TLN201(F) TOSHIBA Infrared LED GaAAs Infrared Emitter TLN201(F) Lead Free Product Unit: mm Opto-Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission * To-18 metal package. * High radiant power: Po = 5mW(typ.) * High radiant intensity: IE = 35mW / sr(typ.) * Excellent radiant-intensity linearity. Modulation by pulse operation and high frequency is possible. * Highly reliable due to hermetic seal * Same external shape as TPS708(F) photodiode Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit IF 100 mA IF / C -1 mA / C IFP 1 A Reverse voltage VR 5 V Operating temperature range Topr -40~125 C Storage temperature range Tstg -55~150 C Forward current Forward current derating (Ta > 25C) Pulse forward current (Note) (Note): Pulse width 100s,repetitive frequency = 100Hz TOSHIBA Weight: 0.33 g (typ.) Pin Connection 1 2 1. 2. Markings 4-5Q2 Cathode Anode (case) Product No.(TL omitted) Monthly lot number N201 Letter colorred Month of manufacture (january to december denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture) 1 2004-02-06 TLN201(F) Optical And Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 50mA 1.5 1.9 V Pulse forward voltage VFP IFP = 1A 5.0 V Reverse current IR VR = 5V 10 A Radiant intensity IE IF = 50mA 20 35 mW / sr Radiant power PO IF = 50mA 5 mW Capacitance CT VR = 0, f = 1MHz 17 pF Peak emission wavelength P IF = 50mA 880 nm Spectral line half width IF = 50mA 80 nm 1 2 IF = 50mA 7 Half value angle Precautions Please be careful of the followings. 1. Soldering temperature : 260C max Soldering time : 5s max (Soldering must be performed 1.5m from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2004-02-06 TLN201(F) IFP - VFP 1000 100 500 (typ.) 300 (mA) 80 IFP 60 40 Pulse forward current Allowable forward current IF (mA) IF - Ta 120 20 0 0 20 60 40 100 80 Ambient temperature Ta 120 140 (C) 100 50 30 10 5 3 IF - VF (typ.) 1 0 100 Pulse width 100s Repetitive Frequency = 100Hz Ta = 25C 1 (mA) 5 6 7 VFP (V) Ta = 100C 75 IF Forward current 4 Pulse forward voltage 50 30 3 2 50 25 0 -25 10 5 3 1 1.1 IE - IF 1.2 1.3 1.4 1.5 Forward voltage 1.6 1.7 3000 1.8 VF (V) 1000 (typ.) Pulse width 100s Repetitive Frequency = 100Hz Ta = 25C Wavelength Characteristic (mW / sr) 500 (typ.) 1.0 Radiant intensity IE IF = 50mA Ta = 25C Relative intensity 0.8 0.6 300 Pulse 100 50 30 10 0.4 5 0.2 0 760 800 840 880 Wavelength 920 960 1000 (nm) 3 D 1 1 3 10 30 Forward current IF 3 100 300 1000 (mA) 2004-02-06 TLN201(F) Radiation Pattern Relative IE - Ta (typ.) (typ.) 10 5 20 10 0 10 Relative radiant intensity (Ta = 25C) 20 30 30 40 40 50 50 60 60 70 70 3 1 0.5 0.3 80 80 90 0 0.2 0.4 0.6 0.8 90 1.0 0.1 -40 -20 Relative intensity 0 20 40 60 Ambient temperature 80 100 Ta (C) 120 140 Coupling Characteristic With TPS601(F) 100 Ta = 25C IFP - PW 50 3000 30 Ta = 25C Allowable pulse forward current IFP (mA) Collector current IC (mA) IE = 25.5mW / sr 10 5 3 TPS601A(F) using sample IL = 226A at VCE = 3V 1 E = 0.1mW / cm2 0.5 0.3 1000 500 f = 100Hz 300 100 10kHz 2kHz 5kHz 50 500Hz 1kHz 200Hz 30 d 0.1 1 3 5 10 Distance 30 50 d 100 10 3 300 500 1000 10 30 100 Pulse width (mm) 4 300 PW 1m 3m 10m (s) 2004-02-06 TLN201(F) RESTRICTIONS ON PRODUCT USE 030619EAC * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 5 2004-02-06