A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 45 V
BVCER IC = 10 mA RBE = 10 Ω 45 V
BVEBO IE = 1.0 mA 3.5 V
ICBO VCB = 28 V 2.5 mA
hFE VCE = 5.0 V IC = 500 mA 15 120 ---
Cob VCB = 28 V f = 1.0 MHz 10 pF
PG
η
ηη
ηC VCC = 28 V POUT = 10 W f = 1.0 GHz 10
60 11
64 dB
%
NPN SILICON RF POWER TRANSISTOR
MSC81058
DESCRIPTION:
The ASI MSC81058 is Designed fo r
General Purpose Class C Power
Amplif ier Applications up to 1.2 GHz.
FEATURES:
• PG = 10 dB min. at 10 W/ 1.0 G Hz
• Hermetic Microstrip Package
• Omnigold™ Metalization System
• Emitter Ballasted
MAXIMUM RATINGS
IC 1.0 A
VCC 35 V
PDISS 29 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 8.5 °C/W
PACKAGE STYLE .250 2L FLG
MINIMUM
inc he s / mm
.740 / 18.8 0
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inc he s / mm
.117 / 2.97
H.560 / 14.2 2 .570 / 14.4 8
DIM
K
L
I
J
.790 / 20.0 7
.225 / 5.72
.003 / 0.08
.810 / 20.5 7
.235 / 5.97
.007 / 0.18
L
G I
J
K
H F
BE
C
ØD
A
N
MP
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19 .185 / 4.70
.135 / 3.43.119 / 3.02
.125 / 3.18
