Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 1 1Publication Order Number:
DAP222M3/D
DAP222M3T5G
Preferred Device
Product Preview
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SOT−723 package which is designed
for low power surface mount applications, where board space is at a
premium.
•Fast trr
•Low CD
•ESD Performance: Human Body Model; 2000 V,
Machine Model 200 V
•Available in 4 mm Tape and Reel
•This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage VR80 V
Peak Reverse Voltage VRM 80 V
Forward Current IF100 mA
Peak Forward Current IFM 300 mA
Peak Forward Surge Current IFSM
(Note 1) 2.0 A
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD260 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg −55 ~ +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. t = 1.0 S.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
DAP222M3T5G SOT−723 8000/Tape & Reel
SOT−723
CASE 631AA
STYLE 4
MARKING
DIAGRAM
12
3
P9 M
P9 = Specific Device Code
M = Date Code
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ANODE
3
12
CATHODE
DAP222M3T5G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current IRVR = 70 V − 0.1 A
Forward Voltage VFIF = 100 mA − 1.2 V
Reverse Breakdown Voltage VRIR = 100 A 80 − V
Diode Capacitance CDVR = 6.0 V, f = 1.0 MHz − 3.5 pF
Reverse Recovery Time trr
(Note 2) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR− 4.0 ns
2. trr Test Circuit for DAP222 in Figure 4.
DAP222M3T5G
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3
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
1.75
0
VR, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (µA)
TA = 85°C
TA = −40°C
TA = 25°C
A
RL
trtp
t
10%
90%
VRtp = 2 s
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit
DAP222M3T5G
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4
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE B
1.0
0.039
mm
inches
SCALE 20:1
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L0.15 0.20 0.25
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
MIN NOM MAX
INCHES
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 (0.0032) Y
2X
E
12
3
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
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DAP222M3/D
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