S10830 - Hamamatsu Photonics K.K.

S10830 S10834

CMOS area image sensors

CMOS area image sensors for X-ray imaging

www.hamamatsu.com 1

Intra-oral X-ray imaging dental diagnosis

General X-ray imaging

Non-destructive inspection

Pixel size: 20 × 20 μm

1000 (H) × 1500 (V) pixel format

14-bit ADC (virtual dynamic range: 58 dB)

Frame rate: 0.9 frames/s (MCLK=20 MHz)

Image data acquisition by Vdd, Vss, MCLK and MST only

High resolution: 20 Lp/mm typ.

Global shutter operation

Photodiode placed outside the active area to monitor

x-ray irradiation

Structure

Absolute maximum ratings

Parameter Value Unit

Pixel size 20 × 20 μm

Pixel pitch 20 μm

Number of effective pixels 1000 (H) × 1500 (V) pixels

Number of light-shielded pixels Upper part: 766, 768, 770

Lower part: 1000 × 3 pixels

Image size 20 (H) × 30 (V) mm

Parameter Symbol Value Unit

Power supply Vdd -0.5 to +6 V

Input voltage Vi -0.5 to “Vdd + 0.5” (6 max.) V

Consumption current Idd 400 mA

Operating temperature Topr 0 to +50 °C

Storage temperature Tstg -20 to +70 °C

Total dose irradiation D 50 Gy

These products are components for incorporation into medi-

cal device.

S10830 is CMOS area image sensor suitable for intra-oral X-ray imaging in dental diagnosis. S10830 has 1.5 megapixels (1000

× 1500) with a pixel size of 20 × 20 μm. FOP (ﬁ ber optic plate) is used as an input window, making S10830 high image-

quality and long-term X-ray life. S10834 is an easy-to-use X-ray imaging module using S10830 with a cable. S10830 has 14-

bit ADC on chip and LVDS digital output signal. It is to contribute cost reduction in a user’s system. S10831 and S10835 (1300

× 1700 pixels) are also available.

Features Applications

CMOS area image sensors S10830, S10834

Recommended operating conditions

Electrical characteristics (Ta=25 °C,Vdd=5 V)

Parameter Symbol Min. Typ. Max. Unit

Power supply Vdd 4.75 5.0 5.5 V

Digital input voltage*1High Vsigi(H) 2.4 3.3 Vdd + 0.25 V

Low Vsigi(L) 0 - 0.4

*1: Vsigi(H) is a “High” period voltage of MST and MCLK, Vsigi(L) is a “Low” period voltage of MST and MCLK.

Parameter Symbol Min. Typ. Max. Unit

Master clock pulse frequency f(MCLK) 1 M 20 M 40 M Hz

Digital output format - LVDS differential output -

Digital output

frequency

Image sensor*2

f(DO) - f(MCLK) - Hz

Trigger photodiode*3- f(MCLK)/56 -

Digital output voltage*4V(DOmag) - 350 - mV

Digital output rise time*4 *5tr(DO) - 2 5 ns

Digital output fall time*4 *5tf(DO) - 2 5 ns

Video data rate Image sensor*6VR - f(MCLK)/14 - Hz

Trigger photodiode VR2 - f(MCLK)/7168 - Hz

Start pulse interval*7T(ST-I) 22.7 M - - MCLK

Integration time Image sensor*8

-PW(MST) + 394/f(MCLK) s

Trigger photodiode*96608/f(MCLK) s

Consumption current Image sensor*10 P1 - 55 110 mA

Trigger photodiode*11 P2 - 25 50 mA

*2: Refer to “Timing chart”, Image data readout.

*3: Refer to “Timing chart”, Trigger photodiode data readout.

*4: The output voltage difference between LVDS differential terminals with 100 Ω termination

*5: The time in output from 10% to 90% or from 90% to 10% with 2 m long cable

*6: It takes 14 master clock pulse cycles to read out 1 pixel

*7: It takes 22.7 M master clock pulse cycles to read out 1 frame of an image. The readout of the next frame must be started after

ﬁ nishing the readout of previous frame.

*8: Refer to “Timing chart”, PW(MST) is “Low” pulse width of MST (master start pulse).

e.g.) When the PW(MST) is 10 ms and f(MCLK) is 20 MHz:

Integration time = 10 ms + 394/20 M = 10.0197 ms

*9: Refer to “Timing chart”, The trigger photodiode is output every 7168 MCLK cycles. The integration time is 6608 MCLK cycles, and

560 MCLK cycles are used for the reset period of trigger photodiode.

e.g.) When the f(MCLK) is 20 MHz:

Integration time = 6608/20 M = 330.4 μs

*10: The consumption current of image sensor chip only. f(MCLK)=20 MHz

*11: The consumption current of image sensor chip only. Without 100 Ω termination (see “Output format” in P.7). f(MCLK)=20 MHz

1.0

0.8

0.9

(X-ray source: 60 kVp, filter: ABS 1.5 mmt)

0.5

0.4

0.7

0.6

0.3

0.2

0.1

0.0

0462 8 12 1410

Spatial frequency (line pairs/mm)

16 18 20

CTF

6000 (X-ray source: 60 kVp, filter: ABS 1.5 mmt)

4000

2000

0 100 200

Absorbed dose (µGy)

300 400

Output (LSB)

1500

1000

500

Output voltage (mV)

Resolution (S10834) Response (S10834)

KMPDB0358EA KMPDB0359EA

CMOS area image sensors S10830, S10834

Electrical and optical characteristics (image sensor, Ta=25 °C,Vdd=5 V)

Electrical and optical characteristics (trigger photodiode, Ta=25 °C,Vdd=5 V)

Electrical and optical characteristics (A/D converter, Ta=25 °C,Vdd=5 V)

Parameter Symbol Min. Typ. Max. Unit

Dark output voltage (effective pixel)*12 Vdark - 50 120 mV/s

Ddark - 200 490 LSB/s

Saturation output voltage Vsat 0.8 1.2 - V

Dsat 3280 4900 - LSB

Random noise*13 VRN - 1500 4500 μV rms

DRN - 6.2 18 LSB rms

Dynamic range*14 DR 45 58 - dB

Sensitivity*15 VRES 2.3 3.4 4.5 mV/μGy

DRES 9.4 14 18 LSB/μGy

Saturation dose*15 Lsat 180 350 530 μGy

Photo response non-uniformity*12 *16 PRNU - - ±30 %

Blemish

Point

defect*17

White spot

--20

Black spot - - 20

Cluster defect*18 --3

Big cluster defect*19 --0

Defect line*20 DL - - 15 lines

X-ray resolution Reso 15 20 - Lp/mm

*12: Average value. Excluding defect pixels.

*13: Integration time = 1 s

*14: Dynamic range =

*15: 60 kV tube voltage, no Al plate at X-ray emission

*16: PRNU (%) = ΔV / V × 100

V: average of pixel outputs, ΔV: difference between V and min. or max. output

*17: White spot > 1.2 V/s (4900 LSB/s) at effective pixel: 10 times of the maximum of dark output

Black spot > 50% reduction in response relative to adjacent pixels, measured at half of the saturation output

*18: Continuous 2 to 9 point defects

*19: Continuos 10 or more point defects. (except a defect line)

*20: A defect line consists of 10 or more point defects in 1 pixel width.

Parameter Symbol Min. Typ. Max. Unit

Saturation voltage Vsat - 2.2 2.9 V

Dsat - 450 590 LSB

Random noise VRN - 10 - mV rms

DRN - 2 - LSB rms

Sensitivity*21 VRES - 6.8 × 102- mV/μGy

DRES - 200 - LSB/μGy

Offset of A/D converter - - 430 - LSB

*21: Integration time=330 μs, f(MCLK)=20 MHz

Parameter Symbol Image sensor Trigger photodiode Unit

Resolution RESO 14 10 bit

Connection time tCON 1/14 × f(MCLK) 1/7168 × f(MCLK) s

Conversion voltage range - 0 to 4 0 to Vdd V

20 Saturation output voltage

Random noise

× log

CMOS area image sensors S10830, S10834

Block diagram

Trigger photodiode

Column CDS

Horizontal shift register

Effective pixels

(1000 × 1500) Amp

10-bit

ADC

Outclk

Outdata

MCLK MST Vdd Vss

14-bit

ADC

Amp

Vertical shift register

Timing generator

KMPDC0356EB

KMPDC0357EB

Timing chart

Total timing chart

20 MHz (3.3 V)

X-ray

MCLK(input)

MST (input)

OUTCLK (output)

OUTDATA (output)

State of trigger photodiode

State of image sensor

1000 × 1500 (+6) pixels

MCLK

D3 D2 D1 D0

MST

OUTDATA

Reset

(electrical shutter is closed)

Integration

(electrical shutter is open)

Readout image

Tra n.

2nd

row

Tra n.

3rd

row

Tra n.

1506th

row

. . .

Read

1506th

row

Tra n.

1st

row

Read

1st

row

Read

2nd

row

Reset (electrical shutter is closed)

Reset only Integration and readoutIntegration and readout

Data

(Trig.)

Data

(Trig.) Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

(Trig.)

Data

1st

row

Data

2nd

row

. . .

Data

1506th

row

0.357 MHz

(A) Continuously checking some X-ray radiation with monitoring the data of trigger photodiode by an external circuit.

(B) The MST should be set at low and integration of each pixel is to start when X-ray input is detected.

The Integration time is almost same as the low width of the MST. It can be controlled by an external circuit

(software, firmware, etc.).

(D) Each readout row has a header part, which consists of 28 high levels of the OUTDATA.

(E), (F) After completion readout, the OUTCLK and the OUTDATA automatically move to state of trigger photodiode.

0.357 MHz 20 MHz LVDS

(A)

(B) (C)

(D) (E), (F)

CMOS area image sensors S10830, S10834

KMPDC0358EA

KMPDC0359EA

KMPDC0360EB

(A) Trigger photodiode data readout

(B) Image data integration start

20 MHz

MCLK

MST

Outclk

Outdata

(Vsync)

(Hsync)

Pixel

Trigger photodiode

readout

→0.357 MHz

1 21 129

→0.357 MHz

Integration Reset

Readout

Reset

Integration

Reset

Readout

0123456789

20 MHz

114

MCLK

MST

Outdata

Outclk

(Vsync)

(Hsync)

Pixel

Trigger photodiode

readout

Reset Integration

Reset or integration

→

0.357 MHz

→

0.357 MHz

20 MHz

1 4 10 408 1362 1390

MCLK

MST

Outdata

Outclk

(Vsync)

(Hsync)

Pixel

Trigger photodiode

Pixel readout

Trigger photodiode

readout

Note: All on-chip timing circuits are reset at rise of MST, and the operations of trigger photodiode readout are stopped at this time.

Integration Reset

Reset or integration

Hold on

all pixels

Transfer of

the 1st row

Reset

Readout

1st row

1st pixel

→

20 MHz

→

20 MHz

→

0.357 MHz

→

0.357 MHz

6789

10111213

CMOS area image sensors S10830, S10834

KMPDC0361EB

KMPDC0363EB

(D) Image data readout

(E) Image readout end

(F) Image readout end (trigger photodiode)

20 MHz

MCLK

MST

Outdata

Outclk

(Vsync)

(Hsync)

Pixel

Trigger photodiode

Pixel readout

Trigger photodiode

readout

Reset

Transfer

of the

2nd row

Reset

Readout

1st row

Readout

2nd row

1st pixel 1000th pixel

1011

1213

. . .

1011

1213

12943

1011

1213

→

20 MHz

→

20 MHz

2nd ...

14029 15009

20 MHz

MCLK

MST

Outdata

Outclk

(Vsync)

(Hsync)

Pixel

Trigger photodiode

Pixel readout

Trigger photodiode

readout

Reset

Reset Integration

Readout

1506th row

1000th pixel

156

→

20 MHz

→

20 MHz

→

0.357 MHz

→

0.357 MHz

MCLK

MST

Outdata

Outclk

(Vsync)

(Hsync)

Pixel

Trigger photodiode

Pixel readout

Trigger photodiode

readout

Note: Just after image data is finished, the 1st readout of trigger photodiode is not valid, because integration time is shorter than others.

Reset

Reset Integration Integration

Readout

Reset

Readout

1506th row

1000th pixel

1 21 129

0.357 MHz

20 MHz

20 MHz 0123456789

KMPDC0362EB

CMOS area image sensors S10830, S10834

Output format (Ta=25 °C,Vdd=5 V)

Parameter Symbol Min. Typ. Max. Unit

Differential output swing Vod 247 - 454 mV

Offset voltage Vos - 1.2 - V

Current (100 Ω termination) I100 - 3.5 - mA

Parameter Symbol Min. Typ. Max. Unit

Output voltage High level Vod - 2.4 - V

Low level Vos - 0 0.4 V

With 100 Ω termination (LVDS output mode)

Without 100 Ω termination (CMOS output mode)

Dimensional outline (unit: mm)

S10830

20.0

2.5 2.4

21.8

Photosensitive

area

Connector

Molex 52745-1497

30.0

32.1

35.4

3.2

1.7

2.0

4.7

1 14

FOP

CMOS chip

Scintillator

KMPDA0266EC

Pin no. Description I/O Function

1 Vdd I Power supply voltage (5 V)

2 Vss I Ground

3 Outdata a O Video output signal (LVDS, positive)

4 Reserve -

5 Outdata b O Video output signal (LVDS, negative)

6 Reserve -

7 Outclk a O Trigger signal (LVDS, positive)

8 Reserve -

9 Outclk b O Trigger signal (LVDS, negative)

10 Reserve -

11 MST I Master start signal

12 Reserve -

13 MCLK I Master clock signal

14 Reserve -

Pin connections

CMOS area image sensors S10830, S10834

S10834

1000

Cable

Connector

(CL232-0001-4-50: 8 terminals) CMOS sensor

ShroudPin no. 1

Heat shrink tubing

Ferrite

Pin no. Description

1 Vdd (5 V)

2 Vss (ground)

3MST

4Outdata a

5Outdata b

6 Outclk a

7 Outclk b

8 MCLK

KMPDA0252EB

KMPDA0253EB

25.0

39.0

5.3

13.0

Entire view

CMOS sensor

CMOS area image sensors S10830, S10834

Cat. No. KMPD1113E06 Dec. 2012 DN

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

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Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact

us for the delivery specification sheet to check the latest information.

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of December, 2012.

Photosensitive area

114 pixels 114 pixels

Upper light-shielded pixels

(766, 768, 770 pixels)

114 pixels

1500 pixels

X-ray irradiation

monitoring photodiode

Lower light-shielded pixels

(1000 × 3 pixels)

Effective pixels

(1000 × 1500 pixels)

Horizontal shift register

scanning direction

Vertical shift register

scanning direction

KMPDC0327EC