HMC555 v02.0907 Features The HMC555 is ideal for: Wide IF Bandwidth: DC - 3.5 GHz * Microwave Radio High Image Rejection: 17 dB * Satellite Communication Systems High LO to RF Isolation: 50 dB * Military End Use High Input IP3: +21 dBm * Test Equipment & Sensors Passive Topology: No DC Bias Required TE Typical Applications Compact Size: 1.49 x 1.15 x 0.1mm Functional Diagram General Description LE The HMC555 is a compact I/Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process. All data shown below is taken with the chip mounted in a 50 Ohm test fixture and includes the effects of 1 mil diameter x 12 mil length bond wires on each port. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. This compact mixer is a much more compact alternative to hybrid style Image Reject Mixers and Single Sideband Upconverter assemblies, and is ideal for microwave radio applications. The redundant IF port connections located on opposing sides of the HMC555 chip, provide added layout flexibility. B SO MIXERS - I/Q MIXERS / IRM - CHIP 3 GaAs MMIC I/Q MIXER 31 - 38 GHz O Electrical Specifi cations, TA = +25 C, IF= 100 MHz, LO = +17 dBm* Parameter Min. Frequency Range, RF/LO Frequency Range, IF Max. Min. 11 Max. 10.5 15 11 LO to RF Isolation 37 50 35 LO to IF Isolation 13 20 12 17 Units GHz DC - 3.5 13 11 1 dB Compression (Input) Typ. 34 - 38 DC - 3.5 Conversion Loss (As IRM) Image Rejection Typ. 31 - 34 GHz 12.5 dB 17 dB 16.5 dBm 40 dB 16 dB dBm IP3 (Input) 19 21 Amplitude Balance 0.5 1 dB Phase Balance 16 12 deg * Unless otherwise noted, all measurements performed as downconverter. 3 - 118 For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC555 v02.0907 GaAs MMIC I/Q MIXER 31 - 38 GHz Data taken as IRM with External IF Hybrid Conversion Gain vs. Temperature Image Rejection vs. Temperature 25 -15 +25C +85C -55C -20 10 +25C +85C -55C 5 0 30 31 32 33 34 35 36 37 38 30 39 31 32 Conversion Gain vs. LO Drive 34 35 36 37 38 39 37 38 39 37 38 39 Return Loss 0 0 +15dBm +17dBm +19dBm -10 -15 30 B SO -5 -20 31 32 33 34 35 36 37 38 -5 -10 RF LO -15 -20 39 30 31 32 RF FREQUENCY (GHz) 34 35 36 Input IP3 vs. LO Drive 30 18 25 IP3 (dBm) 20 16 +25C +85C -55C 14 33 FREQUENCY (GHz) O Input P1dB vs. Temperature P1dB (dBm) 33 RF FREQUENCY (GHz) LE RF FREQUENCY (GHz) CONVERSION GAIN (dB) 3 15 TE -10 20 MIXERS - I/Q MIXERS / IRM - CHIP IMAGE REJECTION (dB) -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 0 12 20 15 LO = +15 dBm LO = +17 dBm LO = +19 dBm 10 10 5 30 31 32 33 34 35 36 37 38 39 RF FREQUENCY (GHz) 30 31 32 33 34 35 36 RF FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 3 - 119 HMC555 v02.0907 GaAs MMIC I/Q MIXER 31 - 38 GHz Quadrature Channel Data Taken Without IF Hybrid Isolations IF Bandwidth* 0 0 LO/IF2 -5 RESPONSE (dB) -20 -30 LO/IF1 RF/IF2 -10 TE -40 -50 RETURN LOSS CONVERSION GAIN -15 LO/RF -60 RF/IF1 -70 30 31 32 33 34 35 36 37 38 -20 0.5 39 1 1.5 Amplitude Balance vs. LO Drive 2.5 3 3.5 4 4.5 38 39 Phase Balance vs. LO Drive 2 0 B SO 1 LO = +15dBm LO = +17dBm LO = +19dBm -1 -2 -3 30 31 32 33 34 35 36 37 38 PHASE BALANCE (degrees) 25 3 20 15 10 LO = +15dBm LO = +17dBm LO = +19dBm 5 0 30 39 31 32 RF FREQUENCY (GHz) 0 34 35 36 37 SIDEBAND REJECTION (dBc) 0 -5 -10 +15dBm +17dBm +19dBm -15 33 RF FREQUENCY (GHz) Upconverter Performance Sideband Rejection vs. LO Drive* O Upconverter Performance Conversion Gain vs. LO Drive* CONVERSION GAIN (dB) 2 IF FREQUENCY (GHz) LE RF FREQUENCY (GHz) AMPLITUDE BALANCE (dB) MIXERS - I/Q MIXERS / IRM - CHIP 3 ISOLATION (dB) -10 -20 -5 -10 LO = +17dBm LO = +19dBm LO = +21dBm -15 -20 -25 -30 -35 -40 30 31 32 33 34 35 36 37 38 39 RF FREQUENCY (GHz) 30 31 32 33 34 35 36 37 38 39 RF FREQUENCY (GHz) * Conversion gain data taken with external IF hybrid 3 - 120 For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC555 v02.0907 GaAs MMIC I/Q MIXER 31 - 38 GHz RF Input MxN Spurious Outputs nLO +19 dBm LO Drive +27 dBm 0 xx -12 xx xx xx Channel Temperature 150C 1 47 0 53 xx xx Continuous Pdiss (T=85C) (derate 8.95 mW/C above 85C) 2 xx 62 68 59 xx 582 mW 3 xx xx 101 70 90 4 xx xx xx 90 104 IF1 / IF2 Input Thermal Resistance (RTH) (channel to die bottom) 111.6 C/W Storage Temperature -65 to +150 C Operating Temperature -55 to +85 C ESD Sensitivity (HBM) Class 1A 0 1 2 3 TE +24 dBm mRF 4 RF = 35.1 GHz @ -10 dBm LO = 35 GHz @ +17 dBm Data taken without IF hybrid All values in dBc below IF power level O B SO Outline Drawing LE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" 4. BACKSIDE METALIZATION: GOLD 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE .002" 9. THIS DIE IS DESIGNED FOR PICK-UP WITH 3 MIXERS - I/Q MIXERS / IRM - CHIP Absolute Maximum Ratings VACUUM (EDGE) COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED WITHIN THIS RECTANGULAR AREA. Die Packaging Information [1] Standard Alternate WP-3 (Waffle Pack) [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 3 - 121 HMC555 v02.0907 GaAs MMIC I/Q MIXER 31 - 38 GHz Pad Descriptions Pad Number Function Description 1 RF This pad is AC coupled and matched to 50 Ohms. 4 LO This pad is AC coupled and matched to 50 Ohms. 2 (5) IF2 3 (6) IF1 TE B SO Assembly Diagrams The backside of the die must be connected to RF/DC ground. LE GND This pad is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pad must not source/sink more than 3mA of current or die non-function and possible die failure will result. Pads 5 and 6 are alternate IF ports. O MIXERS - I/Q MIXERS / IRM - CHIP 3 Interface Schematic 3 - 122 For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. HMC555 v02.0907 GaAs MMIC I/Q MIXER 31 - 38 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Wire Bond 0.076mm (0.003") TE 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 0.127mm (0.005") Thick Alumina Thin Film Substrate Handling Precautions Follow these precautions to avoid permanent damage. Figure 1. B SO LE Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. O Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. 3 MIXERS - I/Q MIXERS / IRM - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343 978-250-3373 781-329-4700Fax: * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 3 - 123 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Analog Devices Inc.: HMC555