Miniaturized Gate Drive Transformers Deliver MOSFET/IGBT gate power and timing signals simultaneously Directly drive high-side MOSFETs/IGBTs on busses up to 1200V Excellent risetime, overshoot, and peak current characteristics >8 mm minimum creepage and clearance from drive to gates Low profile planar package Available in through-hole and surface mount packages (contact engineering) * * * * * * Model Selection Table HiRel P/N MGDT 100 100 Package Style TH Useful Freq. Range (KHz) 100 ~ 500 Drive Magnetizing Leakage DC Resistance 2 Capacitance 2, 3 4 Excitation Inductance Inductance Drive Gates Drive-Gate Gate-Gate (nH MAX) (V*mS MAX) (mH MIN) (W MAX) (W MAX) (pF MAX) (pF MAX) 80 240 500 0.50 0.50 15 10 Transfer Ratio1 (+/-3%) 1:1:1 Absolute Maximum Ratings (All Models) Parameter Conditions Dielectric Withstand Voltage Drive-gate; 1 min Gate-gate; 1 min Limit(s) 3750 2500 Units VAC VAC Total Power Dissipation5 TA = 25C 2.0 W Operating Temperature Storage Temperature Continuous Continuous -40 ~ +85 -40 ~ +105 C C 1. 2. 3. 4. 5. Drive : Gate : Gate. TA = 25C. 100mV @ 100KHz across the Drive winding with all Gates open. 100mA @ 100KHz into the Drive winding with all Gates shorted. Derate at 33.3mW / C above 25C. 0.450 [11.43] MAX 0.150 [3.81] MIN 0.025 [0.64] SQR (6 PLS) 0.725 [18.42] MAX 3 MGDT 0.810 MAX [20.57] 0.100 [2.54] (3 PLS) 3 4 2 1 5 6 0.350 [8.89] DRIVE 2 4 1 5 GATES 6 0.650 [16.51] Units are inches [mm]. Tolerance on all dimensions is +/ -0.010 unless otherwise specified. Specifications are subject to change without notice. www.hirelsystems.com Hi-Rel Systems, Inc. 11100 Wayzata Boulevard Suite 501 Minnetonka, MN 55305 Phone: 952-544-1344 Fax: 952-544-1345 Date code 0229 sales@hirelsystems.com engineering@hirelsystems.com