Schottky Diodes: MNL 100 Series
Low Barrier Schottky Mixer Diodes
Description
The MicroMetrics MNL 100 series of
Low Barrier Schottky diodes are metal
semiconductor junction devices that
have a typical short reverse recovery
time. This allows their use at high
microwave frequencies when the
performance of the n-type may be
reduced. The forward I-V of schottky
diodes is determined by the junction
metal used. For every different metal
selection there is a different forward
voltage characteristic or ”Barrier
Height“. These devices are best suited
for applications through 26 GHz.
Applications
Low Barrier Schottky Mixer diodes are
ideally suited for use in mixers,
doublers and modulators.
Features
• Multi-Junction Chips
• Low 1/F Noise
•Small Junction Capacitance
Packaging
•Chip, Glass, Ceramic, Beam Lead
50
Schottky Diodes
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Typical Perfor mance
100 .5 1.0
10
1
100 µA
100 mA
FORWARD CURRENT
FORWARD VOLTAGE
(V)
Schottky Diodes: MNL 100 Series
Electrical Characteristics
51
Schottky Diodes
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Breakdown Forward Junction Series Tangential
Voltage Voltage Capacitance Resistance Signal
@10µA @1mA @0 Vdc 1MHz @5 mA Sensitivity
MIN MAX TYP TYP TYP Part
(V) (V) (pF) (Ohms) (dB) Number
2.0 0.25 0.08 16.0 -55 MNL100
2.0 0.28 0.1 16.0 -52 MNL101
2.0 0.3 0.12 14.0 -50 MNL102
2.0 0.32 0.14 10.0 -48 MNL103
3.0 0.25 0.08 16.0 -55 MNL104
3.0 0.28 0.1 16.0 -52 MNL105
3.0 0.3 0.12 14.0 -50 MNL106
3.0 0.32 0.14 10.0 -48 MNL107
4.0 0.25 0.08 16.0 -55 MNL108
4.0 0.28 0.1 16.0 -52 MNL109
4.0 0.3 0.12 14.0 -50 MNL110
4.0 0.32 0.14 10.0 -48 MNL111
5.0 0.25 0.08 16.0 -55 MNL112
5.0 0.28 0.1 16.0 -52 MNL113
5.0 0.3 0.12 14.0 -50 MNL114
5.0 0.32 0.14 10.0 -48 MNL115
Maximum Ratings
Operating Temperature -55°C to + 150°C
Storage Temperature -65°C to + 200°C
Power Dissipation @25°C250mW
(derate linearly to zero at 150°C)
