To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
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April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
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2SD1133, 2SD1134
Silicon NPN Triple Diffused
ADE-208-905 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
123
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD1133 2SD1134 Unit
Collector to base voltage VCBO 70 70 V
Collector to emitter voltage VCEO 50 60 V
Emitter to base voltage VEBO 55V
Collector current IC44A
Collector peak current IC(peak) 88A
Collector power dissipation PC*140 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –45 to +150 –45 to +150 °C
Note: 1. Value at TC = 25°C.
2SD1133, 2SD1134
2
Electrical Characteristics (Ta = 25°C)
2SD1133 2SD1134
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage V(BR)CBO 70——70——V I
C = 10 µA, IE = 0
Collector to emitter
breakdown voltage V(BR)CEO 50——60——V I
C = 50 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 5 ——5 ——V I
E = 10 µA, IC = 0
Collector cutoff current ICBO ——1 ——1 µAV
CB = 50 V, IE = 0
DC current transfer ratio hFE1*160 — 320 60 — 320 VCE = 4V IC = 1 A*2
hFE2 35——35—— I
C = 0.1 A*2
Collector to emitter
saturation voltage VCE(sat) ——1——1VI
C = 2 A, IB = 0.2 A*2
Base to emitter voltage VBE ——1——1VV
CE = 4 V, IC = 1 A*2
Gain bandwidth product fT— 7 — — 7 — MHz VCE = 4 V, IC = 0.5 A*2
Notes: 1. The 2SD1133 and 2SD1134 are grouped by hFE1 as follows.
2. Pulse test.
BCD
60 to 120 100 to 200 160 to 320
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
2
5
1.0
0.5
Collector current IC (A)
0.2
0.1
0.05 215 5010 20 100
Collector to emitter voltage VCE (V)
ICmax(Continuous)
Area of Safe Operation
(TC = 25°C)
(20 V, 2 A)
(50 V, 0.24 A) (60 V, 0.15 A)
(10 V, 4 A)
DC Operation
2SD1133 2SD1134
2SD1133, 2SD1134
3
TC = 25°C
IB = 0
10 mA
20
30
40
50
60
70
80
90
5
4
3
2
1
02
Collector current IC (A)
4
Collector to emitter voltage VCE (V)
8610
Typical Output Characteristics
5
2
1.0
0.5
0.2
0.1
0.05
0.02
0.010 0.6 1.00.2 0.8 1.41.2
Collector current IC (A)
Base to emitter voltage VBE (V)
0.4
T
C
= 75°C
–25°C
25°C
VCE = 4 V
Typical Transfer Characteristics
1,000
500
200
100
50
20
5
10
0.01 0.02
DC current transfer ratio hFE
0.05 2
Collector current IC (A)
0.1 0.5 50.2 1.0
VCE = 4 V
DC Current Transfer Ratio
vs. Collector Current
TC = 75°C
25
–25
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00.20.01 0.02 1.00.05 0.1 0.5 2 5
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current IC (A)
Collector to emitter saturation voltage VCE(sat) (V)
IC = 10 IB
TC = 75°C
25
–25
2SD1133, 2SD1134
4
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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