SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage : VF=0.54V(Typ.) Low Reverse Current : IRp=5uA(Max.) Small Package : SC-61 1$$319 Unit in mm =s 3s 2, inn MAXIMUM RATINGS (Ta=25C) re 4 eS CHARACTERISTIC SYMBOL RATING UNIT S| 3 + oh Maximum(Peak) Reverse Voltage VRM 45 V 5 8 o Reverse Voltage VR 40 Vv a 1. CATHODE! o Maximum(Peak) Forward Current IFM 300* mA 2. CATHODE 2 2 1 Average Forward Current lo 100* mA 3. ANODE? fC 4. ANODE qi p23 Power Dissipation Pp 150* mi JEDEC Junction Temperature Tj 125 C BIAS sc-6l Storage Temperature Range Tstg -55~125 C TOSHIBA 1-33 1A * Unit Rating. Total Rating=Unit Rating x1.5 Veight : 0.013, ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX UNIT VF(1) IF=lmA - 0.28 ~ Forward Voltage VF(2) IF=10mA - 0.36 - V VF (3) IF=100mA - 0.54 | 0.60 Reverse Current IR VpR=40V - ~ 5 HA Total Capacitance Cr Vp=0, fF=LMHz ~ 18 25 pF Marking A 4 W177 U 1$$319 Ip VP In VR 300m 100 4 Ta=100T 304 100m 104 3a > 30m mo < <4 ~ ~~ La fay oe w ran 10m 300n : 5 ay cas] & g 100n 2 > Oo oO a 3m fy: 30n 2 a z 2 10n O za] Im z 3n In 0.3m 0.39 0.1m O1n 0 02 04 06 08 10 #12 16 0 10 20 30 40 50 FORWARD VOLTAGE Vp (V) REVERSE VOLTAGE Vp (+) Cy VR 100 50 30 10 TOTAL CAPACITANCE Cr (pF) 0 4 8 12 16 20 24 28 32 36 REVERSE VOLTAGE Vy () 1178