MITSUBISHI SEMICONDUCTOR TRIAC BCR16CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR16CS OUTLINE DRAWING 4 Dimensions in mm 1.3 VOLTAGE CLASS +0.3 0 -0 (1.5) 3.0 -0.5 +0.3 1.5 MAX 8.60.3 9.80.5 TYPE NAME 4.5 1.5 MAX 10.5 MAX 1 5 0.5 1 2 3 24 * IT (RMS) ...................................................................... 16A * VDRM ..............................................................400V/600V * IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) 5 1 1 2 3 3 4 2.60.4 4.5 0.8 Measurement point of case temperature T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220S APPLICATION Solid state relay, hybrid IC MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VDRM Repetitive peak off-state voltage 1 400 600 V VDSM Non-repetitive peak off-state voltage 1 500 720 V Conditions Parameter Symbol IT (RMS) RMS on-state current Commercial frequency, sine full wave 360 conduction, Tc =100C ITSM Surge on-state current I2t I2t for fusing PGM PG (AV) VGM Ratings Unit 16 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 170 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 121 A2s Peak gate power dissipation 5.0 W Average gate power dissipation 0.5 W Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Storage temperature Tstg -- Weight Typical value A -40 ~ +125 C -40 ~ +125 C 1.2 g 1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Limits Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125C, V DRM applied -- -- 2.0 mA VTM On-state voltage Tc=25C, ITM=25A, Instantaneous measurement -- -- 1.5 V -- -- 1.5 V -- -- 1.5 V 1.5 ! VFGT ! VRGT ! Gate trigger voltage 2 @ Tj=25C, VD =6V, RL=6, RG=330 VRGT # # -- -- IFGT ! ! -- -- 30 5 mA -- -- 30 5 mA -- -- 30 5 mA 0.2 -- -- V -- -- 1.4 C/ W 3 -- -- V/s IRGT ! Gate trigger current 2 @ Tj=25C, VD =6V, RL=6, RG=330 # IRGT # VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM R th (j-c) Thermal resistance Junction to case 4 (dv/dt) c Critical-rate of rise of off-state commutating voltage V 2. Measurement using the gate trigger characteristics measurement circuit. 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. 4. The contact thermal resistance R th (c-f) in case of greasing is 1.0C/W. 5. High sensitivity (I GT20mA) is also available. (IGT item 1) Voltage class VDRM (V) 8 400 (dv/dt) c Symbol Min. R -- SUPPLY VOLTAGE 1. Junction temperature Tj =125C L 10 V/s R 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit -- 2. Rate of decay of on-state commutating current (di/dt)c=-8A/ms 3. Peak off-state voltage VD =400V 600 L TIME MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE TIME (dv/dt)c VD 10 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 200 7 5 3 2 102 7 5 3 2 Tj = 125C Tj = 25C 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 103 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PG(AV) = 0.5W PGM = 5W 101 7 5 3 VGT = 1.5V 2 IGM = 2A 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) GATE VOLTAGE (V) 3 2 VGM = 10V 100 (%) GATE CHARACTERISTICS 103 7 5 4 3 2 102 7 5 4 3 2 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) -60 -40 -20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (C/W) 101 102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 40 160 35 140 30 360 CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (C) 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) ON-STATE POWER DISSIPATION (W) 102 7 5 4 3 2 IFGT I, IRGT I JUNCTION TEMPERATURE (C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IRGT III 101 -60 -40 -20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16CS MEDIUM POWER USE 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 8 10 12 14 16 18 20 60 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 104 7 5 3 2 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE DISTRIBUTION + 100 (%) JUNCTION TEMPERATURE (C) 103 7 5 3 2 - T2 , G TYPICAL EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 102 7 5 3 2 100 -40 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 101 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) LACHING CURRENT (mA) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE COPPER AND ALUMINUM 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 100 (%) AMBIENT TEMPERATURE (C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE T2 , G TYPICAL T2- , G- EXAMPLE + + 0 40 80 120 JUNCTION TEMPERATURE (C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16CS MEDIUM POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 140 I QUADRANT 120 III QUADRANT 100 80 #1 #2 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) 100 (%) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE COMMUTATION CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 103 7 5 4 3 2 (dv/dt)C t VD CURRENT WAVEFORM (di/dt)C IT t 101 I QUADRANT 7 5 3 MINIMUM 2 CHARACIII QUADRANT 100 TERISTICS 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH VOLTAGE WAVEFORM 3 TYPICAL 2 EXAMPLE 102 Tj = 125C 7 IT = 4A 5 = 500s 3 VD = 200V 2 f = 3Hz RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 TYPICAL EXAMPLE IFGT I IRGT I A 6V IRGT III V TEST PROCEDURE 1 102 7 5 4 3 2 A 6V RG V RG TEST PROCEDURE 2 6 A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) V RG TEST PROCEDURE 3 Feb.1999