©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
BC327/328
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC327
: BC328 -50
-30 V
V
VCEO Collector-Emitter Voltage
: BC327
: BC328 -45
-25 V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -800 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collect or-Em itter Break down Voltage
: BC327
: BC328
IC= -10mA, IB=0 -45
-25 V
V
BVCES Collect or-Em itter Break down Voltage
: BC327
: BC328
IC= -0.1mA, VBE=0 -50
-30 V
V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICES Collector Cut-off Current
: BC327
: BC328 VCE= -45V, VBE=0
VCE= -25V, VBE=0 -2
-2 -100
-100 nA
nA
hFE1
hFE2
DC Current Gain
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA 100
40 630
VCE (sat) Collector-Emitter Satu ration Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 1 00 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
1. Collector 2. Base 3. Emitter
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
BC327/328
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product
-1 -2 -3 -4 -5
-0
-100
-200
-300
-400
-500
PT = 600mW
I
B
= - 3.0mA
I
B
= - 2.0mA
I
B
= - 3.5mA
IB = - 1.0mA
I
B
= - 1.5mA
IB = - 0.5mA
I
B
= - 4.0mA
I
B
= - 2.5mA
I
B
= - 4.5mA
I
B
= - 5.0mA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10 -20 -30 -40 -50
-4
-8
-12
-16
-20
PT = 600mW
IB = - 80
µ
A
IB = - 70
µ
A
IB = - 60
µ
A
IB = - 50
µ
A
IB = - 40
µ
A
I
B
= - 30µA
IB = - 20µA
I
B
= - 10
µ
A
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 PULSE
- 1.0V
VCE = - 2.0V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
PULSE
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-0.1
-1
-10
-100
-1000
VCE = -1V
PULSE
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
10
100
1000
VCE = -5.0V
fT[MHz], GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
Package Dimensions
BC327/328
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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changes at any time without notice in order to improve
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