QM30TX-HB - Mitsubishi Electric

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30TX-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

QM30TX-HB

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

APPLICATION

AC motor controllers, UPS, Inverters, DC motor controllers, NC equipment, Welders

68

8

20 20

62.5

0

–0.2

10.5

14 14

74±

0.25

86

(10) 18.5 18.5 18.5 18.5 (10)

80±

0.25

94

11–M4 4–φ5.4±

0.1

B1 B2 U

B3 B4 V

B5 B6 W

(N)–

(P)+

10

7

4

2

13 13

24.8

26

28.2MAX.

LABEL

B1

B2

B3

B4

U

B5

B6

V W

P(+)

N(–)

• ICCollector current .......................... 30A

• VCEX Collector-emitter voltage ........... 600V

• hFE DC current gain............................. 750

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

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Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM30TX-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Tj

Tstg

Viso

—

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current

(forward diode current)

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

Conditions

IC=1A, VEB=2V

VEB=2V

Emitter open

Collector open

DC

DC (forward diode current)

TC=25°C

DC

Peak value of one cycle of 60Hz (half wave)

Charged part to case, AC for 1 minute

Main terminal screw M4

Mounting screw M5

B(E) terminal screw M4

Typical value

Ratings

600

7

30

250

1.8

300

–40~+150

–40~+125

2500

0.98~1.47

10~15

1.47~1.96

15~20

0.98~1.47

10~15

520

Unit

V

A

W

A

°C

V

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Unit

mA

V

—

µs

°C/W

Limits

Min.

—

750

—

Symbol

ICEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance

(junction to case)

Contact thermal resistance

(case to fin)

Test conditions

VCE=600V, VEB=2V

VCB=600V, Emitter open

VEB=7V, Collector open

IC=30A, IB=40mA

IC=–30A (diode forward voltage)

IC=30A, VCE=2.5V

VCC=300V, IC=30A, IB1=60mA, –IB2=0.6A

Transistor part (per 1/6 module)

Diode part (per 1/6 module)

Conductive grease applied (per 1/6 module)

Typ.

—

Max.

1.0

60

2.5

3.0

1.8

—

2.0

8.0

3.0

0.5

2.0

0.2

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Feb.1999

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

COLLECTOR CURRENT I C (A)

DC CURRENT GAIN h FE

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

BASE CURRENT I B (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE V CE (sat) (V)

SATURATION VOLTAGE V CE (sat), V BE (sat) (V)SWITCHING TIME t on, t s, t f (µs)

COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)

BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)

MITSUBISHI TRANSISTOR MODULES

QM30TX-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

0

10

–3

10 –2

10 –1

10

4

10

3

10

2

10

1

10 0

10 1

10 2

10 3

10

0

10

–1

10

7

5

4

3

2

–2

10

7

5

4

3

2

2.2 2.6 3.0 3.4 3.8 4.2

VCE=2.5V

Tj=25°C

753275327532

75

32

75

3

2

7

5

32

VCE=2.5V

Tj=25°C

Tj=125°C

VCE=5.0V

1

10

7

5

4

3

2

0

10

7

5

4

3

2

–1

10 0

10 2 3 4 5 7 1

10 2 3 4 5 7 2

10

Tj=25°C

Tj=125°C

IB=40mA

VBE(sat)

VCE(sat)

100

80

60

40

20

0 0 1 2 3 4 5

Tj=25°C

I

B

=100mA

I

B

=20mA

I

B

=10mA

I

B

=0.5A

I

B

=200mA

0

753275327532

5

4

3

2

1IC=10A

Tj=25°C

Tj=125°C

IC=30A

IC=20A

1

10

7

5

4

3

2

0

10

7

5

4

3

2

–1

10 0

10 2 3 4 5 7 1

10 2 3 4 5 7 2

10

tf

ton

ts

Tj=25°C

Tj=125°C

IB2=–0.6A

VCC=300V

IB1=60mA

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Feb.1999

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

SWITCHING TIME t s, t f (µs)

COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)

FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.

COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

CHARACTERISTICS) (TYPICAL)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

TIME (s)

COLLECTOR CURRENT I C (A)

DERATING FACTOR (%) COLLECTOR REVERSE CURRENT –I C (A)

MITSUBISHI TRANSISTOR MODULES

QM30TX-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

Z th (j–c) (°C/ W)

0

10

0

10 1

10 2

10

–1

10

–2

10

–3

10

2

10

1

10

0

10

–1

10 0

10 1

10 2

10 3

10

80

20

0 0 100 800

60

40

300 400 500

70

50

30

10

Tj=125°C

IB2=–3.0A

IB2=–0.6A

200 600 700

2

10

1

10

7

5

4

3

2

0

10

7

5

4

3

2

0.4 0.8 1.2 1.6 2.0 2.4

Tj=25°C

Tj=125°C

1

10

7

5

4

3

2

0

10

7

5

4

3

2

–1

10 –1

10 2 3 4 5 7 0

10 2 3 4 5 7 1

10

VCC=300V

Tj=25°C

Tj=125°C

IC=30A

IB1=60mA

ts

tf

753275327532

75

32

7

5

3

2

7

5

32TC=25°C

DC

1m

S

100µ

S

500µ

S

753275327532

0.5

0.4

0.3

0.1

0

23457

0.2

7532 4

100

90

60

40

20

0 0 16020 40 60 80 100 120 140

80

10

70

50

30

SECOND

BREAKDOWN

AREA

COLLECTOR

DISSIPATION

NON-REPETITIVE

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Feb.1999

I rr (A), Q rr (µc)

SURGE COLLECTOR REVERSE CURRENT

–I CSM (A)

t rr (µs)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE)

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)

TIME (s)

Z th (j–c) (°C/ W)

MITSUBISHI TRANSISTOR MODULES

QM30TX-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

0

10

1

10

–3

10

–2

10

–1

10

0

10

2

10

1

10

0

10

2

10

1

10

0

10

0

10

1

10

2

10

3

10

–1

10

–1

10

2

10

1

10 75432

0

10 75432

0

100

200

300

400

500

753275327532

75

32

75

3

2

7

5

32

I

rr

t

rr

Q

rr

V

CC

=300V

I

B1

=60mA

T

j

=25°C

T

j

=125°C

I

B2

=–0.6A

753275

32

7532

2.0

1.6

1.2

0.8

0.4

0

23 57

32

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