4N25 - Motorola / Freescale Semiconductor

4N25, 4N25A

4N26

4N27

4N28

NPN PHOTOTRANSISTOR AND

PN INFRARED EMITTING DIODE

...Gallium Arsenide LED optically coupled to aSilicon Photo Transistor designed

for applications requiring electrical isolation, high-current transfer ratios, small

package size and low cost; such as interfacing and coupling svstems, phase and

feedback controls, solid-state relays and general-purpose switching circuits.

High Isolation Voltage–

Vls0=7500V (Min)

High Collector Output Current

@lF=lOmA–

Ic =5.0 mA (Typ) –4N25,A,4N26

2.0 mA (Tvp) –4N27,4N28

Economical, Compact, Dual-In-Line

Package

sExcellent FraquancV Response —

300 kHz (TYP)

oFast Switching Times@ Ic =10 mA

tcn =0.87 PS (Tvp) –4N25,A,4N26

2.1 US (Tvp) –4N27,4N28

toff =11 US (Tvp) –4N25,A,4N26

5.O#s (TYp) –4N27,4N28

e4N25A is ULRecognized

File Number E54915

INFRARED-EMITTING DIODE MAXIMUM RATINGS ,.),:,,

,,b+,ii!.’ I

.?..

Reverse Voltage VR 3.0 .,$~golts ‘“

Forward Current –Continuous IF 80 ,t ~W.xla, h

e.. ““’Current –Peak IF 3.0 ,., “;\$. .,&P

rorwara tAmp

Pulse Width =300Ns, 2.WA Duty CVcle \t:, \\ ,..,

.’‘~j!,,.s.,,.,)$:::.\

Total Power Dissipation @TA =25°C pD 150 “::. mW

Negligible Power in Transistor .$ r

Derate above 25°C ,< +$, 2.0 ImW /°C

.,,. .,(,.. 1

PHOTOTRANSISTOR MAXIMUM RATINGS *..,.’’:8!,,

Collector-Emitter Voltage ,y~* 30 volts

Emitter-Collector Voltage ]{$$gti~’ 7:0 volts

Collector-Base Voltage ‘~~$~’~BO

,.:,,,, 70 volts

Total Device Dissipation @TA =25°C ‘~>!.

$+$. ~

.’h,. pD 150 mW

Negligible Power in Dioda \:*,.. *. ;t,:i

,:j> .

Derate above 25°C 2.0 mW/°C

Total Device Dissipation @TA *$45~ “‘“ pD 250 mW

Equal Power Dissipation in~ach Ewent 3.3

Derate above 2@C ,, ,, ‘ ,, mWpC

,~$:,,l:.::~,.

Junction Temperatur~~@~ge~;f *TJ -55 to +100 ‘c

Storage Temperat&,~~/n-& Tstg -55 to +150 Oc

Soldering Temp@@.(1 Os) 260 Oc

,J*

160 values in the equation:

z. ~ ~ TJ1 -TA =R@JA (PD1 +Ko pD2)

g140 ~ ~

zTA =250C where:

07TJ1 Junction Temperature 1100°C)

~120

~TA Ambient Temperature

E100 ~

=~~50DC \

ROJA Junction to Ambient Thermal

~60

Resistance 1500°C/W)

:P~, Power Dissipation in One Chip

<~ ~ J50~ \pD2 pOwer Dissipation in Other Chip

5 40

\\\

Ke Thermal Coupling Coefficient

;20 (20%)

.O Example:

o.020 40 60 80 100 ,60 With PD1 =90 mW in the LED

120 I40

PDZ, AVERAGE POWER OISSIPATI ON(mW) @TA =50°C, the transistor

PD (P D~)must be 16ss than 50 mW.

STYLE 1:

PIN 1.

ANODE

CATHODE

EMITTER

COLLECTO

BASE

NOTES:

1. DIMENSIONS A AND BAR EDATUMS.

2. -T IS SEATING PLANE,

3. POSITIONAL TOLERANCES FOR LEAOS:

+l@ 0.13 (0.005)@l TIA@I@{

4. DIMENSION LTO CENTER OF LEAOS

WHEN FORMED PARALLEL.

5. DIMENSIONING ANO TO LERANCING PER

ANSI Y14.5, 1973.

CASE 730A-01

dOTOROLA INC., 1984 DS2623R5

LED CHARACTERISTICS (TA = 25°C unless otherwise noted) A.~ >

Characters

*Reverse Leakaae Current

I*Forward Voltage

(i F= lomA) IVF “– 1.2 1.5 I‘1

volts

;tic Symbol Min TYP Max Unit

I(VR=3.0VIR~: l.OMohms) IR ‘o .005 100 YA

11II1

Capacitance c

(Vn=OV. f=l.O MHz) —40 pF

PHOTOTRANSISTOR CHARACTERISTICS (TA =25°C and IF =Ounless otherwise noted)

*Collector-Emitter Dark Current 4N25, A, 4N26, 4N27

(VCE =10 V, Base Open) ICEO —3.5 50

4N28 nA

— — 100

*Collector-Base Dark Current ,+!.

iCBO

(VCB =10 V, Emitter Open)

— — 20 ,q~~~

;’:$1k,r;”~t~,<

*Collector-Base Breakdown Voltaga ,,J

V(BR)CBO 70

(IC=IOOHA, IE=O) —‘*J. u~its

{i<+,.,*,$$,

~..:,

*Collector-Em itte~ Breakdown Voltage

,,.,.~‘:~} :\.

,$~,,>. ,,,

V(BR)qEQ .\ ;:,,.,:.,:

(iC=l.OmA, lB=O) 30 —.<.+ ,$*:,;’+ volts

~ji,

$;;:

*Emitter-Collector Breakdown voltage !,.,i&$.’,,+.

V(BR)ECO 7.0

(IE=IOOVA, IB=O). 8.0 .t::’’’’”~--” volts

~+q

.F.?:,*,.$}:

DC Current Gain ,..

hFE 32 ~~$g+ –

(vCE =5.0 V, [c =500 PA)

—.,..,

~’$i~>J.,,,.y.!.\

,$\~~,>?,\-

COUPLED CHARACTERISTICS (TA =25°C unless otherwise noted) ,.. ,3* i.

;, ~;t.~ ,%.

*. .:

‘Collector Output Current (1) 4N25, A, 4N26 Ic 2.0 *S. ;,,:>9”’$0

‘<k... . ‘.,. —mA

(vCE=l Ov, iF=l OmA, lB=O) 4N27, 4N28 1.Q, ‘“‘.*. “2,0 —

Isolation Surge Voltage (2, 5) Vlso ,m

;$l .,+:,.,,,

(60 HZ Peak ac, 5Seconds) ,,+,,+,+--,.,J, volts

(6O HZ Peak) >Fa%$,m,, –

*4N25, A.$: 2*O ——

I-1- 1I

(60 Hz RMS for 1Second) 13) ., ——

*4N25A ..;.$: ‘b’ 1-7-;5 —

*.,9.

.*.<*,-.iq —1011 —Ohms

Isolation Resistance (2)

(v= 500V) ,,f *,

*Collector-Emitter Saturation +$b&>$~~E (sat) –

(lc= 2.OmA, IF =50mA) 0.2 0.5 volts

~< ,<\\.

Isolation Capacitance (2)

s,.

(V= O, f=l.OMHz) ~,$r~ —1.3 —

“,~. . pF

.,::$:

Bandwidth (4) ‘.’$:?$,,

,l~,i.

(lc= 2.0mA, RL= 100ohms, Figure 11 {2) *8 — —

.... 300 —kHz

.,.$.*J,....?/:.\..<

, , ,>s+...~,,,

SWITCHING CHARACTERISTICS .,,$”: +,$,!

.,,....,,

Delay Time ~kk~$;,Y$5, A, 4N26

(lC=l OmA, VCC=lOV td —0.07

..;*.,’*.l>,,;,~2N27, 4N28 ps

~. ‘..,.i’?~—0.10

Rise Time Figures 6and B) Y;,$X‘-~. —

~:i$:>:, 4N25, A, 4N26

.... tr —0.8 —

\,\#t4 ps

~:,.$.:.tii~$’ 4N27, 4N28 —2.0

Storage Time }:..

$,, ‘~: 4N25, A, 4N26

(lC=lOmA, VCC=#&$~M’ ts 4.0 —

4N27, 4N28 Ps

—2.0

Fall Time Figures 7and 8),,t+Y;$~?+.S@ 4N25, A, 4N26 tf —

~.,?:+,;,, 8.0 —

\,i

... 4N27, 4N28 ps

—8.0

-,.]~

*Indicates JE DEC Registe~@,~ata .

—

(1) pulse Test: Pulse Wi+{M;~~S,Q@ ps, Duty Cycle <2,o%.

(2) For this test LED,$in$il-M 2are common and phototransistor pins 4, 5, and 6 are common.

(3) RMS VOlts, 60 ~~;~~.~,fhis test, pins 1, 2, and 3are common and pins 4, 5, and 6are common.

(4) IFadjusted to %&$%tJ,c’= 2.0 mA and ic =2.0 mA p-p at 10 kHz:

(5) Isolation Su~Q,,~~{$%ge, VISO, is an internal device dielectric breakdown rating.

FER CHARACTERISTICS

FIGURE 3 – 4N27,4N28

g10

E5.0

z2.0

~10

<0.5

g0.2

0.1

0.05

IF, FORWARD DIOOE CURRENT (mA) IF, FORWARO OIOOE CURRENT (mA)

@MOTOROLA Semiconductor Produces Inc.

●

TYPICAL ELECTRICAL CHARACTERISTICS

FIGURE 4 – FORWARD CHARACTERISTICS FIGURE 5 – COLLECTOR SATURATION VOLTAGE

:_ 20

-0

~=1.8

~;,,6

-o

~1.4

1.2

1.0

1.0 10 100 l.Ok

,.~:>,.,,

FIGURE 6–TURN-ON TIME .\@*” .?~~

..k... FIGURE’7 –TURN-OFF TIME

2ol~ ,\,t,*o k;

~g ,:*:

‘$, 1@ Vcc= 10 v

$).,,.......

~....,.,.,

‘$$&:i?$ 50 , , I!1 1 1,,I 1

1 1 IF= 20 ic

tII I I I I I I I IIITJ =25°C

..’$...

->,.., WI I

1 1 t~ !

I1 1 111I1 1 1 m~

0.021 I I I I I II.. ,:1I1t1I

#v’lo 20 30 50 0.2~t1i111 1 I I I I I I I I II

0.5 0.7 1.0 2.0 3.0 0.5 0.7 1,0 2,0 3.0 5.0 7.0 10 20 30 50

Ic, COLLE~.~~;W#

!%>:> “,

-.: fENT (mA) 1P. COLLECTOR CURRENT (mA)

Pulse

—— —

‘“P=F- ““or i~’:=

Pulse Wdth

=100@Duw L– __ _ ___~ s

Cycle =1.OOA 64-75 -50 -25 0

0+25 t50 +15 tloo

Ah TA, AMBIENT TEMPERATURE {°C)

mMOTOROLA Semiconduc~or Produ6%s inc.

FIGURE 11 – FREQUENCY RESPONSE TEST CIRCUIT

~0.3

~0.2

?0.1

—Q 30 50 70 100 200 300 500 700 1000

f, FREQUENCY (kHz)

TYPICAL

FIGURE 12 – ISOLATED MTTL

TO MOS (P-CHANNEL) LEVEL TRANSLATOR

FlGuRE14– Paw<i AMPLIFIER

.1 ~.;s~,:,.

FIGURE 10 – FREQUENCY RESPONSE

FIGURE 15 – INTERFACE BETWEEN LOGIC AND LOAD

Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does

not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its

patentrights nor the rights of others. Motorola end@are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Employment Opportunity/

Affirmative Action Employer,

—@MOTOROLA Semiconductor Products Inc. –

BOX 20912 .PHOENIX, ARIzONA 85036 .ASUBSIDIARY OF MOTOROLA INC.

●