V
RRM
= 20 V - 100 V
I
F
= 200 A
Features
• High Surge Capability Twin Tower Package
• Types up to 100 V V
RR
M
Parameter Symbol MBR20020CT (R) MBR20030CT (R) Unit
Repetitive peak reverse
V
20
30
V
Silicon Power
Schottk
y
Diode
MBR20020CT thru MBR20040CTR
MBR20040CT (R)
35
MBR20035CT (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
40
voltage
V
RRM
20
30
V
RMS reverse voltage V
RMS
14 21 V
DC blocking voltage V
DC
20 30 V
Continuous forward
current I
F
200 200 A
Operating temperature T
j
-40 to 175 -40 to 175 °C
Storage temperature T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBR20020CT (R) MBR20030CT (R) Unit
Diode forward voltage 0.65 0.65
55
200 200
Thermal characteristics
Thermal resistance,
junction - case R
thJC
0.5 0.5 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive
forward current, Half
Sine Wave
I
F,SM
Reverse current I
R
V
F
200
A1500
V
R
= 20 V, T
j
= 25 °C
I
F
= 100 A, T
j
= 25 °C
T
C
≤ 136 °C
Conditions
35
25
1500 1500
-40 to 175
200 200
1500
-40 to 175
MBR20040CT (R)
55
MBR20035CT (R)
0.5
V
R
= 20 V, T
j
= 125 °C
0.5
0.65 0.65
200 mA
V
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 m
s
40
28
4035
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MBR20020CT thru MBR20040CTR
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