CMOS area image sensors S10830 S10834 CMOS area image sensors for X-ray imaging S10830 is CMOS area image sensor suitable for intra-oral X-ray imaging in dental diagnosis. S10830 has 1.5 megapixels (1000 x 1500) with a pixel size of 20 x 20 m. FOP (fiber optic plate) is used as an input window, making S10830 high imagequality and long-term X-ray life. S10834 is an easy-to-use X-ray imaging module using S10830 with a cable. S10830 has 14bit ADC on chip and LVDS digital output signal. It is to contribute cost reduction in a user's system. S10831 and S10835 (1300 x 1700 pixels) are also available. Features Applications Pixel size: 20 x 20 m Intra-oral X-ray imaging dental diagnosis 1000 (H) x 1500 (V) pixel format General X-ray imaging Frame rate: 0.9 frames/s (MCLK=20 MHz) Non-destructive inspection High resolution: 20 Lp/mm typ. 14-bit ADC (virtual dynamic range: 58 dB) Image data acquisition by Vdd, Vss, MCLK and MST only These products are components for incorporation into medical device. Global shutter operation Photodiode placed outside the active area to monitor x-ray irradiation Structure Parameter Pixel size Pixel pitch Number of effective pixels Value 20 x 20 20 1000 (H) x 1500 (V) Upper part: 766, 768, 770 Lower part: 1000 x 3 20 (H) x 30 (V) Number of light-shielded pixels Image size Unit m m pixels pixels mm Absolute maximum ratings Parameter Power supply Input voltage Consumption current Operating temperature Storage temperature Total dose irradiation Symbol Vdd Vi Idd Topr Tstg Value -0.5 to +6 -0.5 to "Vdd + 0.5" (6 max.) 400 0 to +50 -20 to +70 Unit V V mA C C D 50 Gy www.hamamatsu.com 1 CMOS area image sensors S10830, S10834 Recommended operating conditions Parameter Symbol Vdd Vsigi(H) Vsigi(L) Power supply High Low Digital input voltage*1 Min. 4.75 2.4 0 Typ. 5.0 3.3 - Max. 5.5 Vdd + 0.25 0.4 Unit V V *1: Vsigi(H) is a "High" period voltage of MST and MCLK, Vsigi(L) is a "Low" period voltage of MST and MCLK. Electrical characteristics (Ta=25 C, Vdd=5 V) Parameter Master clock pulse frequency Digital output format Image sensor*2 Digital output frequency Trigger photodiode*3 4 Digital output voltage* Digital output rise time*4 *5 Digital output fall time*4 *5 Image sensor*6 Video data rate Trigger photodiode Start pulse interval*7 Image sensor*8 Integration time Trigger photodiode*9 Image sensor*10 Consumption current Trigger photodiode*11 Symbol f(MCLK) f(DO) V(DOmag) tr(DO) tf(DO) VR VR2 T(ST-I) Min. 1M Typ. 20 M LVDS differential output f(MCLK) f(MCLK)/56 350 2 2 f(MCLK)/14 f(MCLK)/7168 PW(MST) + 394/f(MCLK) 6608/f(MCLK) 55 25 22.7 M P1 P2 - Max. 40 M 5 5 - Unit Hz Hz mV ns ns Hz Hz MCLK s s mA mA 110 50 Refer to "Timing chart", Image data readout. Refer to "Timing chart", Trigger photodiode data readout. The output voltage difference between LVDS differential terminals with 100 termination The time in output from 10% to 90% or from 90% to 10% with 2 m long cable It takes 14 master clock pulse cycles to read out 1 pixel It takes 22.7 M master clock pulse cycles to read out 1 frame of an image. The readout of the next frame must be started after finishing the readout of previous frame. *8: Refer to "Timing chart", PW(MST) is "Low" pulse width of MST (master start pulse). e.g.) When the PW(MST) is 10 ms and f(MCLK) is 20 MHz: Integration time = 10 ms + 394/20 M = 10.0197 ms *9: Refer to "Timing chart", The trigger photodiode is output every 7168 MCLK cycles. The integration time is 6608 MCLK cycles, and 560 MCLK cycles are used for the reset period of trigger photodiode. e.g.) When the f(MCLK) is 20 MHz: Integration time = 6608/20 M = 330.4 s *10: The consumption current of image sensor chip only. f(MCLK)=20 MHz *11: The consumption current of image sensor chip only. Without 100 termination (see "Output format" in P.7). f(MCLK)=20 MHz *2: *3: *4: *5: *6: *7: Resolution (S10834) Response (S10834) t (X-ray source: 60 kVp, filter: ABS 1.5 mm ) 1.0 (X-ray source: 60 kVp, filter: ABS 1.5 mmt) 6000 1500 0.9 Output (LSB) 0.7 CTF 0.6 0.5 0.4 0.3 4000 1000 2000 500 Output voltage (mV) 0.8 0.2 0.1 0.0 0 0 2 4 6 8 10 12 14 16 18 20 Spatial frequency (line pairs/mm) 0 100 200 300 0 400 Absorbed dose (Gy) KMPDB0358EA KMPDB0359EA 2 CMOS area image sensors S10830, S10834 Electrical and optical characteristics (image sensor, Ta=25 C, Vdd=5 V) Parameter Dark output voltage (effective pixel)* 12 Saturation output voltage Random noise*13 Dynamic range*14 Sensitivity*15 Saturation dose*15 Photo response non-uniformity*12 *16 White spot Point defect*17 Black spot Blemish Cluster defect*18 Big cluster defect*19 Defect line*20 X-ray resolution Symbol Vdark Ddark Vsat Dsat VRN DRN DR VRES DRES Lsat PRNU DL Reso Min. 0.8 3280 45 2.3 9.4 180 15 Typ. 50 200 1.2 4900 1500 6.2 58 3.4 14 350 20 Max. 120 490 4500 18 4.5 18 530 30 20 20 3 0 15 - Unit mV/s LSB/s V LSB V rms LSB rms dB mV/Gy LSB/Gy Gy % lines Lp/mm *12: Average value. Excluding defect pixels. *13: Integration time = 1 s *14: Dynamic range = 20 x log Saturation output voltage Random noise *15: 60 kV tube voltage, no Al plate at X-ray emission *16: PRNU (%) = V / V x 100 V: average of pixel outputs, V: difference between V and min. or max. output *17: White spot > 1.2 V/s (4900 LSB/s) at effective pixel: 10 times of the maximum of dark output Black spot > 50% reduction in response relative to adjacent pixels, measured at half of the saturation output *18: Continuous 2 to 9 point defects *19: Continuos 10 or more point defects. (except a defect line) *20: A defect line consists of 10 or more point defects in 1 pixel width. Electrical and optical characteristics (trigger photodiode, Ta=25 C, Vdd=5 V) Parameter Saturation voltage Random noise Sensitivity*21 Offset of A/D converter Symbol Vsat Dsat VRN DRN VRES DRES - Min. - Typ. 2.2 450 10 2 6.8 x 102 200 430 Max. 2.9 590 - Unit V LSB mV rms LSB rms mV/Gy LSB/Gy LSB *21: Integration time=330 s, f(MCLK)=20 MHz Electrical and optical characteristics (A/D converter, Ta=25 C, Vdd=5 V) Parameter Resolution Connection time Conversion voltage range Symbol RESO tCON - Image sensor Trigger photodiode 14 1/14 x f(MCLK) 0 to 4 10 1/7168 x f(MCLK) 0 to Vdd Unit bit s V 3 CMOS area image sensors S10830, S10834 Block diagram Vertical shift register Trigger photodiode Effective pixels (1000 x 1500) Amp Outclk 10-bit ADC Outdata 14-bit ADC Amp Column CDS Timing generator Horizontal shift register MCLK MST Vdd Vss KMPDC0356EB Timing chart Total timing chart X-ray MCLK(input) 20 MHz (3.3 V) (B) (C) MST (input) OUTCLK (output) 0.357 MHz 20 MHz LVDS (A) OUTDATA (output) Data Data Data Data Data Data Data Data (Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (Trig.) State of image sensor 1000 x 1500 (+6) pixels Reset Integration (electrical shutter is closed) (electrical shutter is open) Data 1st row (D) 1 Data 2nd row ... Data 1506th row Readout image Data Data Data Data Data Data (Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (Trig.) (E), (F) Tran. Read Tran. Read Tran. Tran. Read 1st 1st 2nd 2nd 3rd . . . 1506th 1506th row row row row row row row Reset (electrical shutter is closed) Reset only Integration and readout Integration and readout State of trigger photodiode 0.357 MHz 4 MCLK MST OUTDATA D3 D2 D1 D0 (A) Continuously checking some X-ray radiation with monitoring the data of trigger photodiode by an external circuit. (B) The MST should be set at low and integration of each pixel is to start when X-ray input is detected. The Integration time is almost same as the low width of the MST. It can be controlled by an external circuit (software, firmware, etc.). (C) Just after the MST is set at high, the integration is to finish and readout starts. (D) Each readout row has a header part, which consists of 28 high levels of the OUTDATA. (E), (F) After completion readout, the OUTCLK and the OUTDATA automatically move to state of trigger photodiode. KMPDC0357EB 4 CMOS area image sensors S10830, S10834 (A) Trigger photodiode data readout MCLK 20 MHz MST 1 Outclk 0.357 MHz Outdata 0.357 MHz 21 129 9876543210 (Vsync) (Hsync) Pixel Reset Integration Trigger photodiode Trigger photodiode readout Integration Reset Reset Readout Readout KMPDC0358EA (B) Image data integration start 1 14 MCLK 20 MHz MST Outclk 0.357 MHz Outdata 0.357 MHz (Vsync) (Hsync) Pixel Reset Integration Reset or integration Trigger photodiode Trigger photodiode readout KMPDC0359EA (C) Image data readout start 1 4 10 408 1362 1390 MCLK 20 MHz MST Outclk 0.357 MHz Outdata 0.357 MHz 20 MHz 20 MHz 13 12 11 10 9 8 7 6 (Vsync) (Hsync) Pixel Integration Pixel readout Trigger photodiode Reset Hold on all pixels Reset or integration Readout 1st row Transfer of the 1st row 1st pixel Reset Trigger photodiode readout Note: All on-chip timing circuits are reset at rise of MST, and the operations of trigger photodiode readout are stopped at this time. KMPDC0360EB 5 CMOS area image sensors S10830, S10834 (D) Image data readout MCLK 20 MHz MST Outclk 20 MHz Outdata 20 MHz (Vsync) 1 29 14029 43 15009 13 12 11 10 9 8 7 6 5 4 3 2 1 0 13 12 11 10 . . . 13 12 11 10 9 8 7 6 5 4 3 2 1 0 (Hsync) Reset Readout 1st row 1st pixel Pixel Pixel readout 2nd ... 1000th pixel Transfer of the 2nd row Readout 2nd row Reset Trigger photodiode Trigger photodiode readout KMPDC0361EB (E) Image readout end MCLK 20 MHz MST Outclk 20 MHz Outdata 20 MHz (Vsync) 1 56 0.357 MHz 0.357 MHz 3210 (Hsync) Pixel Reset Readout 1506th row 1000th pixel Pixel readout Trigger photodiode Integration Reset Trigger photodiode readout KMPDC0362EB (F) Image readout end (trigger photodiode) MCLK 20 MHz MST 1 21 0.357 MHz 0.357 MHz Outclk 20 MHz Outdata 20 MHz (Vsync) 129 9876543210 (Hsync) Reset Pixel Pixel readout Trigger photodiode Trigger photodiode readout Readout 1506th row 1000th pixel Reset Integration Reset Integration Readout Reset Readout Note: Just after image data is finished, the 1st readout of trigger photodiode is not valid, because integration time is shorter than others. KMPDC0363EB 6 CMOS area image sensors S10830, S10834 Output format (Ta=25 C, Vdd=5 V) With 100 termination (LVDS output mode) Parameter Differential output swing Offset voltage Current (100 termination) Symbol Vod Vos I100 Min. 247 - Typ. 1.2 3.5 Max. 454 - Unit mV V mA Min. - Typ. 2.4 0 Max. 0.4 Unit V V Without 100 termination (CMOS output mode) Output voltage Parameter High level Low level Symbol Vod Vos Dimensional outline (unit: mm) S10830 21.8 Scintillator 2.5 2.4 20.0 FOP 3.2 Photosensitive area 30.0 32.1 35.4 Connector Molex 52745-1497 1 14 2.0 4.7 CMOS chip 1.7 KMPDA0266EC Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Description Vdd Vss Outdata a Reserve Outdata b Reserve Outclk a Reserve Outclk b Reserve MST Reserve MCLK Reserve I/O I I O O O O I I - Function Power supply voltage (5 V) Ground Video output signal (LVDS, positive) Video output signal (LVDS, negative) Trigger signal (LVDS, positive) Trigger signal (LVDS, negative) Master start signal Master clock signal 7 CMOS area image sensors S10830, S10834 S10834 Entire view Connector (CL232-0001-4-50: 8 terminals) CMOS sensor Heat shrink tubing Cable Ferrite 1000 Pin no. Pin no. 1 Shroud Description 1 Vdd (5 V) 2 Vss (ground) 3 MST 4 Outdata a 5 Outdata b 6 Outclk a 7 Outclk b 8 MCLK KMPDA0252EB 25.0 CMOS sensor 5.3 13.0 39.0 KMPDA0253EB 8 CMOS area image sensors S10830, S10834 Photosensitive area Upper light-shielded pixels (766, 768, 770 pixels) 114 pixels 114 pixels 114 pixels Effective pixels (1000 x 1500 pixels) 1500 pixels X-ray irradiation monitoring photodiode Vertical shift register scanning direction Lower light-shielded pixels (1000 x 3 pixels) Horizontal shift register scanning direction KMPDC0327EC Information described in this material is current as of December, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1113E06 Dec. 2012 DN 9