ALD110903 - Advanced Linear Devices

EPAD

ADVANCED

LINEAR

DEVICES, INC.

ALD110802/ALD110902

ORDERING INFORMATION

*N/C pins are internally connected.

Connect to V- to reduce noise

PC, SC PACKAGES

PA, SA PACKAGES

PIN CONFIGURATION

www.aldinc.com

GENERAL DESCRIPTION

ALD1 10802/ALD1 10902 are monolithic quad/dual N-Channel MOSFETS

matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

The ALD110802/ALD110902 MOSFETS are designed and built for ex-

ceptional device electrical characteristics matching. Since these devices

are on the same monolithic chip, they also exhibit excellent tempco tracking

characteristics. They are versatile circuit elements useful as design com-

ponents for a broad range of analog applications, such as basic building

blocks for current sources, differential amplifier input stages, transmis-

sion gates, and multiplexer applications. For most applications, connect

V- and N/C pins to the most negative voltage potential in the system and

V+ pin to the most positive voltage potential (or left open unused). All

other pins must have voltages within these voltage limits.

The ALD1 10802/ALD1 10902 devices are built for minimum offset voltage

and differential thermal response, and they are suited for switching and

amplifying applications in <+0.1V to +10V systems where low input bias

current, low input capacitance and fast switching speed are desired, as

these devices exhibit well controlled turn-off and sub-threshold charac-

teristics and can be biased and operated in the sub-threshold region.

Since these are MOSFET devices, they feature very large (almost infi-

nite) current gain in a low frequency, or near DC, operating environment.

The ALD110802/ALD110902 are suitable for use in very low operating

voltage or very low power (nanowatt), precision applications which re-

quire very high current gain, beta, such as current mirrors and current

sources. The high input impedance and the high DC current gain of the

Field Effect Transistors result from extremely low current loss through

the control gate. The DC current gain is limited by the gate input leakage

current, which is specified at 30pA at room temperature. For example,

DC beta of the device at a drain current of 3mA and input leakage current

of 30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Precision Gate Threshold Voltage of +0.2V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• VGS(th) match (VOS) to 10mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin 16-Pin 8-Pin 8Pin

Plastic Dip SOIC Plastic Dip SOIC

Package Package Package Package

ALD110802PC ALD110802SC ALD110902PA ALD110902SA

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

APPLICATIONS

• Ultra low power (nanowatt) analog and digital

circuits

• Ultra low operating voltage(<0.2V) circuits

• Sub-threshold biased and operated circuits

• Precision current mirrors and current sources

• Nano-Amp current sources

• High impedance resistor simulators

• Capacitive probes and sensor interfaces

• Differential amplifier input stages

• Discrete Voltage comparators and level shifters

• Voltage bias circuits

• Sample and Hold circuits

• Analog and digital inverters

• Charge detectors and charge integrators

• Source followers and High Impedance buffers

• Current multipliers

• Discrete Analog switches / multiplexers

N/C*

314

413

512

N/C*

V+

V-

V+

V-

ALD110802

M 4 M 3

M 1 M 2

V-

V- V-

V-

N/C*

ALD110902

M 1 M 2

V-

N/C*

V-

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

MATCHED PAIR MOSFET ARRAY VGS(th)= +0.2V

ALD110802/ALD110902 Advanced Linear Devices 2

Notes: 1 Consists of junction leakage currents

ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage, VDS 10.6V

Gate-Source voltage, VGS 10.6V

Power dissipation 500 mW

Operating temperature range PA, SA, PC, SC package 0°C to +70°C

Storage temperature range -65°C to +150°C

Lead temperature, 10 seconds +260°C

OPERATING ELECTRICAL CHARACTERISTICS

V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

Gate Threshold V oltage VGS(th) 0.18 0.20 0.22 V IDS =1µA

VDS = 0.1V

Offset Voltage VOS 210mV

VGS(th)1-VGS(th)2

Offset VoltageTempco TC ∆VOS 5µV/ °CV

DS1= VDS2

GateThreshold Voltage Tempco TC∆VGS(th) -1.7 mV/ °CI

D = 1µA

0.0 ID = 20µA, VDS = 0.1V

+1.6 ID = 40 µA

On Drain Current IDS (ON) 12.0 mA VGS = + 9.7V

3.0 VGS = + 4.2V

VDS = + 5V

Forward T ransconductance GFS 1.4 mmho VGS = +4.2V

VDS = + 9.2V

Transconductance Mismatch ∆GFS 1.8 %

Output Conductance GOS 68 µmho VGS = +4.2V

VDS = +9.2V

Drain Source On Resistance RDS (ON) 500 ΩVDS = 0.1V

VGS = +4.2V

Drain Source On Resistance ∆RDS (ON) 0.5 %

Mismatch

Drain Source Breakdown BVDSX 10 V IDS = 1.0µA

Voltage VGS = -0.8V

Drain Source Leakage Current1IDS (OFF) 10 100 pA VGS = -0.8V

4nAV

DS =10V, TA = 125°C

Gate Leakage Current1IGSS 330pAV

DS = 0V VGS = 10V

1nAT

A =125°C

Input Capacitance CISS 2.5 pF

Transfer Reverse Capacitance CRSS 0.1 pF

Turn-on Delay Time ton 10 ns V+ = 5V RL= 5KΩ

Turn-off Delay Time toff 10 ns V+ = 5V RL= 5KΩ

Crosstalk 60 dB f = 100KHz

ALD110802 / ALD110902

Parameter Symbol Min Typ Max Unit Test Conditions