February 2004
Copyright © Alliance Semiconductor. All rights reserved.
®
AS7C34098A
3.3 V 256 K × 16 CMOS SRAM
2/12/04, v. 1.2 Alliance Semiconductor P. 1 of 12
Features
• Pin compatible with AS7C34098
• Industrial and commercial temperature
• Organization: 262,144 words × 16 bits
• Center power and ground pins
• High speed
- 10/12/15/20 ns address access time
- 4/5/6/7 ns output enable access time
• Low power consumption: ACTIVE
- 650 mW /max @ 10 ns
• Low power consumption: STANDBY
-18 mW /max CMOS
• Individual byte read/write controls
• Easy memory expansion with CE, OE inputs
• TTL- and CMOS-compatible, three-state I/O
• 44-pin JEDEC standard packages
- 400-mil SOJ
- TSOP 2
- 48-ball FBGA 6 x 9 mm
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
Logic block diagram
1024 × 256 × 16
Array
(4,194,304)
OE
CE
WE Column decoder
Row Decoder
A0
A1
A2
A3
A4
A6
A7
A8
V
CC
GND
A12
A5
A9
A10
A11
A14
A15
A16
A17
A13
Control circuit
I/O1–I/O8
I/O9–I/O16
UB
LB
I/O
buffer
Pin arrangement for SOJ and TSOP 2
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
I/O14
I/O13
GND
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
A4
CE
I/O1
I/O2
I/O3
I/O4
V
CC
GND
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
TSOP2
21
22
A8
A9
UB
LB
I/O16
I/O15
2A1 3A2
4A3
1A0
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
43
42
41
44
A16
A15
OE
A17
44-pin (400 mil) SOJ
Selection guide
–10 –12 –15 –20 Unit
Maximum address access time 10 12 15 20 ns
Maximum output enable access time 4 5 6 7 ns
Maximum operating current Industrial 180 160 140 110 mA
Commercial 170 150 130 100 mA
Maximum CMOS standby current 5 5 5 5 mA
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48-BGA Ball-Grid-Array Package
1 2 3 4 5 6
ALB OE A0 A1 A2 NC
BI/O9 UB A3 A4 CE I/O1
C I/O10 I/O11 A5 A6 I/O2 I/O3
DV
SS I/O12 A17 A7 I/O4 VCC
EV
CC I/O13 NC A16 I/O5 VSS
F I/O15 I/O14 A14 A15 I/O6 I/O7
G I/O16 NC A12 A13 WE I/O8
H NC A8 A9 A10 A11 NC
48-BGA Ball-Grid-Array Package
Version 2 Alternative
1 2 3 4 5 6
ALB OE A0 A1 A2 NC
BI/O1 UB A3 A4 CE I/O9
C I/O2 I/O3 A5 A6 I/O11 I/O10
DV
SS I/O4 A17 A7 I/O12 VCC
EV
CC I/O5 NC A16 I/O13 VSS
F I/O7 I/O6 A14 A15 I/O14 I/O15
G I/O8 NC A12 A13 WE I/O16
H NC A8 A9 A10 A11 NC
Ball arrangement BGA
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Functional description
The AS7C34098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as
262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are
desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are
ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank
memory systems.
When CE is high the device enters standby mode. The device is guaranteed not to exceed 18mW power consumption in CMOS
standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/
O1–I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices
should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or
write enable is active, output drivers stay in high-impedance mode.
The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be
written and read. LB controls the lower bits, I/O1–I/O8, and UB controls the higher bits, I/O9–I/O16.
All chip inputs and outputs are TTL- and CMOS-compatible, and operation is for 3.3V (AS7C34098A) supply. The device is
available in the JEDEC standard 400-mL, 44-pin SOJ, TSOP 2 and also with 48B uBGA package with 6 X 9mm external
dimension..
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Absolute maximum ratings
Parameter Symbol Min Max Unit
Voltage on VCC relative to GND Vt1 –0.50 +5.0 V
Voltage on any pin relative to GND Vt2 –0.50 VCC +0.50 V
Power dissipation PD–1.5W
Storage temperature (plastic) Tstg –65 +150 °C
Ambient temperature with VCC applied Tbias –55 +125 °C
DC current into outputs (low) IOUT –±20mA
Truth table
CE WE OE LB UB I/O1–I/O8 I/O9–I/O16 Mode
HXXXX High Z High Z Standby (I
SB, ISB1)
LHHXX
High Z High Z Output disable (ICC)
LXXHH
LHL
LH D
OUT High Z
Read (ICC)H L High Z DOUT
LL D
OUT DOUT
LLX
LH D
IN High Z
Write (ICC)
H L High Z DIN
LL D
IN DIN
Key: X = Don’t care, L = Low, H = High.
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Recommended operating conditions
Parameter Symbol Min Typical Max Unit
Supply voltage VCC (10/12/15/20) 3.0 3.3 3.6 V
Input voltage VIH** 2.0 – VCC + 0.5 V
VIL*–0.5 – 0.8 V
Ambient operating temperature commercial TA0– 70°C
industrial TA–40 – 85 °C
* VIL min = –1.0V for pulse width less than 5ns.
** VIH max = VCC + 2.0V for pulse width less than 5ns.
DC operating characteristics (over the operating range)1
Parameter Symbol Test condi tions
–10 –12 –15 –20
UnitMin Max Min Max Min Max Min Max
Input leakage
current |ILI|VCC = Max
VIN = GND to VCC
– 1– 1 –1–1µA
Output leakage
current |ILO|
VCC = Max
CE = VIH or OE = VIH
or WE = VIL
VI/O = GND to VCC
– 1– 1 –1–1µA
Operating
power supply
current
ICC
VCC = Max
Min cycle, 100% duty
CE = VIL, IOUT = 0mA
Industrial – 180 – 160 – 140 – 110 mA
Commercial - 170 - 150 - 130 - 100 mA
Standby power
supply current
ISB
VCC = Max
CE = VIH, f = Max – 60– 60 –60–60mA
ISB1
VCC = Max
CE ≥ VCC – 0.2V, VIN ≥ VCC
– 0.2V or VIN ≤ 0.2V, f = 0
– 5– 5 –5–5mA
Output voltage VOL IOL = 8 mA, VCC = Min – 0.4 – 0.4 – 0.4 – 0.4 V
VOH IOH = –4 mA, VCC = Min 2.4 – 2.4 – 2.4 – 2.4 – V
Capacitance (f = 1MHz, Ta = 25° C, VCC = NOMINAL)2
Parameter Symbol Signals Test conditions Max Unit
Input capacitance CIN A, CE, WE, OE, UB, LB VIN = 0V 6 pF
I/O capacitance CI/O I/O VIN = VOUT = 0V 8 pF
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Key to switching waveforms
Read waveform 1 (address controlled)6,7,9
Read cycle (over the operating range)3,9
Parameter Symbol
–10 –12 –15 –20
Unit NotesMin Max Min Max Min Max Min Max
Read cycle time tRC 10 – 12 – 15 – 20 – ns
Address access time tAA – 10 – 12 – 15 – 20 ns
Chip enable (CE) access time tACE – 10 – 12 – 15 – 20 ns
Output enable (OE) access time tOE – 4 –5–6–7ns
Output hold from address change tOH 3 – 3–3–3–ns5
CE Low to output in low Z tCLZ 3 – 3–3–3–ns4, 5
CE High to output in high Z tCHZ – 5 –6–7–9ns4, 5
OE Low to output in low Z tOLZ 0 – 0–0–0–ns4, 5
OE High to output in high Z tOHZ – 5 –6–7–9ns4, 5
LB, UB access time tBA – 5 –6–7–8ns
LB, UB Low to output in low Z tBLZ 0 – 0–0–0–ns
LB, UB High to output in high Z tBHZ – 5 –6–7–9ns
Power up time tPU 0 – 0–0–0–ns5
Power down time tPD – 10 – 12 – 15 – 20 ns 5
Undefined/don’t careFalling inputRising input
t
OH
t
AA
t
RC
t
OH
Data
OUT
Address
Data validPrevious data valid
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Read waveform 2 (CE, OE, UB, LB controlled)6,8,9
Write cycle (over the operating range)11
Parameter Symbol
–10 –12 –15 –20
Unit NoteMin Max Min Max Min Max Min Max
Write cycle time tWC 10–12–15–20– ns
Chip enable (CE) to write end tCW 7–8–10–12–ns
Address setup to write end tAW 7–8–10–12–ns
Address setup time tAS 0–0–0–0–ns
Write pulse width (OE = High) tWP1 7–8–10–12–ns
Write pulse width (OE = Low) tWP2 10–12–15–20– ns
Write recovery time tWR 0–0–0–0–ns
Address hold from end of write tAH 0–0–0–0–ns
Data valid to write end tDW 5–6 7–9–ns
Data hold time tDH 0–0–0–0–ns4, 5
Write enable to output in High-Z tWZ 05060709ns4, 5
Output active from write end tOW 3–3–3–3–ns4, 5
Byte enable Low to write end tBW 7–8–10–12–ns4, 5
Data valid
t
RC
t
AA
t
BLZ
t
BA
t
OE
t
OLZ
t
OH
t
OHZ
t
CHZ
t
BHZ
t
ACE
t
CLZ
Address
OE
CE
LB, UB
Data
OUT
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Write waveform 1(WE controlled)10,11
Write waveform 2 (CE controlled)10,11
Address
CE
LB, UB
WE
Data
IN
Data
OUT
t
WC
t
CW
t
BW
t
AW
t
AS
t
WP
t
DW
t
DH
t
OW
t
WZ
t
AH
Data undefined High Z
Data valid
t
WR
Address
CE
LB, UB
WE
Data
IN
t
WC
t
CW
t
BW
t
WP
t
DW
t
DH
t
OW
t
WZ
t
AH
Data
OUT
Data undefined
High Z High Z
t
AS
t
AW
Data valid
t
CLZ
t
WR
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Write waveform 3 10,11
AC test conditions
Notes
1During V
CC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2 This parameter is sampled, but not 100% tested.
3 For test conditions, see AC Test Conditions, Figures A and B.
4t
CLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured ±500mV from steady-state voltage.
5 This parameter is guaranteed, but not tested.
6WE
is High for read cycle.
7CE
and OE are Low for read cycle.
8 Address valid prior to or coincident with CE transition Low.
9 All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A
13 C=30pF, except on High Z and Low Z parameters, where C=5pF.
Address
CE
LB, UB
WE
Data
IN
t
WC
t
CW
t
BW
t
WP
t
DW
t
DH
t
WZ
t
AH
Data
OUT
Data undefined
High Z High Z
t
AS
t
AW
Data valid
t
WR
- Output load: see Figure B.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
10%
90%
10%
90%
GND
+3.0V
2 ns
Figure A: Input pulse
350
Ω
C
13
320
Ω
D
OUT
GND
+3.3V
Figure B: 3.3V Output load
168
Ω
D
OUT
+1.728V
Thevenin equivalent:
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Package dimensions
44-pin TSOP 2
Min (mm) Max (mm)
A1.2
A10.05 0.15
A20.95 1.05
b0.3 0.45
c0.12 0.21
d18.31 18.52
e10.06 10.26
He11.68 11.94
E0.80 (typical)
l0.40 0.60
d
H
e
1234567891011121314
44 43424140393837363534333231
1516
3029
1718 1920
272625
c
l
A
1
A
2
E
44-pin TSOP 2
0–5
°
21
24
22
23
e
A
b
44-pin SOJ 400 mils
Min(mils) Max(mils)
A0.128 0.148
A1 0.025 -
A2 0.105 0.115
B0.026 0.032
b0.015 0.020
c0.007 0.013
D1.120 1.130
E0.370 NOM
E1 0.395 0.405
E2 0.435 0.445
e0.050 NOM
Seating
Plane
44-pin SOJ
28
Pin 1
D
e
E2
E1
A1
b
B
AA2
E
c
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Minimum Typical Maximum
A–0.75–
B5.90 6.00 6.10
B1 –3.75–
C8.90 9.00 9.10
C1 –5.25–
D0.30 0.35 0.40
E––1.20
E1 –0.32–
E2 0.24 0.27 0.3
Y––0.10
Notes
1. Bump counts: 48 (8 row × 6 column).
2. Pitch: (x,y) = 0.75 mm × 0.75 mm (typ).
3. Units: millimeters.
4. All tolerance are ±0.050 unless otherwise specified.
5. Typ: typical.
6. Y is coplanarity: 0.10 (max).
48-ball FBGA
Ball #A1
Top View
Ball #A1 index
Bottom View
123456
A
C
D
E
F
G
H
B
A
A
B1
C1 SRAM Die C
Elastomer
B
Side View Detail View
E
E2
E1
D
Die
A
E
E2
0.3/Typ
Y
Die
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Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts. (EX: AS7C34098A - 10TCN)
Ordering Codes
Package Temperature 10 ns 12 ns 15 ns 20 ns
SOJ Commercial AS7C34098A-10JC AS7C34098A-12JC AS7C34098A-15JC AS7C34098A-20JC
Industrial AS7C34098A-10JI AS7C34098A-12JI AS7C34098A-15JI AS7C34098A-20JI
TSOP 2 Commercial AS7C34098A-10TC AS7C34098A-12TC AS7C34098A-15TC AS7C34098A-20TC
Industrial AS7C34098A-10TI AS7C34098A-12TI AS7C34098A-15TI AS7C34098A-20TI
BGA Commercial AS7C34098A-10BC AS7C34098A-12BC AS7C34098A-15BC AS7C34098A-20BC
Industrial AS7C34098A-10BI AS7C34098A-12BI AS7C34098A-15BI AS7C34098A-20BI
BGA Ball
Arrange-ment
Version 2
Commercial AS7C34098A-10B2C AS7C34098A-12B2C AS7C34098A-15B2C AS7C34098A-20B2C
Industrial AS7C34098A-10B2I AS7C34098A-12B2I AS7C34098A-15B2I AS7C34098A-20B2I
Part numbering system
AS7C X 4098A –XX J, T, or B X X
SRAM prefix Voltage:
3 - 3.3V CMOS
Device
number
Access
time
Packages:
J: SOJ 400 mil
T: TSOP 2
B: 48-ball FBGA 6 x 9 mm
Temperature ranges:
C: Commercial, 0°C to 70°C
I: Industrial, –40°C to 85°C
N = Lead Free Parts
Alliance Semiconductor Corporation
2575, Augustine Drive,
Santa Clara, CA 95054
Tel: 408 - 855 - 4900
Fax: 408 - 855 - 4999
www.alsc.com
Copyright © Alliance Semiconductor
All Rights Reserved
Part Number: AS7C34098A
Document Version: v. 1.2
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered
trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make
changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document.
The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at
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AS7C34098A
®
®
