MJE13009
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■STMicr o electronics PREF E RRED
SALESTYPE
■HIGH VOLTAGE CAPABILITY
■MINI MUM LOT- TO - LOT SPR E AD F O R
RELIABLE OPERATION
■LOW BASE-DRIVE REQUIREMENTS
■VERY HIGH SWITCHING SPEED
■FULLY CHAR ACTE RIZED AT 125oC
APPLICATIONS
■ELECT RO NIC TRAN SFO RM ER F OR
HA LO GEN LAM P S
■SWITCH MODE PO W ER SU PPLI ES
DESCRIPTION
The MJE13009 is a high voltage Multiepitaxial
Mesa NPN transistor mounted in Jedec TO-220
plastic package. It uses a Hollow Emitter
struct ure to enhance switc hing speeds.
®
INT E R NAL SCH E M ATI C DIAG RA M
November 2002
123
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VCEV Collector-Emitter Voltage (VBE = -1.5 V) 700 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 12 A
ICM Collector Pe ak Cu rrent (tp ≤ 10 ms) 25 A
IBBase Current 6 A
IBM Base Peak Current (tp ≤ 10 ms) 12 A
IEEmitter Current 18 A
IEM Emitter Pea k Current 36 A
Ptot Total Power Dissipation at T c ≤ 25 oC110 W
Tstg Storage Temp erature -65 to 150 oC
TjMax. Operating Junctio n Te mperature 150 oC
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.14 oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VEB = -1.5 V) VCE = 70 0 V
VCE = 70 0 V Tcase = 100oC1
5mA
mA
IEBO Emitter Cut-off
Current (IC = 0) VEB = 9 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA 400 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 5 A IB = 1 A
IC = 8 A IB = 1.6 A
IC = 12 A IB = 3 A
IC = 8 A IB = 1.6 A
Tcase = 100oC
1
1.5
3
2
V
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 5 A IB = 1 A
IC = 8 A IB = 1.6 A
IC = 8 A IB = 1.6 A
Tcase = 100oC
1.2
1.6
1.5
V
V
V
hFE∗DC Current Ga in IC = 5 A VCE = 5 V
IC = 8 A VCE = 5 V 8
640
30
fTTransition Frequency IC = 500 mA VCE = 10 V 4 MHz
COB Output Capacitance
(IE = 0) VCB = 10 V f = 0.1 MHz 180 pF
ton
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
VCC = 125 V IC = 8A
IB1 = -IB2 = 1.6 A tp = 2 5 µs
Duty Cycle ≤ 1 (see figure 2)
1.1
3
0.7
µs
µs
µs
∗ P ulsed: P ulse duration = 300µs, duty cyc le ≤ 2 %
Safe O perat ing Areas Derating Curve
MJE13009
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DC Current Gain
Collector Emitter Saturation Voltage
Induct ive Lo ad Fall Ti m e
DC Current Gain
Base Em itt er Sat uration Volt age
Inductive Load Storage Time
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Reverse Bias e d SOA
Figure 1: Inductive Load Switch ing Test Circuit
Figure 2: Resistiv e Load Switching Test Ciurcuit
1) Fast electronic switch
2) Non-inductive Resistor
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
P011CI
TO-220 MECHANICAL DATA
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