SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 18S$348 LOW VOLTAGE HIGH SPEED SWITCHING Unit in mm Low Forward Voltage : VF=0.56V(Typ.) Low Reverse Current : Ip=SyA(Max.) + Small Package : SC-59 2.9+0,.2 1.9 0.95 0.95 oe) wo MAXIMUM RATINGS (Ta=25C) nq ! 2 3s a | CHARACTERISTIC SYMBOL | RATING | UNIT ra 2 = 3 Maximum(Peak) Reverse Voltage VRM 85 V | Reverse Voltage VR 80 Vv 7 2 Maximum(Peak) Forward Current IFM 300 mA a Li 3 L Ne. Average Forward Current lo 100 mA io 2. ANODE 3. CATHODE Power Dissipation P 200 mW ; _. JEDEC - Junction Temperature Tj 125 C ETAJ SC-59 Storage Temperature Range Tstg -55~+125 C TOSHIBA 1-3G1B Operating Temperature Range Topr -40~100 C Weight : 0.013, ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.] MAX.] UNIT VF(1) If=lmA - | 0.26 - Forward Voltage VF(2) Ir=10mA - | 0,34 - Vv VF(3) Ip=LOOmA - 0.56 | 0.70 Reverse Current IR VR=80V - ~ 5 LA Total Capacitance CT Vr=0, f=IMNHze - 45 - pF Marking A K9 Y 1187 1$$348 Tp ~ Ve In Yr 100m 100 2 2 ~ 102 fy oc 10m a 5 le 3 x) ce Z 2 - 100n = Im a = oo = i = 5 2 m= 10n Oim In 0 0.2 04 0.6 08 1.0 1.2 1.4 0 10 20 30 40 50 60 76 80 90 FORWARD VOLTAGE Vp cv) REVERSE VOLTAGE VR cv) Cp VR am f=1Milz % Ta = 25C Ee io) Q zZ < BE 2 a a ca Oo 1 O41 0305 1 356 10 30 50 100 REVERSE VOLTAGE VR CV) 1188