HMC-ALH508 v02.0209 Amplifiers - low noise - Chip 1 GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz Typical Applications Features This HMC-ALH508 is ideal for: Noise Figure: <5 dB * Short Haul / High Capacity Links P1dB: +7 dBm * Wireless LANs Gain: 13 dB * Automotive Radar Supply Voltage: +2.4V * Military & Space 50 Ohm Matched Input/Output * E-Band Communication Systems Die Size: 3.2 x 1.6 x 0.1 mm Functional Diagram General Description The HMC-ALH508 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH508 features 13 dB of small signal gain, 4.5 dB of noise figure and an output power of +7 dBm at 1dB compression from two supply voltages at 2.1V and 2.4V respectively. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications [1], TA = +25 C Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA [2] Parameter Min. Frequency Range Gain Noise Figure 11 Typ. Max. Units 71 - 86 GHz 13 dB 4.5 dB Input Return Loss 8 dB Output Return Loss 10 dB Output Power for 1 dB Compression (P1dB) 7 dBm Total Supply Current (Idd1+Idd2+Idd3) 30 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve Iddtotal = 30 mA 1-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH508 v02.0209 GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz 18 8 16 7 NOISE FIGURE (dB) 14 GAIN (dB) 12 10 8 6 4 6 5 4 3 2 1 2 0 0 70 72 74 76 78 80 82 84 86 88 90 74 76 78 80 82 84 86 88 90 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 0 -2 -2 -4 -4 RETURN LOSS (dB) RETURN LOSS (dB) 1 Noise Figure vs. Frequency -6 -8 -10 -12 -14 -6 -8 -10 -12 -14 -16 -16 -18 -18 -20 Amplifiers - low noise - Chip Linear Gain vs. Frequency -20 70 72 74 76 78 80 82 FREQUENCY (GHz) 84 86 88 90 70 72 74 76 78 80 82 84 86 88 90 FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 1-2 HMC-ALH508 v02.0209 Amplifiers - low noise - Chip 1 Absolute Maximum Ratings Drain Bias Voltage +3 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input Power -5 dBm Thermal Resistance (channel to die bottom) 195.6 C/W Storage Temperature -65 to +150 C Operating Temperature -55 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1-3 GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH508 v02.0209 GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2-4 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. See assembly for required external components. 5 RFOUT This pad is AC coupled and matched to 50 Ohms. 6-8 Vgg1, Vgg2, Vgg3 Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components. Die bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com Amplifiers - low noise - Chip 1 Pad Descriptions 1-4 HMC-ALH508 v02.0209 Assembly Diagram Amplifiers - low noise - Chip 1 GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz 1-5 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or apps@hittite.com HMC-ALH508 GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.150mm (0.005") Thick Moly Tab Amplifiers - low noise - Chip v02.0209 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or apps@hittite.com 1-6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Analog Devices Inc.: HMC-ALH508 HMC-ALH508-SX