2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N2906U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Low Leakage Current
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
@VCE=-30V, VEB=-3V.
·Excellent DC Current Gain Linearity.
·Low Saturation Voltage
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
·Low Collector Output Capacitance
: Cob=4.5pF(Max.) @VCB=5V.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-200 mA
Base Current IB-50 mA
Collector Power Dissipation PC200 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
* Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
2008. 9. 23 2/4Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA
Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-10μA, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10μA, IC=0 -5.0 - - V
DC Current Gain *
hFE(1) VCE=-1V, IC=-0.1mA 60 - -
hFE(2) VCE=-1V, IC=-1mA 80 - -
hFE(3) VCE=-1V, IC=-10mA 100 - 300
hFE(4) VCE=-1V, IC=-50mA 60 - -
hFE(5) VCE=-1V, IC=-100mA 30 - -
Collector-Emitter Saturation Voltage *
VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25
V
VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4
Base-Emitter Saturation Voltage *
VBE(sat)1 IC=-10mA, IB=-1mA -0.65 --0.85
V
VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95
Transition Frequency fTVCE=-20V, IC=-10mA, f=100MHz 250 - - MHz
Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF
Input Capacitance Cib VBE=-0.5V, IC=0, f=1MHz - - 10 pF
Input Impedance hie
VCE=-10V, IC=-1mA, f=1kHz
2.0 - 12 kΩ
Voltage Feedback Ratio hre 1.0 - 10 x10-4
Small-Signal Current Gain hfe 100 - 400
Collector Output Admittance hoe 3.0 - 60
Noise Figure NF VCE=-5V, IC=-0.1mA,
Rg=1kΩ, f=10Hz～15.7kHz - - 4.0 dB
Switching Time
Delay Time td- - 35
nS
Rise Time tr- - 35
Storage Time tstg - - 225
Fall Time tf- - 75
2N2906E
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
Ω
μ
2008. 9. 23 3/4
2N2906U
Revision No : 1
2008. 9. 23 4/4
2N2906U
Revision No : 1
