A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCBO IC = 10 mA 65 V
BVCER IC = 15 mA RBE = 10 Ω 65 V
BVEBO IE = 1 mA 3.5 V
ICES VCE = 50 V 12.5 mA
hFE VCE = 5.0 V IC = 1.0 A 15 120 ---
Cob VCB = 28 V f = 1.0 MHz
80 pF
PG
ηηC VCC = 50 V POUT = 150 W f = 1025 - 1150 MHz
7.7
40 dB
%
NPN SILICON RF POWER TRANSISTOR
AVD150
DESCRIPTION:
The ASI AVD10 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 11 A
VCC 55 V
PDISS
400 W @ TC = 25 OC
TJ -65 OC to +250 OC
TSTG -65 OC to +200 OC
θθJC 0.3 OC/W
PACKAGE STYLE .400 2NL FLG
ORDER CODE: ASI10564
MINIMUM
inches / mm
.100 / 2.54
.110 / 2.79
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
MAXIMUM
.396 / 10.06
.407 / 10.34
.130 / 3.30
inches / mm
.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.007 / 0.18
H
F
C E
N
ØD
M
G
4x .062 x 45°
P
L K
I
J
2X B .025 x 45°
A
N
M.118 / 3.00 .131 / 3.33
.020 / 0.51 .030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03 .415 / 10.54
.072 / 1.83.052 / 1.32
P .230 / 5.84
