GaAs Hyperabrupt Varactor Diodes CVG7864, CVG9800 Series Features @ Constant Gamma of 1.0 and 1.25 Highly Linear Frequency Tuning Constant Modulation Sensitivity Varactors M@ Available ina Wide Range of Packages Including Surface Mountable Outlines, and in Die Form Description Gallium arsenide hyperabrupt varactor diodes in this series feature a constant gamma of 1.0 and 1.25, which allows for a relatively linear frequency tuning for VCOs, modulators and tunable filters. The GaAs varactors in this series are grown by MBE (Molecular Beam Epitaxy) which allows monolayer control of the doping profile. This translates to superb wafer towafer uniformity. The series resistance is lower, and Q is higher, when compared to an equivalent Maximum Ratings Reverse Voltage, Vp: 22V Forward Current, Ir: 100 mA Power Dissipation at 25C: 250 mW -55 to 150C 65 to 200C Operating Temperature: Storage Temperature: Lower Series Resistance and Higher Q in Comparison to Equivalent Silicon Hyperabrupt > GS _ o> silicon hyperabrupt varactor. These diodes are suited for applications at X band frequencies and above, where wide change in frequency is desired. However in certain applications the gallium arsenide hyperabrupt varactor exhibits a higher surface noise, in comparison to an equivalent silicon varactor. For availability of other GaAs Hyperabrupt varactors, please consult the factory. 4-24 ALPHA INDUSTRIES, INC. + 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 * FAX: (617) 824-4579 _ GaAs Hyperabrupt Varactor Diodes CVG7864, CVG9800 Series Electrical Characteristics GaAs Hyperabrupt Varactor Chips (Gamma = 1.0) Reverse Breakdown Voltage, Var (10 WA): 18V Minimum Reverse Leakage Current, Ip (14.4): 100 nA Maximum Typical Linearity Range of Gamma = 1.0 + 10%: 2-12V Chip Outline: 150-808 Junction Capacitance Cy Ratio Q@AV, Cy @ 4V (pF) Cy Ratio (Cp = 0.15) 50 MHz! par number | win | aan | Sao | cao [on |e | min Outlines CVG786401 0.4 0.6 4.0 4.5 2.75 2.90 4000 290--001/304001 /325001/540-001 CVG7864-02 0.6 0.8 4.0 4.5 3.00 3.20 3500 290-001/304001 /325-001/540-001 CVG7864-03 0.8 1.0 4.0 45 3.10 3.40 3200 290-001/304001 /325-001/540-001 CVG7864-04 1.0 1.5 4.0 4.5 3.30 3.60 3000 290001/304001 /325-001/540-001 CVG786405 1.5 2.0 4.0 4.5 3.50 3.80 2500 290-001/304001/325001/540-001 CVG786406 2.0 2.5 4.0 4.5 3.60 3.95 2500 290-001/304001 /325001/540001 CVG786407 2.5 3.0 4.0 4.5 3.70 4.00 2200 290-001/304001 /325-001/540001 CVG786408 3.0 4.0 4.0 4.5 3.70 4.10 2200 290001/304001/325-001 /540-001 1. The measured values of figure of merit, Q. and series resistance, Rs, for a varactor diode are sensitive to the measurement method and set-up. The test set-up and test conditions used at Alpha are specified in this section. 2. For availability and delivery on other package styles, please consult the factory. GaAs Hyperabrupt Varactor Chips (Gamma = 1.25) Reverse Breakdown Voltage, Var (10 uA): 18V Minimum Reverse Leakage Current, |p (14.4V): 50 nA Maximum Typical Linearity Range of Gamma = 1.25 + 10%: 2-12V Chip Outline: 150-808 Junction Capacitance Cy Ratio Q @4vV, Cy @ 4V (pF) C, Ratio (Cp = 0.15) 50 MHz! par number | yan | wax | Sion | es | iek | ek | wm Outinee? CVG9800-01 0.3 0.4 5.7 6.4 2.9 3.0 4000 290001/304001/325-001/540001 CVG9800-02 0.4 0.6 5.7 6.4 3.4 3.5 3500 290-001 /304001/325001/540--001 CVG9800-03 0.6 0.8 5.7 6.4 3.8 4.0 3500 290-001/304001 /325--001 /540-001 CVG9800-04 0.8 1.0 5.7 6.4 4.4 4.4 3200 290--001/304001 /325001/540-001 CVG9800-05 1.0 15 5.7 6.4 4.4 4.8 3000 290-001/304001/325-001/540001 CVG9800-06 1.5 2.0 5.7 6.4 47 5.1 2500 290-001/304001/325-001/540-001 1. The measured values of figure of merit, Q, and sertes resistance, Rs, for a varactor diode are sensitive to the measurement method and setup. The test set-up and test conditions used at Alpha are specified in this section. 2. For availability and delivery on other package styles, please consult the factory. ALPHA INDUSTRIES, INC. * 20 SYLVAN ROAD, WOBURN, MA 01801 TEL: (617) 935-5150 * FAX: (617) 824-4579 4-25 GaAs Hyperabrupt Varactor Diodes CVG7864, CVG9800 Series Performance Data 100 F | F | | i 105 - --f- a E > s a E ee g F Ss ! 5 7-4 fF SRS REE & i & F ESSERE CvG7864~08 7864 Series @ 1 SSS CVG7864-07 E a E P~] Sie CVG7864-06 Oo E SSS CVG7864-05 i h~M CVG7864-04 4 r = CVG7864-03 0.2 0.1 CVG7864-02 1 10 CNG7864-01 100 0 T T T T T T T T T T TT T 0 2 4 6 8 10 12 14 Va + (Volts) Vapp (Volts) Capacitance vs. Voltage Sensitivity Factor (5 ) 10 _~ E SS F San a 4 | oS RES a = E Nast ~ VG9600.06 g E PSR VG9600-05 sg r MAINO CVG9800-04 S i. Soo cVve9s00-03 @ OTF ---| ~ evessooo2 1+ |- oO FE CVG9800-01 r Py yy 0.01 ty UW 1 10 100 Vr + (Volts) Capacitance vs. Voltage Package Outlines number. For example, CVG786401-290-001 GaAs hyperabrupt diodes are available as dice and in a variety of package outlines. Consult the factory for availability of packages not listed. The packages are designed to facilitate the handling of devices and circuit placement. However, the package may influence the devices performance. Please refer to Outline Drawings section for catalog package outlines, their characteristics, and their effect on electrical parameters of the diode. Ordering information To order an unpackaged die, simply identify the desired die by the part numbers as listed in the table of electrical specifications. To order a packaged diode, simply append the package part number to the die part represents the varactor diode formed by assembling CVG786401 die in a 290-001 package outline. Hyperabrupt Abrupt Varactor Diodes for High Reliability Applications Please refer to Reliability section for recommended quality assurance and inspection sequences for varactor diodes. This section also covers package outlines available for high reliability applications and simplified ordering instructions. Mathematical Model Please refer to Application Notes section for a mathematical model for a varactor diode. 4-26 ALPHA INDUSTRIES, INC. 20 SYLVAN ROAD, WOBUAN, MA 01801 TEL: (617) 935-5150 + FAX: (617) 824-4579