SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995
FEATURES
* Guaranteed hFE Specified up to 2A
* Fast Switching
PARTMARKING DETAIL - DEVICE TYPE IN FULL
COMPLEMENTARY TYPES - FZT604 - FZT704
FZT605 - FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT604 FZT605 UNIT
Collector-Base Voltage VCBO 120 140 V
Collector-Emitter Voltage VCEO 100 120 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 4A
Continuous Collector Current IC1.5 A
Power Dissipation Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
FZT604
FZT605
V(BR)CBO 120
140
V
V
IC=100µA
IC=100µA
Collector-Emitter
Breakdown Voltage
FZT604
FZT605
V(BR)CEO 100
120
VI
C=10mA*
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µA
Collector Cut-Off
Current
FZT604 ICBO 0.01
10 µA
µA
VCB
=100V
VCB
=100V,T
amb
=100°C
FZT605 0.01
10 µA
µA
VCB
=120V
VCB
=120V,T
amb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=8V
Collector-Emitter
Cut-Off Current
FZT604 ICES 10 µAVCES
=100V
FZT605 10 µAVCES
=120V
Collector-EmitterSaturation
Voltage
VCE(sat) 1.0,
1.5
V
V
IC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
Base-Emitter Saturation Voltage VBE(sat) 1.8 V IC=1A, IB=1mA*
Base-Emitter Turn-On Voltage VBE(on) 1.7 V IC=1A, VCE
=5V*
Static Forward
Current Transfer Ratio
hFE 2K
5K
2K
0.5K
100K
IC=50mA, VCE
=5V
IC=500mA, VCE
=5V*
IC=1A, VCE
=5V*
IC=2A, VCE
=5V*
C
C
E
B
FZT604
FZT605
3 - 202
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS
Transition Frequency fT150 MHz IC=100mA,VCE
=10V
f=20MHz
Input capacitance Cibo 90 Typical pF VEB
=500mV, f=1MHz
Output Capacitance Cobo 15 Typical pF VCB
=10V, f=1MHz
Switching Times ton 0.5 Typical pF IC=500mA, VCE
=10V
IB1 = IB2 = 0.5mA
toff 1.6 Typical pF
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices.
FZT604
FZT605
FZT604
FZT605
3 - 203 3 - 204
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
0
0.4
0.01 0.1 101
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
C
- Collector Current (Amps)
V - (Volts)
0.6
0.01 100.1 1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
/I
B
=100
I
C
/I
B
=100
I
C
- Collector Current (Amps)
hFE v IC
h- Gain normalised to 1 Amp
0.001 0.01 100.1 1
0.5
1.0
1.5
2.0
2.5
V
CE
=5V
I
C
- Collector Current (Amps)
V - (Volts)
0.6
1.0
1.4
1.8
0.01 0.1 110
V
CE
=5V
-55°C
+25°C
+100°C
0.4
0.8
1.2
1.6
2.2
0.2
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
0.4
-55°C
+25°C
+100°C
2.2
2.0
VBE(sat) v IC VBE(on) v IC
I
C
-Collector Current (A)
FZT604 Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1
0.1
10 1001
0.01
1000
10
1s
DC
100ms
10ms
100
µ
s
1ms
I
C
-Collector Current (A)
FZT605 Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1000
1
0.1
10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0.01
10
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS
Transition Frequency fT150 MHz IC=100mA,VCE
=10V
f=20MHz
Input capacitance Cibo 90 Typical pF VEB
=500mV, f=1MHz
Output Capacitance Cobo 15 Typical pF VCB
=10V, f=1MHz
Switching Times ton 0.5 Typical pF IC=500mA, VCE
=10V
IB1 = IB2 = 0.5mA
toff 1.6 Typical pF
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices.
FZT604
FZT605
FZT604
FZT605
3 - 203 3 - 204
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
0
0.4
0.01 0.1 101
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
C
- Collector Current (Amps)
V - (Volts)
0.6
0.01 100.1 1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
/I
B
=100
I
C
/I
B
=100
I
C
- Collector Current (Amps)
hFE v IC
h- Gain normalised to 1 Amp
0.001 0.01 100.1 1
0.5
1.0
1.5
2.0
2.5
V
CE
=5V
I
C
- Collector Current (Amps)
V - (Volts)
0.6
1.0
1.4
1.8
0.01 0.1 110
V
CE
=5V
-55°C
+25°C
+100°C
0.4
0.8
1.2
1.6
2.2
0.2
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
0.4
-55°C
+25°C
+100°C
2.2
2.0
VBE(sat) v IC VBE(on) v IC
I
C
-Collector Current (A)
FZT604 Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1
0.1
10 1001
0.01
1000
10
1s
DC
100ms
10ms
100
µ
s
1ms
I
C
-Collector Current (A)
FZT605 Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1000
1
0.1
10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0.01
10
