PHASE CONTROL SCRs 7.4 TO 25 AMPERES 241 104 230.1 107 230.2 GE TYPE c10 ci JEDEC 2NTTTOA 2N1770-78 2N1842-50 ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION Ir(R Max. RMS on-state current (A) 1 average on-state current TIAV) conduction (A) @ Tg (C) \ one TSM surge current (A) re Max. |?t for fusing for > 1.5 msec (A Vv on-state conduction, rated {Vv} R resistance, dc, JC ccm) Max. holding current @ Cc (mA) time @1 c @1 c Typical turn-on time (usec) . turned-on current di/dt (A/usec) T. Junction operating temperature range ("C) 40 to 110 BLOCKING Typical critical rate-of-rise of off-state dv/dt voltage. Exponential @ max. rated T, (V/usec) FIRING a , required gate current to trigger st @ -65C @ c @ 25C Max. required gate voltage to trigger (V} c @ 40C @ 25C Min. gate voltage to trigger (V)} @ 110C @ 125C @ 150C VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 2N1770 25 cu 50 C116F1 C116A1 C116B1 C116C1 C11601 Cti6E1 C116M1 700 800 - 241 (C222 PACKAGE OUTLINE NO. 242,3, 4, & 6 (C220). *C123 isolated version of C122. 1392N1842-50 2N1792 SEE C52 SERIES 2N2023-31 SEE C60 SERIES The 2N1842 through 2N1850 Series of Silicon Controlled Rectifiers are reverse blocking triode thyristor semiconductor devices for use in medium power switching and phase control applica- tions requiring blocking voltages up to 500 volts, and average load currents (single-phase, 180 conduction angle) up to 10 amperes. General Electrics types C35, C37 and C137 SCRs are recommended for higher voltage ratings and where higher levels of performance are required for a device of this size. Type C35 C37 C137 Publication Number 160.20 160.23 160.45 MAXIMUM ALLOWABLE RATINGS PEAK FORWARD BLOCKING| PEAK FORWARD VOLTAGE, | REPETITIVE PEAK REVERSE NON EET es MILLISEC) TYPE VOLTAGE, Vox | Prv 5 VOLTAGE, Vom (rep) Vacu (non-rep) Tc = 40C +100C To = 40C +100C To = 40C +100C To = 40C + 100C 2N1842 25 Voits* 85 Volts 25 Volts* 35 Volts* 2N1843 50 Volts* 75 Volts 50 Volts* 75 Volts* 2N1844 100 Volts* 150 Volts 100 Volts* 150 Volts* 2N1845 150 Volts* 225 Volts 150 Volts* 225 Volts* 2N1846 200 Volts* 300 Volts 200 Volts* 800 Volts* 2N1847 250 Volts* 350 Volts 250 Volts* 350 Volts* 2N1848 300 Volts* 400 Volts 300 Volts* 400 Volts* 2N1849 400 Volts* 500 Volts 400 Volts* 500 Volts* 2N1850 500 Volts* 600 Volts 500 Volts* 600 Volts* Values apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which maximum Vrom and Vrom ratings apply equals 11C per watt. Cells with higher PFV ratings are available upon request. RMS Forward Current, On-State Average Forward Current, On-State Rate of Rise of Forward Current, On-State, di/dt Peak One-cycle Surge Forward Current, Ipm (surge) I*t (for fusing) Peak Gate Power Dissipation, Pex 16 amperes (all conduction angles) Depends on conduction angle (see Charts 3 and 4) 10 amperes per microsecond 125 amperes* 40 ampere? seconds (for times 21.5 milliseconds) 5 watts* Average Gate Power Dissipation, Pe (ay) Peak Forward Gate Voltage, Veru Peak Reverse Gate Voltage, Venu Storage Temperature, Ty, Operating Temperature, T; Stud Torque 0.5 watt* 10 volts* 5 volts* 40C to +125C* 40C to +100C* 30 lb-in (35 kg-cm) *Indicates Data included on JEDEC type number registration. **NOT TO EXCEED GATE POWER RATINGS 3282N1842-50 CHARACTERISTICS TEST SYMBOL | MIN. MAX, UNITS TEST CONDITIONS PEAK REVERSE OR FORWARD BLOCKING Tro mA Tc = 40C to +100C CURRENT? or 2N1842 Irom | 45.0 Vrom = Vrom = 25V Peak 2N1843 | 38.0 = 50V 2N1844 5.0 = 100V 2N1845 | 13.0 = 150V 2N1846 | 12.0 = 200V 2N1847 | 11.0 = 250V 2N1848 | 10.0 = 800V 2N1849 8.0 = 400V 2N1850 6.0 = 500V FULL CYCLE AVG. Taxa REVERSE OR FORWARD or mA To = +35C, I, = 10A BLOCKING CURRENTt Texcav) 180 Conduction Angle 2N1842 - | 22.5* Vaxm = Vrxm = 25V Peak 2N1843 | 19.0* = 50V 2N1844 | 12.5* = 100V 2N1845 6.5* = 150V 2N1846 6.0* = 200V 2N1847 5.5* = 250V 2N1848 5.0* = 300V 2N1849 4.0* = 400V 2N1850 3.0* = 500V GATE TRIGGER CURRENT ler 80 mAde | Tc = +25C, Vex = 12Vdc, Ru = 50 ohms } 150* | mAde | Tc = 40C, Vrx = 12Vde, Ri = 50 ohms GATE TRIGGER VOLTAGE Vor 3.5* Vde Tc = 40C to + 100C, Vex = 12Vde, Ri = 50 ohms 0.30* | Vde Tc = +100C, Vrxu = Rated Vrom, Ru = 1000 ohms PEAK ON-VOLTAGE Veu 2.9 Vv Tc = +25C, Irx = 50A Peak, 1 millisecond wide pulse EFFECTIVE THERMAL 63-0 | 2.5 | C/watt RESISTANCE (DC) +Values apply for zero or negative gate voltage only. Vrouw and Vrom ratings apply equals 11C/watt. *Indicates data included on JEDEC type number registration. Maximum ease to ambient thermal resistance for which maximum NOTES: 1. Complete threads to extend to within 2% threads of seating plane. Diarneter of unthreaded portion .249 (6.32MM) Maxi- murn, .220 (5.59MM) Minimum, 2. Angular orientation of these terminals is undefined. 3. %-28 UNF-2A. Maximum pitch diarneter of plated threads shall be basic pitch diameter .2268 (5.76MM)}, minimum pitch diam- eter .2225 (5.66MM), reference: screw thread standards for Fed- eral Service 1957, Handbook H28, 1957, P1. 4, A chamfer (or undercut) on one or both ends of hexagonal por- tions is optional, . Case is anode connection. . Large terminal is cathode con- nection. 7. Small terminal is gate connec- tion. . Insulating kit available upon re- quest. A. %-28 steel nut, Ni. plated, .178 min. thk. B. Ext. tooth lockwasher, steel , Ni. plated, .023 min. thk. nn ao OUTLINE DRAWING (COMPLIES WITH JEDEC TO-48) $t, 4 $b, SEE NOTES 3,485 hy |, meas NOTES =) RT a fF, N ~+ A be- J} SEATING _ PLANE Mw SEE Ares 329 INCHES | MILLIMETERS SYMBOL] MIN, MAX.} MIN, MAX, | NOTES A 330 | .505 | 8.38 | 12.83 db W115 .140 2.92 3.56 2 by .210 | .300 | 5.33] 7.62 2 @ 544 13.82 E 544 | .562 | 13.82 | 14.27 F 113 | .200 | 2.87] 5.08 { 4 F, .060 1.52 J T1193 30.30 5 875 22.23 i "120 3.05 om 1 N 422 | .453 | 10.72 | 11.51 ot 1060 | .075 | 1.52 | 1.91 ot 125 | .165 | 3.18] 4.19 Ww 3[_2n1842-50 | MAXIMUM ALLOWABLE CASE TEMPERATURE~C INSTANTANEOUS FORWARD CURRENT AMPERES 1. MAXIMUM FORWARD CHARACTERISTICSON-STATE 80 40 20 JUNCTION TEMPERATURE # 25C INCREASES TO FORWARD BREAKOVER VOLTAGE 3 INSTANTANEOUS ON~ VOLTAGE~ VOLTS AVERAGE FORWARD CURRENT- AMPERES 3. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR SINUSOIDAL CURRENT WAVEFORM joo T T T T T T T NOTES (1) RESISTIVE OR INDUCTIVE LOAD,50 TO400Hz. | (2)RATINGS DERIVED FOR 0.5 WATT AVERAGE GATE YY wa OWER DISSIPATION P13) WAXIMUM THERMAL RESISTANCE (CASE TO- N AMBIENT) # 11C PER WATT. NX Nw (4) CURVES APPLY FOR ANODE CURRENT | XY YARNS ATE OF RISE=10 AMPERES PER \ \ ROSECOND MAX. NX \ \ N\ Ss | CONDUCTION KN 1 N. 6 07 TN NX ~ j = SY = 90 | 120 aoe MN, / i / \ be oe Z CONDUCTION ANGLE Lod 2 4 6 8 10 2 14 16 MAXIMUM AVERAGE FORWARD POWER DISSIPATION -WATTS 330 AVERAGE FORWARD CURRENT AMPERES 1a? . saree SECONDS MAX CONDUC TION 2 4 NOTES: ()} FREQUENCY = 50 TO 400Hz JUNCTION TEMPERATURE =100C 90 6 8 10 l2 14 6 AVERAGE FORWARD CURRENT - AMPERES 2. FORWARD POWER DISSIPATION FOR SINUSOIDAL CURRENT WAVEFORM T T T | | WoTes:(. RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz FREE NVECTION COOL! 4+ FIN SIZE (2) cuRveS SHOWN ARE TOR 180 CONDUCTION ANGLE 7L exe" FOR OTHER CONDUCTION ANGLES, MULTIPLY CURRENT VALUE BY FOLLOWING FACTORS: 120-9 91 TO + h, 200.78 +4 gat 30-0.58 SxS y DC - 1.40 6 N USE CURVES FOR DC If. 36.64 CIRCUITS BY CHOOSING | PROPER CONDUCTION ANGLE FACTOR. I atxa" (3) CHART 3 CURVES ARE LIMITING. +~W+4 | (4) ALL FINS 1/16" THICK COPPER WITH EMISSIVITY= 90% 5 STUD MOUNTED DIRECTLY TO COPPER FIN, MINIMUM = + N\ FIN SPACING = 344, [3*x3" NX XY 4 N IN NX NJ \ 3 NA Nh . N \ ' N % 20 40 60 60 100 120 140 160 AMBIENT TEMPERATURE C 4. SUGGESTED MAXIMUM CURRENT VS. AMBIENT TEMPERATURE FOR VARIOUS FIN SIZES2N 1842-50 JUNCTION TEMPERATURE ~ 40C TO + 100C MIN. GATE CURRENT REQUIRED TO TRIGGER ALL UNITS AT: 2 88 a> 6 wt w ze 25 ES o uw & 3 @ 140 & > JUNCTION TEMPERATURE e \ W129 IMMEDIATELY PRIOR TO 3 ws SURGE - 40C TO +100C qt ( . = 1 !00 Ww li Q wz z GATE CURRENT-MILLIAMPERES zw 60 3 oa = wu 2 60 we LOCUS OF POSSIBLE ia? zt = q 3 x=E 40 cee) x =z 24 ae 8 MAX ALLOWABLE GATE ld 3 20 z2 POWER DISSIPATION?5.0 oo 5 WATTS. 0 z \ 2 4 6 86 10 20 40 60 n z 4 8 12 6 2.0 CYCLES AT 60 Hz INSTANTANEOUS GATE CURRENT- AMPERES 6. MAXIMUM ALLOWABLE NON-RECURRENT PEAK SURGE 5. GATE TRIGGERING CHARACTERISTICS FORWARD CURRENT AT RATED LOAD CONDITIONS 3.0 bE 25 L <t T = | a Le uJ ie a. A 5 ud 2.0) 2 bs Y z <x Q ur a. = 1.5 L NOTES: 2 (1) CURVE DEFINES TEMP RISE OF JUNCTION ABOVE = CASE TEMPERATURE FOR SINGLE LOAD PULSE = OF DURATION t PEAK. ALLOWABLE DISSIPATION IN SCR, FOR TIME t, STARTING FROM CASE - | TEMPERATURE EQUALS 100C (MAX T)) MINUS j CASE TEMPERATURE DIVIDED BY THE TRANSIENT 1.0 V THERMAL IMPEDANCE: -T yy, PpEAK= woo" * =TC Va (2) FOR OPTIMUM RATINGS AND FURTHER (| a INFORMATION, SEE PUBLICATION 200.9 A ENTITLED POWER SEMICONDUCTOR RATINGS 0.5 LF UNDER TRANSIENT AND INTERMITTENT LOADS. [} Leer] Q .OOl = .002 005 Ol 02 0S O. 0.2 0.5 1.0 2.0 5.0 10 20 50 100 TIME = (t)- SECONDS 7. MAXIMUM TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE 331