Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34, BPW 34 S, BPW 34 SR BPW 34 BPW 34 S BPW 34 SR Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm * Kurze Schaltzeit (typ. 20 ns) * DIL-Plastikbauform mit hoher Packungsdichte * BPW 34 S/BPW 34 SR: geeignet fur Reflow Loten * Especially suitable for applications from 400 nm to 1100 nm * Short switching time (typ. 20 ns) * DIL plastic package with high packing density * BPW 34 S/BPW 34 SR: suitable for reflow soldering Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * IR-Fernsteuerungen * Industrieelektronik * Messen/Steuern/Regeln" * * * * Photointerrupters IR remote controls Industrial electronics For control and drive circuits Typ Type Bestellnummer Ordering Code Fotostrom, Ev=1000 lx, standard light A, VR = 5 V Photocurrent Ip (A) BPW 34 Q62702P0073 80 (50) BPW 34 S Q65110A1209 80 (50) BPW 34 SR Q65110A2701 80 (50) 2007-05-23 1 BPW 34, BPW 34 S, BPW 34 SR Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 80 (50) nA/Ix Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 400 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Lx B 2.65 x 2.65 mm x mm Lx W Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (30) nA Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity S 0.62 A/W Quantenausbeute, = 850 nm Quantum yield 0.90 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 365 ( 300) mV 2007-05-23 2 BPW 34, BPW 34 S, BPW 34 SR Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlussstrom, Ev = 1000 Ix Short-circuit current ISC 80 A Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr , tf 20 ns Durchlassspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm NEP 4.1 x 10- 14 Nachweisgrenze, VR = 10 V, = 850 nm Detection limit D* 6.6 x 1012 2007-05-23 3 W -----------Hz cm x Hz --------------------------W BPW 34, BPW 34 S, BPW 34 SR Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Relative Spectral Sensitivity Srel = f () OHF00078 100 P S rel % 80 OHF01066 10 3 A 10 4 mV VO 10 2 10 3 VO OHF00958 160 mW Ptot 140 120 100 60 10 1 Total Power Dissipation Ptot = f (TA) 10 2 P 40 80 60 10 0 10 1 -1 0 40 20 20 10 0 400 500 600 700 800 900 nm 1100 10 0 Dark Current 10 10 3 lx 10 4 EV 10 2 Capacitance C = f (VR), f = 1 MHz, E = 0 IR = f (VR), E = 0 OHF00080 4000 R 10 1 C pA 0 20 40 60 80 C 100 TA Dark Current IR = f (TA), VR = 10 V, E = 0 OHF00081 100 0 OHF00082 10 3 R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2007-05-23 0.8 0.6 0.4 0 20 40 60 80 100 4 120 10 -1 0 20 40 60 80 C 100 TA BPW 34, BPW 34 S, BPW 34 SR Mazeichnung Package Outlines BPW 34 5.4 (0.213) 4.3 (0.169) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 3.7 (0.146) 3.5 (0.138) 3.0 (0.118) 1.2 (0.047) 0.7 (0.028) 0.8 (0.031) 0.6 (0.024) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0 ... 5 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 BPW 34 S 0.3 (0.012) 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0...5 0.2 (0.008) 0.1 (0.004) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) 0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Mae in mm (inch) / Dimensions in mm (inch). 2007-05-23 5 BPW 34, BPW 34 S, BPW 34 SR BPW 34 SR 0...5 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0.3 (0.012) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 6.7 (0.264) 6.2 (0.244) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) 0.2 (0.008) 0.9 (0.035) 0.7 (0.028) 4.5 (0.177) 4.3 (0.169) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 Mae in mm (inch) / Dimensions in mm (inch). 2007-05-23 6 BPW 34, BPW 34 S, BPW 34 SR Lotbedingungen Soldering Conditions BPW 34 S BPW 34 SR Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Wellenloten (TTW) TTW Soldering BPW 34 (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 t 2007-05-23 7 s 250 BPW 34, BPW 34 S, BPW 34 SR Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-05-23 8