AFT09MP055NR1 AFT09MP055GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Narrowband Performance
(In Freescale Test Circuit: 12.5 Vdc, IDQ(A+B) = 550 mA, TA=25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
870 17.5 69.0 57
800 MHz Broadband Performance
(In Freescale Reference Circuit: 12.5 Vdc, IDQ(A+B) = 800 mA, Pin =1.5W,T
A=25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
764 16.1 56.0 61
816 15.8 58.0 57
870 15.7 61.0 56
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type VSWR
Pin
(W)
Test
Voltage Result
870 (1) CW >65:1 at all
Phase Angles
3
(3 dB Overdrive)
17 No Device
Degradation
1. Measured in 764--870 MHz broadband test circuit.
Features
•Characterized for Operation from 764 to 941 MHz
•Integrated Input Matching Improves Broadband Performance
•Integrated ESD Protection
•Broadband — Full Power Across the Band (764--870 MHz)
•225°C Capable Plastic Package
•Exceptional Thermal Performance
•Extreme Ruggedness
•High Linearity for: TETRA, SSB
•Cost--effective Over--molded Plastic Packaging
•In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
Typical Applications
•Output Stage 800 MHz Band Mobile Radio
•Output Stage 700 MHz Band Mobile Radio
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Document Number: AFT09MP055N
Rev. 0, 7/2013
Freescale Semiconductor
Technical Data
764--941 MHz, 55 W, 12.5 V
BROADBAND
RF POWER LDMOS TRANSISTORS
AFT09MP055NR1
AFT09MP055GNR1
TO--270WB--4
AFT09MP055NR1
TO--270WB--4 GULL
AFT09MP055GNR1
Figure 1. Pin Connections
Note: Exposed backside of the package is
the source terminal for the transistor.
(Top View)
Drain A
Drain B
Gate A
Gate B
©Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +40 Vdc
Gate--Source Voltage VGS --6.0, +12 Vdc
Operating Voltage VDD 19, +0 Vdc
Storage Temperature Range Tstg --65 to +150 °C
Case Operating Temperature Range TC--40 to +150 °C
Operating Junction Temperature Range (1,2) TJ--40 to +225 °C
Total Device Dissipation @ TC=25°C
Derate above 25°C
PD625
3.13
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 78°C, 55 W CW, 12.5 Vdc, IDQ(A+B) = 550 mA, 870 MHz
RθJC 0.32 °C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) A, passes 150 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 °C
Table 5. Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =40Vdc,V
GS =0Vdc)
IDSS ——3μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 12.5 Vdc, VGS =0Vdc)
IDSS ——2μAdc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS ——1μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 270 μAdc)
VGS(th) 1.6 2.1 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.85Adc)
VDS(on) —0.14 —Vdc
Forward Transconductance (4)
(VGS =10Vdc,I
D=7.5Adc)
gfs — 7 — S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
AFT09MP055NR1 AFT09MP055GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc ±30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.9 —pF
Output Capacitance
(VDS = 12.5 Vdc ±30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —61 —pF
Input Capacitance
(VDS = 12.5 Vdc, VGS =0Vdc±30 mV(rms)ac @ 1 MHz)
Ciss (2) —690 —pF
Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 550 mA, Pin =1W,f=870MHz
Common--Source Amplifier Output Power Pout —57 — W
Drain Efficiency ηD—69.0 — %
1. Each side of device measured separately.
2. Value includes input matching network.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
TYPICAL CHARACTERISTICS
6
250
109
90
108
107
105
110 130 150 170 190
MTTF (HOURS)
210 230
106
20
1
1000
0
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
100
15
Figure 3. Drain Current versus Drain--Source Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. MTTF versus Junction Temperature -- CW
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
VDD = 12.5 Vdc
0
2
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
5
VGS =3.75Vdc
4
468 20
IDS, DRAIN CURRENT (AMPS)
3.5 Vdc
TA=25°C
0
9
10
10
510
Coss
Crss
Measured with ±30 mV (rms ) ac
@1MHz,V
GS =0Vdc
10 1412 16 18
3.25 Vdc
3Vdc
2.5 Vdc
7.71 Amps
ID=5.13Amps
6.41 Amps
105
104
Ciss
8
7
3
2
1
Note: Each side of device measured separately.
Ciss value includes input matching network.
Note: Measured with both sides of the transistor
tied together.
AFT09MP055NR1 AFT09MP055GNR1
5
RF Device Data
Freescale Semiconductor, Inc.
870 MHz NARROWBAND PRODUCTION TEST FIXTURE
Figure 5. AFT09MP055NR1 Narrowband Test Circuit Component Layout — 870 MHz
C1
CUT OUT AREA
C5 C7
B1 C9
L1
R1
C16
C14
R3
C15
C17
R2
L2
C10
B2
C2
C6 C8
C13
C12
B4
C4
L4
C19
C21
C23
R4
C22
C20
C18
L3
B3
C3
C11
C24
AFT09MP055N
Rev. 3
Table 6. AFT09MP055NR1 Narrowband Test Circuit Component Designations and Values — 870 MHz
Part Description Part Number Manufacturer
B1, B2 RF Beads, Short 2743019447 Fair-Rite
B3, B4 RF Beads, Long 2743021447 Fair-Rite
C1, C2, C3, C4 10 μF Chip Capacitors GRM55DR61H106KA88L Murata
C5, C6 0.1 μF Chip Capacitors GRM32MR71H104JA01L Murata
C7, C8 1μF Chip Capacitors GRM31MR71H105KA88L Murata
C9, C10 68 pF Chip Capacitors ATC100B680JT500XT ATC
C11, C12, C22, C23 56 pF Chip Capacitors ATC100B560CT500XT ATC
C13 7.5 pF Chip Capacitor GQM2195C2E7R5BB15 Murata
C14, C15 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C16, C17 12 pF Chip Capacitors ATC600F120JT250XT ATC
C18, C19, C20, C21 9.1 pF Chip Capacitors GQM2195C2E9R1BB15 Murata
C24 3 pF Chip Capacitor ATC600F3R0BT250XT ATC
L1, L2, L3, L4 2.5 nH Inductors A01TKLC Coilcraft
R1, R2 10 ΩChip Resistors CRCW120610R0JNEA Vishay
R3 2.0 ΩChip Resistor ERJ-14YJ2R0U Panasonic
R4 5.9 ΩChip Resistor CRCW12065R90FKEA Vishay
PCB 0.030″,εr=4.8 RF35A2 Taconic
6
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
Figure 6. AFT09MP055NR1 Narrowband Test Circuit Schematic — 870 MHz
Table 7. AFT09MP055NR1 Narrowband Test Circuit Microstrips — 870 MHz
DescriptionMicrostripDescriptionMicrostrip DescriptionMicrostrip
RF
INPUT Z1 Z2
Z3
C15
Z4
Z5
C14
Z6
Z7
Z8
Z9
Z10
VBIAS
C1 C5 C7
R1
Z11
DUT
L3
Z15 Z17 Z19
C11
Z21
C22
Z25 Z26
C24
RF
OUTPUT
VSUPPLY
B1
L1
C16
C17
R3
C13
C9
R2
L2
C2 C6 C8
B2
C10
VBIAS
Z12
Z13
C18
C3
B3
R4
C20
Z23
Z16 Z18
Z14
L4 C19
B4
C12 C4
VSUPPLY
Z20 Z22
C23
Z24
C21
Z19, Z20 0.007″×0.400″Microstrip
Z21, Z22 0.025″×0.400″Microstrip
Z23*, Z24* 0.885″×0.120″Microstrip
Z25 0.175″×0.065″Microstrip
Z26 0.901″×0.065″Microstrip
Z1 0.721″×0.065″Microstrip
Z2 0.595″×0.065″Microstrip
Z3*, Z4* 0.670″×0.120″Microstrip
Z5, Z6 0.025″×0.400″Microstrip
Z7, Z8 0.025″×0.400″Microstrip
Z9, Z10 0.295″×0.400″Microstrip
Z11, Z12 0.075″×0.400″Microstrip
Z13, Z14 0.075″×0.400″Microstrip
Z15, Z16 0.100″×0.400″Microstrip
Z17, Z18 0.213″×0.400″Microstrip
* Line length includes microstrip bends
AFT09MP055NR1 AFT09MP055GNR1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 870 MHz
60
70
80
0
01234
40
20
60
Pout, OUTPUT POWER (WATTS)
80
90
0.5 1.5 2.5 3.5 4.5
100
VDD = 13.6 Vdc, Pin =1W
f = 870 MHz
VDD = 12.5 Vdc
Pin =0.5W
VDD = 12.5 Vdc, Pin =1W
VDD = 13.6 Vdc, Pin =0.5W
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source Voltage
at a Constant Input Power
Figure 8. Power Gain, Drain Efficiency and Output
Power versus Input Power
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
12
16
0.1
30
50
40
0
20
19
20
1
ηD, DRAIN EFFICIENCY (%)
ηD
Pout VDD = 12.5 Vdc, IDQ(A+B) = 550 mA
f = 870 MHz
15
14
13 10
Pout, OUTPUT POWER (WATTS)
80
70
50
30
10
18
17
3
Gps
VDD = 12.5 Vdc, IDQ(A+B) = 550 mA, Pout =57WAvg.
f
MHz
Zsource
Ω
Zload
Ω
870 1.40 -- j1.00 0.61 -- j0.14
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50 Ω
50 Ω
8
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
764--870 MHz BROADBAND REFERENCE CIRCUIT
Table 8. 764--870 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 12.5 Vdc, IDQ(A+B) = 800 mA, Pout =55W,T
A=25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
764 16.6 54.2 55
816 16.0 59.2 55
870 15.8 61.1 55
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
764 CW >65:1 at all
Phase Angles
3
(3 dB Overdrive)
15 No Device
Degradation
AFT09MP055NR1 AFT09MP055GNR1
9
RF Device Data
Freescale Semiconductor, Inc.
764--870 MHz BROADBAND REFERENCE CIRCUIT
C32 AFT09MP055N
Rev. 1
C28 C24
B1
L1
R3
C7* C5
R1
C9
C10
C1*
C11* C12*
C8*
R4
C6
L2
B2
C33C29 C25
B3
R5
C4
L3
C15 C13
C26 C30
C34
C36
C17
C20
C22
R2
C23
C21
C19
C2*
C18
L4
C14C16
C3
B4
R6
C27 C31
C35 C37
Figure 10. AFT09MP055NR1 Broadband Reference Circuit Component Layout — 764--870 MHz
*C1, C2, C7, C8, C11 and C12 are mounted vertically.
Q1
Table 10. AFT09MP055NR1 Broadband Reference Circuit Component Designations and Values — 764--870 MHz
Part Description Part Number Manufacturer
B1, B2, B3, B4 RF Beads, Short 2743019447 Fair-Rite
C1, C2, C3, C4 56 pF Chip Capacitors ATC100B560GT1500XT ATC
C5, C6, C7, C8 10 pF Chip Capacitors ATC600F100GT250XT ATC
C9, C10 8.2 pF Chip Capacitors ATC600F8R2JT250XT ATC
C11 4.7 pF Chip Capacitor ATC600F4R7GT250XT ATC
C12 5.6 pF Chip Capacitor ATC600F5R6GT250XT ATC
C13, C14 15 pF Chip Capacitors ATC600F150JT250XT ATC
C15, C16, C17, C18 3.9 pF Chip Capacitors ATC600F3R9GT250XT ATC
C19 6.8 pF Chip Capacitor ATC600F6R8GT250XT ATC
C20, C21 2.2 pF Chip Capacitors ATC600F2R2GT250XT ATC
C22, C23 1.5 pF Chip Capacitors ATC600F1R5GT250XT ATC
C24, C25, C26, C27 0.1 μF Chip Capacitors GRM32MR71H104JA01L Murata
C28, C29, C30, C31 1 μF Chip Capacitors GRM31MR71H105KA88L Murata
C32, C33, C34, C35 10 μF Chip Capacitors GRM55DR61H106KA88L Murata
C36, C37 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
L1, L2, L3, L4 12.5 nH Chip Inductors A04TKLC Coilcraft
Q1 RF Power LDMOS Transistor AFT09MP055NR1 Freescale
R1, R2, R3, R4, R5, R6 10 Ω, Chip Resistors CRCW201010R0FKEF Vishay
PCB 0.030″,εr=4.8 S1000-2 Shengyi
10
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
Figure 11. AFT09MP055NR1 Broadband Reference Circuit Schematic — 764--870 MHz
RF
INPUT Z1 Z2
Z5
VBIAS
C24
R3
DUT
Z13
C4
Z23 Z24
C19
RF
OUTPUT
VSUPPLY
L1
C32
Z11
Z12
C1 C11
Z3
C12
Z4
Z6
C28
C7
C9
C10
C8
L2
R4
B1
B2
VBIAS
C25 C33C29
Z7
Z8
Z9
Z10
R1
C5
C6
Z14
C15
C16
C13
C14
Z15
Z16
R2
Z17
Z18
C20
C21
C22
C23
L3
R5 B3 C26 C30 C34 C36
+
Z19
Z20
L4
C3
VSUPPLY
R6 B4
C27 C31 C35 C37
+
C17
C18
Z21
Z22
C2
Z25
* Line length includes microstrip bends
Table 11. AFT09MP055NR1 Broadband Reference Circuit Microstrips — 764--870 MHz
DescriptionMicrostripDescriptionMicrostrip
Z1 0.157″×0.051″Microstrip
Z2 0.043″×0.051″Microstrip
Z3 0.052″×0.051″Microstrip
Z4 0.185″×0.051″Microstrip
Z5*, Z6* 0.408″×0.071″Microstrip
Z7, Z8 0.035″×0.393″Microstrip
Z9, Z10 0.319″×0.393″Microstrip
Z11, Z12 0.097″×0.393″Microstrip
Z13, Z14 0.052″×0.393″Microstrip
Z15, Z16 0.119″×0.393″Microstrip
Z17, Z18 0.083″×0.393″Microstrip
DescriptionMicrostrip
Z19, Z20 0.190″×0.071″Microstrip
Z21*, Z22* 0.500″×0.071″Microstrip
Z23 0.240″×0.051″Microstrip
Z24 0.280″×0.051″Microstrip
Z25 0.157″×0.051″Microstrip
AFT09MP055NR1 AFT09MP055GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 764--870 MHz BROADBAND
REFERENCE CIRCUIT
15.5
760
Gps
f, FREQUENCY (MHz)
Figure 12. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 12.5 Vdc
14
18
50
68
64
60
56
65
60
55
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
17.5
16.5
14.5
800 840 880
52
Pout,OUTPUT
POWER (WATTS)
VDD = 12.5 Vdc, Pin =1.5W(Avg.)
IDQ(A+B) = 800 mA
Pout
17
16
15
15.5
760
Gps
f, FREQUENCY (MHz)
Figure 13. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 13.6 Vdc
14
18
50
70
65
60
55
65
60
55
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
17.5
16.5
14.5
800 840 880
50
Pout,OUTPUT
POWER (WATTS)
VDD = 13.6 Vdc, Pin =1W(Avg.)
IDQ(A+B) = 800 mA
Pout
17
16
15
12
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
TYPICAL CHARACTERISTICS — 764--870 MHz BROADBAND
REFERENCE CIRCUIT
50
20
30
40
50
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 14. Output Power versus Gate--Source Voltage
80
1234
Pout, OUTPUT POWER (WATTS)
f = 816 MHz
0
0
Detail A
0.5 1.5 22.5
40
30
f = 816 MHz
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
60
70
VDD = 12.5 Vdc, Pin =1.5W
20
10
VDD = 13.6 Vdc, Pin =1.5W
Detail A
10
VDD = 13.6 Vdc, Pin =1W
1
VDD = 12.5 Vdc
Pin =1W
VDD = 13.6 Vdc, Pin =1.5W
VDD = 13.6 Vdc, Pin =1W
VDD = 12.5 Vdc, Pin =1.5W
VDD = 12.5 Vdc
Pin =1W
100
120
Figure 15. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
13
15
14
3
Gps
40
0
20
18
17
16
19
80
1
Pout
VDD = 12.5 Vdc, IDQ(A+B) = 800 mA
764 MHz
ηD870 MHz
ηD, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (WATTS)
60
0.1
816 MHz
870 MHz
816 MHz
764 MHz
816 MHz 764 MHz
870 MHz
AFT09MP055NR1 AFT09MP055GNR1
13
RF Device Data
Freescale Semiconductor, Inc.
764--870 MHz BROADBAND REFERENCE CIRCUIT
Zo=2Ω
Zload
f = 760 MHz
f = 870 MHz
f = 870 MHz
f = 760 MHz
Zsource
VDD = 12.5 Vdc, IDQ(A+B) = 800 mA, Pout =55WAvg.
f
MHz
Zsource
Ω
Zload
Ω
760 1.24 + j0.09 1.00 -- j0.81
770 1.30 + j0.15 1.00 -- j0.75
780 1.35 + j0.21 1.00 - j0.72
790 1.43 + j0.34 1.01 - j0.61
800 1.54 + j0.34 1.03 - j0.58
810 1.66 + j0.18 0.99 - j0.65
820 1.63 + j0.06 0.90 - j0.63
830 1.55 - j0.07 0.78 - j0.60
840 1.42 - j0.12 0.71 - j0.48
850 1.21 - j0.13 0.56 - j0.37
860 1.15 - j0.12 0.52 - j0.28
870 1.01 - j0.10 0.43 - j0.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 16. Broadband Series Equivalent Source and Load Impedance — 764--870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50 Ω
50 Ω
14
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
PACKAGE DIMENSIONS
AFT09MP055NR1 AFT09MP055GNR1
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
AFT09MP055NR1 AFT09MP055GNR1
17
RF Device Data
Freescale Semiconductor, Inc.
18
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
AFT09MP055NR1 AFT09MP055GNR1
19
RF Device Data
Freescale Semiconductor, Inc.
20
RF Device Data
Freescale Semiconductor, Inc.
AFT09MP055NR1 AFT09MP055GNR1
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
•.s2p File
Development Tools
•Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0July 2013 •Initial Release of Data Sheet
AFT09MP055NR1 AFT09MP055GNR1
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RF Device Data
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Document Number: AFT09MP055N
Rev. 0, 7/2013
