FEATURES
MECHANICAL DATA
* Case: Molded plastic
Ldeally suited for automatic insertion
Epitaxial planar die construction
Complementary NPN type available(BC817)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
BC807-16
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2007-3
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
DC current gain (VCE= -1V, IC= -100mA)
Collector cut-off current (VCB= -45V, IE=0)
Collector cut-off current (VCE= -40V, IB=0)
Emitter cut-off current (VEB= -4V, IC=0)
Collector-emitter saturation voltage (IC= -500mA, IB= -50mA)
Base-emitter saturation voltage (IC= -500mA, IB= -50mA)
Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ)
CHARACTERISTICS
MARKING
SYMBOL UNITS
-
-
-
-
-0.2
-0.1
mA
mA
mA
V
V
V
V
V
Collector-base breakdown voltage (IC= -10mA, IE=0)
Collector-emitter breakdown voltage (IC= -10mA, IB=0)
Emitter-base breakdown voltage (IE= -1mA, IC=0)
VCBO
VCEO
VEBO
IEBO
hFE(1)
ICBO
ICEO
VCE(sat)
VBE(sat)
fT
MAX
-50
-45
-5
-
100
100
MIN
0.055(1.40)
0.047(1.20)
- -0.1
-50
-45
-0.5
-55 -150
0.3
-5
-
-
-
-
-1.2
MHZ
-0.7
250
BASE
EMITTER
COLLECTOR
*
*
*
1
1
2
3
2
3
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Collector current-continuous
Collector dissipation
Junction and storage temperature
CHARACTERISTICS VALUESYMBOL UNITS
A
W
oC
V
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
TJ,Tstg
IC
PC
5A
NOTE: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.