MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features * High Surge Capability * Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Symbol Conditions MBR20020CT (R) MBR20030CT (R) MBR20035CT (R) MBR20040CT (R) Unit VRRM 20 30 35 40 V VRMS 14 21 25 28 V VDC 20 30 35 40 V 200 200 200 200 A 1500 1500 1500 1500 A -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 C C IF TC 136 C Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms Operating temperature Storage temperature Tj Tstg Electrical characteristics, at Tj = 25 C, unless otherwise specified Symbol Conditions Diode forward voltage VF Reverse current IR IF = 100 A, Tj = 25 C VR = 20 V, Tj = 25 C VR = 20 V, Tj = 125 C Parameter MBR20020CT (R) MBR20030CT (R) MBR20035CT (R) MBR20040CT (R) 0.65 5 200 0.65 5 200 0.65 5 200 0.65 5 200 0.5 0.5 0.5 0.5 Unit V mA Thermal characteristics Thermal resistance, junction - case www.genesicsemi.com RthJC 1 C/W MBR20020CT thru MBR20040CTR www.genesicsemi.com 2