7% !,% TD!,% .7% &-#?.7% &-#?./% .2% TH.7% $ TV.7% $ &-#?$;= -36 Figure 69. NAND controller waveforms for common memory read access &-#?.#%X !,% &-#?! #,% &-#?! TH./% !,% TD!,% ./% &-#?.7% TW./% &-#?./% TSU$ ./% TH./% $ &-#?$;= -36 DocID028010 Rev 4 179/217 190 Electrical characteristics STM32F479xx Figure 70. NAND controller waveforms for common memory write access &-#?.#%X !,% &-#?! #,% &-#?! TD!,% ./% TW.7% TH./% !,% &-#?.7% &-#?. /% TD$ .7% TV.7% $ TH.7% $ &-#?$;= -36 Table 100. Switching characteristics for NAND Flash read cycles Symbol Parameter Max Unit 4THCLK - 0.5 4THCLK+0.5 FMC_NOE low width tw(N0E) Min tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 9 - th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3THCLK - 0.5 th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK - 2 - ns Table 101. Switching characteristics for NAND Flash write cycles Symbol tw(NWE) Parameter FMC_NWE low width Max 4THCLK 4THCLK+1 0 - tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3THCLK - 1 - td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5THCLK - 3 - - 3THCLK -0.5 3THCLK - 1 - td(ALE-NWE) FMC_ALE valid before FMC_NWE low th(NWE-ALE) FMC_NWE high to FMC_ALE invalid SDRAM waveforms and timings 180/217 Min * CL = 30 pF on data and address lines. * CL = 10 pF on FMC_SDCLK unless otherwise specified. DocID028010 Rev 4 Unit ns STM32F479xx Electrical characteristics In all timing tables, the THCLK is the HCLK clock period. * For 2.7 V VDD 3.6 V, maximum FMC_SDCLK = 90 MHz, at CL = 30 pF (on FMC_SDCLK). * For 1.71 V VDD <1.9 V, maximum FMC_SDCLK = 75 MHz when CAS Latency = 3 and 60 MHz for CAS latency 1 or 2. CL = 10 pF (on FMC_SDCLK). Figure 71. SDRAM read access waveforms (CL = 1) &-#?3$#,+ TD3$#,+,?!DD# TH3$#,+,?!DD2 TD3$#,+,?!DD2 &-#?!>@ 2OW N #OL #OL #OLI #OLN TH3$#,+,?!DD# TH3$#,+,?3.$% TD3$#,+,?3.$% &-#?3$.%;= TD3$#,+,?.2!3 TH3$#,+,?.2!3 &-#?3$.2!3 TH3$#,+,?.#!3 TD3$#,+,?.#!3 &-#?3$.#!3 &-#?3$.7% TSU3$#,+(?$ATA TH3$#,+(?$ATA $ATA &-#?$;= $ATA $ATAI $ATAN -36 Table 102. SDRAM read timings(1) Symbol Parameter Min Max tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK+0.5 tsu(SDCLKH _Data) Data input setup time 2 - th(SDCLKH_Data) Data input hold time 0 - td(SDCLKL_Add) Address valid time - 1.5 td(SDCLKL- SDNE) Chip select valid time - 0.5 th(SDCLKL_SDNE) Chip select hold time 0 - td(SDCLKL_SDNRAS) SDNRAS valid time - 0.5 th(SDCLKL_SDNRAS) SDNRAS hold time 0 - td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5 th(SDCLKL_SDNCAS) SDNCAS hold time 0 - Unit ns 1. Guaranteed based on test during characterization. DocID028010 Rev 4 181/217 190 Electrical characteristics STM32F479xx Table 103. LPSDR SDRAM read timings(1) Symbol Parameter Min Max tW(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK+0.5 tsu(SDCLKH_Data) Data input setup time 2.5 - th(SDCLKH_Data) Data input hold time 0 - td(SDCLKL_Add) Address valid time - 1 td(SDCLKL_SDNE) Chip select valid time - 1 th(SDCLKL_SDNE) Chip select hold time 1 - td(SDCLKL_SDNRAS SDNRAS valid time - 1 th(SDCLKL_SDNRAS) SDNRAS hold time 1 - td(SDCLKL_SDNCAS) SDNCAS valid time - 1 th(SDCLKL_SDNCAS) SDNCAS hold time 1 - Unit ns 1. Guaranteed based on test during characterization. Figure 72. SDRAM write access waveforms &-#?3$#,+ TD3$#,+,?!DD# TH3$#,+,?!DD2 TD3$#,+,?!DD2 &-#?!>@ 2OW N #OL #OL #OLI #OLN TH3$#,+,?!DD# TH3$#,+,?3.$% TD3$#,+,?3.$% &-#?3$.%;= TH3$#,+,?.2!3 TD3$#,+,?.2!3 &-#?3$.2!3 TD3$#,+,?.#!3 TH3$#,+,?.#!3 TD3$#,+,?.7% TH3$#,+,?.7% &-#?3$.#!3 &-#?3$.7% TD3$#,+,?$ATA &-#?$;= TD3$#,+,?.", $ATA $ATA $ATAI $ATAN TH3$#,+,?$ATA &-#?.",;= -36 182/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 104. SDRAM write timings(1) Symbol Parameter Min Max tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK+0.5 td(SDCLKL _Data) Data output valid time - 2.5 th(SDCLKL _Data) Data output hold time 3.5 - td(SDCLKL_Add) Address valid time - 1.5 td(SDCLKL_SDNWE) SDNWE valid time - 1 th(SDCLKL_SDNWE) SDNWE hold time 0 - td(SDCLKL_ SDNE) Chip select valid time - 0.5 th(SDCLKL-_SDNE) Chip select hold time 0 - td(SDCLKL_SDNRAS) SDNRAS valid time - 2 th(SDCLKL_SDNRAS) SDNRAS hold time 0 - td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5 td(SDCLKL_SDNCAS) SDNCAS hold time 0 - td(SDCLKL_NBL) NBL valid time - 0.5 th(SDCLKL_NBL) NBL output time 0 - Unit ns 1. Guaranteed based on test during characterization. Table 105. LPSDR SDRAM write timings(1) Symbol Parameter Min Max tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK+0.5 td(SDCLKL _Data) Data output valid time - 5 th(SDCLKL _Data) Data output hold time 2 - td(SDCLKL_Add) Address valid time - 2.8 td(SDCLKL-SDNWE) SDNWE valid time - 2 th(SDCLKL-SDNWE) SDNWE hold time 1 - td(SDCLKL- SDNE) Chip select valid time - 1.5 th(SDCLKL- SDNE) Chip select hold time 1 - td(SDCLKL-SDNRAS) SDNRAS valid time - 1.5 th(SDCLKL-SDNRAS) SDNRAS hold time 1.5 - td(SDCLKL-SDNCAS) SDNCAS valid time - 1.5 td(SDCLKL-SDNCAS) SDNCAS hold time 1.5 - td(SDCLKL_NBL) NBL valid time - 1.5 th(SDCLKL-NBL) NBL output time 1.5 - Unit ns 1. Guaranteed based on test during characterization. DocID028010 Rev 4 183/217 190 Electrical characteristics 5.3.30 STM32F479xx Quad-SPI interface characteristics Unless otherwise specified, the parameters given in Table 106 and Table 107 for Quad-SPI are derived from tests performed under the ambient temperature, fAHB frequency and VDD supply voltage conditions summarized in Table xx, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 11 * Measurement points are done at CMOS levels: 0.5 VDD Refer to Section 5.3.20 for more details on the input/output alternate function characteristics. Table 106. Quad-SPI characteristics in SDR mode(1) Symbol Parameter Test conditions Min Typ Max Fck 1/t(CK) Quad-SPI clock frequency tw(CKH) Unit 2.7 V VDD 3.6 V, CL = 20 pF - - 90 1.71 V VDD 3.6 V, CL = 15 pF - - 84 Quad-SPI clock high time t(CK)/2-1 - t(CK)/2 tw(CKL) Quad-SPI clock low time t(CK)/2 - t(CK)/2+1 ts(IN) Data input set-up time 0.5 - - th(IN) Data input hold time 3 - - tv(OUT) Data output valid time - 3 4 th(OUT) Data output hold time 2.5 - - MHz ns 1. Guaranteed based on test during characterization. Figure 73. Quad-SPI SDR timing diagram WU &. &ORFN 'DWDRXWSXW W &. WZ &.+ WY 287 WI &. WK 287 ' ' WV ,1 'DWDLQSXW WZ &./ ' ' WK ,1 ' ' 06Y9 184/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 107. Quad-SPI characteristics in DDR mode(1) Symbol Fck 1/t(CK) Parameter Quad-SPI clock frequency Test conditions Min Typ Max 2.7 V VDD 3.6 V, CL = 20 pF - - 80 Unit MHz 1.71 V VDD 3.6 V, CL = 15 pF - - 70 tw(CKH) Quad-SPI clock high time t(CK)/2-1 - t(CK)/2 tw(CKL) Quad-SPI clock low time - t(CK)/2 - t(CK)/2+1 tsr(IN) tsf(IN) Data input set-up time 2.7 V VDD 3.6 V 2 - - 1.71 V VDD 3.6 V 0.5 - - thr(IN) thf(IN) Data input hold time 2.7 V VDD 3.6 V 3 - - 1.71 V VDD 3.6 V 4.5 - - DHHC=0 - 8 10.5 DHHC=1 Pres=1,2... - Thclk/2+2 Thclk/2+2.5 DHHC=0 7 - - DHHC=1 Pres=1,2... Thclk/2+0.5 - - tvr(OUT) tvf(OUT) Data output valid time th(OUT) tf(OUT) Data output hold time ns 1. Guaranteed based on test during characterization. Figure 74. Quad-SPI DDR timing diagram WU &. &ORFN W &. WYI 287 'DWDRXWSXW WZ &.+ WKU 287 ' WYU 287 ' ' WZ &./ WKI 287 ' WVI ,1 WKI ,1 'DWDLQSXW ' ' WI &. ' ' WVU ,1 WKU ,1 ' ' ' ' 06Y9 5.3.31 Camera interface (DCMI) timing specifications Unless otherwise specified, the parameters given in Table 108 for DCMI are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage summarized in Table 17, with the following configuration: * DCMI_PIXCLK polarity: falling * DCMI_VSYNC and DCMI_HSYNC polarity: high * Data formats: 14 bits * Capacitive load C = 30 pF * Measurement points are done at CMOS levels: 0.5 VDD DocID028010 Rev 4 185/217 190 Electrical characteristics STM32F479xx Table 108. DCMI characteristics(1) Symbol Min Max Unit - 0.4 - - 54 MHz Pixel clock input duty cycle 30 70 % tsu(DATA) Data input setup time 4 - th(DATA) Data input hold time 1 - - Parameter Frequency ratio DCMI_PIXCLK/fHCLK DCMI_PIXCLK Pixel clock input DPixel tsu(HSYNC) tsu(VSYNC) DCMI_HSYNC/DCMI_VSYNC input setup time 3.5 - th(HSYNC) th(VSYNC) DCMI_HSYNC/DCMI_VSYNC input hold time 0 - ns 1. 1.Guaranteed based on test during characterization. Figure 75. DCMI timing diagram '&0,B3,;&/. '&0,B3,;&/. WVX +6<1& WK +6<1& '&0,B+6<1& WVX 96<1& WK +6<1& '&0,B96<1& WVX '$7$ WK '$7$ '$7$>@ 069 5.3.32 LCD-TFT controller (LTDC) characteristics Unless otherwise specified, the parameters given in Table 109 for LCD-TFT are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage summarized in Table 17, with the following configuration: 186/217 * LCD_CLK polarity: high * LCD_DE polarity: low * * LCD_VSYNC and LCD_HSYNC polarity: high Pixel formats: 24 bits * Output speed is set to OSPEEDRy[1:0] = 11 * Capacitive load CL = 30 pF * Measurement points are done at CMOS levels: 0.5 VDD DocID028010 Rev 4 STM32F479xx Electrical characteristics Table 109. LTDC characteristics(1) Symbol Parameter Min Max Unit fCLK LTDC clock output frequency - 65 MHz DCLK LTDC clock output duty cycle 45 55 % tw(CLKH) tw(CLKL) Clock High time, low time tw(CLK)/2 - 0.5 tw(CLK)/2+0.5 tv(DATA) Data output valid time - 1.5 th(DATA) Data output hold time 0 - HSYNC/VSYNC/DE output valid time - 0.5 HSYNC/VSYNC/DE output hold time 0 - tv(HSYNC) tv(VSYNC) ns tv(DE) th(HSYNC) th(VSYNC) th(DE) 1. Based on test during characterization. Figure 76. LCD-TFT horizontal timing diagram W&/. /&'B&/. /&'B96<1& WY +6<1& WY +6<1& /&'B+6<1& WK '( WY '( /&'B'( WY '$7$ /&'B5>@ /&'B*>@ /&'B%>@ 1JYFM 1JYFM 1JYFM / WK '$7$ +6<1& +RUL]RQWDO ZLGWK EDFNSRUFK $FWLYHZLGWK +RUL]RQWDO EDFNSRUFK 2QHOLQH 069 DocID028010 Rev 4 187/217 190 Electrical characteristics STM32F479xx Figure 77. LCD-TFT vertical timing diagram W&/. /&'B&/. WY 96<1& WY 96<1& /&'B96<1& /&'B5>@ /&'B*>@ /&'B%>@ - LINES DATA 96<1& 9HUWLFDO ZLGWK EDFNSRUFK $FWLYHZLGWK 9HUWLFDO EDFNSRUFK 2QHIUDPH 069 5.3.33 SD/SDIO MMC card host interface (SDIO) characteristics Unless otherwise specified, the parameters given in Table 110 for the SDIO/MMC interface are derived from tests performed under the ambient temperature, fPCLK2 frequency and VDD supply voltage conditions summarized in Table 17, with the following configuration: * Output speed is set to OSPEEDRy[1:0] = 11 * Capacitive load C = 30 pF * Measurement points are done at CMOS levels: 0.5 VDD Refer to Section 5.3.20 for more details on the input/output characteristics. Figure 78. SDIO high-speed mode TF TR T# T7#+( T7#+, #+ T/6 T/( $ #-$ OUTPUT T)35 T)( $ #-$ INPUT AI 188/217 DocID028010 Rev 4 STM32F479xx Electrical characteristics Figure 79. SD default mode #+ T/6$ T/($ $ #-$ OUTPUT AI Table 110. Dynamic characteristics: SD / MMC characteristics, VDD = 2.7 to 3.6 V(1) Symbol Parameter Conditions Min Typ Max Unit fPP Clock frequency in data transfer mode - 0 - 50 MHz SDIO_CK/fPCLK2 frequency ratio - - - 8/3 - 9.5 10.5 - 8.5 9.5 - 2.0 - - 2.0 - - - 13 13.5 12.5 - - 2.0 - - 2.5 - - - 1.5 2.0 1.0 - - tW(CKL) Clock low time tW(CKH) Clock high time fpp =50 MHz ns CMD, D inputs (referenced to CK) in MMC and SD HS mode tISU Input setup time HS tIH Input hold time HS fpp =50 MHz ns CMD, D outputs (referenced to CK) in MMC and SD HS mode tOV Output valid time HS tOH Output hold time HS fpp =50 MHz ns CMD, D inputs (referenced to CK) in SD default mode tISUD Input setup time SD tIHD Input hold time SD fpp =25 MHz ns CMD, D outputs (referenced to CK) in SD default mode tOVD Output valid default time SD tOHD Output hold default time SD fpp =25 MHz ns 1. Guaranteed based on test during characterization. DocID028010 Rev 4 189/217 190 Electrical characteristics STM32F479xx Table 111. Dynamic characteristics: SD / MMC characteristics, VDD = 1.71 to 1.9 V(1)(2) Symbol Parameter Conditions Min Typ Max Unit fPP Clock frequency in data transfer mode - 0 - 50 MHz SDIO_CK/fPCLK2 frequency ratio - - - 8/3 - 9.5 10.5 - 8.5 9.5 - 0.5 - - 3.5 - - - 13.5 14.5 13.0 - - tW(CKL) Clock low time tW(CKH) Clock high time fpp =50 MHz ns CMD, D inputs (referenced to CK) in eMMC mode tISU Input setup time HS tIH Input hold time HS fpp =50 MHz ns CMD, D outputs (referenced to CK) in eMMC mode tOV Output valid time HS tOH Output hold time HS fpp =50 MHz ns 1. Guaranteed based on test during characterization. 2. Cload = 20 pF. 5.3.34 RTC characteristics Table 112. RTC characteristics Symbol Parameter - fPCLK1/RTCCLK frequency ratio 190/217 Conditions Any read/write operation from/to an RTC register DocID028010 Rev 4 Min Max 4 - STM32F479xx 6 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. LQFP100 package information Figure 80. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat package outline MM C ! ! 3%!4).' 0,!.% # ! '!5'% 0,!.% $ , $ ! + CCC # , $ 0). )$%.4)&)#!4)/. % % % B 6.1 E ,?-%?6 1. Drawing is not to scale. DocID028010 Rev 4 191/217 215 Package information STM32F479xx Table 113. LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.600 - - 0.0630 A1 0.050 - 0.150 0.0020 - 0.0059 A2 1.350 1.400 1.450 0.0531 0.0551 0.0571 b 0.170 0.220 0.270 0.0067 0.0087 0.0106 c 0.090 - 0.200 0.0035 - 0.0079 D 15.800 16.000 16.200 0.6220 0.6299 0.6378 D1 13.800 14.000 14.200 0.5433 0.5512 0.5591 D3 - 12.000 - - 0.4724 - E 15.800 16.000 16.200 0.6220 0.6299 0.6378 E1 13.800 14.000 14.200 0.5433 0.5512 0.5591 E3 - 12.000 - - 0.4724 - e - 0.500 - - 0.0197 - L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - k 0.0 3.5 7.0 0.0 3.5 7.0 ccc - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. 192/217 DocID028010 Rev 4 STM32F479xx Package information Figure 81. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat recommended footprint AIC 1. Dimensions are expressed in millimeters. Device Marking for LQFP100 The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 82. LQFP100 marking example (package top view) 3URGXFWLGHQWLILFDWLRQ 670) 9,7 5 5HYLVLRQFRGH 'DWHFRGH < :: 3LQLGHQWLILHU 069 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity. DocID028010 Rev 4 193/217 215 Package information 6.2 STM32F479xx LQFP144 package information Figure 83. LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package outline 6($7,1* 3/$1( F $ $ $ & PP *$8*(3/$1( ' / ' . $ FFF & / ' ( 3,1 ( ( E ,'(17,),&$7,21 H $B0(B9 1. Drawing is not to scale. 194/217 DocID028010 Rev 4 STM32F479xx Package information Table 114. LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.600 - - 0.0630 A1 0.050 - 0.150 0.0020 - 0.0059 A2 1.350 1.400 1.450 0.0531 0.0551 0.0571 b 0.170 0.220 0.270 0.0067 0.0087 0.0106 c 0.090 - 0.200 0.0035 - 0.0079 D 21.800 22.000 22.200 0.8583 0.8661 0.8740 D1 19.800 20.000 20.200 0.7795 0.7874 0.7953 D3 - 17.500 - - 0.6890 - E 21.800 22.000 22.200 0.8583 0.8661 0.8740 E1 19.800 20.000 20.200 0.7795 0.7874 0.7953 E3 - 17.500 - - 0.6890 - e - 0.500 - - 0.0197 - L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - k 0 3.5 7 0 3.5 7 ccc - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. DocID028010 Rev 4 195/217 215 Package information STM32F479xx Figure 84. LQFP144 - 144-pin,20 x 20 mm low-profile quad flat package recommended footprint DLH 1. Dimensions are expressed in millimeters. Device Marking for LQFP144 Figure 85 gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 85. LQFP144 marking example (package top view) 5HYLVLRQFRGH 3URGXFWLGHQWLILFDWLRQ 5 670)=,7 < :: 'DWHFRGH 3LQLGHQWLILHU 069 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such 196/217 DocID028010 Rev 4 STM32F479xx Package information usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity. 6.3 WLCSP168 package information Figure 86. WLCSP168 - 168-pin, 4.891 x 5.692 mm, 0.4 mm pitch wafer level chip scale package outline $EDOOORFDWLRQ H ) EEE = * 'HWDLO$ H H H $ $ $ %RWWRPYLHZ %XPSVLGH 6LGHYLHZ ; < ' %XPS $ $ HHH = ( E FFF GGG $RULHQWDWLRQ UHIHUHQFH = ;< = 6HDWLQJ = SODQH 'HWDLO$ 5RWDWHG 7RSYLHZ :DIHUEDFNVLGH DDD ; $6B0(B9 DocID028010 Rev 4 197/217 215 Package information STM32F479xx Table 115. WLCSP168 - 168-pin, 4.891 x 5.692 mm, 0.4 mm pitch wafer level chip scale package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.525 0.555 0.585 0.0207 0.0219 0.0230 A1 - 0.170 - - 0.0067 - A2 - 0.380 - - 0.0150 - (2) A3 - 0.025 - - 0.0010 - (3) 0.220 0.250 0.280 0.0087 0.0098 0.0110 D 4.856 4.891 4.926 0.1912 0.1926 0.1939 E 5.657 5.692 5.727 0.2227 0.2241 0.2255 e - 0.400 - - 0.0157 - e1 - 4.400 - - 0.1732 - e2 - 5.200 - - 0.2047 - F - 0.2455 - - 0.0097 - G - 0.246 - - 0.0097 - aaa - - 0.100 - - 0.0039 bbb - - 0.100 - - 0.0039 ccc - - 0.100 - - 0.0039 ddd - - 0.050 - - 0.0020 eee - - 0.050 - - 0.0020 b 1. Values in inches are converted from mm and rounded to 4 decimal digits. 2. Back side coating. 3. Dimension is measured at the maximum bump diameter parallel to primary datum Z. 198/217 DocID028010 Rev 4 STM32F479xx 6.4 Package information UFBGA169 package information Figure 87. UFBGA169 - 169-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package outline = 6HDWLQJSODQH $ $ GGG = $ $ $ E 6,'(9,(: $EDOO LGHQWLILHU $EDOO LQGH[DUHD ; ( ( H ) $ ) ' ' H < 1 %277209,(: 7239,(: E EDOOV HHH 0 = ; < III 0 = $<9B0(B9 1. Drawing is not in scale. Table 116. UFBGA169 - 169-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package mechanical data inches(1) millimeters Symbol Min. Typ. Max. Min. Typ. Max. A 0.460 0.530 0.600 0.0181 0.0209 0.0236 A1 0.050 0.080 0.110 0.0020 0.0031 0.0043 A2 0.400 0.450 0.500 0.0157 0.0177 0.0197 A3 - 0.130 - - 0.0051 - A4 0.270 0.320 0.370 0.0106 0.0126 0.0146 b 0.230 0.280 0.330 0.0091 0.0110 0.0130 D 6.950 7.000 7.050 0.2736 0.2756 0.2776 D1 5.950 6.000 6.050 0.2343 0.2362 0.2382 E 6.950 7.000 7.050 0.2736 0.2756 0.2776 E1 5.950 6.000 6.050 0.2343 0.2362 0.2382 e - 0.500 - - 0.0197 - F 0.450 0.500 0.550 0.0177 0.0197 0.0217 DocID028010 Rev 4 199/217 215 Package information STM32F479xx Table 116. UFBGA169 - 169-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package mechanical data (continued) inches(1) millimeters Symbol Min. Typ. Max. Min. Typ. Max. ddd - - 0.100 - - 0.0039 eee - - 0.150 - - 0.0059 fff - - 0.050 - - 0.0020 1. Values in inches are converted from mm and rounded to 4 decimal digits. Device Marking for UFBGA169 The following figure gives an example of topside marking orientation versus ball A1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 88. UFBGA169 marking example (package top view) 3LQ LGHQWLILHU ^dD& 3URGXFWLGHQWLILFDWLRQ /, 'DWHFRGH z tt 5HYLVLRQFRGH 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity. 200/217 DocID028010 Rev 4 STM32F479xx 6.5 Package information LQFP176 package information Figure 89. LQFP176, 24 x 24 mm, 176-pin low-profile quad flat package outline C ! ! ! # 3EATING PLANE MM GAUGE PLANE K ! , ($ 0). )$%.4)&)#!4)/. , $ :% % (% E :$ B 4?-%?6 1. Drawing is not to scale. Table 117. LQFP176, 24 x 24 mm, 176-pin low-profile quad flat package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.600 - - 0.0630 A1 0.050 - 0.150 0.0020 - 0.0059 A2 1.350 - 1.450 0.0531 - 0.0060 b 0.170 - 0.270 0.0067 - 0.0106 C 0.090 - 0.200 0.0035 - 0.0079 D 23.900 - 24.100 0.9409 - 0.9488 E 23.900 - 24.100 0.9409 - 0.9488 DocID028010 Rev 4 201/217 215 Package information STM32F479xx Table 117. LQFP176, 24 x 24 mm, 176-pin low-profile quad flat package mechanical data (continued) inches(1) millimeters Symbol Min Typ Max Min Typ Max e - 0.500 - - 0.0197 - HD 25.900 - 26.100 1.0200 - 1.0276 HE 25.900 - 26.100 1.0200 - 1.0276 L 0.450 - 0.750 0.0177 - 0.0295 L1 - 1.000 - - 0.0394 - ZD - 1.250 - - 0.0492 - ZE - 1.250 - - 0.0492 - ccc - - 0.080 - - 0.0031 k 0 - 7 0 - 7 1. Values in inches are converted from mm and rounded to 4 decimal digits. 202/217 DocID028010 Rev 4 STM32F479xx Package information Figure 90. LQFP176 recommended footprint 4?&0?6 1. Dimensions are expressed in millimeters. DocID028010 Rev 4 203/217 215 Package information STM32F479xx Device Marking for LQFP176 The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 91. LQFP176 marking example (package top view) 3URGXFWLGHQWLILFDWLRQ ^&//dh z tt 5HYLVLRQFRGH 'DWHFRGH 3LQ LGHQWLILHU 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity. 204/217 DocID028010 Rev 4 STM32F479xx 6.6 Package information UFBGA176+25 package information Figure 92. UFBGA176+25 - 201-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package outline & ^ $EDOO LGHQWLILHU $EDOO LQGH[ DUHD $ & & Z KddKDs/t E EDOOV dKWs/t HHH 0 & $ III 0 & Ds 1. Drawing is not to scale. Table 118. UFBGA176+25, - 201-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package mechanical data inches(1) millimeters Symbol Min. Typ. Max. Min. Typ. Max. A 0.460 0.530 0.600 0.0181 0.0209 0.0236 A1 0.050 0.080 0.110 0.0020 0.0031 0.0043 A2 0.400 0.450 0.500 0.0157 0.0177 0.0197 A4 0.270 0.320 0.370 0.0106 0.0126 0.0146 b 0.230 0.280 0.330 0.0091 0.0110 0.0130 D 9.950 10.000 10.050 0.3917 0.3937 0.3957 E 9.950 10.000 10.050 0.3917 0.3937 0.3957 e - 0.650 - - 0.0256 - F 0.400 0.450 0.500 0.0157 0.0177 0.0197 ddd - - 0.080 - - 0.0031 eee - - 0.150 - - 0.0059 fff - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. DocID028010 Rev 4 205/217 215 Package information STM32F479xx Figure 93. UFBGA176+25 - 201-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array package recommended footprint 'SDG 'VP &Ws Table 119. UFBGA176+25 recommended PCB design rules (0.65 mm pitch BGA) Dimension 206/217 Recommended values Pitch 0.65 mm Dpad 0.300 mm Dsm 0.400 mm typ. (depends on the soldermask registration tolerance) Stencil opening 0.300 mm Stencil thickness Between 0.100 mm and 0.125 mm Pad trace width 0.100 mm DocID028010 Rev 4 STM32F479xx LQFP208 package information Figure 94. LQFP208, 28 x 28 mm, 208-pin low-profile quad flat package outline 6($7,1* 3/$1( & F $ $ $ FFF & PP $ *$8*(3/$1( . / ' / ' ' ( ( ( E 6.7 Package information 3,1 ,'(17,),&$7,21 H 6)@.&@7 1. Drawing is not to scale. Table 120. LQFP208, 28 x 28 mm, 208-pin low-profile quad flat package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.600 -- - 0.0630 A1 0.050 - 0.150 0.0020 - 0.0059 A2 1.350 1.400 1.450 0.0531 0.0551 0.0571 b 0.170 0.220 0.270 0.0067 0.0087 0.0106 DocID028010 Rev 4 207/217 215 Package information STM32F479xx Table 120. LQFP208, 28 x 28 mm, 208-pin low-profile quad flat package mechanical data (continued) inches(1) millimeters Symbol Min Typ Max Min Typ Max c 0.090 - 0.200 0.0035 - 0.0079 D 29.800 30.000 30.200 1.1732 1.1811 1.1890 D1 27.800 28.000 28.200 1.0945 1.1024 1.1102 D3 - 25.500 - - 1.0039 - E 29.800 30.000 30.200 1.1732 1.1811 1.1890 E1 27.800 28.000 28.200 1.0945 1.1024 1.1102 E3 - 25.500 - - 1.0039 - e - 0.500 - - 0.0197 - L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - k 0 3.5 7.0 0 3.5 7.0 ccc - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. 208/217 DocID028010 Rev 4 STM32F479xx Package information Figure 95. LQFP208 recommended footprint -36 1. Dimensions are expressed in millimeters. DocID028010 Rev 4 209/217 215 Package information STM32F479xx Device Marking for LQFP208 The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 96. LQFP208 marking example (package top view) 5HYLVLRQFRGH 3URGXFWLGHQWLILFDWLRQ ^dD&/d 3LQ LGHQWLILHU 'DWHFRGH z tt 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity. 210/217 DocID028010 Rev 4 STM32F479xx 6.8 Package information TFBGA216 package information Figure 97. TFBGA216 - thin fine pitch ball grid array 13 x 13 x 0.8mm, package outline = 6HDWLQJSODQH GGG = $ $ $ ' H $EDOO $EDOO LGHQWLILHU LQGH[DUHD ) ; ' $ * ( H ( < 5 %277209,(: E EDOOV HHH 0 = < ; III 0 = 7239,(: $/B0(B9 1. Drawing is not to scale. Table 121. TFBGA216 - thin fine pitch ball grid array 13 x 13 x 0.8mm package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.100 - - 0.0433 A1 0.150 - - 0.0059 - - A2 - 0.760 - - 0.0299 - A4 - 0.210 - - 0.0083 - b 0.350 0.400 0.450 0.0138 0.0157 0.0177 D 12.850 13.000 13.150 0.5118 0.5118 0.5177 D1 - 11.200 - - 0.4409 - E 12.850 13.000 13.150 0.5118 0.5118 0.5177 E1 - 11.200 - - 0.4409 - e - 0.800 - - 0.0315 - F - 0.900 - - 0.0354 - ddd - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. DocID028010 Rev 4 211/217 215 Package information STM32F479xx Device Marking for TFBGA216 The following figure gives an example of topside marking orientation versus ball A1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 98. TFBGA216 marking example (package top view) 3URGXFWLGHQWLILFDWLRQ ^& 5HYLVLRQFRGH E/,h 'DWHFRGH z tt %DOO LGHQWLILHU 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity. 212/217 DocID028010 Rev 4 STM32F479xx 6.9 Package information Thermal characteristics The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated using the following equation: TJ max = TA max + (PD max x JA) Where: * TA max is the maximum ambient temperature in C, * JA is the package junction-to-ambient thermal resistance, in C/W, * PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax), * PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip internal power. PI/O max represents the maximum power dissipation on output pins where: PI/O max = (VOL x IOL) + ((VDD - VOH) x IOH), taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the application. Table 122. Package thermal characteristics Symbol JA Parameter Value Thermal resistance junction-ambient LQFP100 43 Thermal resistance junction-ambient LQFP144 40 Thermal resistance junction-ambient WLCSP168 31 Thermal resistance junction-ambient LQFP176 - 24 x 24 mm / 0.5 mm pitch 38 Thermal resistance junction-ambient LQFP208 - 28 x 28 mm / 0.5 mm pitch 19 Thermal resistance junction-ambient UFBGA169 - 7 x 7mm / 0.5 mm pitch 52 Thermal resistance junction-ambient UFBGA176 - 10 x 10 mm / 0.5 mm pitch 39 Thermal resistance junction-ambient TFBGA216 - 13 x 13 mm / 0.8 mm pitch 29 Unit C/W Reference document JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural Convection (Still Air). Available from www.jedec.org. DocID028010 Rev 4 213/217 215 Part numbering 7 STM32F479xx Part numbering Table 123. Ordering information scheme Example: STM32 F 479 V I T 6 xxx Device family STM32 = ARM-based 32-bit microcontroller Product type F = general-purpose Device subfamily 479= STM32F479xx, USB OTG FS/HS, camera interface, Ethernet, LCD-TFT, DSIHost, cryptographic acceleration, Quad-SPI, Chrom-ART graphical accelerator. Pin count V = 100 pins Z = 144 pins A = 168 and 169 pins I = 176 pins B = 208 pins N = 216 pins Flash memory size G = 1024 Kbytes of Flash memory I = 2048 Kbytes of Flash memory Package T = LQFP H = BGA Y = WLCSP Temperature range 6 = Industrial temperature range, -40 to 85 C. 7 = Industrial temperature range, -40 to 105 C. Options xxx = programmed parts TR = tape and reel For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest ST sales office. 214/217 DocID028010 Rev 4 STM32F479xx Recommendations when using internal reset OFF Appendix A Recommendations when using internal reset OFF When the internal reset is OFF, the following integrated features are no longer supported: A.1 * The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled. * The brownout reset (BOR) circuitry must be disabled. * The embedded programmable voltage detector (PVD) is disabled. * VBAT functionality is no more available and VBAT pin should be connected to VDD. * The over-drive mode is not supported. Operating conditions Table 124. Limitations depending on the operating power supply range Operating power supply range ADC operation Maximum Flash memory access frequency with no wait states (fFlashmax) VDD =1.7 to 2.1 V(3) Conversion time up to 1.2 Msps 20 MHz(4) Maximum Flash memory access frequency with wait states (1)(2) 168 MHz with 8 wait states and over-drive OFF I/O operation Possible Flash memory operations 8-bit erase and - No I/O program compensation operations only 1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is required. 2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state program execution. 3. VDD/VDDA minimum value of 1.7 V, with the use of an external power supply supervisor (refer to Section 2.19.1: Internal reset ON). 4. Prefetch is not available. Refer to AN3430 application note for details on how to adjust performance and power. DocID028010 Rev 4 215/217 215 Revision history STM32F479xx Revision history Table 125. Document revision history Date Revision 01-Sep-2015 1 Initial release. 2 Updated Table 4: Regulator ON/OFF and internal reset ON/OFF availability and Table 54: EMI characteristics. Updated Figure 17: STM32F47x UFBGA176 ballout, Figure 35: PLL output clock waveforms in center spread mode and Figure 36: PLL output clock waveforms in down spread mode. Updated title of Section 6.8: TFBGA216 package information. 3 Updated cover page with introduction of LQFP100 and LQFP144 packages. Updated Section 1: Description and Section 1.1: Compatibility throughout the family. Updated Figure 1: Incompatible board design for LQFP176 package and its footnote. Updated Table 1: Device summary, Table 2: STM32F479xx features and peripheral counts, Table 4: Regulator ON/OFF and internal reset ON/OFF availability, Table 10: STM32F479xx pin and ball definitions, Table 11: FMC pin definition, Table 12: Alternate function, Table 17: General operating conditions, Table 55: ESD absolute maximum ratings, Table 76: ADC characteristics, Table 122: Package thermal characteristics and Table 123: Ordering information scheme. Removed former Table 73: Ethernet DC electrical characteristics. Added Figure 13: STM32F47x LQFP100 pinout and Figure 14: STM32F47x LQFP144 pinout. Updated Figure 17: STM32F47x UFBGA176 ballout, Figure 18: STM32F47x LQFP176 pinout and Figure 33: ACCHSI vs. temperature. Added Section 6.1: LQFP100 package information and Section 6.2: LQFP144 package information. Replaced former footnote 7 of Table 10: STM32F479xx pin and ball definitions with footnote 2. Added footnote 3 to Table 14: Voltage characteristics. Updated footnote 1 of Figure 56 and footnote 1 of Figure 57. 4 Updated Table 12: Alternate function. Corrected maximum characterized wakeup timing values for Stop mode in Table 34: Low-power mode wakeup timings. Updated Figure 14: STM32F47x LQFP144 pinout. Updated Device Marking for LQFP100, Device Marking for UFBGA169, Device Marking for LQFP176, Device Marking for LQFP176 and Device Marking for LQFP176. Updated footnotes of figures 82, 85, 88, 91, 96 and 98 in Section 6: Package information. 19-Oct-2015 08-Mar-2016 03-Mar-2017 216/217 Changes DocID028010 Rev 4 STM32F479xx IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2017 STMicroelectronics - All rights reserved DocID028010 Rev 4 217/217 217