This is information on a product in full production.
April 2015 DocID023753 Rev 4 1/19
STGW40H120DF2,
STGWA40H120DF2
Trench gate field-stop IGBT, H series
1200 V, 40 A high speed
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•High speed switching series
•Minimized tail current
•V
CE(sat)
= 2.1 V (typ.) @ I
C
= 40 A
•5 µs minimum short circuit withstand time at
T
J
=150 °C
•Safe paralleling
•Very fast recovery antiparallel diode
•Low thermal resistance
Applications
•Uninterrup tib le powe r suppl y
•Welding machines
•Photovoltaic inverters
•Power factor correction
•High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the improved
H series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
frequency converters. Furthermore, a slightly
positive V
CE(sat)
temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
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Table 1. Device summary
Order code Marking Package Packing
STGW40H120DF2 G40H120DF2 TO-247 Tube
STGWA40H120DF2 G40H120DF2 TO-247 long leads Tube
www.st.com
Contents STGW40 H12 0DF2, STG WA 40H1 20DF2
2/19 DocID023753 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1 T O-247 package i n formation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.2 T O-247 long leads p ackage informat ion . . . . . . . . . . . . . . . . . . . . . . . . . 16
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID023753 Rev 4 3/19
STGW40H120DF2, STGWA40H120DF2 Electrical ratings
19
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 1200 V
I
C
Continu ous collec tor current at T
C
= 25 °C 80 A
Continu ous collec tor current at T
C
= 100 °C 40 A
I
CP (1)
1. Pulse width limited by maximum junction temperature.
Pulsed collector current 160 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continu ous collec tor current at T
C
= 25 °C 80 A
Continu ous collec tor current at T
C
= 100 °C 40 A
I
FP (1)
Pulsed forward current 160 A
P
TOT
Total dissipation at T
C
= 25 °C 468 W
T
J
Operating junction temperature – 55 to 175 °C
T
STG
Storage temperature range – 55 to 150
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance jun ction -cas e IGBT 0.32 °C/W
R
thJC
Thermal resistance juncti on -cas e dio de 1.3 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW40H120DF2, STGWA40H120DF2
4/19 DocID023753 Rev 4
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 1200 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 40 A 2.1 2.6
V
V
GE
= 15 V, I
C
= 40 A
T
J
= 125 °C 2.4
V
GE
= 15 V, I
C
= 40 A
T
J
= 175 °C 2.5
V
F
Forward on-voltage
I
F
= 40 A 3.9 4.9
VI
F
= 40 A, T
J
= 125 °C 3.05
I
F
= 40 A, T
J
= 175 °C 2.8
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 2 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 1200 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-3200- pF
C
oes
Output capacitance - 220 - pF
C
res
Reverse transfer
capacitance -80-pF
Q
g
Total gate charge V
CC
= 960 V, I
C
= 40 A,
V
GE
= 15 V, see Figure 30
-158-nC
Q
ge
Gate-emitter charge - 17 - nC
Q
gc
Gate- collector charge - 85 - n C
DocID023753 Rev 4 5/19
STGW40H120DF2, STGWA40H120DF2 Electrical characteristics
19
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 600 V, I
C
= 40 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 31
18 - ns
t
r
Current rise time 37 - ns
(di/dt)
on
Turn-on current slope 1755 - A/µs
t
d(off)
Turn-off delay time 152 - ns
t
f
Current fall time 83 - ns
E
on
Turn-on switching losses 1 - mJ
E
off(1)
1. Turn-off losses include also the tail of the collector current.
Turn-off switching losses 1.32 - mJ
E
ts
Total switching losses 2.32 - mJ
t
d(on)
Turn-on delay time
V
CE
= 600 V, I
C
= 40 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 31
36 - ns
t
r
Current rise time 20 - ns
(di/dt)
on
Turn-on current slope 1580 - A/µs
t
d(off)
Turn-off delay time 161 - ns
t
f
Current fall time 190 - ns
E
on
Turn-on switching loss es 1.81 - mJ
E
off(1)
Turn-off switching losses 2.46 - mJ
E
ts
Total switching losses 4.27 - mJ
t
sc
Short-circ uit withstand time V
CE
= 600 V, V
GE
= 15 V,
T
J
= 150 °C, 5-µs
Table 7. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 40 A, V
R
= 600 V,
di/dt=5 00 A/µs, V
GE
= 15 V,
see Figure 31
-488-ns
Q
rr
Reverse recovery charge - 2.59 - µC
I
rrm
Reverse recovery current - 11.6 - A
dI
rr/
/dt Pea k rate of fall of reverse
recovery current during t
b
-406-A/µs
E
rr
Reverse recovery energy - 0.38 - mJ
t
rr
Reverse recovery time
I
F
= 40 A, V
R
= 600 V,
di/dt=5 00 A/µs, V
GE
= 15 V,
T
J
= 175 °C, see Figure 31
-484-ns
Q
rr
Reverse recovery charge - 4.5 - µC
I
rrm
Reverse recovery current - 18.6 - A
dI
rr/
/dt Pea k rate of fall of reverse
recovery current during t
b
-170-A/µs
E
rr
Reverse recovery energy - 0.94 - mJ
Electrical characteristics STGW40H120DF2, STGWA40H120DF2
6/19 DocID023753 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. case temperature
3WRW
7&&
:
9*( 97
-&
*,3*)65
,&
7&&
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9*(97-&
*,3*)65
Figure 4. Output characteristics (T
J
= 25°C) Figure 5. Output characteristics (T
J
= 175°C)
,&
9&(9
$
9*( 9
9
9
9
9
*,3*)65
,&
9&(9
$
9*( 9
9
9
9
9
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Figure 6. V
CE(sat)
vs. junction temperature Figure 7. V
CE(sat)
vs. collector current
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7-&
9
9*( 9
,& $
,& $
,& $
*,3*)65
9&(VDW
,
&$
9
9*( 9
7- &
7- &
7- &
*,3*59
DocID023753 Rev 4 7/19
STGW40H120DF2, STGWA40H120DF2 Electrical characteristics
19
Figure 8. Collector current vs. switching
frequency Figure 9. Forward bias safe operating area
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*
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&&
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*(
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-
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V
V
PV
6LQJOHSXOVH
7F &7- &
9*( 9
V
*,3*)65
Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward curren t
7- &
7- &
9*(9
,&
$
9&( 9
*,3*)65
,
)$
9
7- &
7- &
7
-
&
9)
*,3*59
Figure 12. Normalized V
GE(th)
vs junction
temperature Fig ure 13. Normali ze d V
(BR)CES
vs. junction
temperature
9*(WK
7-&
QRUP
,& P$
9&( 9*(
*,3*)65
9%5&(6
7-&
QRUP
,& P$
*,3*)65
Electrical characteristics STGW40H120DF2, STGWA40H120DF2
8/19 DocID023753 Rev 4
Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage
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&RHV
&UHV
&
9&(9
S)
*,3*59
9
&&
7
,
&
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9*(
9
*,3*59
Figure 16. Switching loss vs collector current Figure 17. Switching loss vs gate resistance
(
,&$
-
(21
9&& 99 *( 9
5* ȍ7- &
(2))
*,3*)65
(
5*ȍ
-
(2))
9&& 99*( 9
,& $7- &
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*,3*)65
Figure 18. Switching loss vs temperature Figure 19. Switching loss vs collector-emitter
voltage
(
7-&
-
(2))
9&& 99 *( 9
5* ȍ,& $
(21
*,3*)65
(
9&(9
-
(2))
7- &9*( 9
5* ȍ,& $
(21
*,3*)65
DocID023753 Rev 4 9/19
STGW40H120DF2, STGWA40H120DF2 Electrical characteristics
19
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
W
,&$
QV
WI
7- &9*( 9
5* ȍ9&& 9
WGRII
WGRQ
WU
*,3*)65
5*ȍ
WI
7- &9*( 9
,& $9&& 9
WGRII
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WGRQ
W
QV
*,3*)65
Figure 22. Reverse recovery current vs. diode
current slope Figure 23. Reverse recovery time vs. diode
current slope
,UP
GLGW$V
$
,) $9&& 9
9*( 9
&
7-
*,3*)65
WUU
GLGW$V
QV
,) $9&& 9
9*( 9
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7-
*,3*)65
Figure 24. Reverse recovery charge vs. diode
current slope Figure 25. Reverse recovery energy vs. diode
current slope
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GLGW$V
Q&
,) $9&& 9
9*( 9
&
7-
*,3*)65
(UU
GLGW$V
-
,) $9&& 9
9*( 9
&
7-
*,3*)65
Electrical characteristics STGW40H120DF2, STGWA40H120DF2
10/19 DocID023753 Rev 4
Figure 26. Short circuit time and current vs.V
GE
V
ƚ
^
/
^
s
ч
s
d
:
чϭϱϬ
Σ
$
,
)
$
WVF
,VF
*,3*59
DocID023753 Rev 4 11/19
STGW40H120DF2, STGWA40H120DF2 Electrical characteristics
19
Figure 27. Thermal impedance for IGBT
Figure 28. Thermal impedance for diode
=WK727B$
WS
V
.
6LQJOHSXOVH
G
*&
.
į
į
į
į
į
į
6,1*/(38/6(
W
S
=
WK
N5
WKM&
į W
S
Ϩ
Ϩ
=WK N5WKMF
į WSϨ
WSϨ
W
S
V
Test circuits STGW40H120DF2, STGWA40H120DF2
12/19 DocID023753 Rev 4
3 Test circuits
Figure 29. Test circuit for inductive load
switching Figure 30. Gate charge test circuit
Figure 31. S witc hin g wavef orm Figure 32. Diod e reverse recovery wave for m
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N
N
N
N
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UU
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V
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UU
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550
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550
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DocID023753 Rev 4 13/19
STGW40H120DF2, STGWA40H120DF2 Package information
19
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package information STGW40H120DF2, STGWA40H120DF2
14/19 DocID023753 Rev 4
4.1 TO-247 package information
Figure 33. TO-247 package outline
B+
DocID023753 Rev 4 15/19
STGW40H120DF2, STGWA40H120DF2 Package information
19
Table 8. TO-247 package mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package information STGW40H120DF2, STGWA40H120DF2
16/19 DocID023753 Rev 4
4.2 TO-247 long leads package information
Figure 34. TO-247 long leads package outl ine
8463846_A_F
DocID023753 Rev 4 17/19
STGW40H120DF2, STGWA40H120DF2 Package information
19
Table 9. TO-247 long leads package mechanical data
Dim. mm
Min. Typ. Max.
A4.905.005.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b1.16 1.26
b2 3.25
b3 2.25
c0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e5.345.445.54
L 19.80 19.92 20.10
L1 4.30
P3.503.603.70
Q5.60 6.00
S6.056.156.25
Revision history STGW40H120DF2, STGWA40H120DF2
18/19 DocID023753 Rev 4
5 Revision history
Table 10. Document revision history
Date Revision Changes
03-Oct-2012 1 Initial release.
29-Jan-2014 2
Updated features in cover page.
Updated Table 4: Static characteristics, Table 5: Dynamic
characteristics and Table 7: Diode switching characteristics
(inductive load).
Minor text chan ges .
24-Mar-2014 3
Updated titl e and des cri pti on in cover p ag e.
Updated Table 4: Static characteristics, Table 5: Dynamic
characteristics and Table 7: Diode switching characteristics
(inductive load).
Added Section 2.1: Electrical ch aracteristic s (cur ves).
31-Mar-2015 4
Added device in TO-247 long leads
Updated 4: Packag e inform at ion
Updated Figure 7, Figure 11, Figure 14, Figure 15, Figure 20,
Figure 21 and added Figure 26.
Minor text chan ges .
DocID023753 Rev 4 19/19
STGW40H120DF2, STGWA40H120DF2
19
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