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Junction Size: Square 180 mils
Wafer Size: 4"
VRRM Class: 1000 and 1200 V
Passivation Process: Glassivated MOAT
Reference IR Packaged Part: 20ETF Series
FAST RECOVERY DIODES
IR180LM..CS05CB SERIES
Major Ratings and Characteristics
Parameters Units Test Conditions
VFM Maximum Forward Voltage 1350 mV TJ = 25°C, IF = 20 A
VRRM Reverse Breakdown Voltage Range 1000 and 1200 V TJ = 25°C, IRRM = 100 µA (1)
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness 100% Al, (20 µm)
Chip Dimensions
180 x 180 mils (4.57x4.57 mm) - see drawing
Wafer Diameter 100 mm, with std. < 110 > flat
Wafer Thickness 260 µm
Maximum Width of Sawing Line 45 µm
Reject Ink Dot Size 0.25 mm diameter minimum
Ink Dot Location See drawing
Recommended Storage Environment Storage in original container, in dessicated
nitrogen, with no contamination
Bulletin I0125J 07/97
(1) Nitrogen flow on die edge.
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IR180LM..CS05CB Series
IR 180 L M 12 C S05 CB
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1- International Rectifier Device
2- Chip Dimension in Mils
3- Type of Device: L = Wire Bondable Fast Recovery Diode
4- Passivation Process: M = Glassivated MOAT
5- Voltage code: Code x 100 = VRRM
6- Metallization: C = Aluminium (Anode) - Silver (Cathode)
7- Fast Recovery Type: S05 = 500 nsec
8- CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
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Device Code
Ordering Information Table
567
Outline Table
All dimensions are in microns
Available Class
10 = 1000 V
12 = 1200 V
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Bulletin I0125J 07/97
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IR180LM..CS05CB Series
TOP VIEW
N° 293 Basic Cells
Wafer Layout
All dimensions are in millimeters
Bulletin I0125J 07/97
