2KBP04M - FAIRCHILD SEMICONDUCTOR

2KBP005M/3N253 - 2KBP10M/3N259 — Bridge Rectifiers

2KBP005M/3N253 - 2KBP10M/3N259 Rev. E2 1

November 2010

2KBP005M/3N253 - 2KBP10M/3N259

Bridge Rectifiers

Features

• Surge overload rating: 60 amperes peak.

• Reliable low cost construction utilizing molded plastic technique.

• UL certified, UL #E111753.

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on PCB with 0.47 × 0.47” (12 × 12mm).

Symbol Parameter Value Units005M 01M 02M 04M 06M 08M 10M

253 254 255 256 257 258 259

VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V

VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V

VRDC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V

IF(AV) Average Recti fi e d Fo rw a r d C urr ent,

@ TA = 50°C2.0 A

IFSM Non-Repetitive Peak Forward Surge Current

8.3ms Single Half-Sine-Wave 60 A

TSTG Storage Temperature Range -55 to +150 °C

TJJunction Temperature -55 to +150 °C

Symbol Parameter Value Units

PDPower Dissipation 4.7 W

RθJA Thermal Resistance, Junction to Ambient, * per leg 18 °C/W

+ KBPM

* The nodules on the package may not be present on the actual parts.

2KBP005M/3N253 - 2KBP10M/3N259 — Bridge Rectifiers

2KBP005M/3N253 - 2KBP10M/3N259 Rev. E2 2

Electrical Characteristics Ta = 25°C unless otherwise noted

Typical Performance Characteristics

Symbol Parameter Value Units

VFForward Volt age, per element @ 3.14A 1.1 V

IRReverse Current, per element @ Rated VR TA = 25°C

TA = 125°C5.0

500 μA

μA

I2t Rating for Fusing t < 8.35ms 15 A2s

CTTotal Capacitance, per leg

VR = 4.0 V, f = 1.0 MHz 25 pF

Figure 1. Forward Curve Derating Curve Figure 2. Forward Voltage Characteristics

Figure 3. Reverse Current vs Reverse Voltage Figure 4. Non-Repeti tive Surge Current

0 255075100125150

0.0

0.5

1.0

1.5

2.0

2.5

Average Rectified Forward Current, IF(AV) [A ]

Ambient Temperature (oC)

0 0.2 0.4 0.6 0.8 1 1.2 1.4

0.01

0.1

Forward Voltage, VF [V]

Forward Current, IF [A]

MEDIAN

TYPICAL

DISTRIBUT ION

0 20406080100120140

0.1

100

Percent of Rated Peak Reverse Voltage [%]

Reverse Current, I

[mA]

T = 25 C

12 51020 50100

Number of Cycles at 60Hz

Peak Forward Surge Current, IFSM [A]

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®*

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As used herein:

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only. Rev. I50