Rev.2.00 Jul 07, 2006 page 1 of 6
FK10SM-10
High-Speed Switching Use
Nch Power MOS FET REJ03G1380-0200
(Previous: MEJ02G0228-0101)
Rev.2.00
Jul 07, 2006
Features
• VDSS : 500 V
• rDS (ON) (max) : 1.13 Ω
• ID : 10 A
• Integrated Fast Recovery Diode (MAX.) : 150 ns
Outline
RENESAS Package code: PRSS0004ZB-A
(Package name:
TO-3P)
1
12
1. Gate
2. Drain
3. Source
4. Drain
3
3
4
2, 4
Applications
Servo motor drive, Robot, UPS, Lamp ballast, etc.
Maximum Ratings
(Tc = 25°C)
Parameter Symbol Ratings Unit Conditions
Drain-source voltage VDSS 500 V VGS = 0 V
Gate-source voltage VGSS ±30 V VDS = 0 V
Drain current ID 10 A
Drain current (Pulsed) IDM 30 A
Source current IS 10 A
Source current (Pulsed) ISM 30 A
Maximum power dissipation PD 125 W
Channel temperature Tch – 55 to +150 °C
Storage temperature Tstg – 55 to +150 °C
Mass — 4.8 g Typical value
FK10SM-10
Rev.2.00 Jul 07, 2006 page 2 of 6
Electrical Characteristics
(Tch = 25°C)
Parameter Symbol Min. Typ. Max. Unit Test conditions
Drain-source breakdown voltage V(BR) DSS 500 — — V ID = 1 mA, VGS = 0 V
Gate-source breakdown voltage V(BR) GSS ±30 — — V IG = ±100 µA, VDS = 0 V
Gate-source leakage current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 V
Drain-source leakage current IDSS — — 1 mA VDS = 500 V, VGS = 0 V
Gate-source threshold voltage VGS (th) 2 3 4 V ID = 1 mA, VDS = 10 V
Drain-source on-state resistance rDS (ON) — 0.88 1.13 Ω I
D = 5 A, VGS = 10 V
Drain-source on-state voltage VDS (ON) — 4.40 5.65 V ID = 5 A, VGS = 10 V
Forward transfer admittance | yfs | 3.3 5.5 — S ID = 5 A, VDS = 10 V
Input capacitance Ciss — 1100 — pF
Output capacitance Coss — 130 — pF
Reverse transfer capacitance Crss — 20 — pF
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Turn-on delay time td (on) — 20 — ns
Rise time tr — 30 — ns
Turn-off delay time td (off) — 95 — ns
Fall time tf — 35 — ns
VDD = 200 V, ID = 5A,
VGS = 10 V,
RGEN = RGS = 50 Ω
Source-drain voltage VSD — 1.5 2.0 V IS = 5 A, VGS = 0 V
Thermal resistance Rth (ch-c) — — 1.00 °C/W Channel to case
Reverse recovery time trr — — 150 ns IS = 10 A, dis/dt = –100 A/µs
Performance Curves
Power Dissipation Derating Curve
Case Temperature Tc (°C)
Power Dissipation PD (W)
Maximum Safe Operating Area
Drain-Source Voltage VDS (V)
Drain Current ID (A)
200
160
120
80
40
0200150100500
5
3
2
10
1
7
5
3
2
10
0
7
5
7
5
3
2
10
–1
23 5710
1
10
0
23 5710
2
23 5710
3
tw=10µs
100µs
DC
Tc = 25°C
Single Pulse
FK10SM-10
Rev.2.00 Jul 07, 2006 page 3 of 6
Output Characteristics (Typical)
Drain Current I
D
(A)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
Drain Current I
D
(A)
Drain-Source Voltage V
DS
(V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage V
GS
(V)
Drain-Source On-State Voltage V
DS(ON)
(V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current I
D
(A)
Drain-Source On-State Resistance r
DS(ON)
(Ω)
Transfer Characteristics (Typical)
Gate-Source Voltage V
GS
(V)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current I
D
(A)
Forward Transfer Admittance | yfs | (S)
10
1
7
5
3
2
10
–1
10
–1
23 5710
0
10
0
7
5
3
2
23 5710
1
Tc = 25°C
125°C
75°C
20
16
12
8
4
00 4 8 12 16 20
10
8
6
4
2
0048121620
PD = 125W
V
GS
= 20V 10V 6V
4V
5V
40
32
24
16
8
00 4 8 12 16 20
I
D
= 20A
10A
5A
02310
–1
5710
0
23 5710
1
23 5710
2
2.0
1.6
1.2
0.8
0.4
V
GS
= 10V
20V
20
16
12
8
4
00 1020304050
6V
5V
V
GS
= 20V
10V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
VDS = 50V
Pulse Test
Tc = 25°C
Pulse Test
VDS = 10V
Pulse Test
PD =
125W
FK10SM-10
Rev.2.00 Jul 07, 2006 page 4 of 6
Switching Characteristics (Typical)
Drain-Source Voltage V
DS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current I
D
(A)
Capacitance C (pF)
Switching Time (ns)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Gate-Source Voltage V
GS
(V)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage V
SD
(V)
Source Current I
S
(A)
Channel Temperature Tch (°C)
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage V
GS(th)
(V)
On-State Resistance vs.
Channel Temperature (Typical)
Channel Temperature Tch (°C)
Drain-Source On-State Resistance r
DS(ON)
(t°C)
Drain-Source On-State Resistance r
DS(ON)
(25°C)
5.0
4.0
3.0
2.0
1.0
0–50 0 50 100 150
20
16
12
8
4
00 20406080100
VDS = 100V
400V
200V
23 5710
0
10
3
7
5
3
2
10
2
7
5
23 5710
1
10
–1
10
1
3
2
tf
td(off)
tr
td(on)
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
2
23 5710
1
23 5710
0
23
7
5
Ciss
Coss
Crss
40
32
24
16
8
00 0.8 1.6 2.4 3.2 4.0
Tc = 125°C
25°C
75°C
10
0
7
5
3
2
10
Ð1
0
10
1
7
5
3
2
50 100 150 200 250
Tch = 25°C
I
D
= 10 A
Tch = 25°C
f = 1MHz
V
GS
= 0V
V
GS
= 0V
Pulse Test
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
V
DS
= 10V
I
D
= 1mA
V
GS
= 10V
I
D
= 5A
Pulse Test
FK10SM-10
Rev.2.00 Jul 07, 2006 page 5 of 6
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Drain-Source Breakdown Voltage V
(BR)DSS
(t°C)
Drain-Source Breakdown Voltage V
(BR)DSS
(25°C)
Diode Reverse vs.
Source Currnet Characteristic (Typical)
Source Current I
S
(A)
Reverce Recovery Time trr (ns)
Reverce Recovery Current Irr (ns)
Reverce Recovery Time trr (ns)
Reverce Recovery Current Irr (ns)
Source Current dis/dt (–A/µs)
Diode Reverse vs.
Source Currnet d
is
/dt Characteristic (Typical) Transient Thermal Impedance Characteristics
Pulse Width tw (s)
Transient Thermal Impedance Zth(ch-c) (°C/W)
Switching Time Measurement Circuit Switching Waveform
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Vin Monitor
D.U.T.
R
L
V
DD
Vout
Monitor
R
GEN
R
GS
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
10
1
10
2
7
5
3
2
10
1
7
5
3
2
10
0
I
rr
t
rr
1.4
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
P
DM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
5
3
2
10
1
23 5710
2
10
2
7
5
3
2
23 5710
3
10
1
3
2
10
1
7
5
5
7
5
7
5
3
2
10
0
I
rr
t
rr
VGS = 0V
ID = 1mA
d
is/
d
t
= –100A/µs
V
GS
= 0V
V
DD
= 250V
T
ch
= 25°C
T
ch
= 150°C
T
ch
= 25°C
T
ch
= 150°C
I
S
= 10A
V
GS
= 0V
V
DD
= 250V
FK10SM-10
Rev.2.00 Jul 07, 2006 page 6 of 6
Package Dimensions
SC-65 4.8g
MASS[Typ.]
PRSS0004ZB-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
15.9Max 4.5
1.5
4.4
2.80.6
5.45
4
5.45
1.0
2
φ3.2
20.019.5Min
2
4
5.0
Package Name
TO-3P*
Ordering Information
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Static electricity prevention b ag 200 Type name FK10SM-10
Note: Please confirm the specification ab out the shipping in detail.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
