Cypress Semiconductor Corporation •198 Champion Court•San Jose,CA 95134-1709•408-943-2600
Document Number: 002-00857 Rev. *G Revised May 19, 2017
S29JL032J
32 Mbit (4M x 8-Bit/2M x 16-Bit), 3 V
Simultaneous Read/Write Flash
Distinctive Characteristics
Architectural Advantages
Simultaneous Read/Write operations
– Data can be continuously read from one bank while executing
erase/program functions in another bank.
– Zero latency between read and write operations
Multiple bank architecture
– Four bank architectures available (refer to Table 2 on page 12).
Boot sectors
– Top or bottom boot sector configurations available
– Any combination of sectors can be erased
Manufactured on 0.11 µm Process Technology
Secured Silicon Region: Extra 256 byte sector
– Factory locked and identifiable: 16 bytes available for secure,
random factory Electronic Serial Number; verifiable as factory
locked through autoselect function
–Customer lockable: One-time programmable only. Once locked,
data cannot be changed
Zero power operation
– Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
Compatible with JEDEC standards
– Pinout and software compatible with single-power-supply flash
standard
Package Options
48-ball Fine-pitch BGA
48-pin TSOP
Performance Characteristics
High performance
– Access time as fast as 60 ns
– Program time: 6 µs/word typical using accelerated programming
function
Ultra low power consumption (typical values)
– 2 mA active read current at 1 MHz
– 10 mA active read current at 5 MHz
– 200 nA in standby or automatic sleep mode
Cycling endurance: 100K cycles per sector
Data retention: 20 years typical
Software Features
Supports Common Flash Memory Interface (CFI)
Erase suspend/Erase resume
– Suspends erase operations to read data from, or program data to,
a sector that is not being erased, then resumes the erase
operation.
Data# polling and toggle bits
– Provides a software method of detecting the status of program or
erase operations
Unlock bypass program command
– Reduces overall programming time when issuing multiple
program command sequences
Hardware Features
Ready/Busy# output (RY/BY#)
– Hardware method for detecting program or erase cycle
completion
Hardware reset pin (RESET#)
– Hardware method of resetting the internal state machine to the
read mode
WP#/ACC input pin
– Write protect (WP#) function protects the two outermost boot
sectors regardless of sector protect status
– Acceleration (ACC) function accelerates program timing
Sector protection
– Hardware method to prevent any program or erase operation
within a sector
– Temporary Sector Unprotect allows changing data in protected
sectors in-system
General Description
The S29JL032J is a 32 Mbit, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes
of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be
programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.
The device is available with an access time of 60, or 70 ns and is offered in a 48-ball FBGA or a 48-pin TSOP package. Standard
control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and
avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the program and erase operations.
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S29JL032J
Contents
Distinctive Characteristics .................................................. 1
General Description ............................................................. 1
1. Simultaneous Read/Write Operations with Zero Laten-
cy ....................................................................................... 3
1.1 S29JL032J Features...................................................... 3
2. Product Selector Guide............................................... 4
3. Block Diagram.............................................................. 4
3.1 4-Bank Device................................................................ 4
3.2 2-Bank Device................................................................ 5
4. Connection Diagrams.................................................. 6
4.1 48-pin TSOP Package ................................................... 6
4.2 48-ball FBGA Package .................................................. 6
5. Pin Description............................................................. 7
6. Logic Symbol ............................................................... 7
7. Ordering Information................................................... 8
8. Device Bus Operations................................................ 9
8.1 Word/Byte Configuration................................................ 9
8.2 Requirements for Reading Array Data......................... 10
8.3 Writing Commands/Command Sequences.................. 10
8.4 Simultaneous Read/Write Operations with Zero Latency .
11
8.5 Standby Mode.............................................................. 11
8.6 Automatic Sleep Mode................................................. 11
8.7 RESET#: Hardware Reset Pin..................................... 11
8.8 Output Disable Mode ................................................... 12
8.9 Autoselect Mode .......................................................... 17
8.10 Boot Sector/Sector Block Protection and Unprotection 18
8.11 Write Protect (WP#) ..................................................... 20
8.12 Temporary Sector Unprotect........................................ 20
8.13 Secured Silicon Region................................................ 22
8.14 Hardware Data Protection............................................ 23
9. Common Flash Memory Interface (CFI)................... 24
10. Command Definitions................................................ 27
10.1 Reading Array Data ..................................................... 27
10.2 Reset Command .......................................................... 27
10.3 Autoselect Command Sequence ................................. 28
10.4 Enter Secured Silicon Region/Exit Secured Silicon Region
Command Sequence ................................................... 28
10.5 Byte/Word Program Command Sequence................... 28
10.6 Chip Erase Command Sequence ................................ 30
10.7 Sector Erase Command Sequence ............................. 30
10.8 Erase Suspend/Erase Resume Commands ................ 32
11. Write Operation Status.............................................. 34
11.1 DQ7: Data# Polling ...................................................... 34
11.2 RY/BY#: Ready/Busy#................................................. 35
11.3 DQ6: Toggle Bit I ......................................................... 35
11.4 DQ2: Toggle Bit II ........................................................ 37
11.5 Reading Toggle Bits DQ6/DQ2.................................... 37
11.6 DQ5: Exceeded Timing Limits ..................................... 37
11.7 DQ3: Sector Erase Timer.............................................. 38
12. Absolute Maximum Ratings....................................... 39
13. Operating Ranges....................................................... 40
14. DC Characteristics...................................................... 40
14.1 CMOS Compatible ........................................................ 40
14.2 Zero-Power Flash ......................................................... 41
15. Test Conditions........................................................... 43
16. Key To Switching Waveforms.................................... 43
17. AC Characteristics...................................................... 44
17.1 Read-Only Operations .................................................. 44
17.2 Hardware Reset (RESET#)........................................... 45
17.3 Word/Byte Configuration (BYTE#) ................................ 46
17.4 Erase and Program Operations .................................... 47
17.5 Temporary Sector Unprotect......................................... 51
17.6 Alternate CE# Controlled Erase and Program Operations
52
18. Data Integrity............................................................... 54
18.1 Erase Endurance .......................................................... 54
18.2 Data Retention .............................................................. 54
19. Erase and Programming Performance ..................... 55
20. Pin Capacitance.......................................................... 55
21. Physical Dimens ions.................................................. 56
21.1 TS 048—48-Pin Standard TSOP.................................. 56
21.2 VBK048—48-Pin FBGA ................................................ 57
22. Document History....................................................... 58
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S29JL032J
1. Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into separate banks
(see Table 2 on page 12). Sector addresses are fixed, system software can be used to form user-defined bank groups.
During an Erase/Program operation, any of the non-busy banks may be read from. Note that only two banks can operate
simultaneously. The device can improve overall system performance by allowing a host system to program or erase in one bank,
then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the
completion of program or erase operations.
The S29JL032J can be organized with either a top or bottom boot sector configuration.
1.1 S29JL032J Features
The Secured Silicon Region is an extra 256 byte sector capable of being permanently locked by the customer. The Secured Silicon
Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been locked and is 0 if lockable.
Customers may utilize the Secured Silicon Region as bonus space, reading and writing like any other flash sector, or may
permanently lock their own code there.
The device offers complete compatibility with the JEDEC 42.4 single-power-supply Flash command set standard. Commands
are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or erase operation is complete by using the device status bits: RY/BY# pin, DQ7
(Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to
the read mode.
The sector er ase architectur e allows memory sectors to be erased and reprogrammed without affecting the data contents of other
sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power
transitions. The hardware sector prote ction feature disables both program and erase operations in any combination of the sectors
of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or
program data to, any sector that is not selected for erasure. True background erase can thus be achieved. If a read is needed from
the Secured Silicon Region area (One Time Program area) after an erase suspend, then the user must use the proper command
sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters
the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in
both modes.
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S29JL032J
2. Product Selector Guide
3. Block Diagram
3.1 4-Bank Device
Part Number S29JL032J
Speed Option Standard Voltage Range: VCC = 3.0–3.6 V 60
Standard Voltage Range: VCC = 2.7–3.6 V 70
Max Access Time (ns), tACC 60 70
CE# Access (ns), tCE 60 70
OE# Access (ns), tOE 25 30
V
CC
V
SS
Bank 1 Address
Bank 2 Address
A20–A0
RESET#
WE#
CE#
BYTE#
DQ0–DQ15
WP#/ACC
STATE
CONTROL
&
COMMAND
REGISTER
RY/BY#
Bank 1
X-Decoder
OE# BYTE#
DQ15–DQ0
Status
Control
A20–A0
A20–A0
A20–A0A20–A0
DQ15–DQ0
DQ15–DQ0
DQ15–DQ0
DQ15–DQ0
Mux
Mux
Mux
Bank 2
X-Decoder
Y-gate
Bank 3
X-Decoder
Bank 4
X-Decoder
Y-gate
Bank 3 Address
Bank 4 Address
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S29JL032J
3.2 2-Bank Device
V
CC
V
SS
Upper Bank Address
A20–A0
RESET#
WE#
CE#
BYTE#
DQ15–DQ0
WP#/ACC
STATE
CONTROL
&
COMMAND
REGISTER
RY/BY#
Upper Bank
X-Decoder
Y-Decoder
Latches and Control Logic
OE# BYTE#
DQ15–DQ0
Lower Bank
Y-Decoder
X-Decoder
Latches and
Control Logic
Lower Bank Address
OE# BYTE#
Status
Control
A20–A0
A20–A0
A20–A0A20–A0
DQ15–DQ0 DQ15–DQ0
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S29JL032J
4. Connection Diagrams
4.1 48-pin TSOP Package
4.2 48-ball FBGA Package
1
16
2
3
4
5
6
7
8
17
18
19
20
21
22
23
24
9
10
11
12
13
14
15
48
33
47
46
45
44
43
42
41
40
39
38
37
36
35
34
25
32
31
30
29
28
27
26
A15
A18
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
NC
WP#/ACC
RY/BY#
A1
A17
A7
A6
A5
A4
A3
A2
A16
DQ2
BYTE#
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
48-Pin Standard TSOP
B3 C3 D3 E3 F3 G3 H3
B4 C4 D4 E4 F4 G4 H4
B5 C5 D5 E5 F5 G5 H5
B6 C6 D6 E6 F6 G6 H6
VSS
DQ15/A-1BYTE#A16A15A14A12
DQ6DQ13DQ14DQ7A11A10A8
DQ4VCC
DQ12DQ5A19NCRESET#
DQ3DQ11DQ10DQ2A20A18WP#/ACC
A3
A4
A5
A6
A13
A9
WE#
RY/BY#
B2 C2 D2 E2 F2 G2 H2
DQ1DQ9DQ8DQ0A5A6A17
A2
A7
B1 C1 D1 E1 F1 G1 H1
VSS
OE#CE#A0A1A2A4
A1
A3
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S29JL032J
5. Pin Description
6. Logic Symbol
A20–A0 21 Address Pins
DQ14–DQ0 15 Data Inputs/Outputs (x16-only devices)
DQ15/A-1 DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode)
CE# Chip Enable, Active Low
OE# Output Enable, Active Low
WE# Write Enable, Active Low
WP#/ACC Hardware Write Protect/Acceleration Pin.
RESET# Hardware Reset Pin, Active Low
BYTE# Selects 8-bit or 16-bit mode, Active Low
RY/BY# Ready/Busy Output, Active Low
VCC 3.0 volt-only single power supply (see Product Selector Guide on page 4 for speed options and voltage
supply tolerances)
VSS Device Ground
NC
Not Connected – No device internal signal is connected to the package connector nor is there any future
plan to use the connector for a signal. The connection may safely be used for routing space for a signal
on a Printed Circuit Board (PCB).
21
16 or 8
DQ15–DQ0
(A-1)
A20–A0
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
WP#/ACC
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S29JL032J
7. Ordering Information
The order number (Valid Combination) is formed by the following:
Note:
1. Type 0 is standard. Specify others as required.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local Cypress sales office to
confirm availability of specific valid combinations and to check on newly released combinations.
S29JL032J 60 T F I 01 0 Packing Type
0=Tray
3 = 13-inch Tape and Reel
Model Number
01 = Top Boot Device, 4 Banks: 4/12/12/4 Mb
02 = Bottom Boot Device, 4 Banks: 4/12/12/4 Mb
21 = Top Boot Device, 2 Banks: 4/28 Mb
22 = Bottom Boot Device, 2 Banks: 4/28 Mb
31 = Top Boot Device, 2 Banks: 8/24 Mb
32 = Bottom Boot Device, 2 Banks: 8/24 Mb
41 = Top Boot Device, 2 Banks: 16/16 Mb
42 = Bottom Boot Device, 2 Banks: 16/16 Mb
Temperature Range
I = Industrial (–40°C to +85°C)
Package Material Set
F = Pb-free
H = Low-halogen, Pb-free
Package Type
B = Fine-pitch Ball Grid Array Package
T = Thin Small Outline Package (TSOP) Standard Pinout
Speed Option
60 = 60 ns
70 = 70 ns
Device Family
S29JL032J
3.0 Volt-only, 32 Mbit (2 M x 16-Bit/4 M x 8-Bit) Simultaneous Read/Write Flash Memory
Manufactured on 110 nm process technology
S29JL032J Valid Combinations
Device
Number/
Description Speed (ns) Package
Type
Temperat
ure
Range Additional
Ordering Options Packing
Type Package
Description
S29JL032J 60, 70
TF
I
01, 02, 21, 22, 31, 32, 41,
42 0, 3 (1)
TS048 TSOP
BH 31, 32 VBK04
8FBGA
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S29JL032J
8. Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the internal command
register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the
commands, along with the address and data information needed to execute the command. The contents of the register serve as
inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus
operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these
operations in further detail.
Legend:
L = Logic Low = VIL
H = Logic High = VIH
VID = 8.5–12.5V
VHH = 9.0 ± 0.5V
X = Don’t Care
SA = Sector Address
AIN = Address In
DIN = Data In
DOUT = Data Out
Notes:
1. Addresses are A 20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Boot Sector/Sector Block
Protection and Unprotection on page 18.
3. If WP#/ACC = VIL, the two outermost boot sectors remain prot ected. If WP#/ACC = V IH, protection on the two outermo st boot sectors depen ds on
whether they were last protec ted or unprotected using the method described in Boot Sector/Sector Block Protection and Unprotecti on on page 18.
If WP#/ACC = VHH, all sectors will be unprotected.
8.1 Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic
‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ7–DQ0 are active and controlled by
CE# and OE#. The data I/O pins DQ14–DQ8 are tristated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
Table 1. S29JL032J Device Bus Operations
Operation CE# OE# WE# RESET# WP#/
ACC Addresses
(Note 1)
DQ15–DQ8
DQ7–DQ0BYTE# = VIH BYTE# = VIL
Read L L H H L/H AIN DOUT DQ14–DQ8 =
High-Z, DQ15 = A-
1
DOUT
Write L H L H (Note 3) AIN DIN DIN
Standby VCC
0.3V XX
VCC
0.3V L/H X High-Z High-Z High-Z
Output Disable L H H H L/H X High-Z High-Z High-Z
Reset X X X L L/H X High-Z High-Z High-Z
Sector Protect
(Note 2) LHLV
ID L/H
SA, A6 = L,
A1 = H, A0 =
L
XXD
IN
Sector Unprotect
(Note 2) LHLV
ID (Note 3)
SA, A6 = H,
A1 = H, A0 =
L
XXD
IN
Temporary
Sector Unprotect XXXV
ID (Note 3) AIN DIN High-Z DIN
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8.2 Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the
device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines
whether the device outputs array data in words or bytes.
The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no
spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the
device data outputs. Each bank remains enabled for read access until the command register contents are altered.
Refer to the Read-Only Operations on page 44 for timing specifications and to Figure 17.1 on page 44 for the timing diagram. ICC1 in
DC Characteristics on page 40 represents the active current specification for reading array data.
8.3 Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the
system must drive WE# and CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to Word/Byte
Configuration on page 9 for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only
two write cycles are required to program a word or byte, instead of four. Byte/Word Program Command Sequence on page 28 has
details on programming data to the device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 3 on page 13 and Table 4 on page 15 indicate
the address space that each sector occupies. Similarly, a “sector address” is the address bits required to uniquely select a sector.
Command Definitions on page 27 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation.
The device address space is divided into four banks. A “bank address” is the address bits required to uniquely select a bank.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. AC Characteristics on page 44
contains timing specification tables and timing diagrams for write operations.
8.3.1 Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC
pin. This function is primarily intended to allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily
unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The
system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/
ACC pin returns the device to normal operation. Note that VHH must not be asserted on WP#/ACC for operations other than
accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected;
inconsistent behavior of the device may result. See Write Protect (WP#) on page 20 for related information.
8.3.2 Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read
autoselect codes from the internal register (which is separate from the memory array) on DQ15–DQ0. Standard read cycle timings
apply in this mode. Refer to Autoselect Mode on page 17 and Autoselect Command Sequence on page 28 for more information.
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8.4 Simultaneous Read/Write Operations with Zero Latency
This device is capable of reading data from one bank of memory while programming or erasing in another bank of memory. An erase
operation may also be suspended to read from or program to another location within the same bank (except the sector being
erased). Figure 17.8 on page 49 shows how read and write cycles may be initiated for simultaneous operation with zero latency.
ICC6 and ICC7 in DC Characteristics on page 40 represent the current specifications for read-while-program and read-while-erase,
respectively.
8.5 Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3V. Note that this is a more
restricted voltage range than VIH. If CE# and RESET# are held at VIH, but not within VCC ± 0.3V, the device will be in the standby
mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in
either of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation is completed.
ICC3 in DC Characteristics on page 40 represents the standby current specification.
8.6 Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when
addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals.
Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and
always available to the system. ICC5 in DC Characteristics on page 40 represents the automatic sleep mode current specification.
8.7 RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for
at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/
write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3V, the device draws CMOS standby
current (ICC4). If RESET# is held at VIL but not within VSS±0.3V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the
system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is
complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is
“1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after
the RESET# pin returns to VIH.
Refer to Hardware Reset (RESET#) on page 45 for RESET# parameters and to Figure 17.2 on page 45 for the timing diagram.
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S29JL032J
8.8 Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state.
Table 2. S29JL032J Bank Architecture
Device
Model
Number
Bank 1 Bank 2 Bank 3 Bank 4
Mbit Sector Size Mbit Sector Size Mbit Sector Size Mbit Sector Size
01, 02 4 Mbit
Eight
8 kbyte/
4kword,
seven
64 kbyte/
32 kword
12 Mbit
Twenty-four
64 kbyte/
32 kword
12 Mbit
Twenty-four
64 kbyte/
32 kword
4Mbit Eight 64 kbyte/
32 kword
Device Model
Number
Bank 1 Bank 2
Mbits Sector Size Mbit Sector Size
21, 22 4 Mbit Eight 8 kbyte/4 kword,
seven 64 kbyte/32 kword 28 Mbit Fifty-six
64 kbyte/32 kword
31, 32 8 Mbit Eight 8 kbyte/4 kword,
fifteen 64 kbyte/32 kword 24 Mbit Forty-eight
64 kbyte/32 kword
41, 42 16 Mbit Eight 8 kbyte/4 kword,
thirty-one 64 kbyte/32 kword 16 Mbit Thirty-two
64 kbyte/32 kword
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S29JL032J
Table 3. S29JL032J Sector Addresses - Top Boot Devices (Sheet 1 of 2)
S29JL032J (Model 41)
S29JL032J (Model 31)
S29JL032J (Model 21)
S29JL032J (Model 01)
Sector
Sector
Address
A20–A12
Sector Size
(kbytes/
kwords) (x8)
Address Range (x16)
Address Range
Bank 2
Bank 2
Bank 2
Bank 4
SA0 000000xxx 64/32 000000h-00FFFFh 000000h-07FFFh
SA1 000001xxx 64/32 010000h-01FFFFh 008000h-0FFFFh
SA2 000010xxx 64/32 020000h-02FFFFh 010000h-17FFFh
SA3 000011xxx 64/32 030000h-03FFFFh 018000h-01FFFFh
SA4 000100xxx 64/32 040000h-04FFFFh 020000h-027FFFh
SA5 000101xxx 64/32 050000h-05FFFFh 028000h-02FFFFh
SA6 000110xxx 64/32 060000h-06FFFFh 030000h-037FFFh
SA7 000111xxx 64/32 070000h-07FFFFh 038000h-03FFFFh
Bank 3
SA8 001000xxx 64/32 080000h-08FFFFh 040000h-047FFFh
SA9 001001xxx 64/32 090000h-09FFFFh 048000h-04FFFFh
SA10 001010xxx 64/32 0A0000h-0AFFFFh 050000h-057FFFh
SA11 001011xxx 64/32 0B0000h-0BFFFFh 058000h-05FFFFh
SA12 001100xxx 64/32 0C0000h-0CFFFFh 060000h-067FFFh
SA13 001101xxx 64/32 0D0000h-0DFFFFh 068000h-06FFFFh
SA14 001110xxx 64/32 0E0000h-0EFFFFh 070000h-077FFFh
SA15 001111xxx 64/32 0F0000h-0FFFFFh 078000h-07FFFFh
SA16 010000xxx 64/32 100000h-10FFFFh 080000h-087FFFh
SA17 010001xxx 64/32 110000h-11FFFFh 088000h-08FFFFh
SA18 010010xxx 64/32 120000h-12FFFFh 090000h-097FFFh
SA19 010011xxx 64/32 130000h-13FFFFh 098000h-09FFFFh
SA20 010100xxx 64/32 140000h-14FFFFh 0A0000h-0A7FFFh
SA21 010101xxx 64/32 150000h-15FFFFh 0A8000h-0AFFFFh
SA22 010110xxx 64/32 160000h-16FFFFh 0B0000h-0B7FFFh
SA23 010111xxx 64/32 170000h-17FFFFh 0B8000h-0BFFFFh
SA24 011000xxx 64/32 180000h-18FFFFh 0C0000h-0C7FFFh
SA25 011001xxx 64/32 190000h-19FFFFh 0C8000h-0CFFFFh
SA26 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh
SA27 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh
SA28 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh
SA29 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh
SA30 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh
SA31 011111xxx 64/32 1F0000h-1FFFFFh 0F8000h-0FFFFFh
Document Number: 002-00857 Rev. *G Page 14 of 61
S29JL032J
Bank 1
Bank 2 (continued)
Bank 2 (continued)
Bank 2
SA32 100000xxx 64/32 200000h-20FFFFh 100000h-107FFFh
SA33 100001xxx 64/32 210000h-21FFFFh 108000h-10FFFFh
SA34 100010xxx 64/32 220000h-22FFFFh 110000h-117FFFh
SA35 100011xxx 64/32 230000h-23FFFFh 118000h-11FFFFh
SA36 100100xxx 64/32 240000h-24FFFFh 120000h-127FFFh
SA37 100101xxx 64/32 250000h-25FFFFh 128000h-12FFFFh
SA38 100110xxx 64/32 260000h-26FFFFh 130000h-137FFFh
SA39 100111xxx 64/32 270000h-27FFFFh 138000h-13FFFFh
SA40 101000xxx 64/32 280000h-28FFFFh 140000h-147FFFh
SA41 101001xxx 64/32 290000h-29FFFFh 148000h-14FFFFh
SA42 101010xxx 64/32 2A0000h-2AFFFFh 150000h-157FFFh
SA43 101011xxx 64/32 2B0000h-2BFFFFh 158000h-15FFFFh
SA44 101100xxx 64/32 2C0000h-2CFFFFh 160000h-167FFFh
SA45 101101xxx 64/32 2D0000h-2DFFFFh 168000h-16FFFFh
SA46 101110xxx 64/32 2E0000h-2EFFFFh 170000h-177FFFh
SA47 101111xxx 64/32 2F0000h-2FFFFFh 178000h-17FFFFh
Bank 1
SA48 110000xxx 64/32 300000h-30FFFFh 180000h-187FFFh
SA49 110001xxx 64/32 310000h-31FFFFh 188000h-18FFFFh
SA50 110010xxx 64/32 320000h-32FFFFh 190000h-197FFFh
SA51 110011xxx 64/32 330000h-33FFFFh 198000h-19FFFFh
SA52 110100xxx 64/32 340000h-34FFFFh 1A0000h-1A7FFFh
SA53 110101xxx 64/32 350000h-35FFFFh 1A8000h-1AFFFFh
SA54 110110xxx 64/32 360000h-36FFFFh 1B0000h-1BFFFFh
SA55 110111xxx 64/32 370000h-37FFFFh 1B8000h-1BFFFFh
Bank 1
Bank 1
SA56 111000xxx 64/32 380000h-38FFFFh 1C0000h-1C7FFFh
SA57 111001xxx 64/32 390000h-39FFFFh 1C8000h-1CFFFFh
SA58 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h-1DFFFFh
SA59 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh
SA60 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh
SA61 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh
SA62 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh
SA63 111111000 8/4 3F0000h-3F1FFFh 1F8000h-1F8FFFh
SA64 111111001 8/4 3F2000h-3F3FFFh 1F9000h-1F9FFFh
SA65 111111010 8/4 3F4000h-3F5FFFh 1FA000h-1FAFFFh
SA66 111111011 8/4 3F6000h-3F7FFFh 1FB000h-1FBFFFh
SA67 111111100 8/4 3F8000h-3F9FFFh 1FC000h-1FCFFFh
SA68 111111101 8/4 3FA000h-3FBFFFh 1FD000h-1FDFFFh
Table 3. S29JL032J Sector Addresses - Top Boot Devices (Sheet 2 of 2)
S29JL032J (Model 41)
S29JL032J (Model 31)
S29JL032J (Model 21)
S29JL032J (Model 01)
Sector
Sector
Address
A20–A12
Sector Size
(kbytes/
kwords) (x8)
Address Range (x16)
Address Range
Document Number: 002-00857 Rev. *G Page 15 of 61
S29JL032J
Table 4. S29JL032J Sector Addresses - Bottom Boot Devices (Sheet 1 of 2)
S29JL032J (Model 42)
S29JL032J (Model 32)
S29JL032J (Model 22)
S29JL032J (Model 02)
Sector Sector Address
A20–A12 Sector Si ze
(kbytes/kwords) (x8)
Address Range (x16)
Address Range
Bank 1
Bank 1
Bank 1
Bank 1
SA0 000000000 8/4 000000h-001FFFh 000000h-000FFFh
SA1 000000001 8/4 002000h-003FFFh 001000h-001FFFh
SA2 000000010 8/4 004000h-005FFFh 002000h-002FFFh
SA3 000000011 8/4 006000h-007FFFh 003000h-003FFFh
SA4 000000100 8/4 008000h-009FFFh 004000h-004FFFh
SA5 000000101 8/4 00A000h-00BFFFh 005000h-005FFFh
SA6 000000110 8/4 00C000h-00DFFFh 006000h-006FFFh
SA7 000000111 8/4 00E000h-00FFFFh 007000h-007FFFh
SA8 000001xxx 64/32 010000h-01FFFFh 008000h-00FFFFh
SA9 000010xxx 64/32 020000h-02FFFFh 010000h-017FFFh
SA10 000011xxx 64/32 030000h-03FFFFh 018000h-01FFFFh
SA11 000100xxx 64/32 040000h-04FFFFh 020000h-027FFFh
SA12 000101xxx 64/32 050000h-05FFFFh 028000h-02FFFFh
SA13 000110xxx 64/32 060000h-06FFFFh 030000h-037FFFh
SA14 000111xxx 64/32 070000h-07FFFFh 038000h-03FFFFh
Bank 2
Bank 2
SA15 001000xxx 64/32 080000h-08FFFFh 040000h-047FFFh
SA16 001001xxx 64/32 090000h-09FFFFh 048000h-04FFFFh
SA17 001010xxx 64/32 0A0000h-0AFFFFh 050000h-057FFFh
SA18 001011xxx 64/32 0B0000h-0BFFFFh 058000h-05FFFFh
SA19 001100xxx 64/32 0C0000h-0CFFFFh 060000h-067FFFh
SA20 001101xxx 64/32 0D0000h-0DFFFFh 068000h-06FFFFh
SA21 001110xxx 64/32 0E0000h-0EFFFFh 070000h-077FFFh
SA22 001111xxx 64/32 0F0000h-0FFFFFh 078000h-07FFFFh
Bank 2
SA23 010000xxx 64/32 100000h-10FFFFh 080000h-087FFFh
SA24 010001xxx 64/32 110000h-11FFFFh 088000h-08FFFFh
SA25 010010xxx 64/32 120000h-12FFFFh 090000h-097FFFh
SA26 010011xxx 64/32 130000h-13FFFFh 098000h-09FFFFh
SA27 010100xxx 64/32 140000h-14FFFFh 0A0000h-0A7FFFh
SA28 010101xxx 64/32 150000h-15FFFFh 0A8000h-0AFFFFh
SA29 010110xxx 64/32 160000h-16FFFFh 0B0000h-0B7FFFh
SA30 010111xxx 64/32 170000h-17FFFFh 0B8000h-0BFFFFh
SA31 011000xxx 64/32 180000h-18FFFFh 0C0000h-0C7FFFh
SA32 011001xxx 64/32 190000h-19FFFFh 0C8000h-0CFFFFh
SA33 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh
SA34 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh
SA35 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh
SA36 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh
SA37 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh
SA38 011111xxx 64/32 1F0000h-1FFFFFh 0F8000h-0FFFFFh
Document Number: 002-00857 Rev. *G Page 16 of 61
S29JL032J
Bank 2
Bank 2 (continued)
Bank 2 (continued)
Bank 3
SA39 100000xxx 64/32 200000h-20FFFFh 100000h-107FFFh
SA40 100001xxx 64/32 210000h-21FFFFh 108000h-10FFFFh
SA41 100010xxx 64/32 220000h-22FFFFh 110000h-117FFFh
SA42 100011xxx 64/32 230000h-23FFFFh 118000h-11FFFFh
SA43 100100xxx 64/32 240000h-24FFFFh 120000h-127FFFh
SA44 100101xxx 64/32 250000h-25FFFFh 128000h-12FFFFh
SA45 100110xxx 64/32 260000h-26FFFFh 130000h-137FFFh
SA46 100111xxx 64/32 270000h-27FFFFh 138000h-13FFFFh
SA47 101000xxx 64/32 280000h-28FFFFh 140000h-147FFFh
SA48 101001xxx 64/32 290000h-29FFFFh 148000h-14FFFFh
SA49 101010xxx 64/32 2A0000h-2AFFFFh 150000h-157FFFh
SA50 101011xxx 64/32 2B0000h-2BFFFFh 158000h-15FFFFh
SA51 101100xxx 64/32 2C0000h-2CFFFFh 160000h-167FFFh
SA52 101101xxx 64/32 2D0000h-2DFFFFh 168000h-16FFFFh
SA53 101110xxx 64/32 2E0000h-2EFFFFh 170000h-177FFFh
SA54 101111xxx 64/32 2F0000h-2FFFFFh 178000h-17FFFFh
SA55 110000xxx 64/32 300000h-30FFFFh 180000h-187FFFh
SA56 110001xxx 64/32 310000h-31FFFFh 188000h-18FFFFh
SA57 110010xxx 64/32 320000h-32FFFFh 190000h-197FFFh
SA58 110011xxx 64/32 330000h-33FFFFh 198000h-19FFFFh
SA59 110100xxx 64/32 340000h-34FFFFh 1A0000h-1A7FFFh
SA60 110101xxx 64/32 350000h-35FFFFh 1A8000h-1AFFFFh
SA61 110110xxx 64/32 360000h-36FFFFh 1B0000h-1B7FFFh
SA62 110111xxx 64/32 370000h-37FFFFh 1B8000h-1BFFFFh
Bank 4
SA63 111000xxx 64/32 380000h-38FFFFh 1C0000h-1C7FFFh
SA64 111001xxx 64/32 390000h-39FFFFh 1C8000h-1CFFFFh
SA65 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh
SA66 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh
SA67 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh
SA68 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh
SA69 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh
SA70 111111xxx 64/32 3F0000h-3F1FFFh 1F8000h-1FFFFFh
Table 4. S29JL032J Sector Addresses - Bottom Boot Devices (Sheet 2 of 2)
S29JL032J (Model 42)
S29JL032J (Model 32)
S29JL032J (Model 22)
S29JL032J (Model 02)
Sector Sector Address
A20–A12 Sector Si ze
(kbytes/kwords) (x8)
Address Range (x16)
Address Range
Document Number: 002-00857 Rev. *G Page 17 of 61
S29JL032J
8.9 Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes
output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be
programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system
through the command register.
When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins must be as shown in
Table 5. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits.
Table 5 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming
equipment may then read the corresponding identifier code on DQ7–DQ0. However, the autoselect codes can also be accessed in-
system through the command register, for instances when the S29JL032J is erased or programmed in a system without access to
high voltage on the A9 pin. The command sequence is illustrated in Table 13 on page 33. Note that if a Bank Address (BA) on
address bits A20, A19 and A18 is asserted during the third write cycle of the autoselect command, the host system can read
autoselect data from that bank and then immediately read array data from another bank, without exiting the autoselect mode.
To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown
in Table 13 on page 33. This method does not require VID. Refer to Autoselect Command Sequence on page 28 for more
information.
Legend:
L = Logic Low = V
IL
H = Logic High = V
IH
BA = Bank Address
SA = Sector Address
X = Don’t care
.
Table 5. S29JL032J Autoselect Codes (High Voltage Method)
Description CE# OE# WE#
A20
to
A12
A11
to
A10 A9
A8
to
A7 A6
A5
to
A4 A3 A2 A1 A0
DQ15 to DQ8 DQ7
to
DQ0
BYTE#
= VIH
BYTE#
= VIL
Manufacturer ID:
Cypress Products LL HBAXV
ID X L X L L L L X X 01h
Device ID
(Models 01, 02)
Read Cycle 1
LL HBAXV
ID X
L
X
LLLH 22h
X
7Eh
Read Cycle 2 L H H H L 22h 0Ah
Read Cycle 3 L HHHH 22h 00h (bottom boot)
01h (top boot)
Device ID
(Models 21, 22) LL HBAXV
ID XLXXXLH 22h X 56h (bottom boot)
55h (top boot)
Device ID
(Models 31, 32) LL HBAXV
ID XLXXXLH 22h X 53h (bottom boot)
50h (top boot)
Device ID
(Models 41, 42) LL HBAXV
ID XLXXXLH 22h X 5Fh (bottom boot)
5Ch (top boot)
Sector Protection
Verification LL HSAXV
ID XLXLLHL X X 01h (protected),
00h (unprotected)
Secured Silicon
Indicator Bit (DQ6,
DQ7)
LL HBAXV
ID XLXLLHH X X
82h (Factory Locked),
42h (Customer
Locked),
02h (Not Locked)
Document Number: 002-00857 Rev. *G Page 18 of 61
S29JL032J
8.10 Boot Sector/Sector Block Protection and Unprotection
Note: For the following discussion, the term “sector” applies to both boot secto rs and se ctor blocks. A sector block c onsists of two or
more adjacent sectors that are protected or unprotected at the same time (see Table 6).
The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection
feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be
implemented via two methods.
Table 6. S29JL032J Boot Sector/Sector Block Addresses for Protection/Unprotection (Top Boot Devices)
Sector A20-A12 Sector/
Sector Block Size
SA0 000000XXX 64 kbytes
SA1-SA3
000001XXX
000010XXX
000011XXX
192 (3X64) kbytes
SA4-SA7 0001XXXXX 256 (4X64) kbytes
SA8-SA11 0010XXXXX 256 (4X64) kbytes
SA12-SA15 0011XXXXX 256 (4X64) kbytes
SA16-SA19 0100XXXXX 256 (4X64) kbytes
SA20-SA23 0101XXXXX 256 (4X64) kbytes
SA24-SA27 0110XXXXX 256 (4X64) kbytes
SA28-SA31 0111XXXXX 256 (4X64) kbytes
SA32-SA35 1000XXXXX 256 (4X64) kbytes
SA36-SA39 1001XXXXX 256 (4X64) kbytes
SA40-SA43 1010XXXXX 256 (4X64) kbytes
SA44-SA47 1011XXXXX 256 (4X64) kbytes
SA48-SA51 1100XXXXX 256 (4X64) kbytes
SA52-SA55 1101XXXXX 256 (4X64) kbytes
SA56-SA59 1110XXXXX 256 (4X64) kbytes
SA60-SA62
111100XXX
111101XXX
111110XXX
192 (3X64) kbytes
SA63 111111000 8 kbytes
SA64 111111001 8 kbytes
SA65 111111010 8 kbytes
SA66 111111011 8 kbytes
SA67 111111100 8 kbytes
SA68 111111101 8 kbytes
SA69 111111110 8 kbytes
SA70 111111111 8 kbytes
Document Number: 002-00857 Rev. *G Page 19 of 61
S29JL032J
Sector Protect/Sector Unprotect requires VID on the RESET# pin only, and can be implemented either in-system or via programming
equipment. Figure 8.2 on page 21 shows the algorithms and Figure 17.13 on page 52 shows the timing diagram. For sector
unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. Note th at the sector unp rotec t
algorithm unprotects all sectors in parallel. All previously protected sectors must be individually re-protected. To change data in
protected sectors efficiently, the temporary sector unprotect function is available. See Temporary Sector Unprotect on page 20.
The device is shipped with all sectors unprotected. Optional Cypress programming service enable programming and protecting
sectors at the factory prior to shipping the device. Contact your local sales office for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode on page 17 for details.
Table 7. S29JL032J Sector/Sector Block Addresses for Protection/Unprotection (Bottom Boot Devices)
Sector A20-A12 Sector/
Sector Block Size
SA70 111111XXX 64 kbytes
SA69-SA67
111110XXX
111101XXX
111100XXX
192 (3X64) kbytes
SA66-SA63 1110XXXXX 256 (4X64) kbytes
SA62-SA59 1101XXXXX 256 (4X64) kbytes
SA58-SA55 1100XXXXX 256 (4X64) kbytes
SA54-SA51 1011XXXXX 256 (4X64) kbytes
SA50-SA47 1010XXXXX 256 (4X64) kbytes
SA46-SA43 1001XXXXX 256 (4X64) kbytes
SA42-SA39 1000XXXXX 256 (4X64) kbytes
SA38-SA35 0111XXXXX 256 (4X64) kbytes
SA34-SA31 0110XXXXX 256 (4X64) kbytes
SA30-SA27 0101XXXXX 256 (4X64) kbytes
SA26-SA23 0100XXXXX 256 (4X64) kbytes
SA22-SA19 0011XXXXX 256 (4X64) kbytes
SA18-SA15 0010XXXXX 256 (4X64) kbytes
SA14-SA11 0001XXXXX 256 (4X64) kbytes
SA10-SA8
000011XXX
000010XXX
000001XXX
192 (3X64) kbytes
SA7 000000111 8 kbytes
SA6 000000110 8 kbytes
SA5 000000101 8 kbytes
SA4 000000100 8 kbytes
SA3 000000011 8 kbytes
SA2 000000010 8 kbytes
SA1 000000001 8 kbytes
SA0 000000000 8 kbytes
Document Number: 002-00857 Rev. *G Page 20 of 61
S29JL032J
8.11 Write Protect (WP#)
The Write Protect function provides a hardware method of protecting certain boot sectors without using VID. This function is one of
two provided by the WP#/ACC pin.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two outermost 8 kbyte boot
sectors independently of whether those sectors were protected or unprotected using the method described in Boot Sector/Sector
Block Protection and Unprotection on page 18. The two outermost 8 kbyte boot sectors are the two sectors containing the lowest
addresses in a bottom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-configured device.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8K Byte boot sectors were last set to
be protected or unprotected. That is, sector protection or unprotection for these two sectors depends on whether they were last
protected or unprotected using the method described in Boot Sector/Sector Block Protection and Unprotection on page 18.
Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may res ult.
8.12 Temporary Sector Unprotect
Note: For the followin g discussion, the term “sector” applies to both sectors and sector blocks. A sector bloc k consists of two or more
adjacent sectors that are protected or unpr otected at the same time (see Table 6 on page 18 and Table 7 on page 19).
This feature allows temporary unprotection of previously protected sectors to change data in-system. The Temporary Sector
Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or
erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 8.1 shows the algorithm, and Figure 17.12 on page 51 shows the timing diagrams, for this feature. If the
WP#/ACC pin is at VIL,
the two outermost boot sectors
will remain protected during the Temporary sector Unprotect mode.
Figure 8.1 Temporary Sector Unprotect Operation
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL, the outermost two boot sectors will remain protected).
2. All previously protected sectors are protected once again.
Table 8. WP#/ACC Modes
WP# Input Voltage Device Mode
VIL Disables programming and erasing in the two outermost boot sectors
VIH
Enables programming and erasing in the two outermost boot sectors, dependent on whether they were last
protected or unprotected
VHH Enables accelerated programming (ACC). See Accelerated Program Operation on page 10.
START
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
RESET# = VID
(Note 1)
Document Number: 002-00857 Rev. *G Page 21 of 61
S29JL032J
Figure 8.2 In-System Sector Protect/Unprotect Algorithms
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Set up sector
address
Wait 150 µs
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
START
PLSCNT = 1
RESET# = V
ID
Wait 1 ms
First Write
Cycle = 60h?
Data = 01h?
Remove V
ID
from RESET#
Write reset
command
Sector Protect
complete
Yes
Yes
No
PLSCNT
= 25?
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Set up first sector
address
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
START
PLSCNT = 1
RESET# = V
ID
Wait 1 ms
Data = 00h?
Last sector
verified?
Remove V
ID
from RESET#
Write reset
command
Sector Unprotect
complete
Yes
No
PLSCNT
= 1000?
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Unprotect Mode
No All sectors
protected?
Yes
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
Set up
next sector
address
No
Yes
No
Yes
No
No
Yes
No
Sector Protect
Algorithm
Sector Unprotect
Algorithm
First Write
Cycle = 60h?
Protect another
sector?
Reset
PLSCNT = 1
Document Number: 002-00857 Rev. *G Page 22 of 61
S29JL032J
8.13 Secured Silicon Region
The Secured Silicon Region feature provides a Flash memory region that enables permanent part identification through an
Electronic Serial Number (ESN). The Secured Silicon Region is 256 bytes in length, and may shipped unprotected, allowing
customers to utilize that sector in any manner they choose, or may shipped locked at the factory (upon customer request). The
Secured Silicon Indicator Bit data will be 82h if factory locked, 42h if customer locked, or 02h if neither. Refer to Table 5 on page 17
for more details.
The system accesses the Secured Silicon through a command sequence (see Enter Secured Silicon Region/Exit Secured Silicon
Region Command Sequence on page 28). After the system has written the Enter Secured Silicon Region command sequence, it
may read the Secured Silicon Region by using the addresses normally occupied by the boot sectors. This mode of operation
continues until the system issues the Exit Secured Silicon Region command sequence, or until power is removed from the device.
On power-up, or following a hardware reset, the device reverts to sending commands to the first 256 bytes of Sector 0. Note that the
ACC function and unlock bypass modes are not available when the Secured Silicon Region is enabled.
8.13.1 Factory Locked: Secured Silicon Region Programmed and Protected At the
Factory
In a factory locked device, the Secured Silicon Region is protected when the device is shipped from the factory. The Secured Silicon
Region cannot be modified in any way. The device is preprogrammed with both a random number and a secure ESN. The 8-word
random number is at addresses 000000h-000007h in word mode (or 000000h-00000Fh in byte mode). The secure ESN is
programmed in the next 8 words at addresses 000008h-00000Fh (or 000010h-00001Fh in byte mode). The device is available
preprogrammed with one of the following:
A random, secure ESN only
Customer code through Cypress programming services
Both a random, secure ESN and customer code through Cypress programming services
Contact an your local sales office for details on using Cypress programming services.
8.13.2 Customer Lockable: Secured Silicon Region NOT Programmed or Protected At
the Factory
If the security feature is not required, the Secured Silicon Region can be treated as an additional Flash memory space. The Secured
Silicon Region can be read any number of times, but can be programmed and locked only once. Note that the accelerated
programming (ACC) and unlock bypass functions are not available when programming the Secured Silicon Region.
Write the three-cycle Enter Secured Silicon Region command sequence, and then follow the insystem sector protect algorithm as
shown in Figure 8.2 on page 21, except that RESET# may be at either VIH or VID. This allows in-system protection of the Secured
Silicon Region without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon
Region.
To verify the protect/unprotect status of the Secured Silicon Region, follow the algorithm shown in Figure 8.3 on page 23.
Once the Secured Silicon Region is locked and verified, the system must write the Exit Secured Silicon Region command sequence
to return to reading and writing the remainder of the array. The Secured Silicon Region lock must be used with caution since, once
locked, there is no procedure available for unlocking the Secured Silicon Region area and none of the bits in the Secured Silicon
Region memory space can be modified in any way.
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Figure 8.3 Secured Silicon Region Protect Verify
8.14 Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent
writes (refer to Table 13 on page 33 for command definitions). In addition, the following hardware data protection measures prevent
accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
8.14.1 Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down.
The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent
unintentional writes when VCC is greater than VLKO.
8.14.2 Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.14.3 Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be
a logical zero while OE# is a logical one.
8.14.4 Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal
state machine is automatically reset to the read mode on power-up.
Write 60h to
any address
Write 40h to Secure
Silicon Region address
with A6 = 0,
A1 = 1, A0 = 0
START
RESET# =
VIH or VID
Wait 1 ms
Read from Secure
Silicon Region address
with A6 = 0,
A1 = 1, A0 = 0
If data = 00h,
Secure Silicon Region
is unprotected.
If data = 01h,
Secure Silicon Region
is protected.
Remove VIH or VID
from RESET#
Secured Silicon Region
exit command
Secure Silicon Region
Protect Verify
complete
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9. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows
specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-
independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or
address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses
given in Table 9. To terminate reading CFI data, the system must write the reset command. The CFI Query mode is not accessible
when the device is executing an Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command when the device is in the autoselect mode via the command register only (high
voltage method does not apply). The device enters the CFI query mode, and the system can read CFI data at the addresses given in
Table 9. The system must write the reset command to return to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Contact your local sales office for copies of
these documents.
Table 9. CFI Query Identification String
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h Address for Alternate OEM Extended Table (00h = none exists)
Table 10. System Interface String
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
1Bh 36h 0027h VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch 38h 0036h VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present)
1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present)
1Fh 3Eh 0003h Typical timeout per single byte/word write 2N µs
20h 40h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h 42h 0009h Typical timeout per individual block erase 2N ms
22h 44h 000Fh Typical timeout for full chip erase 2N ms (00h = not supported)
23h 46h 0004h Max. timeout for byte/word write 2N times typical
24h 48h 0000h Max. timeout for buffer write 2N times typical
25h 4Ah 0004h Max. timeout per individual block erase 2N times typical
26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported)
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Table 11. Device Geometry Definition
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
27h 4Eh 0016h Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch 58h 0002h Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
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Table 12. Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h 86h 0031h Major version number, ASCII (reflects modifications to the silicon)
44h 88h 0033h Minor version number, ASCII (reflects modifications to the CFI table)
45h 8Ah 000Ch
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2)
0011 = 0.11 µm Floating Gate
46h 8Ch 0002h Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h 8Eh 0001h Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h 90h 0001h Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h 92h 0004h Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode
4Ah 94h 00XXh
Number of sectors (excluding Bank 1)
XX = 38 (models 01, 02, 21, 22)
XX = 30 (models 31, 32)
XX = 20 (models 41, 42)
4Bh 96h 0000h Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch 98h 0000h Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh 9Ah 0085h ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh 9Ch 0095h ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh 9Eh 000Xh Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
50h A0h 0000h Program Suspend
0 = Not supported, 1 = Supported
57h AEh 000Xh
Bank Organization
00 = Data at 4Ah is zero
X = 4 (4 banks, models 01, 02)
X = 2 (2 banks, all other models)
58h B0h 00XXh
Bank 1 Region Information - Number of sectors on Bank 1
XX = 0F (models 01, 02, 21, 22)
XX = 17 (models 31, 32)
XX = 27 (models 41, 42)
59h B2h 00XXh
Bank 2 Region Information - Number of sectors in Bank 2
XX = 18 (models 01, 02)
XX = 38 (models 21, 22)
XX = 30 (models 31, 32)
XX = 20 (models 41, 42)
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10. Command Definitions
Writing specific address and data sequences into the command register initiates device operations. Table 13 on page 33 defines the
valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place
the device in an unknown state. A hardware reset may be required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE#
or CE#, whichever happens first. Refer to AC Characteristics on page 44 for timing diagrams.
10.1 Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank
is ready to read array data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which
the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the
standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After
completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same
exception. See Erase Suspend/Erase Resume Commands on page 32 for more information.
The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an
active program or erase operation, or if the bank is in the autoselect mode. See Rese t Command on page 27, for more information.
See also Requirements for Reading Array Data on page 10 for more information. Read-Onl y O perations on page 44 provides the
read parameters, and Figure 17.1 on page 44 shows the timing diagram.
10.2 Reset Command
Writing the reset command resets the banks to the read or erase-suspend-read mode.
The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This
resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins.
This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming
begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect
mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the bank to the read mode (or erase-
suspend-read mode if that bank was in Erase Suspend). Please note that the RY/BY# signal remains low until this reset is issued.
5Ah B4h 00XXh
Bank 3 Region Information - Number of sectors in Bank 3
XX = 18 (models 01, 02)
XX = 00 (all other models)
5Bh B6h 00XXh
Bank 4 Region Information - Number of sectors in Bank 4
XX = 08 (models 01, 02)
XX = 00 (all other models)
Table 12. Primary Vendor-Specific Extended Query (Sheet 2 of 2)
Addresses
(Word Mode) Addresses
(Byte Mode) Data Description
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10.3 Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or
not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in
another bank.
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains
the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of
autoselect codes without reinitiating the command sequence.
Table 13 on page 33 shows the address and data requirements. To determine sector protection information, the system must write
to the appropriate bank address (BA) and sector address (SA). Table 3 on page 13 and Table 4 on page 15 show the address range
and bank number associated with each sector.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in
Erase Suspend).
10.4 Enter Secured Silicon Region/Exit Secured Silicon Region Command
Sequence
The system can access the Secured Silicon Region region by issuing the three-cycle Enter Secured Silicon Region command
sequence. The device continues to access the Secured Silicon Region until the system issues the four-cycle Exit Secured Silicon
Region command sequence. The Exit Secured Silicon Region command sequence returns the device to normal operation. The
Secured Silicon Region is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table
13 on page 33 shows the address and data requirements for both command sequences. See also Secured Silicon Region on page 22
for further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Region is
enabled.
10.5 Byte/Word Program Command Sequence
The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle
operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up
command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is
not required to provide further controls or timings. The device automatically provides internally generated program pulses and
verifies the programmed cell margin. Table 13 on page 33 shows the address and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched.
The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to Write Operation Status
on page 34 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately
terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read
mode, to ensure data integrity. Note that the Sec ured Silicon Region, autoselect, and CF I functions are unavailable when a program
operation is in progress.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.”
Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was
successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.”
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10.5.1 Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command
sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle
containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program
command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass
program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same
manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in
faster total programming time. Table 13 on page 33 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock
bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. (Table 13 on page 33).
The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin,
the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program
command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC
pin must not be at VHH for any operation other than accelerated programming, or device damage may result. In addition, the WP#/
ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
Figure 10.1 illustrates the algorithm for the program operation. Refer to Erase and Program Operations on page 47 for parameters,
and Figure 17.5 on page 48 for timing diagrams.
Figure 10.1 Program Operation
Note:
See Table 13 on page 33 for program command sequence.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data? No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
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10.6 Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a
set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the
Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these operations. Table 13 on page 33 shows the address and data requirements
for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The
system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to Write Operation Status
on page 34 for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates
the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading
array data, to ensure data integrity. Note that the Secured Silicon Region, autoselect, and CFI functions are unavailable when an
erase operation is in progress.
Figure 10.2 on page 31 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations on page 47 for
parameters, and Figure 17.7 on page 49 for timing diagrams.
10.7 Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by
a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 13 on page 33 shows the address and data requirements for the sector erase command
sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and
verifies the entire sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector
addresses and sector erase commands may be written. However, these additional erase commands are only one bus cycle long
and should be identical to the sixth cycle of the standard erase command explained above. Loading the sector erase buffer may be
done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles
must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out
may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If any command other than 30h, B0h,
F0h is input during the time-out period, the normal operation will not be guaranteed. The system must rewrite the command
sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See DQ3: Sector Erase Timer on page 38.). The
time-out begins from the rising edge of the final WE# or CE# pulse (first rising edge) in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note
that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can
determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Write Operation
Status on page 34 for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However,
note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should
be reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured Silico n Region,
autoselect, and CFI functions are unavailable when an erase operation is in progress.
Figure 10.2 on page 31 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations on page 47 for
parameters, and Figure 17.7 on page 49 for timing diagrams.
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Figure 10.2 Erase Operation
Notes:
1. See Table 13 on page 33 for erase command sequenc e.
2. See DQ3: Sector Erase Timer on page 38 for information on the sector erase timer.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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10.8 Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program
data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only
during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. The bank address must
contain one of the sectors currently selected for erase.
When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 35 µs to
suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or
program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) It is not
recommended to program the Secured Silicon Region after an erase suspend, as proper device functionality cannot be guaranteed.
Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation Status
on page 34 for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation.
Refer to Write Operation Status on page 34 for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading
autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device
exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to
Autoselect Mode on page 17 and Autoselect Command Sequence on page 28 for details.
To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-
suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase
Suspend command can be written after the chip has resumed erasing.
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Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A20–A12 unique ly select any sector.
Refer to Table 3 on page 13 and Table 4 on page 15 for information on sector addresses .
BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. A20–A18 uniquely select a bank.
Notes:
1. See Table 1 on page 9 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth, fifth, and sixth cycle of the autoselect command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD .
5. Unless otherwise noted, address bits A20–A11 are don’t cares for unlock and command cycles, unless SA or PA is required.
6. No unlock or command cycles required when bank is reading array data.
7. The Reset command is required to return to the read mode (or to the erase-s us pend-read mode if previously in Erase Suspend) when a bank is in the autoselect
mode, or if DQ5 goes high (while the bank is providing status info rmation).
Table 13. S29JL032J Command Definitions
Command
Sequence
(Note 1)
Cycles
Bus Cycles (Notes 2–5)
First Second Third Fourth Fifth Sixth
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read (Note 6) 1RA RD
Reset (Note 7) 1XXX F0
Autoselect (Note 8)
Manufacturer ID Word 4555 AA 2AA 55 (BA)555 90 (BA)X00 01
Byte AAA 555 (BA)AAA
Device ID (Note 9)
Word
6
555
AA
2AA
55
(BA)555
90
(BA)X01 See
Table
5
(BA)X0E See
Table
5
(BA)X0F See
Table
5
Byte AAA 555 (BA)AAA (BA)X02 (BA)X1C (BA)X1E
Secured Silicon Region
Factory Protect (Note 10)
Word 4555 AA 2AA 55 (BA)555 90 (BA)X03 82/02
Byte AAA 555 (BA)AAA (BA)X06
Boot Sector/Sector Block
Protect Verify (Note 11)
Word 4555 AA 2AA 55 (BA)555 90 (SA)X02 00/01
Byte AAA 555 (BA)AAA (SA)X04
Enter Secured Silicon Region Word 3555 AA 2AA 55 555 88
Byte AAA 555 AAA
Exit Secured Silicon Region Word 4555 AA 2AA 55 555 90 XXX 00
Byte AAA 555 AAA
Program Word 4555 AA 2AA 55 555 A0 PA PD
Byte AAA 555 AAA
Unlock Bypass Word 3555 AA 2AA 55 555 20
Byte AAA 555 AAA
Unlock Bypass Program (Note 12) 2 XXX A0 PA PD
Unlock Bypass Reset (Note 13) 2 XXX 90 XXX 00
Chip Erase Word 6555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Byte AAA 555 AAA AAA 555 AAA
Sector Erase (Note 17) Word 6555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30
Byte AAA 555 AAA AAA 555
Erase Suspend (Note 14) 1BA B0
Erase Resume (Note 15) 1BA 30
CFI Query (Note 16) Word 155 98
Byte AA
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8. The fourth cycle of the autoselect command se quence is a read cyc le. The system must prov ide the bank address to o btain the m anufacturer ID, device ID , or Secured
Silicon Region factory protect information. Data bits DQ15–DQ8 are don’t care. While reading the autoselect addresses, the bank address must be the same until a
reset command is given. See Autoselect Command Sequence on page 28 for more information.
9. For models 01, 02, the device ID must be read across the fourth, fifth, and sixth cycles.
10.The data is 82h for factory locked , 42h for customer locked, and 02h for not factory/customer locked.
11. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block.
12.The Unlock Bypass command is required prior to the Unlock Bypass Program command.
13.The Unlock Bypass Reset command is required to return to the read mode when the bank is in the unlock bypass mode.
14.The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid
only during a sector erase operatio n, and requires the bank address.
15.The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address.
16.Command is valid when device is ready to read array data or when device is in autoselect mode.
17.Additional sector erase commands during the time-out period after an initial sector erase are one cycle long and identical to the sixth cycle of
the sector erase command sequence (SA / 30).
11. W rite Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 14
on page 38 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining
whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/
BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed.
11.1 DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or
completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command
sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7
status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs
the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program
address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the read
mode.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or
if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any
of the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for
approximately 3 ms, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an
address within a protected sector, the status may not be valid.
When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ15–DQ0 (or DQ7–DQ0
for x8-only device) on the following read cycles. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may
change asynchronously with DQ15–DQ8 (DQ7–DQ0 for x8-only device) while Output Enable (OE#) is asserted low. That is, the
device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7
output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid
data, the data outputs on DQ15–DQ0 may be still invalid. Valid data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) will appear on
successive read cycles.
Table 14 on page 38 shows the outputs for Data# Polling on DQ7. Figure 11.1 on page 35 shows the Data# Polling algorithm.
Figure 17.9 on page 50 shows the Data# Polling timing diagram.
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Figure 11.1 Data# Polling Algorithm
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector addr ess within the s ector being erased. During chip erase, a valid
address is any non-protected sect or address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
11.2 RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The
RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output,
several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.)
If the output is high (Ready), the device is in the read mode, the standby mode, or one of the banks is in the erase-suspend-read
mode.
Table 14 on page 38 shows the outputs for RY/BY#.
When DQ5 is set to “1”, RY/BY# will be in the BUSY state, or “0”.
11.3 DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device
has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE#
pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out.
$1åå$ATA 9E S
.O
.O
$1åå
.O
9E S
9E S
&!), 0!33
2EADå$1n$1
!DDRåå6!
2EADå$1n$1
!DDRåå6!
$1åå$ATA
34!24
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During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The
system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 3 ms,
then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the
device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-
suspended. Alternatively, the system can use DQ7 (see DQ7: Data# Polling on page 34).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is
written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete.
Figure 11.2 Toggle Bit Algorithm
Note:
The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
START
No
Yes
Yes
DQ5 = 1?
No
Yes
Toggle Bit
= Toggle?
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Toggle Bit
= Toggle?
Read Byte Twice
(DQ7–DQ0)
Address = VA
Read Byte
(DQ7–DQ0)
Address =VA
Read Byte
(DQ7–DQ0)
Address =VA
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11.4 DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded
Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE#
pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use
either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-
suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 14
on page 38 to compare outputs for DQ2 and DQ6.
Figure 11.2 on page 36 shows the toggle bit algorithm in flowchart form, and DQ2: Toggle Bit II on page 37 explains the algorithm.
See also DQ6: Toggle Bit I on page 35. Figure 17.10 on page 50 shows the toggle bit timing diagram. Figure 17.11 on page 51
shows the differences between DQ2 and DQ6 in graphical form.
11.5 Reading Toggle Bits DQ6/DQ2
Refer to Figure 11.2 on page 36 for the following discussion. Whenever the system initially begins reading toggle bit status, it must
read DQ15–DQ0 (or DQ7–DQ0 for x8-only device) at least twice in a row to determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new
value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The
system can read array data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note
whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has
successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully,
and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system
may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the operation (top of Figure 11.2 on page 36).
11.6 DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5
produces a “1,” indicating that the program or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only
an erase operation can cha nge a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.” The
RDY/BSY# pin will be in the BUSY state under this condition.
Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read
mode if a bank was previously in the erase-suspend-program mode).
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11.7 DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The
sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also
applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the
time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not
monitor DQ3. See also Sector Erase Command Sequence on page 30.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure
that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun;
all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept
additional sector erase commands. To ensure the command has been accepted, the system software should check the status of
DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command
might not have been accepted.
Table 14 shows the status of DQ3 relative to the other status bits.
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the sectio n on DQ5 for more
information.
2. DQ7 and DQ2 require a valid address when re ading status information. Refer to the appropriate subsection for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress . The device outputs array
data if the system addresses a non-busy bank.
Table 14. Write Operation Status
Status DQ7
(Note 2) DQ6 DQ5
(Note 1) DQ3 DQ2
(Note 2) RY/BY#
Standard
Mode
Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0
Embedded Erase
Algorithm
In busy erasing
sector 0 Toggle 0 1 Toggle 0
In not busy erasing
sector 0 Toggle 0 1 No toggle 0
Erase
Suspend
Mode
Erase-Suspend-
Read
Erase
Suspended Sector 1 No toggle 0 N/A Toggle 1
Non-Erase
Suspended Sector Data Data Data Data Data 1
Erase-Suspend-Program DQ7# Toggle 0 N/A N/A 0
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12. Absolute Maximum Ratings
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0V for periods of up to 20 ns. Maximum DC
voltage on input or I/O pins is V CC +0.5V. See Figure 12.1 on page 39. During voltage transitions , input or I/O pins may overshoot to VCC +2.0V for periods up to 20 ns.
See Figure 12.2 on page 39.
2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is –0.5V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to –
2.0V for periods of up to 20 ns. See Figure 12.1 on page 39. Maximum DC input voltage on pin A9 is +12.5V which may overshoot to +14.0V for periods up to 20 ns.
Maximum DC input voltage on WP#/ACC is +9.5V which may overshoot to +12.0V for periods up to 20 ns.
3. No more than one output may be sh orted to ground at a time. Duration of the short circuit should not be greater than one seco nd.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above tho se indicated in the operational s ections of this data sh eet is not implied. Expos ure of the device to absolute maximum
rating conditions for extended periods may affect device reliability.
Figure 12.1 Maximum Negative Overshoot Waveform
Figure 12.2 Maximum Positive Overshoot Waveform
Storage Temperature, Plastic Packages –65°C to +150°C
Ambient Temperature with Power Applied –65°C to +125°C
Voltage with Respect to Ground, VCC (Note 1) –0.5V to +4.0V
A9 and RESET# (Note 2) –0.5V to +12.5V
WP#/ACC –0.5V to +9.5V
All other pins (Note 1) –0.5V to VCC +0.5V
Output Short Circuit Current (Note 3) 200 mA
20 ns
20 ns
+0.8V
–0.5V
20 ns
–2.0V
20 ns
20 ns
V
CC
+2.0V
V
CC
+0.5V
20 ns
2.0V
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13. Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) –40°C to +85°C
VCC Supply Voltages
VCC for standard voltage range 2.7V to 3.6V
Operating ranges define those limits between which the functionality of the device is guaranteed.
14. DC Characteristics
14.1 CMOS Compatible
Notes:
1. The ICC current listed is ty pically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
Parameter
Symbol Parameter Description Test Conditions Min Typ Max Unit
ILI Input Load Current VIN = VSS to VCC,
VCC = VCC max
1.0 µA
ILIT A9 and RESET# Input Load Current VCC = VCC max, OE# = VIH;
A9 or RESET# = 12.5V 35 µA
ILO Output Leakage Current VOUT = VSS to VCC,
VCC = VCC max, OE# = VIH
1.0 µA
ILR Reset Leakage Current VCC = VCC max; RESET# = 12.5V 35 µA
ICC1
VCC Active Read Current
(Notes 1, 2)
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz 10 16
mA
1MHz 2 4
CE# = VIL, OE# = VIH,
Word Mode
5 MHz 10 16
1MHz 2 4
ICC2 VCC Active Write Current (Notes 2, 3)CE# = V
IL, OE# = VIH, WE# = VIL 15 30 mA
ICC3 VCC Standby Current (Note 2) CE#, RESET# = VCC 0.3V 0.2 5 µA
ICC4 VCC Reset Current (Note 2) RESET# = VSS 0.3V 0.2 5 µA
ICC5 Automatic Sleep Mode (Notes 2, 4)VIH = VCC 0.3V;
VIL = VSS 0.3V 0.2 5 µA
ICC6
VCC Active Read-While-Program Current
(Note 2)
CE# = VIL, OE# = VIH,
1MHz
Byte 21 45 mA
Word 21 45
ICC7
VCC Active Read-While-Erase Current
(Note 2)
CE# = VIL, OE# = VIH,
1MHz
Byte 21 45 mA
Word 21 45
ICC8
VCC Active Program-While-Erase-
Suspended Current (Notes 2, 5)CE# = VIL, OE# = VIH 17 35 mA
VIL Input Low Voltage –0.5 0.8 V
VIH Input High Voltage 0.7 x VCC VCC + 0.3 V
VHH
Voltage for WP#/ACC Sector Protect/
Unprotect and Program Acceleration VCC = 3.0V ± 10% 8.5 9.5 V
VID
Voltage for Autoselect and Temporary Sector
Unprotect VCC = 3.0V 10% 8.5 12.5 V
VOL Output Low Voltage IOL = 2.0 mA, VCC = VCC min 0.45 V
VOH1 Output High Voltage IOH = –2.0 mA, VCC = VCC min 0.85 x VCC V
VOH2 IOH = –100 µA, VCC = VCC min V
CC–0.4
VLKO Low VCC Lock-Out Voltage (Note 5) 1.8 2.0 2.5 V
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4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA.
5. Not 100% tested.
14.2 Zero-Power Flash
Figure 14.1 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
Note:
Addresses are switching at 1 MHz
25
20
15
10
5
00 500 1000 1500 2000 2500 3000 3500 4000
Supply Current in mA
Time in ns
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Figure 14.2 Typical ICC1 vs. Frequency
Note:
T = 25°C
10
8
2
0
1 2345
Frequenc y i n M Hz
Supply Current in mA
2.7V
3.6V
4
6
12
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15. Test Conditions
Figure 15.1 Test Setup
Note:
Diodes are IN3064 or equivalent.
Note:
1. Input rise and fall times are 0-100%.
16. Key To Switching Waveforms
Figure 16.1 Input Waveforms and Measurement Levels
Table 15. Test Specifications
Test Condition 60 70 Unit
Output Load Capacitance, CL30 100 pF
Input Rise and Fall Times (1) 5ns
Input Pulse Levels 0.0 or Vcc V
Input timing measurement reference levels 0.5 Vcc V
Output timing measurement reference levels 0.5 Vcc V
Waveform Inputs Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted Changing, State Unknown
Does Not Apply Center Line is High Impedance State (High-Z)
CL
Device
Under
Te s t
Vcc
0.0 V 0.5 Vcc 0.5 Vcc OutputMeasurement LevelInput
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17. AC Characteristics
17.1 Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 15.1 on page 43 and Table 15 on page 43 for test specifications
3. Measurements performed by placing a 50 ohm termination on the data pin with a b ias of VCC/2. The time from OE# high to the data bus driven to VCC/2 is taken as tDF.
Figure 17.1 Read Operation Timings
Parameter
Description Test Setup
Speed Options
JEDEC Std. 60 70 Unit
tAVAV tRC Read Cycle Time (Note 1) Min 60 70 ns
tAVQV tACC Address to Output Delay CE#,
OE# = VIL
Max 60 70 ns
tELQV tCE Chip Enable to Output Delay OE# = VIL Max 60 70 ns
tGLQV tOE Output Enable to Output Delay Max 25 30 ns
tEHQZ tDF Chip Enable to Output High-Z (Notes 1, 3) Max 16 ns
tGHQZ tDF Output Enable to Output High-Z (Notes 1, 3) Max 16 ns
tAXQX tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First Min 0 ns
tOEH
Output Enable Hold Time
(Note 1)
Read Min 0 ns
Toggle and
Data# Polling Min 5 10 ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH-Z
Output Valid
HIGH-Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
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17.2 Hardware Reset (RESET#)
Note:
Not 100% tested.
Figure 17.2 Reset Timings
Parameter
Description All Speed Options UnitJEDEC Std
tReady
RESET# Pin Low (During Embedded Algorithms) to Read Mode
(See Note) Max 35 µs
tReady
RESET# Pin Low (NOT During Embedded Algorithms) to Read
Mode (See Note) Max 500 ns
tRP RESET# Pulse Width Min 500 ns
tRH Reset High Time Before Read (See Note) Min 50 ns
tRPD RESET# Low to Standby Mode Min 35 µs
tRB RY/BY# Recovery Time Min 0 ns
RESET#
RY/BY#
RY/BY#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
tReady
CE#, OE#
tRH
CE#, OE#
Reset Timings during Embedded Algorithms
RESET#
tRP
tRB
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17.3 W ord/Byte Configuration (BYTE#)
Figure 17.3 BYTE# Timings for Read Operations
Parameter Speed Options
JEDEC Std. Description 60 70 Unit
tELFL/tELFH CE# to BYTE# Switching Low or High Max 5 ns
tFLQZ BYTE# Switching Low to Output HIGH-Z Max 16 ns
tFHQV BYTE# Switching High to Output Active Max 60 70 ns
DQ15
Output
Data Output
(DQ7–DQ0)
CE#
OE#
BYTE#
tELFL
DQ14–DQ0 Data Output
(DQ14–DQ0)
DQ15/A-1 Address
Input
tFLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ7–DQ0)
BYTE#
tELFH
DQ14–DQ0 Data Output
(DQ14–DQ0)
DQ15/A-1 Address
Input
tFHQV
BYTE#
Switching
from byte to
word mode
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Figure 17.4 BYTE# Timings for Write Operations
Note:
Refer to the table in Erase and Program Operations on page 47 for tAS and tAH specifications.
17.4 Erase and Program Operations
Notes:
1. Not 100% tested.
2. See Data Integrity on page 54 for more information.
Parameter
Description
Speed Options
JEDEC Std 60 70 Unit
tAVAV tWC Write Cycle Time (Note 1) Min 60 70 ns
tAVWL tAS Address Setup Time Min 0 ns
tASO Address Setup Time to OE# low during toggle bit polling Min 12 ns
tWLAX tAH Address Hold Time Min 35 35 ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling Min 0 ns
tDVWH tDS Data Setup Time Min 35 40 ns
tWHDX tDH Data Hold Time Min 0 ns
tOEPH Output Enable High during toggle bit polling Min 20 ns
tGHWL tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low) Min 0 ns
tELWL tCS CE# Setup Time Min 0 ns
tWHEH tCH CE# Hold Time Min 0 ns
tWLWH tWP Write Pulse Width Min 25 30 ns
tWHDL tWPH Write Pulse Width High Min 25 30 ns
tSR/W Latency Between Read and Write Operations Min 0 ns
tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 6 µs
Word Typ 6
tWHWH1 tWHWH1
Accelerated Programming Operation,
Byte or Word (Note 2) Typ 4 µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec
tVCS VCC Setup Time (Note 1) Min 50 µs
tRB Write Recovery Time from RY/BY# Min 0 ns
tBUSY Program/Erase Valid to RY/BY# Delay Max 90 ns
tESL Erase Suspend Latency Max 35 µs
CE#
WE#
BYTE#
The falling edge of the last WE# signal
tHOLD (tAH)
tSET
(tAS)
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Figure 17.5 Program Operation Timings
Notes:
1. PA = progr am addres s, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.6 Accelerated Program Timing Diagram
OE#
WE#
CE#
V
CC
Data
Addresses
t
DS
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
AS
t
WPH
t
VCS
555h PA PA
Read Status Data (last two cycles)
A0h
t
CS
Status D
OUT
Program Command Sequence (last two cycles)
RY/BY#
t
RB
t
BUSY
t
CH
PA
WP#/ACC tVHH
VHH
V
IL
or V
IH
V
IL
or V
IH
tVHH
Document Number: 002-00857 Rev. *G Page 49 of 61
S29JL032J
Figure 17.7 Chip/Sector Erase Operation Timings
Notes:
1. SA = sector ad dress (fo r Sector Eras e), VA = V alid Address for reading status data (see Write Operation Status on page 34).
2. These waveforms are for the word mode.
Figure 17.8 Back-to-back Read/Write Cycle Timings
OE#
CE#
Addresses
VCC
WE#
Data
2AAh SA
tAH
tWP
tWC tAS
tWPH
555h for chip erase
10 for Chip Erase
30h
tDS
tVCS
tCS
tDH
55h
tCH
In
Progress Complete
tWHWH2
VA
VA
Erase Command Sequence (last two cycles) Read Status Data
RY/BY#
tRB
tBUSY
OE#
CE#
WE#
Addresses
tOH
Data Valid
In Valid
In
Valid PA Valid RA
tWC
tWPH
tAH
tWP
tDS tDH
tRC
tCE
Valid
Out
tOE
tACC
tOEH tGHWL
tDF
Valid
In
CE# or CE2# Controlled Write CyclesWE# Controlled Write Cycle
Valid PA Valid PA
tCP
tCPH
tWC tWC
Read Cycle
tSR/W
Document Number: 002-00857 Rev. *G Page 50 of 61
S29JL032J
Figure 17.9 Data# Polling Timings (During Embedded Algorithms)
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and arr ay data read cycle.
Figure 17.10 Toggle Bit Timings (During Embedded Algorithms)
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle.
WE#
CE#
OE
High-Z
t
OE
High-Z
DQ7
DQ0–DQ6
RY/BY#
t
BUSY
Compleme Tru
Addresses VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA VA
Status
Complement
Status Tru
Valid Data
Valid Data
t
ACC
t
RC
OE#
CE#
WE#
Addresses
tOEH
tDH
tAHT
tASO
tOEPH
tOE
Valid Data
(first read) (second read) (stops toggling)
tCPH
tAHT
tAS
DQ6/DQ2 Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Document Number: 002-00857 Rev. *G Page 51 of 61
S29JL032J
Figure 17.11 DQ2 vs. DQ6
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6.
17.5 Temporary Sector Unprotect
Note:
Not 100% tested.
Figure 17.12 Temporary Sector Unprotect Timing Diagram
Parameter
Description All Speed OptionsJEDEC Std Unit
tVIDR VID Rise and Fall Time (See Note) Min 500 ns
tVHH VHH Rise and Fall Time (See Note) Min 250 ns
tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 µs
tRRB
RESET# Hold Time from RY/BY# High for Temporary
Sector Unprotect Min 4 µs
Enter
Erase
Erase
Erase
Enter Erase
Suspend Program
Erase Suspend
Read Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Suspend
Program
Resume
Embedded
Erasing
RESET#
t
VIDR
V
ID
VSS, VIL,
or VIH
VID
VSS, VIL,
or VIH
CE#
WE#
RY/BY#
t
VIDR
tRSP
Program or Erase Command Sequence
t
RRB
Document Number: 002-00857 Rev. *G Page 52 of 61
S29JL032J
Figure 17.13 Sector/Sector Block Protect and Unprotect Timing Diagram
Note:
*For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0
17.6 Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See Data Integrity on page 54 for more information.
Parameter Speed Options
JEDEC Std. Description 60 70 Unit
tAVAV tWC Write Cycle Time (Note 1) Min 60 70 ns
tAVWL tAS Address Setup Time Min 0 ns
tELAX tAH Address Hold Time Min 35 35 ns
tDVEH tDS Data Setup Time Min 30 30 ns
tEHDX tDH Data Hold Time Min 0 ns
tGHEL tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low) Min 0 ns
tWLEL tWS WE# Setup Time Min 0 ns
tEHWH tWH WE# Hold Time Min 0 ns
tELEH tCP CE# Pulse Width Min 25 35 ns
tEHEL tCPH CE# Pulse Width High Min 25 30 ns
tWHWH1 tWHWH1
Programming Operation
(Note 2)
Byte Typ 6 µs
Word Typ 6
tWHWH1 tWHWH1
Accelerated Programming Operation,
Byte or Word (Note 2) Typ 4 µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec
Sector Group Protect: 150 µs
Sector Group Unprotect: 15 ms
1 µs
RESET#
SA, A6,
A1, A0
Data
CE#
WE#
OE#
60h 60h 40h
Valid* Valid* Valid*
Status
Sector Group Protect/Unprotect Verify
V
ID
V
IH
Document Number: 002-00857 Rev. *G Page 53 of 61
S29JL032J
Figure 17.14 Alternate CE# Controlled Write (Erase/Program) Operation Timings
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7# D
OUT
tWC tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase PA for program
SA for sector erase
555 for chip erase
tBUSY
Document Number: 002-00857 Rev. *G Page 54 of 61
S29JL032J
18. Data Integrity
18.1 Erase Endurance
Note:
1. Each write command to a non-volatile register causes a PE cycle on the entire non-v olatile register ar ray.
18.2 Data Retention
Contact Cypress Sales and FAE for further information on the data integrity. An application note is available at: http://
www.cypress.com/appnotes.
Table 16. Erase Endurance
Parameter Minimum Unit
Program/Erase cycles per main Flash array sectors 100K PE cycle
Program/Erase cycles per PPB array or non-volatile register array (1) 100K PE cycle
Table 17. Data Retention
Parameter Test Conditions Minimum Time Unit
Data Retention Time 10K Program/Erase Cycles 20 Years
100K Program/Erase Cycles 2 Years
Document Number: 002-00857 Rev. *G Page 55 of 61
S29JL032J
19. Erase and Programming Performance
Notes:
1. Ty pical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 100,000 cycles; chec kerboard data pattern.
2. Under worst case conditions of 90°C, VCC = 2.7V, 1,000,000 cycles.
3. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
4. System-level overhead is the time requir ed to execute the two- o r four -bus-cyc le sequenc e for the program c ommand. See Table 13 on page 33 for further information
on command definitions.
5. The device has a minimum program and erase cycle endu ranc e of 100,000 cycles per sector.
20. Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter Typ (Note 1) Max (Note 2) Unit Comments
Sector Erase Time 0.5 5 sec Excludes 00h programming
prior to erasure (Note 3)
Chip Erase Time 39 sec
Byte Program Time 6 80 µs
Excludes system level
overhead (Note 4)
Word Program Time 6 80 µs
Accelerated Byte/Word Program Time 4 70 µs
Parameter Symbol Parameter Description Test Setup Max Unit
CIN Input Capacitance (applies to A20-A0, DQ15-DQ0) VIN = 0 8.5 pF
COUT Output Capacitance (applies to DQ15-DQ0, RY/BY#) VOUT = 0 5.5 pF
CIN2
Control Pin Capacitance
(applies to CE#, WE#, OE#, WP#/ACC, RESET#, BYTE#) VIN = 0 12 pF
Document Number: 002-00857 Rev. *G Page 56 of 61
S29JL032J
21. Physical Dimensions
21.1 TS 048—48-Pin Standard TSOP
3664 \ f16-038.10 \ 11.6.7
PACKAGE TS/TSR 48
JEDEC MO-142 (D) DD
SYMBOL MIN NOM MAX
A --- --- 1.20
A1 0.05 --- 0.15
A2 0.95 1.00 1.05
b1 0.17 0.20 0.23
b 0.17 0.22 0.27
c1 0.10 --- 0.16
c 0.10 --- 0.21
D 19.80 20.00 20.20
D1 18.30 18.40 18.50
E 11.90 12.00 12.10
e 0.50 BASIC
L 0.50 0.60 0.70
Θ0˚ --- 8
R 0.08 --- 0.20
N48
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORM TO ANSI Y14.5M-1982)
2. PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
3. PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN): INK OR LASER MARK.
4. TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS
ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
5. DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD
PROTUSION IS 0.15mm (.0059") PER SIDE.
6. DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR
PROTUSION SHALL BE 0.08mm (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX.
MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT
LEAD TO BE 0.07mm (0.0028").
7. THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10mm (.0039") AND 0.25mm (0.0098") FROM THE LEAD TIP.
8. LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM
THE SEATING PLANE.
9. DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
Document Number: 002-00857 Rev. *G Page 57 of 61
S29JL032J
21.2 VBK048—48-Pin FBGA
g1001.2 \ f16-038.25 \ 07.13.10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE VBK 048
JEDEC N/A
8.15 mm x 6.15 mm NOM
PACKAGE
SYMBOL MIN NOM MAX NOTE
A --- --- 1.00 OVERALL THICKNESS
A1 0.18 --- --- BALL HEIGHT
D 8.15 BSC. BODY SIZE
E 6.15 BSC. BODY SIZE
D1 5.60 BSC. BALL FOOTPRINT
E1 4.00 BSC. BALL FOOTPRINT
MD 8 ROW MATRIX SIZE D DIRECTION
ME 6 ROW MATRIX SIZE E DIRECTION
N 48 TOTAL BALL COUNT
φb 0.33 --- 0.43 BALL DIAMETER
e 0.80 BSC. BALL PITCH
SD / SE 0.40 BSC. SOLDER BALL PLACEMENT
--- DEPOPULATED SOLDER BALLS
Document Number: 002-00857 Rev. *G Page 58 of 61
S29JL032J
22. Document History
Document Title:S29JL032J 32 Mbit (4M x 8-Bit/2M x 16-Bit), 3 V, Simultaneous Read/Write Flash
Document Number: 002-00857
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
** - RYSU 01/27/2010 Spansi on Publication Number: S29JL032J_00
Initial release
*A - RYSU 06/15/2010 Global
Changed all references to typical Sector Erase time from 0.4 sec to 0.5
sec.
Changed all references to “Secured Silicon Sector” to “Secured Silicon
Region”.
Corrected spelling and grammatical errors.
Product Selector Guide Corrected Standard Voltage Range of 70 ns
option from 3.0-3.6V to 2.7-3.6V.
Connection Diagrams Added 48-ball FBGA connection diagram.
Pin Description
Changes “21 Addresses” to “21 Address Pins”.
Added clarification that CE#, OE#, WE#, BYTE#, and RY/BY# are Active
Low.
Ordering Information
Added FBGA ordering option.
Added Low-halogen, Pb-free ordering option.
Added valid combinations for FBGA.
Word/Byte Configuration Added clarification that BYTE# must be
connected to either the system VCC or ground.
Secured Silicon Region
Added clarification that D7 is the Secured Silicon Factory Indicator Bit.
In Figure Secured Silicon Sector Protect Verify, corrected “Write reset
command” to “Secured Silicon Region exit command”.
Command Definitions
Corrected “Writing specific addresses and data commands or sequences”
to “Writing specific
addresses and data sequences”.
Absolute Maximum Ratings Corrected “A9, OE#, and RESET#” to “A9
and RESET#”.
DC Characteristics
Removed OE# from ILIT parameter description.
Removed OE# = 12.5V from ILIT test conditions.
Added 1 MHz to ICC6 and ICC7 test conditions.
Removed Note 1 from ICC6 and ICC7.
Test Conditions
Update Figure “Test Setup” to reflect correct test setup.
Added Note 1 to clarify that input rise and fall times are 0-100%.
Erase and Programming Performance
Changed Chip Erase typical time from 28 sec to 39 sec.
Removed Note 5.
Physical Dimensions Added VBK048 package outline drawing.
Document Number: 002-00857 Rev. *G Page 59 of 61
S29JL032J
*B - RYSU 08/25/2010 Global
Updated the data sheet designation from Advanced Information to
Preliminary.
Corrected spelling, capitalization, and grammatical errors.
Simultaneous Read/Write Operatio ns with Zero Latency
Clarified that JL032J can be configured as either a top or bottom boot
sector device, not both.
Ordering Information
Corrected typo in valid combinations table from “…, 41, 41” to “…, 41, 42”.
Clarified that Note 1 applies to the Packing Type column.
RESET#: Hardware Reset Pin
Changed “Refer to AC Characteristics on page 48” to “Refer to Hardware
Reset (RESET#) on page 49”.
Secure d Silicon Region
Clarified the Secured Silicon Indicator Bit data based on factory and
customer lock status.
Removed forward looking statements regarding factory locking features as
they are supported in this device.
Common Flash Memory Interface (CFI)
Clarified that once in the CFI query mode, the system must write the reset
command to return to
reading array data.
Erase Suspend/Erase Resume Commands
Added clarification that “It is not recommended to program the Secured
Silicon Region after an
erase suspend, as proper device functionality cannot be guaranteed.”
Erase and Programming Performan ce Added Note 5 regarding minimum
program and erase cycle endurance.
Pin Capacitance
Changed section title from "TSOP Pin Capacitance" to "Pin Capacitance".
Updated values to reflect maximum capacitances for both TSOP and BGA.
Removed typical capacitance values.
Added specific pin clarifications to parameter descriptions.
Physical Dimensions Updated the VBK048 package outline drawing.
Document Title:S29JL032J 32 Mbit (4M x 8-Bit/2M x 16-Bit), 3 V, Simultaneous Read/Write Flash
Document Number: 002-00857
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
Document Number: 002-00857 Rev. *G Page 60 of 61
S29JL032J
*C - RYSU 04/07/2011 Global
Updated the data sheet designation from Preliminary to Full Production (no
designation on document).
Distinctive Characteristics
Corrected "Top and bottom boot sectors in the same device" to "Top and
bottom boot sector configurations available".
RESET#: Hardware Reset Pin
Added warning that keeping CE# at VIL from power up through the first
reset could cause erroneuous data on the first read.
Reset Command
Clarified that during an embedded program or erase, if DQ5 goes high then
RY/BY# will remain low until a reset is issued.
Hardware Reset (RESET#)
Added note to the “Reset Timings” figure clarifying that CE# should only go
low after RESET# has
gone high.
*D - RYSU 08/24/2011 RESET#: Hardware Reset Pin
Removed warning that keeping CE# at VIL from power up through the first
reset could cause erroneuous data on the first read.
Command Definitions Table Added Note 17 to clarify additional sector
erase commands during time-out period.
Sector Erase Command Sequence Added clarification regarding
additional sector erase commands during time-out period.
Hardware Reset (RESET#)
Removed note to the “Reset Timings” figure clarifying that CE# should only
go low after RESET#
has gone high.
Physical Dimensions Package drawings updated to latest version.
*E - RYSU 12/16/2011 Global Corrected all references in the text to the sector erase time-out
period from 80 μs to 50 μs.
Word/Byte Configuration
Removed the statement “Please note that the BYTE# pin must be
connected to either the system
VCC or ground.”
*F 5034593 RYSU 12/08/2015 Updated to Cypress template.
*G 5742461 AESATMP7/
SZZX
05/19/2017 Updated Cypress Logo and Copyright.
Updated cycling endurance and added Data Integrity section.
Corrected typo in the sector address table (SA54 and SA55).
Document Title:S29JL032J 32 Mbit (4M x 8-Bit/2M x 16-Bit), 3 V, Simultaneous Read/Write Flash
Document Number: 002-00857
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
Document Number: 002-00857 Rev. *G Revised May 19, 2017 Page 61 of 61
© Cypress Semiconductor Corporation, 2010-2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
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TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
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permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any liability arising out of the application or use of any
product or circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is
the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. Cypress products
are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or
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Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
S29JL032J
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