Feb.1999
4.40.4 1.2 2.4 3.20.8 1.6 2.0 2.8 3.6 4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
j
= 125°C
T
j
= 25°C
10
0
23 5710
1
80
60
40
20
23 5710
2
44
100
120
140
160
180
200
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5.High sensitivity (IGT≤20mA) is also available. (IGT item 1)
Test conditions
Voltage
class
8
12
VDRM
(V)
400
600
Min.
—
10
—
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Symbol
R
L
R
L
Unit
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–8A/ms
3. Peak off-state voltage
VD=400V
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=25A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽4
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Max.
2.0
1.5
1.5
1.5
1.5
30✽5
30✽5
30✽5
—
1.4
—
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES