AVD150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG A .025 x 45 DESCRIPTION: 4x .062 x 45 2X B OD C The ASI AVD10 is Designed for E F G FEATURES: H * Input Matching Network * * OmnigoldTM Metalization System L P M MAXIMUM RATINGS 11 A IC VCC O 400 W @ TC = 25 C TJ -65 OC to +250 OC TSTG -65 OC to +200 OC JC 0.3 OC/W CHARACTERISTICS SYMBOL inches / mm inches / mm .020 / 0.51 .030 / 0.76 MAXIMUM B .100 / 2.54 C .376 / 9.55 D .110 / 2.79 .130 / 3.30 E .395 / 10.03 .407 / 10.34 .396 / 10.06 F .193 / 4.90 G .450 / 11.43 .125 / 3.18 I .640 / 16.26 .660 / 16.76 J .890 / 22.61 .910 / 23.11 K .395 / 10.03 .415 / 10.54 L .004 / 0.10 .007 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P ORDER CODE: ASI10564 O NONETEST CONDITIONS IC = 10 mA BVCER IC = 15 mA BVEBO IE = 1 mA ICES VCE = 50 V hFE VCE = 5.0 V Cob VCB = 28 V C MINIMUM A TC = 25 C BVCBO PG N DIM H 55 V PDISS I J K VCC = 50 V RBE = 10 IC = 1.0 A MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 15 f = 1.0 MHz POUT = 150 W f = 1025 - 1150 MHz UNITS 12.5 mA 120 --- 80 pF 7.7 dB 40 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1