SIEMENS BCR 158 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=2.2kQ, Ro=47kQ) vPS05161 Type Marking |Ordering Code [Pin Configuration Package BCR 158 Wis Q62702-C2338 1=B l2 =E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VcEo 50 Vv Collector-base voltage Voso 50 Emitter-base voltage VEBO 5 Input on Voltage Vion) 10 DC collector current Ie 100 mA Total power dissipation, Tg = 102C Prot 200 mw Junction temperature 7; 150 c Storage temperature Tetg_ - 65... + 150 Thermal Resistance Junction ambient =? Ping < 350 KW Junction - soldering point Finss < 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6em? Cu Semiconductor Group 675 11.96 SIEMENS BCR 158 Electrical Characteristics at T7,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vipryceo Vv Io = 100 pA, Ip = 0 50 - - Collector-base breakdown voltage VipryCBO lo = 10 PA, fg =9 50 - - Collector cutoff current locBo nA Vop = 40 V, fe =0 - - 100 Emitter cutoff current lEBO pA Vep =5V, ic =0 - - 164 DC current gain fre - lo =5MA, Vog =5V 70 - - Collector-emitter saturation voltage 1) VoeEsat Vv Ig = 10 MA, Ig = 0.5 MA - - 0.3 Input off voltage Vicoff) lg = 100 HA, Vog = 5 V 0.4 - 0.8 Input on Voltage Vion) Ig =2 MA, Vop = 0.3 V 0.5 . 14 Input resistor Ry 1.5 2.2 2.9 kQ Resistor ratio Fi, /Re 0.042 0.047 0.052 - AC Characteristics Transition frequency fr , WMHz Io = 10 MA, Vog = 5 V, f= 100 MHz - 200 - Collector-base capacitance Cob pF Vog = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300s; D < 2% Semiconductor Group 676 11.96 SIEMENS BCR 158 oc Current Gain hee = fF (Ic) Collector-Emitter Saturation Voltage Vee = 5V (common emitter configuration) Votsat = Alc), hee = 20 103 192 Mee | 102 103 107 10 OL. 10 10 10 10 mA 9.0 0.1 0.2 0.3 v 05 e Ie Verna Input on Voltage Viton) = fic) input off voltage Viot) = A/c) Voge = 0.3V (common emitter configuration) Veg = 5V (common emitter configuration) 10? 102 10 0.1 02 03 04 05 06 07 08 V1.0 & Kron Vion Semiconductor Group 677 11.96 SIEMENS BCR 158 Total power dissipation P,.; = f(T"; Ts) * Package mounted on epoxy mw 150 NV Lo i 0 0 20 40 6 980 100 120 C 150 7,7, Permissible Pulse Load Anis = ftp) Mii nT Ft ro CA tt i A Semiconductor Group Permissible Pulse Load Protmax / Protoc = Kb) 678 11.96