APTGT200DA120D3 Boost chopper VCES = 1200V IC = 200A @ Tc = 80C (R) Trench IGBT Power Module Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction 3 1 Q2 6 7 3 2 2 1 4 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance - M6 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat 7 6 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation SCSOA Short Circuit Safe Operating Area TC = 25C Max ratings 1200 300 200 400 20 1040 Tj = 125C 800A@900V TC = 25C TC = 80C TC = 25C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com http://store.iiic.cc/ 1-3 APTGT200DA120D3 - Rev 0 January, 2004 5 APTGT200DA120D3 All ratings @ Tj = 25C unless otherwise specified Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Reverse diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage Erec Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VGE = 0V, IC = 6mA VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 200A Tj = 125C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz TJ TSTG TC Torque Wt 5.0 Inductive Switching (25C) VGE = 15V VBus = 600V IC = 200A RG = 3.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A RG = 3.6 Test Conditions IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =900A/s IF = 200A VR = 600V di/dt =900A/s RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight 1.7 2.0 5.8 Typ 14 0.8 0.66 280 90 550 6 2.1 V 6.5 600 V nA Max Unit nF ns 100 ns 650 180 Typ 1.6 1.6 Tj = 125C 17 Tj = 25C 20 Tj = 125C 36 IGBT Diode Typ Max 2.1 -40 -40 -40 3 3 Unit V mJ C Max 0.12 0.20 2500 M6 M6 Unit V mA 300 Min APT website - http://www.advancedpower.com http://store.iiic.cc/ Max 130 Min Junction to Case Typ Tj = 25C Tj = 125C Symbol Characteristic VISOL 1.4 Min Thermal and package characteristics RthJC Min 1200 Unit C/W V 150 125 125 5 5 380 C N.m g 2-3 APTGT200DA120D3 - Rev 0 January, 2004 Electrical Characteristics APTGT200DA120D3 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com http://store.iiic.cc/ 3-3 APTGT200DA120D3 - Rev 0 January, 2004 Package outline