MOTOROLA SC (XSTRS/R F) MOTOROLA @ SEMICONDUCTOR xxx TECHNICAL DATA 73h 2N3959 2N3960 The RF Line NPN SILICON HIGH-FREQUENCY TRANSISTORS . . designed for high-speed current-mode logic switching applications. @ High Current-GainBandwidth Product ft = 1800 MHz (Typ) @ Ic = 10 mAdc @ Low Input and Output Capacitance Cit and Cob = 2.5 pF (Max) @ Excellent Current-Mode Performance tr = 1.7 ns (Typ) @ Ic = 30 mAdc @ Low Collector-Base Time Constant fh Cc = 25 ps (Max) @ Ic = 10 mAdc 2N3959 1.8 GHz 10 mAde HIGH FREQUENCY TRANSISTORS NPN SILICON Currant-Mode logic operation, because of the absence of storage time, offers improved high-speed performance for digttal applications In addition, the low impedance drive circuit offers improved delay, rise, and fall times. The basic characteristics of importance in current-mode logic applicatians (Cip and Cop}, and Base Spreading Resistance {rp). tionally high speed in current-mode logic circuits are Currant-GainBandwidth Product (fy), Input and Output Capacitance The 2N3959 and 2N3960 offer a combination of extremely high fy values, low capacitances, and low base spreading resistance which results in excep- *MAXIMUM RATINGS Rating Symbol Value Unit Colfector-Emitter Voltage VcEO 12 Vde Collector-Base Voltage Voce 20 Vde Emutter-Base Voltage VEB 45 Vde Total Power Dissipation @ Ta = 25C Pp 200 mw Derate above 25C 2.3 m/e Total Power Dissipation @ Tg = 25C Py 750 mw Derate above 25C 43 mw/c Operating and Storage Junction Ty.Tstg | -65 to +200 eC Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unt Thermat Resistance, Junction to Ambient Raa 0.436 Scimw Thermal Resistance, Junction to Case Reuc 0.233 Cimw "Indicates JEOEC Registered Data eB T it yr rT } Pu lee F < SEATING PLANE: STYLE 1 PIN 1 EMITTER 2 GASE 3 COLLECTOR CASE 22-03 TO-206AA (FO-18) MOTOROLA RF DEVICE DATA 2-19 4BE D MM 6367254 OO94041 7? BMOTL MOTOROLA SC (XSTRS/R F) WBE D MM 6367254 OO54042 9 MmMOTEL 2N3959, 2N3960 1-31-19 ELECTRICAL CHARACTERISTICS (Tq = 25C unless otherwise noted.) [- Characteristic LFig.no. [ symbo: | min [ Typ | max | une | *OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage - VIBRICEO 12 - - Vde {ig = 10 mAde, Ig = 0) Cailector-Base Breakdown Voltage - ViBRICBO 20 - - Vde (tg = 10 uAde, te = 0} Emitter-Base Breakdown Voltage - ViBRiEBO 45 - - Vde {le = 10 wAde, t = 0) Collector Reverse Current - \cEX BAdC (Veg = 10 Vie, Veg = 2.0 Vac) - - 0.005 (Voce = 10 Vie, Veg = 2.0 Vde, Ta = 150C) - - 5.0 Bese Cutoff Current - let - - 0.008 uAdc (VE = 10 Vie, Veg = 2.0 Vde) Collector Forward Current - Ioex - - 1.0 zAdc (Vee * 5.0 Vide, Vag = 0.4 Vac ON CHARACTERISTICS DC Current Gain 1 hee - (ig * 1.0 mAde, Voge = 1.0 Vde) 25 - - {ic = 10 mAde, Vcg = 1.0 Vde) 40 - 400 (Ie = 30 mAde, Vee = 1.0 Vdel 25 - - Collector-Emitter Saturation Voltage - VcE (sat) Vde tig = 1.0 mAde, Ip = 0.1 mAdc) - - 0.2 (tg = 30 mAde, Ig = 3.0 mAdc} - - 0.3 Base-Emitter on Voltage - VBE(on) Vide {Ig = 1 OmAdc, Veg = 1.0 Vde} - - a8 {tg = 30 mAdc, Vcg = 1.0 Vde} - - 10 DYNAMIC CHARACTERISTICS Current-Gain~Bandwidth Product 2 ft MHz (ig = .0 mAdc, Voce = 4.0 Vde, f = 100 MHz} 2N3959 1000 ~ - 2N3960 1300 - - {lg = 10 mAde, VcE = 10 Vde, f = 100 MHz) 2N3959 1300 - - 2N3960 1600 ~ - (tg * 30 mAdc, Vg = 4.0 Vie, f = 100 MHz) 2N3959 1000 - - 2N3960 1200 - - Output Capacitance 4 Cob - 2.0 25 pF (Vog = 4.0 Vie, Ie = 0, f = 1.0 MHz} Input Capacitance 4 Cip - 15 25 pF (Veg = 0.5 Vde, Io = 0, f = 100 MHz} Collector-Base Time Constant 3 ro Ce ps (lg = 5.0 mAde, Voce = 4.0 Vide) 2N3959 - - 30 2N3960 - - 50 {lg = 10 mAdc, VcE = 10 Vide) 2N3959 - - 25 2N3960 - - 40 lig = 30 mAde, Vice = 4.0 Vide} 2N3969 ~ ~ 30 2N3960 - ~ 50 SWITCHING CHARACTERISTICS (Figure 7) Turn-On Delay Time _ dion) ns (te = 10 MAde, Voyr = 1.0 Vde) - 2.4 - {le = 30 mMAde, Voyr = 1.0 Vide? - 2.0 - Rise Time - tr ns (ig = 10 mAdc, Vout = 1.0 Vde) Both Devices - 3.0 - (ig = 30 mAde, Vout = 1.0 Vde) 2N3959 - 2.2 - 2N3960 ~ 17 - Turn-Off Delay Time - tdlott} ns (lg = 10 MAde, Vout = 1.0 Vde} - 1.6 - (ig = 30 mAde, Voys = 1.0 Vide) - 1.6 - Fali Time - tf ns (lg = 10 MAdc, Vogt * 1.0 Vide} Both Devices - 3.3 - (tg = 30 mAde, Voy: * 1.0 Vide} 2N3959 ~ 2.3 - 2N3960 = 13 - Indicates JEDEC Registered Data ee nnan en MOTOROLA RF DEVICE DATA 2-20 2N3959, 2N3960 MOTOROLA SC (XSTRS/R F) ULE D @@ 6367254 0094043 O MBNOTE FIGURE 2 ~ TYPICAL CURRENT-GAIN BANDWIDTH FIGURE 1 ~ TYPICAL DC CURRENT GAIN PRODUCT T-31-19 26 2 hee, CURRENT GAIN & f7, CURRENT GAIN-BANDWIDTH PRODUCT (GHz) 0.5 10 20 3.0 60 7.0 10 2 6 0 1.0 20 19 2 30 ic, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) FIGURE 3 TYPICAL COLLECTOR-BASE TIME CONSTANT FIGURE 4 TYPICAL JUNCTION CAPACITANCE a s = Ta = 2500 Zz Voe*t0V & z 9 eo -_ Z g - wi z 2 < a Ee < 3 a =< 5 s Aad 4 a 3 s 3 2 05 Q 40006860012 16 20 24 0.1 02 a3 os 1a 30 .0 0 i, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) a MOTOROLA RF DEVICE DATA 2-21 2N3959, 2N3960 MOTOROLA SC (XSTRS/R F) 4BE D MM 6367254 OO94044 2 MEMOTL TURN-ON AND TURN-OFF TIMES T 31 19 FIGURE 5 Vout 1.0 Vde FIGURE 6 ~ Vout = 2.0 Vde ~ 50 Vour=2 0 Ty= 250 Rg = Ry 0 Vin * Vout z = 10 z 5.0 td 36 ton) 'dloff) 20 10 19 20 30 640 $0 7.0 10 20 30 1.0 20 30 4050 70 10 20 30 Ic, COLLECTOR CURRENT (mA) ic, COLLECTOR CURRENT (mA} FIGURE 7 SWITCHING TIMES TEST CIRCUIT OVee (45.3 Vv) v | oct RLS O = input Pulse Vout 4 tee te K1 Ons To Scope Pulse Width = 10 ys Channel 1 Ground | Ta Scope Planes Channel 2 GC, 25 pF T = Vee (-25.3 Vv) This test set up is designed to simulate 8 cascade of identical stages ..The source Vin = Vour 2 volts, Vag = +1 OV reastance (Ag) equals the load resistance {AL). Values used in the test are shown Ne tml | Re (kay Ay (2) | AK 1) in the table. 10 240 20k 2.0k 30 a2 680 680 10 24 200 1380 For Vin * Vour = 1 V. Vag = +05 V, AL & Ri values appropriately reduced, 30 O38 68 36 MOTOROLA RF DEVICE DATA 2-22