BSP315P - Infineon Technologies

2007-02-08

Rev.1.4 Page 1

BSP 315 P

SIPMOS Small-Signal-Transistor

Features

• P-Channel

• Enhancement mode

• Avalanche rated

• Logic Level

• d

v

/d

t

rated

Product Summary

Drain source voltage V

V

DS -60

Drain-Source on-state resistance

R

DS(on) 0.8 Ω

Continuous drain current A

I

D-1.17

VPS05163

123

4

Maximum Ratings,at

T

j

= 25 °C, unless otherwise specified

Parameter Symbol UnitValue

-1.17

-0.94

AContinuous drain current

T

A

= 25 °C

T

A

= 70 °C

I

D

Pulsed drain current

T

A

= 25 °C

I

D puls

-4.68

Avalanche energy, single pulse

I

D

= -1.17 A ,

V

DD

= -25 V,

R

GS

= 25 Ω24 mJ

E

AS

Avalanche energy, periodic limited by

T

jmax

E

AR

0.18

d

v

/d

t

6Reverse diode d

v

/d

t

I

S

= -1.17 A,

V

DS

= -48 V, d

i

/d

t

= 200 A/µs,

T

jmax

= 150 °C

kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

T

A

= 25 °C

P

tot

1.8 W

Operating and storage temperature

T

j ,

T

stg

-55...+150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Type Package Tape and Reel Information

BSP315 P PG-SOT-223 L6327: 1000 pcs/reel

Pin 1 Pin2/4 PIN 3

GDS

Marking

BSP315 P

http://store.iiic.cc/

BSP 315 P

Thermal Characteristics

Parameter Symbol UnitValues

min. max.typ.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4) 25 K/W-

R

thJS -

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

R

thJA

-

115

70

K/W

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = -250 µA

V

(BR)DSS -60 - V-

Gate threshold voltage,

V

GS =

V

DS

I

D = -160 µA -1 -1.5 -2

V

GS(th)

Zero gate voltage drain current

V

DS = -60 V,

V

GS = 0 V,

T

j = 25 °C

V

DS = -60 V,

V

GS = 0 V,

T

j = 125 °C

µA

-1

-100

I

DSS

-0.1

-10

-

I

GSS - -10 -100Gate-source leakage current

V

GS = -20 V,

V

DS = 0 V nA

Drain-Source on-state resistance

V

GS = -4.5 V,

I

D = -0.89 A

R

DS(on) - 0.8 1.4 Ω

Drain-Source on-state resistance

V

GS = -10 V,

I

D = -1.17 A

R

DS(on) - 0.5 0.8 Ω

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2007-02-08

Rev.1.4 Page 2

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BSP 315 P

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS≤2*

I

D*

R

DS(on)max ,

I

D = -0.89 A 0.7

g

fs S-1.4

Input capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

C

iss 130 160 pF-

C

oss - 5040Output capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

Reverse transfer capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz 2117

C

rss -

Turn-on delay time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.89 A,

R

G = 18 Ω

- 36 ns24

t

d(on)

Rise time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.89 A,

R

G = 18 Ω

t

r- 149

32 48

t

d(off)

Turn-off delay time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.89 A,

R

G = 18 Ω

-

Fall time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.89 A,

R

G = 18 Ω

t

f- 19 28

2007-02-08

Rev.1.4 Page 3

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BSP 315 P

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

UnitValuesSymbolParameter

min. typ. max.

Dynamic Characteristics

Gate to source charge

V

DD = -48 V,

I

D = -1.17 A -

Q

gs nC1.10.7

Gate to drain charge

V

DD = -48 V,

I

D = -1.17 A

Q

gd 1.8 2.6-

7.8-

Q

g

Gate charge total

V

DD = -48 V,

I

D = -1.17 A,

V

GS = 0 to -10 V 5.2

Gate plateau voltage

V

DD = -48 V,

I

D = -1.17 A

V

(plateau) - -3.14 - V

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

A = 25 °C

I

S- - -1.17 A

Inverse diode direct current,pulsed

T

A = 25 °C

I

SM - - -4.68

Inverse diode forward voltage

V

GS = 0 V,

I

F = -1.17 A

V

SD - -0.97 -1.3 V

Reverse recovery time

V

R = -30 V,

I

F=

I

S , d

i

F/d

t

= 100 A/µs

t

rr - 30.5 46 ns

Reverse recovery charge

V

R = -30 V,

I

F=

l

S , d

i

F/d

t

= 100 A/µs

Q

rr - 36 54 µC

2007-02-08

Rev.1.4 Page 4

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BSP 315 P

Drain current

I

D =

f

(

T

A)

parameter :

V

GS≥ −10V

0 20 40 60 80 100 120 °C 160

T

A

0.0

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1.0

-1.1

A

-1.3

BSP

315

P

I

D

Power Dissipation

P

tot =

f

(

T

A)

0 20 40 60 80 100 120 °C 160

T

A

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

W

1.9

BSP

315

P

tot

Transient thermal impedance

Z

thJC =

f

(

t

p)

parameter :

D

=

t

p/

T

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4

s

t

p

-2

10

-1

10

0

10

1

10

2

10

K/W

BSP

315

P

Z

thJC

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

Safe operating area

I

D =

f

(

V

DS )

parameter :

D

= 0 ,

T

A = 25 °C

-10 -1 -10 0 -10 1 -10 2

V

DS

-2

-10

-1

-10

0

-10

1

-10

A

BSP

315

P

I

D

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

t

p = 280.0µs

2007-02-08

Rev.1.4 Page 5

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BSP 315 P

Typ. drain-source-on-resistance

R

DS(on) =

f

(

I

D)

parameter:

V

GS

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 A-2.6

I

D

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

Ω

2.6

BSP

315

P

R

DS(on)

a

V

GS [V] =

a

-2.5

b

-3.0

c

-3.5

d

-4.0

e

-4.5

f

-5.0

g

-5.5

h

-6.0

i

-6.5

j

-7.0

kk

-8.0

ll

-10.0

Typ. output characteristics

I

D =

f

(

V

DS)

parameter:

t

p = 80 µs

0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0

V

DS

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

-1.4

-1.6

-1.8

-2.0

-2.2

-2.4

A

-2.8

BSP

315

P

I

D

V

GS [V]

a

a -2.5

b

b -3.0

c

c -3.5

d

d -4.0

e

e -4.5

f

f -5.0

g

g -5.5

h

h -6.0

i

i -6.5

j

j -7.0

k

k -8.0

l

P

tot = 2W

l -10.0

Typ. transfer characteristics

I

D=

f

(

V

GS )

V

DS≥ 2 x

I

D x

R

DS(on)max

parameter:

t

p = 80 µs

0.0 -1.0 -2.0 -3.0 -4.0 V-6.0

V

GS

0.0

-0.5

-1.0

-1.5

-2.0

A

-3.0

I

D

Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter:

g

fs

0.0 0.5 1.0 1.5 2.0 A3.0

I

D

0.0

0.5

1.0

1.5

S

2.5

g

fs

2007-02-08

Rev.1.4 Page 6

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BSP 315 P

Drain-source on-resistance

R

DS(on) =

f

(

T

j)

parameter:

I

D = -1.17 A,

V

GS = -10 V

-60 -20 20 60 100 °C 180

T

j

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Ω

2.1

BSP

315

P

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter:

V

GS =

V

DS,

I

D = -160 µA

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

2%

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

typ

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

98%

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

Typ. capacitances

C = f(VDS)

Parameter:

V

GS=0 V,

f

=1 MHz

0 -5 -10 -15 -20 -25 -30 V-40

V

DS

0

10

1

10

2

10

3

10

pF

C

iss

C

oss

C

rss

Forward characteristics of reverse diode

I

F =

f

(VSD)

parameter:

T

j , tp = 80 µs

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0

V

SD

-2

-10

-1

-10

0

-10

1

-10

A

BSP

315

P

I

F

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

2007-02-08

Rev.1.4 Page 7

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BSP 315 P

Avalanche Energy

E

AS =

f

(

T

j)

parameter:

I

D = -1.17 A ,

V

DD = -25 V

R

GS = 25 Ω

25 45 65 85 105 125 °C 165

T

j

0

5

10

15

mJ

25

E

AS

Typ. gate charge

V

GS =

f

(

Q

Gate)

parameter:

I

D = -1.17 A pulsed

0.0 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0

Q

Gate

0

-2

-4

-6

-8

-10

-12

V

-16

BSP

315

P

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V

(BR)DSS = f

(

T

j

)

-60 -20 20 60 100 °C 180

T

j

-54

-56

-58

-60

-62

-64

-66

-68

V

-72

BSP

315

P

V

(BR)DSS

2007-02-08

Rev.1.4 Page 8

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BSP 315 P

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

2007-02-08

Rev.1.4 Page 9

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