Rev.3.00 Mar 22, 2005 page 1 of 4
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0564-0300
(Previous: ADE-208-180B)
Rev.3.00
Mar 23, 2005
Features
• Low capacitance. (C = 3.0 pF max)
• Short reverse recovery time. (trr = 3.5 ns max)
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
Package Name
Package Code
(Previous Code)
1SS119 Light Blue MHD GRZZ0002ZC-A
(MHD)
Pin Arrangement
12
Cathode band
1. Cathode
2. Anode
1SS119
Rev.3.00 Mar 23, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM 35 V
Reverse voltage VR 30 V
Average rectified current IO 150 mA
Peak forward current IFM 450 mA
Non-Repetitive peak forward surge current IFSM * 1 A
Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg −65 to +175 °C
Note: Within 1s forward surge current.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF — — 0.8 V IF = 10 mA
Reverse current IR — — 0.1 µA VR = 30 V
Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz
Reverse recovery time trr * — — 3.5 ns IF = 10 mA, VR = 6 V, RL = 50 Ω
Note: Reverse recovery time test circuit
0.1 µF
DC
Supply
Pulse
Generator
Ro = 50 ΩRin = 50 Ω
Sampling
Oscilloscope
3 kΩ
Trigger
1SS119
Rev.3.00 Mar 23, 2005 page 3 of 4
Main Characteristic
0 0.2 0.80.6 1.00.4 1.2
Ta = -25°C
Ta = 25
°
C
Ta = 125°C
Ta = 75°C
010 304020 50
Ta = 75°C
Ta = 125°C
Ta = 25°C
1.0 10
10
1.0
100
f = 1MHz
10–4
10–3
10–2
10–1
0.1
10–5
10–6
10–4
10–7
10–8
10–9
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Reverse current IR (A)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Forward current IF (A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Capacitance C (pF)
1SS119
Rev.3.00 Mar 23, 2005 page 4 of 4
Package Dimensions
LEL
Min Nom Max
φb-0.4
φD-2.0
E--2.4
L26.0 - -
-
-
φbφD
Dimension in Millimeters
Reference
Symbol
0.084g
MASS[Typ.]
MHD / MHDVGRZZ0002ZC-A
RENESAS CodeJEITA Package Code Previous Code
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0