5962R0923562VZA - Texas Instruments High-Performance Analog

LM4050QML

May 23, 2012

Precision Micropower Shunt Voltage Reference

General Description

The LM4050QML precision voltage reference is available in

a 10 Lead Ceramic SOIC package. The LM4050QML's de-

sign eliminates the need for an external stabilizing capacitor

while ensuring stability with a capacitive load, thus making the

LM4050QML easy to use. The LM4050-2.5QML has a 60 μA

minimum and 15 mA maximum operating current. The

LM4050-5.0QML has a 74 μA minimum and 15 mA maximum

operating current.

The LM4050QML utilizes fuse and zener-zap reverse break-

down voltage trim during wafer sort to ensure that the prime

parts have an accuracy of better than ±0.1% at 25°C.

Bandgap reference temperature drift curvature correction and

low dynamic impedance ensure stable reverse breakdown

voltage accuracy over a wide range of operating tempera-

tures and currents.

The LM4050QML operates over the temperature range of

-55°C to +125°C.

Features

■Low Dose Rate Qualified 100 krad(Si)

■SEFI Immune

■SET Immune with 60μF CLOAD

■CLOAD 0μF to 100μF

■Fixed reverse breakdown voltage of 2.500V, 5.000V

Key Specifications

LM4050-2.5QML

■ Output voltage tolerance IR

= 100μA±0.1% @ 25°C

■ Low temperature coefficient 15 ppm/°C

■ Low output noise 50 μVrms(typ)

■ Wide operating current range 60 μA to 15 mA

LM4050-5.0QML

■ Output voltage tolerance IR

= 100μA±0.1% @ 25°C

■ Low temperature coefficient 23 ppm/°C

■ Low output noise 100 μVrms(typ)

■ Wide operating current range 74 μA to 15 mA

Applications

■Control Systems

■Data Acquisition Systems

■Instrumentation

■Process Control

■Energy Management

Ordering Information

NS Part Number SMD Part Number NS Package Number Package Description

LM4050WG2.5RLQV

Low Dose Rate Qualified

5962R0923561VZA

100 krad(Si) WG10A 10LD Ceramic SOIC

LM4050WG2.5-MPR

Pre-Flight Prototype WG10A 10LD Ceramic SOIC

LM4050WG5.0RLQV

Low Dose Rate Qualified

5962R0923562VZA

100 krad(Si) WG10A 10LD Ceramic SOIC

LM4050WG5.0-MPR

Pre-Flight Prototype WG10A 10LD Ceramic SOIC

LM4050QML Precision Micropower Shunt Voltage Reference

Connection Diagram

10L Ceramic SOIC

30104101

Top View

See NS Package Number WG10A

Pin Descriptions

Pin Number Pin Name Function

1 GND/NC Ground or No Connect

2 GND/NC Ground or No Connect

3 GND/NC Ground or No Connect

4 GND/NC Ground or No Connect

5 GND Ground

6 GND/NC Ground or No Connect

7 GND/NC Ground or No Connect

8 GND/NC Ground or No Connect

9 GND/NC Ground or No Connect

10 VREF Reference Voltage

www.ti.com 2

LM4050QML

Absolute Maximum Ratings (Note 1)

Reverse Current 20 mA

Forward Current 10 mA

Power Dissipation (TA = 25°C) (Note 2)

10LD Ceramic SOIC Package 467 mW

Lead Temperature

(Soldering, 10 seconds)

Ceramic SOIC 260°C

Storage Temperature -65°C to +150°C

Package Weight (typical)

Ceramic SOIC 241mg

ESD Tolerance (Note 3) Class 2 (2000V)

Operating Ratings (Note 2)

Temperature Range -55°C ≤ TA ≤ +125°C

Reverse Current

LM4050-2.5QML 60 μA to 15 mA

LM4050-5.0QML 74 μA to 15 mA

Package Thermal Resistance

Package θJA

(Still Air)

θJA

(500LF/Min

Air flow)

θJC

10L Ceramic SOIC

Package on 2 layer,

1oz PCB

214°C/ W 147°C/ W 20.87°C/ W

Quality Conformance Inspection

MIL-STD-883, Method 5005 - Group A

Subgroup Description Temp ( C)

1 Static tests at +25

2 Static tests at +125

3 Static tests at -55

4 Dynamic tests at +25

5 Dynamic tests at +125

6 Dynamic tests at -55

7 Functional tests at +25

8A Functional tests at +125

8B Functional tests at -55

9 Switching tests at +25

10 Switching tests at +125

11 Switching tests at -55

12 Setting time at +25

13 Setting time at +125

14 Setting time at -55

3 www.ti.com

LM4050QML

LM4050-2.5QML Electrical Characteristics SMD: 5962R0923561

The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA.

Symbol Parameter Conditions Notes Typical

(Note 4)Min Max Units Sub-

groups

Reverse Breakdown Voltage IR = 100 μA 2.500 V

Reverse Breakdown Voltage

Tolerance

IR = 60µA

±2.5

mV 1

IR = 100μA ±2.5

IR = 1mA ±3.75

IR = 10mA ±10

IR = 15mA ±13

IR = 60µA

±5

mV 2

IR = 100μA ±5

IR = 1mA ±6.25

IR = 10mA ±12.5

IR = 15mA ±14

IR = 60µA

±4.5

mV 3

IR = 100μA ±4.5

IR = 1mA ±5.75

IR = 10mA ±13

IR = 15mA ±17.5

IRMIN Minimum Operating Current 40.5 60 μA1

65 μA2, 3

ΔVR/ΔT

Average Reverse Breakdown

Voltage Temperature

Coefficient

@ 25°C ≤ TA ≤ 125°C

IR = 60µA

(Note

±3 ±15

ppm/°C

IR = 100μA±3 ±16

IR = 1mA ±3 ±18

IR = 10mA ±4 ±20

IR = 15mA ±6 ±22

Average Reverse Breakdown

Voltage Temperature

Coefficient

@ −55°C ≤ TA ≤ 25°C

IR = 60µA

(Note

±3 ±18

IR = 100μA±3 ±19

IR = 1mA ±3.5 ±22

IR = 10mA ±10 ±32

IR = 15mA ±15 ±45

ZRReverse Dynamic Impedance IR = 1 mA, f = 120 Hz,

IAC = 0.1 IR

0.3 Ω

VNOutput Noise Voltage 0.1 Hz ≤ f ≤ 10 Hz 9 μVpp

10 Hz ≤ f ≤ 10KHz 50 μVrms

CLOAD Load Capacitor Stable Over Temperature (Note

6)60 0 100 µF

VHYST Thermal Hysteresis ΔT = −55°C to 125°C (Note

5)1 ppm

www.ti.com 4

LM4050QML

Post Radiation @ 25°C (Note 7)

The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA.

Symbol Parameter Conditions 30 krad 50 krad 100 krad Sub-

groups

Reverse Breakdown Voltage

Tolerance

IR = 60μA

Max +0.42% +0.67% +1.5% 1

IR= 100μA

IR = 1mA

IR = 10mA

IR = 15mA

Post Radiation Tempco (Note 8)

Symbol Parameter Conditions TYPICALS

30 krad 50 krad 100 krad Units

ΔVR/ΔT

Average Reverse Breakdown

Voltage Temperature Coefficient

Drift @ 25°C ≤ TA ≤ 125°C

60μA ≤ IR ≤ 15mA +41 +83 +144 ppm/°C

Average Reverse Breakdown

Voltage Temperature Coefficient

Drift @ −55°C ≤ TA ≤ 25°C

60μA ≤ IR ≤ 15mA +46 +87 +166 ppm/°C

Operational Life Test Delta Parameters

This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within the

electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, Sub-Group 5.

Symbol Parameter Conditions Note Min Max Units Temp

Reverse Breakdonwn

Voltage Tolerance

IR = 60µA

-0.873 0.873

mV 1

IR = 100µA -0.873 0.873

IR = 1mA -0.998 0.998

IR = 10mA -3.93 3.93

IR = 15mA -5 5

IRMIN

Minimum Operating

Current -0.623 0.623 µA 1

5 www.ti.com

LM4050QML

LM4050-5.0QML Electrical Characteristics SMD: 5962R0923562

The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA.

Symbol Parameter Conditions Notes Typical

(Note 4)Min Max Units Sub-

groups

Reverse Breakdown Voltage IR = 100 μA 5.000 V

Reverse Breakdown Voltage

Tolerance

IR = 74µA

±5.0

mV 1

IR = 100μA ±5.0

IR = 1mA ±8

IR = 10mA ±18

IR = 15mA ±20

IR = 74µA

±10

mV 2

IR = 100μA ±10

IR = 1mA ±12

IR = 10mA ±22.5

IR = 15mA ±28

IR = 74µA

±9

mV 3

IR = 100μA ±9

IR = 1mA ±11.5

IR = 10mA ±29

IR = 15mA ±37

IRMIN Minimum Operating Current 53 70 μA1

74 μA2, 3

ΔVR/ΔT

Average Reverse Breakdown

Voltage Temperature

Coefficient

@ 25°C ≤ TA ≤ 125°C

IR = 74µA

(Note

±9 ±23

ppm/°C

IR = 100μA±9 ±25

IR = 1mA ±10 ±28

IR = 10mA ±11 ±35

IR = 15mA ±11 ±40

Average Reverse Breakdown

Voltage Temperature

Coefficient

@ −55°C ≤ TA ≤ 25°C

IR = 74µA

(Note

±10 ±25

IR = 100μA±10 ±29

IR = 1mA ±10 ±34

IR = 10mA ±15 ±45

IR = 15mA ±20 ±60

ZRReverse Dynamic Impedance IR = 1 mA, f = 120 Hz,

IAC = 0.1 IR

0.5 Ω

VNOutput Noise Voltage 10 Hz ≤ f ≤ 10KHz 100 μVrms

CLOAD Load Capacitor Stable Over Temperature (Note

6)60 0 100 µF

VHYST Thermal Hysteresis ΔT = -55°C to 125°C (Note

5)20 ppm

www.ti.com 6

LM4050QML

Post Radiation @ 25°C (Note 7)

The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA.

Symbol Parameter Conditions 30 krad 50 krad 100 krad Sub-

groups

Reverse Breakdown Voltage

Tolerance

IR = 74μA

Max +0.37% +0.61% +1.75% 1

IR= 100μA

IR = 1mA

IR = 10mA

IR = 15mA

Post Radiation Tempco (Note 8)

Symbol Parameter Conditions TYPICALS

30 krad 50 krad 100 krad Units

ΔVR/ΔT

Average Reverse Breakdown

Voltage Temperature Coefficient

Drift @ 25°C ≤ TA ≤ 125°C

74μA ≤ IR ≤ 15mA +87 +166 +387 ppm/°C

Average Reverse Breakdown

Voltage Temperature Coefficient

Drift @ −55°C ≤ TA ≤ 25°C

74μA ≤ IR ≤ 15mA +96 +162 +343 ppm/°C

Operational Life Test Delta Parameters

This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within the

electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, Sub-Group 5.

Symbol Parameter Conditions Note Min Max Units Temp

Reverse Breakdonwn

Voltage Tolerance

IR = 74µA

−0.8 0.8

mV 1

IR = 100µA −0.8 0.8

IR = 1mA −0.84 0.84

IR = 10mA −1.6 1.6

IR = 15mA −2.6 2.6

IRMIN

Minimum Operating

Current −0.623 0.623 µA 1

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed

specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test

conditions.

Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to

ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax − TA)/θJA or the

number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050QML, TJmax = 125°C, and the typical thermal resistance (θJA), when board

mounted, is 214°C/W for the 10 Lead Ceramic SOIC package.

Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.

Note 4: Typicals are at TA = 25°C and represent most likely parametric norm.

Note 5: Thermal hysteresis is defined as the change in voltage measured at +25°C after cycling to temperature -55°C and the 25°C measurement after cycling

to temperature +125°C.

Where: VHYST = Thermal hysteresis expressed in ppm

VR = Nominal preset output voltage

VR1 = VR before temperature fluctuation

VR2 = VR after temperature fluctuation.

Note 6: Capacitive load not required but improves SET stability. This parameter is guaranteed by design and/or characterization and is not tested in production.

Note 7: Pre and post irradiation limits are identical to those listed under electrical characteristics except as listed in the post radiation table.

Note 8: Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table.

7 www.ti.com

LM4050QML

Typical Performance Characteristics

Output Impedance vs Frequency

30104110

Output Impedance vs Frequency

30104111

Reverse Characteristics and

Minimum Operating Current

30104112

2.5V Thermal Hysteresis

30104129

5.0V Thermal Hysteresis

30104130

www.ti.com 8

LM4050QML

Typical Radiation Characteristics

2.5V Low Dose Rate Drift at 10 mrad(Si)/s

30104123

5V Low Dose Rate Drift at 10 mrad(Si)/s

30104124

9 www.ti.com

LM4050QML

Start-Up Characteristics

30104105

LM4050-2.5QML RS = 30k

30104107

LM4050-5.0QML RS = 30k

30104108

www.ti.com 10

LM4050QML

Functional Block Diagram

30104114

Applications Information

The LM4050QML is a precision micro-power curvature-cor-

rected bandgap shunt voltage reference. The LM4050QML is

available in the 10 Lead Ceramic SOIC package. The

LM4050QML has been designed for stable operation without

the need of an external capacitor connected between the “+”

pin and the “−” pin. If, however, a bypass capacitor is used,

the LM4050QML remains stable. The LM4050-2.5QML has a

60 μA minimum and 15 mA maximum operating current. The

LM4050-5.0QML has a 74 μA minimum and 15 mA maximum

operating current.

The typical thermal hysteresis specification is defined as the

change in +25°C voltage measured after thermal cycling. The

device is thermal cycled to temperature -55°C and then mea-

sured at 25°C. Next the device is thermal cycled to tempera-

ture +125°C and again measured at 25°C. The resulting

VOUT delta shift between the 25°C measurements is thermal

hysteresis. Thermal hysteresis is common in precision refer-

ences and is induced by thermal-mechanical package stress.

Changes in environmental storage temperature, operating

temperature and board mounting temperature are all factors

that can contribute to thermal hysteresis.

In a conventional shunt regulator application (Figure 1) , an

external series resistor (RS) is connected between the supply

voltage and the LM4050QML. RS determines the current that

flows through the load (IL) and the LM4050QML (IQ). Since

load current and supply voltage may vary, RS should be small

enough to supply at least the maximum guaranteed IRMIN

(spec. table) to the LM4050QML even when the supply volt-

age is at its minimum and the load current is at its maximum

value. When the supply voltage is at its maximum and IL is at

its minimum, RS should be large enough so that the current

flowing through the LM4050QML is less than 15 mA.

RS is determined by the supply voltage, (VS), the load and

operating current, (IL and IQ), and the LM4050QML's reverse

breakdown voltage, VR.

Radiation Environments

Careful consideration should be given to environmental con-

ditions when using a product in a radiation environment.

TOTAL IONIZING DOSE

Radiation hardness assured (RHA) products are those part

numbers with a total ionizing dose (TID) level specified in the

Ordering Information table on the front page. Testing and

qualification of these products is done on a wafer level ac-

cording to MIL-STD-883, Test Method 1019. Wafer level TID

data is available with lot shipments.

Testing and qualification is performed at the 30, 50 and 100

krad TID levels at a dose rate of 10 mrad/s, using a 1.5X

overtest at each TID level. For the 30 krad level units are

tested to 50 krad, for 50 krad units are tested to 80 krad and

for 100 krad units are tested to 150 krad, with all parameters

remaining inside the post irradiation test limits.

SINGLE EVENT EFFECTS (SEE)

One time single event effects characterization was performed

according to EIA/JEDEC Standard, EIA/JEDEC57.

A test report is available upon request.

SINGLE EVENT TRANSIENTS (SET)

With a 60 µF capacitor on the output, no single event tran-

sients were seen at the highest linear energy transfer (LET)

tested: 59 MeV-cm2/mg.

SET characterization with other capacitor values is in the SEE

report, available upon request.

SINGLE EVENT FUNCTIONAL INTERRUPT (SEFI)

No single event functional interrupts were detected to the

highest linear energy transfer (LET) tested: 100 MeV-cm2/mg.

11 www.ti.com

LM4050QML

Typical Applications

30104115

FIGURE 1. Shunt Regulator

30104120

FIGURE 2. The LM4050QML as a power supply and reference

www.ti.com 12

LM4050QML

30104119

FIGURE 3. The LM4050QML as a power supply and reference

The LM4050QML is a good choice as a power regulator for the DAC121S101QML or ADC128S102QML. The minimum resistor

value in the circuit of Figure 2 or Figure 3 should be chosen such that the maximum current through the LM4050QML does not

exceed its 15 mA rating. The conditions for maximum current include the input voltage at its maximum, the LM4050QML voltage

at its minimum, the resistor value at its minimum due to tolerance, and the DAC121S101QML or ADC128S102QML draws zero

current. The maximum resistor value must allow the LM4050QML to draw more than its minimum current for regulation plus the

maximum DAC121S101QML or ADC128S102QML current in full operation. The conditions for minimum current include the input

voltage at its minimum, the LM4050QML voltage at its maximum, the resistor value at its maximum due to tolerance, and the

DAC121S101QML or ADC128S102QML draws its maximum current. These conditions can be summarized as

R(min) = ( VIN(max) − VZ(min) / (IA(min) + IZ(max)

and

R(max) = ( VIN(min) − VZ(max) / (IA(max) + IZ(min)

where VZ(min) and VZ(max) are the nominal LM4050QML output voltages ± the LM4050QML output tolerance over temperature,

IZ(max) is the maximum allowable current through the LM4050QML, IZ(min) is the minimum current required by the LM4050QML

for proper regulation, IA(max) is the maximum DAC121S101QML or ADC128S102QML supply current, and IA(min) is the minimum

DAC121S101QML or ADC128S102QML supply current.

13 www.ti.com

LM4050QML

30104117

FIGURE 4. Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage.

Nominal clamping voltage is ±11.5V (LM4050QML's reverse breakdown voltage +2 diode VF).

30104118

FIGURE 5. Protecting Op Amp input. The bounding voltage is ±4V with the LM4050-2.5QML

(LM4050QML's reverse breakdown voltage + 3 diode VF).

www.ti.com 14

LM4050QML

30104121

30104122

FIGURE 6. Precision 1 μA to 1 mA Current Sources

15 www.ti.com

LM4050QML

Revision History

Date Released Revision Section Changes

08/20/2010 A Initial Release New Product Low Dose Qualified LM4050WG2.5RLQV

Initial Release

01/20/2012 B

General Description,

Features, Key Specifications,

Ordering Table, Operating

Ratings, Package Thermal

Table, Electrical Section

General Description, Features, Key Specifications,

Ordering Table, Operating Ratings, Package Thermal

Table, Electrical Section — Added the 5.0 V option

information for all sections. Added new NSIDS

LM4050WG5.0RLQV and LM4050WG5.0–MPR Voltage

option to data sheet. Revision A will be Archived.

05/23/2012 C Electrical Section

Electrical Section — Updated Delta Vr/Delta T for typical

limits for both the 2.5 and 5.0 versions. Revision B will be

Archived.

www.ti.com 16

LM4050QML

Physical Dimensions inches (millimeters) unless otherwise noted

10 Lead Ceramic SOIC

NS Package Number WG10A

17 www.ti.com

LM4050QML

Notes

LM4050QML Precision Micropower Shunt Voltage Reference

www.ti.com

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,

and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should

obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are

sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.

TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard

warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where

mandated by government requirements, testing of all parameters of each product is not necessarily performed.

TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and

applications using TI components. To minimize the risks associated with customer products and applications, customers should provide

adequate design and operating safeguards.

TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,

or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information

published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a

warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual

property of the third party, or a license from TI under the patents or other intellectual property of TI.

Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied

by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive

business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional

restrictions.

Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all

express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not

responsible or liable for any such statements.

TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably

be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing

such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products

and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be

provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in

such safety-critical applications.

TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are

specifically designated by TI as military-grade or "enhanced plastic."Only products designated by TI as military-grade meet military

specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at

the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.

TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are

designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated

products in automotive applications, TI will not be responsible for any failure to meet such requirements.

Following are URLs where you can obtain information on other Texas Instruments products and application solutions:

Products Applications

Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive

Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications

Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers

DLP®Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps

DSP dsp.ti.com Energy and Lighting www.ti.com/energy

Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial

Interface interface.ti.com Medical www.ti.com/medical

Logic logic.ti.com Security www.ti.com/security

Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense

Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video

RFID www.ti-rfid.com

OMAP Mobile Processors www.ti.com/omap

Wireless Connectivity www.ti.com/wirelessconnectivity

TI E2E Community Home Page e2e.ti.com

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265